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highly stretchable kirigami-patterned nanofiber-based nanogenerators for harvesting human motion energy to power wearable electronics

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materials Futures 2024年第2期3卷 131-140页

作者： Chuan Ning Shengxin Xiang Xiupeng Sun Xinya Zhao Chuanhui Wei Lele Li Guoqiang Zheng Kai Dong College of materials Science and Engineering Key Laboratory of Material Processing and Mold(Ministry of Education)Zhengzhou UniversityZhengzhou 450001People’s Republic of China Key Laboratory of materials Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450001People’s Republic of China CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro-Nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 101400People’s Republic of China School of Nanoscience and technology University of Chinese Academy of SciencesBeijing 100049People’s Republic of China

Wearable electronics are advancing towards miniaturization and ***,traditional energy supply methods have largely hindered their *** effective solution to this problem is to convert human mechanical energy into electricity to power wearable electronic ***,it is greatly attractive to design flexible,foldable and even stretchable energy harvesting ***,we use the electrospinning and kirigami approach to develop a type of highly stretchable kirigami-patterned nanofiber-based triboelectric nanogenerator(K-TENG).Due to its innovative structural design,the K-TENG can achieve a tensile strain of 220%,independent of the tensile properties of the material *** a person swings their arms,the K-TENG fixed to the clothing can convert mechanical energy from human movement into electrical *** produced electricity can directly drive 50 LED lights and a digital watch,or be stored in a lithium battery to charge the smartwatch and smartphone,*** study employs a new method to fabricate a stretchable triboelectric nanogenerator and demonstrates its promising applications in wearable power technology.

关键词： stretchable triboelectric nanogenerators kirigami energy harvesting

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Investigation of Quantum Dot Color Filter Micro-LED Display

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Photonic Sensors 2024年第1期14卷 40-47页

作者： Xuhui PENG Yang ZENG Sitao HUO Zhenyuan YANG Xiaoping HUANG Qing ZHAO School of Resources and Environment University of Electronic Science and Technology of ChinaChengdu 611731China Yangtze Delta Region institute(Huzhou) University of Electronic Science and Technology of ChinaHuzhou 313001China Shanghai Tianma microelectronics Shanghai 201201China

In this work,we present the investigation of the quantum dot color filter(QDCF)micro-light emitting diode(micro-LED)*** and red quantum dot photoresist(QDPR)materials are patterned into a pixelated array and precisely bonded with an all-blue micro-light emitting diode(micro-LED)substrate,forming a red,green,and blue(RGB)full color display through color conversion.A few factors that influence the achievable color gamut are further *** resulting 1.1-inch 228-pixels per inch(ppi)display demo shows the good *** findings in this paper pave a way to the future industrialization of the micro-LED display.

关键词： Quantum dot color filter(QDCF) color conversion micro-light emitting diode(micro-LED) color gamut

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电沉积Mo和Mo-Co合金纳米线用于互联电阻的电阻率改性

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Engineering 2024年第1期32卷 127-137页

作者： Jun Hwan Moon Taesoon Kim Youngmin Lee Seunghyun Kim Yanghee Kim Jae-Pyoung Ahn Jungwoo Choi Hyuck Mo Lee Young Keun Kim Department of materials Science and Engineering Korea UniversitySeoul 02841Republic of Korea Department of materials Science and Engineering Korea Advanced Institute of Science and EngineeringDaejeon 34141Republic of Korea Advanced Analysis Center Korea Institute of Science and TechnologySeoul 02792Republic of Korea Research Resources Division Korea Institute of Science and TechnologySeoul 02792Republic of Korea

Achieving historically anticipated improvement in the performance of integrated circuits is challenging,due to the increasing cost and complexity of the required technologies with each new *** overcome this limitation,the exploration and development of novel interconnect materials and processes are highly desirable in the microelectronics ***(Mo)is attracting attention as an advanced interconnect material due to its small resistivity size effect and high cohesive energy;however,effective processing methods for such materials have not been widely ***,we investigate the electrochemical behavior of ions in the confined nanopores that affect the electrical properties and microstructures of nanoscale Mo and Mo-Co alloys prepared via template-assisted *** in an electrolyte allow the deposition of extremely pure metal materials,due to their interac-tion with metal ions and *** this study,boric acid and tetrabutylammonium bisulfate(TBA)were added to an acetate bath to inhibit the hydrogen evolution *** accelerated the reduction of Mo at the surface by inducing surface conduction on the *** Mo nanowires with a 130 nm diameter synthesized through high-aspect-ratio nanopore engineering exhibited a resistivity of(63.0±17.9)μΩ*** also evaluated the resistivities of Mo-Co alloy nanowires at various compo-sitions toward replacing irreducible conventional barrier/liner *** intermetallic compound formed at a Mo composition of 28.6 at%,the resistivity of the Mo-Co nanowire was(58.0±10.6)μΩcm,indicat-ing its superior electrical and adhesive properties in comparison with those of conventional barriers such as TaN and ***,density functional theory and non-equilibrium Green's function calcula-tions confirmed that the vertical resistance of the via structure constructed from Mo-based materials was 21%lower than that of a conventional Cu/Ta/TaN structure.

关键词： Molybdenum Molybdenum-cobalt Interconnect Microstructure Electrodeposition Density functional theory

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Organic-inorganic hybrid piezotronic bipolar junction transistor for pressure sensing

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Microsystems & Nanoengineering 2024年第3期10卷 229-244页

作者： Emad Iranmanesh Zihao Liang Weiwei Li Congwei Liao Shunyu Jin Chuan Liu Kai Wang Shengdong Zhang Charalampos Doumanidis Gehan A.J.Amaratunga Hang Zhou Guangdong Provincial Key Laboratory of In-Memory Computing Chips School of Electronic and Computer EngineeringPeking University Shenzhen Graduate SchoolShenzhen 518055P.R.China School of Mechanical Engineering Guangdong Technion-Israel Institute of TechnologyShantou 515063P.R.China State Key Laboratory of microelectronics Device and Integrated technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029P.R.China Hefei National Research Center for Physical Sciences at the Microscale University of Science and Technology of ChinaHefei 23000PR China School of Electronics and Information technology Sun Yat-sen UniversityNo.132 East Waihuan RoadGuangzhou 510006P.R.China Department of Mechanical Aerospaceand Biomedical EngineeringUniversity of South AlabamaShelby Hall3128MobileAL 36688USA Electrical Engineering Division Department of EngineeringUniversity of Cambridge9 JJ Thomson AvenueCambridge CB30FAUnited Kingdom Zhejiang University International CampusHainingChina

With the rapid development of the Internet of Things(IoTs),wearable sensors are playing an increasingly important role in daily monitoring of personal health and *** signal-to-noise-ratio has become the most critical performance factor to *** enhance it,on the one hand,good sensing materials/devices have been employed;on the other hand,signal amplification and noise reduction circuits have been ***,most of these devices and circuits work in an active sampling mode,requiring frequent data acquisition and hence,entailing high-power *** this scenario,a flexible and wearable event-triggered sensor with embedded signal amplification without an external power supply is of great ***,we report a flexible two-terminal piezotronic n-p-n bipolar junction transistor(PBJT)that acts as an autonomous and highly sensitive,current-and/or voltage-mediated pressure *** PBJT is formed by two back-to-back piezotronic diodes which are defined as emitter-base and collectorbase *** force exertion on the emitter side,as a result of the piezoelectric effect,the emitter-base diode is forward biased while the collector-base diode is reverse *** to the inherent BJT amplification effect,the PBJT achieves record-high sensitivities of 139.7 kPa^(-1)(current-based)and 88.66 kPa^(-1)(voltage-based)in sensing *** PBJT also has a fast response time of<110 ms under exertion of dynamic stimuli ranging from a flying butterfly to a gentle finger ***,the PBJT advances the state of the art not only in terms of sensitivity but also in regard to being self-driven and autonomous,making it promising for pressure sensing and other IoT applications.

关键词： bipolar transistor IoT

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high-power,electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si(100)heterogeneous substrate

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Light(Science & Applications) 2024年第8期13卷 1512-1523页

作者： Jialiang Sun Jiajie Lin Min Zhou Jianjun Zhang Huiyun Liu Tiangui You Xin Ou National Key Laboratory of materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyCASShanghai 200050China Center of materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences100049 BeijingChina College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of Sciences100190 BeijingChina Department of Electronic and Electrical Engineering University College LondonLondon WC1E 7JEUK

A reliable,efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon *** the impressive advances that have been made in developing 1.3-μm Si-based quantum dot(QD)lasers,extending the wavelength window to the widely used 1.55-μm telecommunication region remains *** this study,we develop a novel photonic integration method of epitaxial growth of III-V on a wafer-scale InP-on-Si(100)(InPOS)heterogeneous substrate fabricated by the ion-cutting technique to realize integrated lasers on Si *** ion-cutting plus epitaxial growth approach decouples the correlated root causes of many detrimental dislocations during heteroepitaxial growth,namely lattice and domain *** this approach,we achieved state-of-the-art performance of the electrically-pumped,continuouswave(CW)1.55-μm Si-based laser with a room-temperature threshold current density of 0.65 kA/cm^(-2),and output power exceeding 155mW per facet without facet coating in CW *** lasing at 120℃ and pulsed lasing at over 130℃ were *** generic approach is also applied to other material systems to provide better performance and more functionalities for photonics and microelectronics.

关键词： pumped power quantum

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Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

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Journal of Semiconductors 2024年第4期45卷 69-75页

作者： Rui Huang Zhiyong Wang Kai Wu Hao Xu Qing Wang Yecai Guo School of Electronic and Information Engineering Wuxi UniversityWuxi 214105China institute of Advanced technology on Semiconductor Optics&Electronics Institute of Laser EngineeringBeijing University of TechnologyBeijing 100124China

high-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding *** influence of Ar plasma activation on surface morphology is *** the annealing temperature is 300℃,the bonding strength reaches a maximum of 6.2 *** addition,a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different *** shape varia-tion of the wafer is directly proportional to the annealing *** an annealing temperature of 400℃,the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 *** interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron *** characterization of interface elements by X-ray energy dispersion spectroscopy indi-cates that the elements at the interface undergo mutual diffusion,which is beneficial for improving the bonding strength of the *** is an amorphous transition layer with a thickness of about 5 nm at the bonding *** preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits,improve the performance of materials and devices,and promote the development of microelectronics technology.

关键词： plasma-activated bonding bonding strength thermal stress model mutual diffusion

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Room-temperature ferromagnetism and piezoelectricity in metalfree 2D semiconductor crystalline carbon nitride

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Nano Research 2024年第6期17卷 5670-5679页

作者： Yong Wang Dingyi Yang Wei Xu Yongjie Xu Yu Zhang Zixuan Cheng Yizhang Wu Xuetao Gan Wei Zhong Yan Liu Genquan Han Yue Hao Wide Bandgap Semiconductor technology Disciplines State Key Laboratory School of MicroelectronicsAcademy of Advanced Interdisciplinary ResearchXidian UniversityXi’an 710071China Emerging Device and Chip Laboratory Hangzhou Institute of TechnologyXidian UniversityHangzhou 311200China INRS Centre for Energy Materials and Telecommunications1650 Boul.Lionel BouletVarennesQC J3X 1P7Canada National Laboratory of Solid State Microstructures Collaborative Innovation Center of Advanced Microstructures and Jiangsu Provincial Key Laboratory for NanotechnologyNanjing UniversityNanjing 210093China School of Education Jiangsu Open UniversityNanjing 210036China Department of Physics Shaanxi University of Science and TechnologyXi’an 710021China Department of Applied Physical Sciences The University of North Carolina at Chapel HillChapel HillNC 27514USA Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi'an 710129 China

Two-dimensional(2D)materials that combine ferromagnetic,semiconductor,and piezoelectric properties hold significant potential for both fundamental research and spin electronic ***,the majority of reported 2D ferromagnetic-semiconductor-piezoelectric materials rely on d-electron systems,which limits their practical applications due to a Curie temperature lower than room temperature(RT).Here,we report a high-crystallinity carbon nitride(CCN)material based on sp-electrons using a chemical vapor deposition *** exhibits a band gap of 1.8 eV and has been confirmed to possess substantial in-plane and out-of-plane ***,we acquired clear evidences of ferromagnetic behavior at room *** structural characterizations combined with theoretical calculations reveal that incorporating structural oxygen into the highly ordered heptazine structure causes partial substitution of nitrogen sites,which is primarily responsible for generating room-temperature ferromagnetism and *** a result,the strain in wrinkles can effectively modulate the domain behavior and piezoelectric potential at room *** addition of RT ferromagnetic-semiconductor-piezoelectric material based on sp-electrons to the family of two-dimensional materials opens up numerous possibilities for novel applications in fundamental research and spin electronic devices.

关键词： crystallinity carbon nitride room-temperature ferromagnetism piezoelectricity magnetic force microscopy density functional theory(DFT)calculations

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Fabrication and evaluation of high-performance 3D interpenetrated network structures SiC/Al composites with high-purity plate-like a-SiC framework

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Journal of Materiomics 2024年第2期10卷 499-510页

作者： Jiawei Xie Jinhui Zou Liangcheng Tong Syieluing Wong Xin Guo Hang Qin Pengzhao Gao Wenming Guo Hanning Xiao College of materials Science and Engineering Hunan UniversityChangsha410082China Department of Chemical Engineering and Chemistry Eindhoven University of TechnologyEindhoven5612 AZNetherlands College of Automation and Information Engineering Xi'an University of TechnologyXi'an710048China

To reinforce compatibility with the thermophysical and mechanical properties of SiC/Al composites for electronic packaging to improve the stability and reduce fatigue failure of electronic integrated devices,a novel 3D SiC reinforced framework with interpenetrated plate-like a-SiC grains was synthesized.A small amount of doped a-SiC was seeded to induce the transformation of b-SiC to plate-like a-SiC at 2,300℃,forming a high-purity a-SiC strongly bonded ***/gas pressure infiltration of Al alloy was subsequently used to manufacture the 3D interpenetrated network structure SiC/Al(SiC3D/Al)*** results showed that 15%(in mass)seeds provided the composite with the optimal comprehensive performance,including a low coefficient of thermal expansion(CTE)of 5.54×10^(-6)K^(-1),a high thermal conductivity(l)of 239.08 W·m^(-1)·K^(-1),the highest flexural strength of 326.84 MPa,and a low thermal deformation parameter(TDP)of ***-purity plate-like grains enhanced the purity of the framework promoting a significant improvement in *** the seed content increased to 20%(in mass),both CTE and l reached optimal values of 5.22×10^(-6)K^(-1)and 243.14 W·m^(-1)·K^(-1),but the mechanical properties declined by 10.30%.The synergistic effect of the well-bonded interface and the high-purity 3D SiC framework balanced excellent mechanical properties and multiple thermal functions.

关键词： α-SiC seed Phase transformation Thermophysical properties SiC_(3D)/Al composites Electronic packaging

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通过高通量研究识别用于本征陡坡晶体管的原子级薄孤立能带沟道材料

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Science Bulletin 2024年第10期69卷 1427-1436页

作者：屈恒泽张胜利曹江吴振华柴扬李卫胜李连忠任文才王欣然曾海波 MIIT Key Laboratory of Advanced Display materials and Devices College of Material Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China School of Electronic and Optical Engineering Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of microelectronics Device and Integrated technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China Department of Applied Physics The Hong Kong Polytechnic UniversityHong Kong 999077China National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210023China Department of Mechanical Engineering The University of Hong KongHong Kong 999077China Shenyang National Laboratory for materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215009China

Developing low-power FETs holds significant importance in advancing logic circuits,especially as the feature size of MOSFETs approaches sub-10 ***,this has been restricted by the thermionic limitation of SS,which is limited to 60 mV per decade at room ***,we proposed a strategy that utilizes 2D semiconductors with an isolated-band feature as channels to realize subthermionic SS in *** high-throughput calculations,we established a guiding principle that combines the atomic structure and orbital interaction to identify their sub-thermionic transport *** guides us to screen 192 candidates from the 2D material database comprising 1608 ***,the physical relationship between the sub-thermionic transport performances and electronic structures is further revealed,which enables us to predict 15 systems with promising device performances for low-power applications with supply voltage below 0.5 *** work opens a new way for the low-power electronics based on 2D materials and would inspire extensive interests in the experimental exploration of intrinsic steep-slope MOSFETs.

关键词： 2D materials Electronic band structures Transport properties Steep-slope transistors DFT-NEGF calculations

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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow

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Nano Research 2024年第8期17卷 7557-7566页

作者： Minghui Yin Haitao Xu Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li institute of microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China State Key Lab of Fabrication Technologies for Integrated Circuits Beijing 100029China Beijing Hua Tan Yuan Xin Electronics technology Co. Ltd.Beijing 101399China institute of Carbon-based Thin Film Electronics Peking UniversityShanxi 030012China Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics School of ElectronicsPeking UniversityBeijing 100871China

Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure *** this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design *** proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 *** of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator *** the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μ*** research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.

关键词： carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)

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