Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells

作     者：YUAN YuJie 1,2,ZHANG KaiLiang 1,2,WEI Zhen 1,2 & GENG XinHua 3 1 College of Electronics Information Engineering,Tianjin University of Technology,Tianjin 300384,China 2 Tianjin Key Laboratory of Film Electronic and Communication Devices,Tianjin University of Technology,Tianjin 300384,China 3 Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China 

作者机构：College of Electronics Information Engineering Tianjin University of Technology Tianjin China Tianjin Key Laboratory of Film Electronic and Communication Devices Tianjin University of Technology Tianjin China Institute of Photo-Electronics Thin Film Devices and Technique Nankai University Tianjin China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2010年第53卷第11期

页      面：2042-2046页

核心收录：

学科分类：08[工学] 080502[工学-材料学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Basic Research Program of China (Grant Nos.2006CB202602 and 2006CB202603) the National Natural Science Foundation of China (Grant No.60806030) Tianjin Natural Science Foundation (Grant No.08JCYBJC14600) 

主　　题：microcrystalline silicon solar cells quantum confinement effect p-type layers 

摘      要：The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells,the influence of p-type layers on the performance of the solar cells was investigated,and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was *** experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers,and the performance of solar cells can be greatly improved by optimizing p *** have achieved an initial active-area efficiency of 8.17% (V oc =0.49 V,J sc =24.9 mA/cm 2 ,FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc =1.31 V,J sc =13.09 mA/cm 2 ,FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells.