Research on ZnO/Si heterojunction solar cells

作     者：Li Chen Xinliang Chen Yiming Liu Ying Zhao Xiaodan Zhang 

作者机构：Institute of Photo-electronic Thin Film Devices and Technology Nankai University Tianjin 300071 China Tianjin Key laboratory of Photo-electronic Thin Film Devices and Technology Nankai University Tianjin 300071 China Key laboratory of Opto-electronic Information Science and Technology for Ministry of Education Nankai University Tianjin 300071 China Mads Clausen Institute University of Southern Denmark Alsion 2 DK-6400 Sonderborg Denmark 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2017年第38卷第5期

页      面：62-72页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：Project supported by the State Key Development Program for Basic Research of China(Nos.2011CBA00706,2011CBA00707) the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan(No.13JCZDJC26900) the Tianjin Major Science and Technology Support Project(No.11TXSYGX22100) the National High Technology Research and Development Program of China(No.2013AA050302) the Fundamental Research Funds for the Central Universities(No.65010341) 

主　　题：textured surface ZnO films p-type c-Si substrates MOCVD technique AFORS-HET software solar cells 

摘      要：We put forward an n-ZnO/p-Si heterojunction solar cell model based on AFORS-HET simulations and provide experimental support in this ***：B（B-doped ZnO） thin films deposited by metal-organic chemical vapor deposition（MOCVD） are planned to act as electrical emitter layer on p-type c-Si substrate for photovoltaic *** investigate the effects of thickness,buffer layer,ZnO：B affinity and work function of electrodes on performances of solar cells through computer simulations using AFORS-HET software *** energy conversion efficiency of the ZnO：B（n）/ZnO/c-Si（p） solar cell can achieve 17.16%（V（oc）：675.8 mV,J（sc）：30.24 mA/cm^2,FF：83.96%） via *** a basis of optimized conditions in simulation,we carry out some experiments,which testify that the ZnO buffer layer of 20 nm contributes to improving performances of solar *** influences of growth temperature,thickness and diborane（B2H6） flow rates are also *** achieve an appropriate condition for the fabrication of the solar cells using the MOCVD *** obtained conversion efficiency reaches2.82%（V（oc）：294.4 mV,J（sc）：26.108 mA/cm^2,FF：36.66%）.