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SmartMat 2023年第2期4卷 120-130页

作者： Yao Ni Lu Yang Jiulong Feng Jiaqi Liu Lin Sun Wentao Xu institute of photoelectronic thin film devices and Technology Nankai UniversityTianjinChina Key Laboratory of Optoelectronic thin film devices and Technology of Tianjin Nankai UniversityTianjinChina Engineering Research Center of thin film photoelectronic Technology Ministry of EducationNankai UniversityTianjinChina Shenzhen Research institute of nankai university Nankai UniversityShenzhenChina

A flexible optoelectronic neural transistor(OENT)that consists of a one‐step spin‐coated tri‐blend film composed of 2,7‐dioctyl[1]benzothieno[3,2‐b][1]benzothiophene(C8‐BTBT),poly(3‐hexylthiophene‐2,5‐diyl)(P3HT),and poly(methyl methacrylate)(PMMA)is *** C8‐BTBT and P3HT phases in the film partially segregate into distinct domains,which combine to provide broadband spectrum sensing,and instant electrical‐processing capabilities dominated by C8‐*** OENT is sensitive to solar radiation from the near‐ultraviolet(NUV)and to visible(Vis)radiation from blue to *** exposed to NUV radiation,the OENT responds sensitively and retains the memory of the exposure for over 10^(3 )*** OENT provides a warning of excessive chronic exposure to harmful *** properties allow high‐pass filtering with different cut‐off frequencies fc that can restrict the reception of blue,green,or *** switchable fc enables sensitive image reconstruction and multitarget *** device combined with a chitosan gel achieves strictly defined short‐range plasticity ofelectronics and multimodal neuromorphic computing.

关键词： flexible optoelectronic neural transistor high‐pass filtering Morse‐code recognition system sensitive image reconstruction and multitarget monitoring spatiotemporally correlated coding and logic function

Influence of total gas flow rate on microcrystalline silicon films prepared by VHF-PECVD

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Chinese Physics B 2006年第5期15卷 1110-1113页

作者：高艳涛张晓丹赵颖孙健朱峰魏长春陈飞 institute of photo-electronic thin film devices and Technology Nankai University Tianjin 300071 China Tianjin Key Laboratory of photo-electronic thin film devices and Technology Tianjin 300071 China

Hydrogenated microcrystalline silicon （μc-Si：H） films are fabricated by very high frequency plasma enhanced chemical vapour deposition （VHF-PECVD） at a silane concentration of 7% and a varying total gas flow rate （H2＋SiH4）. Relations between the total gas flow rate and the electrical and structural properties as well as deposition rate of the films are studied. The results indicate that with the total gas flow rate increasing the photosensitivity and deposition rate increase, but the crystalline volume fraction （Xc） and dark conductivity decrease. And the intensity of （220） peak first increases then decreases with the increase of the total gas flow rate. The cause for the changes in the structure and deposition rate of the films with the total gas flow rate is investigated using optical emission spectroscopy （OES）.

关键词： very high frequency plasma enhanced chemical vapour deposition intrinsic microcrystalline silicon gas flow rate

Research on ZnO/Si heterojunction solar cells

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Journal of Semiconductors 2017年第5期38卷 62-72页

作者： Li Chen Xinliang Chen Yiming Liu Ying Zhao Xiaodan Zhang institute of photo-electronic thin film devices and Technology Nankai University Tianjin 300071 China Tianjin Key laboratory of photo-electronic thin film devices and Technology Nankai University Tianjin 300071 China Key laboratory of Opto-electronic Information Science and Technology for Ministry of Education Nankai University Tianjin 300071 China Mads Clausen institute University of Southern Denmark Alsion 2 DK-6400 Sonderborg Denmark

We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this ***：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic *** investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software *** energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via *** a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar *** influences of growth temperature,thickness and diborane（B2H6） flow rates are also *** achieve an appropriate condition for the fabrication of the solar cells using the MOCVD *** obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.

关键词： textured surface ZnO films p-type c-Si substrates MOCVD technique AFORS-HET software solar cells

Li^(+)doping induced zero-thermal quenching in Cs_(3)Zn_(6-x-y)B_(9)O_(21):xEu^(3+),yLi^(+)(0≤x≤0.10,0.06≤y≤0.16)

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Journal of Rare Earths 2023年第10期41卷 1478-1486,I0001页

作者： Yuxing Bai Liwei Wu Qilin Cheng Li Wu Yongfa Kong Yi Zhang Jingjun Xu Key Laboratory of Weak-Light Nonlinear photonics Ministry of EducationSchool of PhysicsNankai UniversityTianjin300071China College of Science Civil Aviation University of ChinaTianjin300300China institute of photo-electronic thin film devices and Technology Nankai UniversityTianjin300071China

Thermal stability is a crucial index to assess application value of high-power LEDs,which is related to lattice ***,an effective structure-engineering strategy is proposed to achieve excellent *** the 394 nm excitation,Cs_3Zn_(5.94)B_9O_(21):0.06Eu^(3+)possesses two characteristic emissions peaked at 591 and 612 nm with limited thermal *** introducing Li^(+)ions into the lattice,the sample exhibits high color purity and excellent zero-thermal quenching because the defect contents of the phosphor can be effectively modulated via charge-compensation ***,under the stimulus of high temperature,the corresponding trap levels with a suitable depth(E=1.27 eV)will release electrons to recombine with the luminescent centers,compensating for the energy *** study provides a meaningful guide for optimizing and designing novel functional photoluminescent materials.

关键词： photoluminescence Charge compensation Lattice defects Thermal stability Rare earths

A novel silver-doped nickel oxide hole-selective contact for crystalline silicon heterojunction solar cells

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Frontiers of Chemical Science and Engineering 2024年第2期18卷 93-101页

作者： Junfeng Zhao Xudong Yang Zhongqing Zhang Shengpeng Xie Fangfang Liu Anjun Han Zhengxin Liu Yun Sun Wei Liu Key Laboratory of photoelectronic thin film devices and Technology of Tianjin Engineering Research Center of Thin Film Photoelectronic TechnologyInstitute of Photoelectronic Thin Film Devices and Technology of Nankai University(Ministry of Education)Tianjin 300350China Shanghai institute of Microsystem and Information Technology Chinese Academy of SciencesShanghai 201800China

Based on its band alignment,p-type nickel oxide(NiO_(x))is an excellent candidate material for hole transport layers in crystalline silicon heterojunction solar cells,as it has a smallΔEV and largeΔEC with crystalline ***,to overcome the poor hole selectivity of stoichiometric NiO_(x) due to its low carrier concentration and conductivity,silver-doped nickel oxide(NiO_(x):Ag)hole transport layers with high carrier concentrations were prepared by co-sputtering high-purity silver sheets and pure NiO_(x) *** improved electrical conductivity of NiO_(x) was attributed to the holes generated by the Ag^(+)substituents for Ni^(2+),and moreover,the introduction of Ag^(+)also increased the amount of Ni^(3+)present,both of which increased the carrier concentration in NiO_(x).Ag^(+)doping also reduced the c-Si/NiO_(x) contact resistivity and improved the hole-selective contact with NiO_(x).Furthermore,the problems of particle clusters and interfacial defects on the surfaces of NiO_(x):Ag films were solved by UV-ozone oxidation and high-temperature annealing,which facilitated separation and transport of carriers at the c-Si/NiO_(x) *** constructed c-Si/NiO_(x):Ag solar cell exhibited an increase in open-circuit voltage from 490 to 596 mV and achieved a conversion efficiency of 14.4%.

关键词： band alignment nickel oxide hole transport layer silver-doped nickel oxide UV-ozone

Key parameters of two typical intercalation reactions to prepare hybrid inorganic-organic perovskite films

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Chinese Physics B 2018年第1期27卷 109-115页

作者：石标郭升魏长春李宝璋丁毅李跃龙万青赵颖张晓丹 institute of photoelectronic thin film devices and Technology Nankai University Key Laboratory of photoelectronic thin film devices and Technology of Tianjin Key Laboratory of Optical Information Science and Technology of Ministry of Education Collaborative Innovation Center of Chemical Science and Engineering (Tianjin) College of electronic Science and Engineering Nanjing University

A star hybrid inorganic-organic perovskite material selected as an outstanding absorbing layer in solar cells benefits from multiple preparation techniques and excellent photoelectric characteristics. Among numerous synthetic processes, uniform, compact, and multi-stack perovskite thin films can be manufactured using vacuum deposition. During sequential vacuum deposition, the penetration ability of the organic molecules cannot be effectively controlled. In addition, the rela- tionship between the thickness of the inorganic seeding layer and the organic molecule concentration for optimized devices using an evaporation-solution method is unclear. In this work, we prepared high-quality perovskite films by effectively con- trolling the penetration ability and chemical quantity of organic methyl ammonium iodide by monitoring the evaporation pressure and time. Thus, a device efficiency of over 15% was achieved with an all-vacuum prepared perovskite film. For the evaporation-solution method, we reacted different thicknesses of inorganic lead iodine with various concentrations of the organic molecule solution. The inorganic layer thickness and organic molecule concentration showed a linear relationship to achieve an optimum perovskite film, and an empirical formula was obtained. This work noted the key parameters of two intercalation reactions to prepare perovskite films, which paves a way to deliver a device that enables multi-layered structures, such as tandem solar cells.

关键词： perovskite solar cell sequential vacuum deposition evaporation-solution method intercalationreaction

Healing the defects in CsPbI_(3)solar cells by CsPbBr_(3)quantum dots

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Nano Research 2023年第4期16卷 4888-4894页

作者： Yanyan Li Linrui Duan Zhuang Zhang Huanhuan Wang Tianyang Chen Jingshan Luo institute of photoelectronic thin film devices and Technology Solar Energy Research CenterKey Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinMinistry of Education Engineering Research Center of Thin Film Photoelectronic TechnologyRenewable Energy Conversion and Storage CenterNankai UniversityTianjin 300350China

Cesium lead iodide(CsPbI_(3))is a promising photo-absorber for perovskite photovoltaics due to its high thermal stability and relatively small ***,there are many defects in solution processed polycrystalline CsPbI_(3)films especially at the grain boundaries(GBs),which limit the power conversion efficiency(PCE)of CsPbI_(3)solar *** this work,we introduced CsPbBr_(3)quantum dots(QDs)on top of the CsPbI_(3)film to passivate the *** CsPbBr_(3)QDs have a small size and a similar crystal structure as the CsPbI_(3),they are excellent modifiers to fill in the GBs and heal the ***,we find there is an anion exchange reaction between the CsPbBr_(3)QDs and CsPbI_(3)films,which is evidenced by photoluminescence spectra and grazing incidence X-ray diffraction *** QDs treated films show enhanced carrier lifetime and reduced defect ***,the ligands on CsPbBr_(3)QDs increase the hydrophobicity of the *** a result,the QDs treated CsPbI_(3)solar cells prepared at high temperature obtain PCEs exceeding 16%with high stability.

关键词： CsPbI_(3)solar cell CsPbBr_(3)quantum dots defect passivation

Flexible organic artificial synapse with ultrashort-term plasticity for tunable time-frequency signal processing

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Chinese Chemical Letters 2023年第12期34卷 236-240页

作者： Yao Ni Lu Liu Jiulong Feng Lu Yang Wentao Xu institute of photoelectronic thin film devices and Technology Key Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinCollege of Electronic Information and Optical EngineeringEngineering Research Center of Thin Film Photoelectronic Technology of Ministry of EducationSmart Sensing Interdisciplinary Science CenterNankai UniversityTianjin 300350China Shenzhen Research institute of nankai university Shenzhen 518000China

A flexible organic artificial synapse(OAS)for tunable time-frequency signal processing was fabricated using a tri-blend film that had been fabricated using a one-step solution *** combined with a chitosan film,this OAS can achieve an ultrashort-term retention time of only 49 ms for instant electricalcomputing applications;this is the shortest retention time yet achieved by a two-terminal artificial *** array of these flexible OASs can withstand a high bending strain of 5%for 10^(4) cycles;this deformation endurance is a new *** OAS was also sensitive to the number and frequency of electrical inputs;a tunable cut-off frequency enables dynamic filtering for use in image detail *** work provides a new resource for development of future neuromorphic computing devices。

关键词： Flexible organic artificial synapse Tri-blend film Time-frequency signal processing Ultrashort-term plasticity Dynamic filtering

A water-stable organolead iodide material for overall photocatalytic CO_(2) reduction

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Nano Research 2022年第12期15卷 10084-10089页

作者： Rong Chen Guodong Gao Jingshan Luo institute of photoelectronic thin film devices and Technology Solar Energy Research CenterKey Laboratory of Photoelectronic Thin Film Devices and Technology of TianjinMinistry of Education Engineering Research Center of Thin Film Photoelectronic TechnologyRenewable Energy Conversion and Storage CenterNankai UniversityTianjin300350China

The utilization of perovskites as photocatalysts to convert CO_(2) into fuels and chemicals has received wide attention ***,their instability in water hinders their long-term application for overall photocatalytic CO_(2) ***,we integrate the water-stable perovskite-like organolead iodide crystalline material[Pb8I8(H2O)3]8+[-O2C(CH2)4CO_(2)-]4(TJU-16)with Au co-catalyst for photocatalytic CO_(2) reduction in aqueous solution without sacrificial *** the AM 1.5 G simulated illumination,the TJU-16 with 0.19 wt.‰ Au co-catalyst steadily generated electrons for CO_(2) reduction reaction,which was 2.2 times of pure *** Au0.19/TJU-16 catalyzed CO_(2) reduction at a rate of 84.2μmol·g-1·h-1,and achieved a solar-to-fuel(STF)conversion efficiency of 0.034%.Our work will motivate the rational design of water-stable perovskite-like materials for photocatalytic applications.

关键词： water-stable organolead iodide photocatalytic CO_(2)conversion

A hybrid ambipolar synaptic transistor emulating multiplexed neurotransmission for motivation control and experience-dependent learning

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Chinese Chemical Letters 2023年第2期34卷 557-562页

作者： Zhipeng Xu Yao Ni Hong Han Huanhuan Wei Lu Liu Shuo Zhang Hao Huang Wentao Xu institute of Optoelectronic thin film devices and Technology Key Laboratory of Optoelectronic Thin Film Devices and Technology of TianjinCollege of Electrical Information and Optical EngineeringNational Institute for Advanced MaterialsNankai UniversityTianjin 300350China

Artificial synapses with full synapse-like functionalities are of crucial importance for the implementation of neuromorphic computing and bioinspired intelligent systems. In particular, the development of artificial synapses with the capability to emulate multiplexed neural transmission is highly desirable, but remains challenging. In this work, we proposed a hybrid ambipolar synaptic transistor that combines two-dimensional(2D) molybdenum disulfide(Mo S_(2)) sheet and crystalline one-dimensional(1D) poly(3-hexylthiophene-2,5-diyl) polymer nanowires(P3HT NWs) as dual excitatory channels. Essential synaptic functions, including excitatory postsynaptic current, paired-pulse facilitation, synaptic potentiation and depression, and dynamic filtering were emulated using the synaptic transistor. Benefitting from the dual excitatory channels of the synaptic transistor, the device achieved a fast switch between short-term and long-term memory by altering the charge carriers in the dual channels, i.e., electrons and holes. This emulated the multiplexed neural transmission of different excitatory neurotransmitters, e.g., dopamine and noradrenaline. The plasticity-switchable artificial synapse(PSAS) simulates the task-learning process of individuals under different motivations and the impact of success or failure on task learning and memory, which promises the potential to enable complex functionalities in future neuromorphic intelligent electronics.

关键词： Hybrid ambipolar Artificial synapse Dual excitatory channels Fast-switching plasticity Task-learning process