Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

作     者：韩晓艳 侯国付 张晓丹 魏长春 李贵君 张德坤 陈新亮 孙健 张建军 赵颖 耿新华 

作者机构：Institute of PhotoelectronicsThin Film Devices and Technique of Nankai University Key Laboratory of PhotoelectronicsThin Film Devices and Technique of Tianjin Key Laboratory of Optoelectronic Information Science and TechnologyMinistry of Education 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2009年第18卷第8期

页      面：3563-3567页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Basic Research Program of China (Grant Nos 2006CB202602 and 2006CB202603) the Tianjin Assistant Foundation for the National Basic Research Program of China (Grant No 07QTPTJC29500) the Natural Science Foundation of Tianjin (Grant No 07JCYBJC04000) 

主　　题：microcrystalline silicon high rate solar cell total gas flow rate 

摘      要：This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-highfrequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μc-Si：H layers were prepared by using a different total gas flow rate （Ftotal）, behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of - 1.0 nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μc-Si：H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 A/s （1 A=0.1 nm）.