Hybrid bonding of GaAs and Si wafers at low temperature by Ar plasma activation

作     者：Rui Huang Zhiyong Wang Kai Wu Hao Xu Qing Wang Yecai Guo Rui Huang;Zhiyong Wang;Kai Wu;Hao Xu;Qing Wang;Yecai Guo

作者机构：School of Electronic and Information EngineeringWuxi UniversityWuxi 214105China Institute of Advanced Technology on Semiconductor Optics&ElectronicsInstitute of Laser EngineeringBeijing University of TechnologyBeijing 100124China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第4期

页      面：69-75页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was financially supported by the National Nature Science Foundation of China(Grant No.61673222) the Natural Science Foundation of the Jiangsu Higher Education Institutions of China(Grant No.23KJB430036) Wuxi University Research Start-up Fund for Introduced Talents(Grant No.2022r036) 

主　　题：plasma-activated bonding bonding strength thermal stress model mutual diffusion 

摘      要：High-quality bonding of 4-inch GaAs and Si is achieved using plasma-activated bonding *** influence of Ar plasma activation on surface morphology is *** the annealing temperature is 300℃,the bonding strength reaches a maximum of 6.2 *** addition,a thermal stress model for GaAs/Si wafers is established based on finite element analysis to obtain the distribution of equivalent stress and deformation variables at different *** shape varia-tion of the wafer is directly proportional to the annealing *** an annealing temperature of 400℃,the maximum protrusion of 4 inches GaAs/Si wafers is 3.6 *** interface of GaAs/Si wafers is observed to be dense and defect-free using a transmission electron *** characterization of interface elements by X-ray energy dispersion spectroscopy indi-cates that the elements at the interface undergo mutual diffusion,which is beneficial for improving the bonding strength of the *** is an amorphous transition layer with a thickness of about 5 nm at the bonding *** preparation of Si-based GaAs heterojunctions can enrich the types of materials required for the development of integrated circuits,improve the performance of materials and devices,and promote the development of microelectronics technology.