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Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

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Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu High-Frequency High-Voltage Device and integrated circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)*** fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

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Performance improvements in complementary metal oxide semiconductor devices and circuits based on fin field-effect transistors using 3-nm ferroelectric Hf0.5Zr0.5O2

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Rare Metals 2024年第7期43卷 3242-3249页

作者： Zhao-Hao Zhang Yan-Na Luo Gao-Bo Xu Jia-Xin Yao Zhen-Hua Wu Hong-Bin Zhao Qing-Zhu Zhang Hua-Xiang Yin Jun Luo Wen-Wu Wang Hai-Ling Tu integrated Circuit Advanced R&D Center Institute of Microelectronics of Chinese Academy of Sciences School of integrated circuits University of Chinese Academy of Sciences State Key Laboratory of Advanced Materials for Smart Sensing General Research Institute for Nonferrous Metals

In this work,a conventional HfO2gate dielectric layer is replaced with a 3-nm ferroelectric（Fe） HZO layer in the gate stacks of advanced fin field-effect transistors（FinFETs）.Fe-induced characteristics,e.g.,negative drain induced barrier lowering（N-DIBL） and negative differential resistance（NDR）,are clearly observed for both p-and n-type HZO-based *** characteristics are attributed to the enhanced ferroelectricity of the 3-nm hafnium zirconium oxide（HZO） film,caused by Al doping from the TiAlC capping *** mechanism is verified for capacitors with structures similar to the *** to the enhanced ferroelectricity and N-DIBL phenomenon,the drain current(IDS)of the HZO-FinFETs is greater than that of HfO2-FinFETs and obtained at a lower operating ***,circuits based on HZO-FinFET achieve higher performance than those based on HfO2-FinFET at a low voltage drain(VDD),which indicates the application feasibility of the HZO-FinFETs in the ultralow power integrated circuits.

关键词： FinFET Ferroelectric Hafnium zirconium oxide Subthreshold swing Low power

Chipless textile electronics: human body-coupled fiber for wireless energy harvesting and signal transmission

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Science China Materials 2024年第7期67卷 2367-2368页

作者： Yixuan Wang Zuqing Yuan Guozhen Shen School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing 100081China

Wearable technology is rapidly advancing through the integration of electronic devices and textiles,enabling intelligent interaction between clothing and the surrounding *** electronics are specifically designed to provide functions such as sensing,computation,display,and ***,traditional wearable devices that rely on rigid von Neumann architectures and incorporate silicon chips face challenges in seamless integration,energy efficiency,and comfort[1–3].Difficulties arise when attempting to integrate complex circuits and electronic components,which are traditionally relied upon for signal modulation,into soft fibers[4,5].Recent reports have begun to explore alternative architectures for wearable devices that can incorporate electronics into a single fiber[6].However,this process presents challenges in simultaneously controlling energy capture and release within a single fiber.

关键词： fiber signal energy

On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication

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Nano Research 2024年第7期17卷 6544-6549页

作者： Zhiman Zhou Kunxuan Liu Di Wu Yunrui Jiang Ranran Zhuo Pei Lin Zhifeng Shi Yongtao Tian Wei Han Longhui Zeng Xinjian Li School of Physics and microelectronics Key Laboratory of Material Physics Ministry of EducationZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCalifornia 92093USA institute of microelectronics and integrated circuits School of MicroelectronicsHubei UniversityWuhan 430062China

Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical ***,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV *** limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application ***,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si *** process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV *** device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,***,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are *** work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

关键词： germanium diselenide van der Waals(vdW)integration ultraviolet enhanced broadband photodetection imaging

High-performance flexible semiconductor fibres for multi-scenario communication applications

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Science China Materials 2024年第7期67卷 2363-2364页

作者： Qinghui Lin Yang Li Guozhen Shen School of Information Science and Engineering University of JinanJinan 250022China School of microelectronics Shandong UniversityJinan 250101China School of integrated circuits and Electronics Beijing institute of Technology Beijing 100081China

With the advances in the field of flexible fibre technology in recent years,a variety of flexible fibres with different preparation processes have emerged[1,2].However,most of the flexible fibres in the past have structural breaks,making them unsuitable for long-term use as wearable fabrics[3,4].Glass semiconductors are widely used in thermally stretched fibres due to their advantages such as controllable fluidity,but they suffer from electronic defects compared with crystalline semi conductors in electronic semiconductors such as silicon(Si)and germanium(Ge)[5].Obviously,the semiconductor component in flexible optic fibres is a key component in regulating their mechanical and electrical properties[6].

关键词： wear fibres fibre

Effects of the VGS sweep range on the short channel effect in negative capacitance FinFETs

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Science China(Information Sciences) 2024年第6期 463-464页

作者： Fan ZHANG Zhaohao ZHANG Jiaxin YAO Qingzhu ZHANG Gaobo XU Zhenhua WU Huan LIU Genquan HAN Yan LIU Huaxiang YIN integrated Circuit Advanced Process R&D Center State Key Lab of Fabrication Technologies for Integrated CircuitsInstitute of Microelectronics of Chinese Academy of Sciences School of microelectronics Xidian University School of integrated circuits University of Chinese Academy of Sciences

As the CMOS technology scaling is reaching fundamental limits,there is a substantial demand for energy-efficient devices with lower operating *** capacitance field-effect transistors （NCFETs） exhibit the capability to amplify the gate voltage and become promising candidates for future advanced process *** （FE） HfO2-based materials,

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Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications

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Nano-Micro Letters 2024年第10期16卷 403-434页

作者： Yilin Sun Huaipeng Wang Dan Xie School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing 100081People's Republic of China School of integrated circuits Beijing National Research Center for Information Science and Technology(BNRist)Tsinghua UniversityBeijing 100084People's Republic of China

Manipulating the expression of synaptic plasticity of neuromorphic devices provides fascinating opportunities to develop hardware platforms for artifi-cial ***,great efforts have been devoted to exploring biomimetic mechanisms of plasticity simulation in the last few *** progress in various plasticity modulation techniques has pushed the research of synaptic electronics from static plasticity simulation to dynamic plasticity modulation,improving the accuracy of neuromorphic computing and providing strategies for implementing neuromorphic sensing ***,several fascinating strategies for synap-tic plasticity modulation through chemical techniques,device structure design,and physical signal sensing are *** chemical techniques,the underly-ing mechanisms for the modification of functional materials were clarified and its effect on the expression of synaptic plasticity was also *** on device structure design,the reconfigurable operation of neuromorphic devices was well demonstrated to achieve programmable neuromorphic ***,integrating the sensory units with neuromorphic processing circuits paved a new way to achieve human-like intelligent perception under the modulation of physical signals such as light,strain,and ***,considering that the relevant technology is still in the basic exploration stage,some prospects or development suggestions are put forward to promote the development of neuromorphic devices.

关键词： Plasticity modulation Dynamic plasticity Chemical techniques Programmable operation Neuromorphic sensing

Mitigating set-stuck failure in 3D phase change memory: substituting square pulses with surge pulses

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Science China(Information Sciences) 2024年第5期67卷 295-301页

作者： Ninghua LI Wang CAI Jun XIANG Hao TONG Weiming CHENG Xiangshui MIAO School of integrated circuits Huazhong University of Science and Technology Hubei Yangtze Memory Laboratories Hubei institute of Measurement and Testing Technology

In the devices that integrate phase change memory(PCM) and ovonic threshold switching(OTS),the OTS threshold voltage often surpasses the RESET operation voltage of PCM. The conventional application of square pulses hinders the successful completion of the SET operation in these integrated devices. To address this challenge, a novel pulse called the surge pulse is introduced, which comprises a high amplitude pulse for OTS activation and a low amplitude pulse for PCM operation. By employing COMSOL simulation,the operational effectiveness of both square pulses and surge pulses is validated. Test results reveal that using a square pulse to operate the integrated device accelerates the occurrence of SET-stuck failure(SSF).In contrast, the surge pulse enables the integrated device to operate for at least 1000 cycles while preserving the essential cyclic characteristics. Additionally, an investigation into the overshoot component of the surge pulse is conducted, revealing that an increase in overshoot amplitude and pulse width also accelerates the emergence of SSF. By applying the theory of ion migration induced by the electric field, the root cause of SSF in integrated devices is explained, and the accuracy of the theory is validated through the application of a reverse pulse. In summary, this study elucidates the rationality of replacing the square pulse with a surge pulse, presenting a superior approach for operating PCM and OTS integrated devices.

关键词： surge pulse phase change memory (PCM) integration SET-stuck failure (SSF) square pulse

Wireless multisite sensing systems for continuous physiological monitoring

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Science China Materials 2024年第6期67卷 2045-2047页

作者： Ruilai Wei Qilin Hua Guozhen Shen School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing 100081China institute of Flexible Electronics Beijing Institute of TechnologyBeijing 102488China

Respiratory diseases rank as the third leading cause of adult mortality[1],while cardiopulmonary and gastrointestinal issues are the primary cause of death within the first five years of a child’s life[2].The monitoring of cardiac,respiratory,and gastrointestinal sounds plays a vital role in routine care,as alterations or absence of these body sounds can serve as indicators of underlying diseases.

关键词： routine continuous monitoring

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