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Influence of growth temperature and thickness on the orientation of Cu(In,Ga)Se_2 film

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Optoelectronics Letters 2012年第5期8卷 348-351页

作者：李博研张毅刘玮孙云 Tianjin Key Laboratory for photoelectronic thin film devices and Technology Institute of Photo electronic Thin Film Devices and Technology

Cu(In,Ga)Se2(CIGS) films are deposited on the Na-free glass substrate using three-stage co-evaporation process,and the effects of thickness and growth temperature on the orientation of CIGS film are investigated by X-ray diffraction(XRD) and scanning electron microscopy(SEM).When the growth of CIGS film does not experience the Cu-rich process,the increase of the growth temperature at the second stage(Ts2) promotes the(112) orientation of CIGS film,and weakens the(220) ***,when the growth of CIGS film experiences Cu-rich process,the increase of Ts2 significantly promotes the(220) *** addition,with the thickness of CIGS film decreasing,the extent of(In,Ga)2Se3(IGS) precursor orientation does not change except for the intensity of Bragg peak,yet the(220) orientation of following CIGS film is hindered,which suggests that(112) plane preferentially grows at the initial growth of CIGS film.

关键词： Copper Gallium Growth temperature Scanning electron microscopy Sodium Substrates X ray diffraction

Texture and Se vacancy optimization induces high thermoelectric performance in Bi_(2)Se_(3) flexible thin films

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Rare Metals 2024年第6期43卷 2796-2804页

作者： Dong-Wei Ao Wei-Di Liu Yue-Xing Chen Fan Ma Yi-Jie Gu Zhuang-Hao Zheng School of Machinery and Automation Weifang UniversityWeifang 261061China Australian institute for Bioengineering and Nanotechnology The University of QueenslandBrisbane 4072Australia Shenzhen Key Laboratory of Advanced thin films and Applications Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong ProvinceCollege of Physics and Optoelectronic EngineeringShenzhen UniversityShenzhen518060China School of Materials Science and Engineering Inner Mongolia University of TechnologyHohhot 010051China

Bi_(2)Se_(3)-based flexible thin film with high thermoelectric performance is promising for the waste heat recovery *** this work,a novel post-selenization method is employed to prepare n-type Bi_(2)Se_(3)flexible thin films with highly textured *** strengthened texture and Se vacancy optimization can be simultaneously achieved by optimizing the selenization *** highly oriented texture leads to the increased carrier mobility and results in a high electric conductivity of~290.47 S·cm^(-1)at 623 ***,a high Seebeck coefficient(>110μW·K-1)is obtained due to the reduced carrier concentration,induced by optimizing vacancy ***,a high power factor of 3.49μW·cm^(-1)·K^(-2)at 623 K has been achieved in asprepared highly-bendable Bi_(2)Se_(3)flexible thin films selenized at 783 *** study introduces an effective post-selenization method to tune the texture structure and vacancies of Bi_(2)Se_(3)flexible thin films,and correspondingly achieves high thermoelectric performance.

关键词： Thermoelectric Bi_(2)Se_(3) Flexible thin film Post-selenization

Effects of annealing rate and morphology of sol–gel derived ZnO on the performance of inverted polymer solar cells

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Chinese Physics B 2013年第11期22卷 664-668页

作者：余璇胡子阳黄振华于晓明张建军赵庚申赵颖 institute of photo-electronic thin film devices and Technology of Nankai University Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education

The effects of annealing rate and morphology of sol–gel derived zinc oxide （ZnO） thin films on the performance of inverted polymer solar cells （IPSCs） are investigated. ZnO films with different morphologies are prepared at different annealing rates and used as the electron transport layers in IPSCs. The undulating morphologies of ZnO films fabricated at annealing rates of 10 ℃/min and 3 ℃/min each possess a rougher surface than that of the ZnO film fabricated at a fast annealing rate of 50 ℃/min. The ZnO films are characterized by atomic force microscopy （AFM）, optical transmittance measurements, and simulation. The results indicate that the ZnO film formed at 3 ℃/min possesses a good-quality contact area with the active layer. Combined with a moderate light-scattering, the resulting device shows a 16% improvement in power conversion efficiency compared with that of the rapidly annealed ZnO film device.

关键词： polymer solar cells zinc oxide thin film morphology annealing

Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells

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Science China(Physics,Mechanics & Astronomy) 2010年第11期53卷 2042-2046页

作者： YUAN YuJie 1,2,ZHANG KaiLiang 1,2,WEI Zhen 1,2 & GENG XinHua 3 1 College of electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China 2 Tianjin Key Laboratory of film Electronic and Communication devices,Tianjin University of Technology,Tianjin 300384,China 3 institute of photo-electronics thin film devices and technique,Nankai University,Tianjin 300071,China College of electronics Information Engineering Tianjin University of Technology Tianjin China Tianjin Key Laboratory of film Electronic and Communication devices Tianjin University of Technology Tianjin China institute of photo-electronics thin film devices and technique Nankai University Tianjin China

The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells,the influence of p-type layers on the performance of the solar cells was investigated,and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was *** experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers,and the performance of solar cells can be greatly improved by optimizing p *** have achieved an initial active-area efficiency of 8.17% (V oc =0.49 V,J sc =24.9 mA/cm 2 ,FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc =1.31 V,J sc =13.09 mA/cm 2 ,FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells.

关键词： microcrystalline silicon solar cells quantum confinement effect p-type layers

Reduction of the phosphorus contamination for plasma deposition of p-i-n microcrystalline silicon solar cells in a single chamber

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Chinese Physics B 2010年第9期19卷 638-642页

作者：王光红张晓丹许盛之郑新霞魏长春孙建熊绍珍耿新华赵颖 institute of photo-electronic thin film devices and Technology of Nankai University Key Laboratory of Photo-electronic Thin Film Devices and Technology of TianjinKey Laboratory of Opto-electronic Information Science and TechnologyMinistry of Education

This paper investigates several pretreatment techniques used to reduce the phosphorus contamination between solar cells. They include hydrogen plasma pretreatment, deposition of a p-type doped layer, i-a-Si：H or μc-Si：H covering layer between solar cells. Their effectiveness for the pretreatment is evaluated by means of phosphorus concentration in films, the dark conductivity of p-layer properties and cell performance.

关键词： phosphorus contamination single chamber microcrystalline silicon solar cells

Optical secret sharing by multi-step liquid crystal planar doublet panning and coupling

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Chinese Optics Letters 2024年第8期22卷 21-28页

作者： Zhichang Mo Yi Chen Xiangyu Zhu Zhouhao Zhang Dawei Li Jianda Shao Yuanan Zhao Jianguo Wang Laboratory of thin film Optics Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Key Laboratory of Materials for High Power Laser Chinese Academy of SciencesShanghai 201800China Henan Key Laboratory of Infrared Materials&Spectrum Measures and Applications School of PhysicsHenan Normal UniversityXinxiang 453007China Hangzhou institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China

The hologram, which is formed by phases coupled through cascade devices for secret information sharing, still carries a cracking risk. We propose a liquid crystal planar doublet as the information carrier, and new holograms generated by the new coupled phases when the relative displacements of the different liquid crystal layers change. The designed geometrical phases are generated by an optimized iterative restoration algorithm, and each holographic image formed by these phases is readable. This scheme achieves an increase in the capacity of the stored secret information and provides more misdirection, which is expected to have potential value in optical steganography and storage.

关键词： liquid crystal holography optical steganography displacement coupled geometrical phase

Flexible Cu（In, Ga）Se2 thin-film Solar Cells on Polyimide Substrate by Low-Temperature Deposition Process

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Chinese Physics Letters 2008年第2期25卷 734-736页

作者：张力何青姜伟龙李长健孙云 Key Laboratory of Opto-Electronic Information Science and Technology (Ministry of Education) Key Laboratory of Photo-Electronics Thin Film Devices and Techniques of Tianjin Institute of Photo-Electronic Thin film Device and Technology Nankai University Tianjin 300071

The electrical and structural properties of polycrystalline Cu（In, Ga）Se2 films grown on polyimide （PI） substrates below 400℃ via one-stage and three-stage co-evaporation process have been investigated by x-ray diffraction spectra （XRD）, scanning electron microscopy （SEM） and Hall effect measurement. As shown by XRD spectra, the stoichiometric CIGS films obtained by one-stage process exhibit the characteristic diffraction peaks of the （In0.68Ga0.32）2Se3 and Cu（In0.7Ga0.3）2Se. It is also found that the film structures indicate more columnar and compact than the three-stage process films from SEM images. The stoichiometric CIGS films obtained by three-stage process exhibit the coexistence of the secondary phase of （In0.68Ga0.32）2Se3, Cu2-xSe and Cu（In0.7Ga0.3）2Se. High net carrier concentration and sheet conductivity are also observed for this kind of film, related to the presence of Cu2-xSe phase. As a result, when the CIGS film growth temperature is below 400℃, the three-stage process is inefficient for solar cells. By using the one-stage co-evaporation process, the flexible CIGS solar cell on a PI substrate with the best conversion efficiency of 6.38% is demonstrated （active area 0.16cm^2）.

关键词： PRECURSORS

Two-step growth of VSe_2 films and their photoelectric properties

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Chinese Physics B 2019年第5期28卷 343-349页

作者： Yu Zeng Shengli Zhang Xiuling Li Jianping Ao Yun Sun Wei Liu Fangfang Liu Peng Gao Yi Zhang institute of photoelectronic thin film devices and Technology Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technology Tianjin institute of Power Source

We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low *** is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.

关键词： two-step route VSe2 selenization thin film

具有超强二阶非线性响应及优良防潮性能的一种中性分子型DMPO有机新材料

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Science China Materials 2024年第7期67卷 2285-2292页

作者：安然许向东李丙轩韩俊孙瑞良张敏刚蒋亚东 State Key Laboratory of Electronic thin films and Integrated devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China Fujian institute of Research on the Structure of Matter Chinese Academy of SciencesFuzhou 350102China

具有强光学非线性和高稳定性的非线性光学(NLO)有机材料因其潜在的广泛应用而备受关注.本研究中,我们设计并系统地研究了具有超强二阶非线性光学响应的一种新型NLO查尔酮衍生物—1-(4-甲氧基苯基)-3-(4-乙氧基苯基)-2-丙烯基-1-酮(DMPO)... 详细信息

具有强光学非线性和高稳定性的非线性光学(NLO)有机材料因其潜在的广泛应用而备受关注.本研究中,我们设计并系统地研究了具有超强二阶非线性光学响应的一种新型NLO查尔酮衍生物—1-(4-甲氧基苯基)-3-(4-乙氧基苯基)-2-丙烯基-1-酮(DMPO).合成得到的这种新设计的DMPO仅在5天内即可快速生长出尺寸为10×5×4 mm^(3)的DMPO单晶.这些DMPO晶体由中性有机分子组成,它们在较宽的波段600–1800 nm范围具有高透明性,还拥有适度的光学带隙(2.51 eV),并展现出卓越的抗潮解性能.重要的是,DMPO实测的二次谐波产生(SHG)响应高达基准材料4-(4-二甲氨基苯乙烯基)甲基吡啶对甲苯磺酸盐(DAST)的1.86倍,证实了DMPO具有优良的宏观二阶光学非线性性质.因此,DMPO是集多种优点于一身的一种有机NLO新材料,可广泛应用于NLO领域.

关键词： organic nonlinear material DMPO simulations measurements SHG