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Experimental demonstration of SnO_(2) nanofiber-based memristors and their data-driven modeling for nanoelectronic applications

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Chip 2023年第4期2卷 142-153页

作者： Soumi Saha Madadi Chetan Kodand Reddy Tati Sai Nikhil Kaushik Burugupally Sanghamitra DebRoy Akshay Salimath Venkat Mattela Surya Shankar Dan Parikshit Sahatiya Department of Electrical&Electronics Engineering Birla Institute of Technology and Science PilaniHyderabad CampusHyderabad 500078India Department of Computer Science and Information systems Birla Institute of Technology and Science PilaniHyderabad CampusHyderabad 500078India Nanomagnetic Division Ceremorphic India Pvt LtdIndia Ceremorphic Inc.San JoseCA 95131USA

This paper demonstrated the fabrication,characterization,datadriven modeling,and practical application of a 1D SnO_(2)nanofiber-based memristor,in which a 1D SnO_(2)active layer wassandwiched between silver(Ag)and aluminum(Al)*** yielded a very high ROFF:RON of~104(ION:IOFF of~105)with an excellent activation slope of 10 mV/dec,low set voltage ofVSET~1.14 V and good *** paper physically explained the conduction mechanism in the layered SnO_(2)*** conductive network was composed of nanofibersthat play a vital role in the memristive action,since more conductive paths could facilitate the hopping of electron *** structures experimentally extracted with the adoption of ultraviolet photoelectron spectroscopy strongly support the claimsreported in this *** machine learning(ML)–assisted,datadriven model of the fabricated memristor was also developedemploying different popular algorithms such as polynomialregression,support vector regression,k nearest neighbors,andartificial neural network(ANN)to model the data of the *** have proposed two types of ANN models(type I andtype II)algorithms,illustrated with a detailed flowchart,to modelthe fabricated *** with standard ML techniques shows that the type II ANN algorithm provides the bestmean absolute percentage error of 0.0175 with a 98%R^(2)*** proposed data-driven model was further validated with the characterization results of similar new memristors fabricated adoptingthe same fabrication recipe,which gave satisfactory ***,the ANN type II model was applied to design and implementsimple AND&OR logic functionalities adopting the fabricatedmemristors with expected,near-ideal characteristics.

关键词： Nanofiber-based memristors Data-driven modeling Artificial neural network(ANN) SnO_(2)

高质量单层MoS_2的可控合成及其在微纳电子方面的应用（英文）

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Science China Materials 2016年第3期59卷 182-190页

作者：杨小年李强胡国锋王泽高杨振宇刘兴强董明东潘曹峰 Beijing institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Interdisciplinary Nanoscience Center (iNANO) Aarhus University Department of Physics and Key Laboratory of Artificial micro- and Nano-structures of Ministry of Education Wuhan University

二维层状材料由于其在光电器件方面的潜在应用引起了广泛关注,二硫化钼(MoS_2)是其中研究最多的材料之一.单层二硫化钼可通过机械剥离或者化学气相合成的方法制备,但是与石墨烯相比,大面积且高质量的单层二硫化钼单晶的可控合成仍然有... 详细信息

二维层状材料由于其在光电器件方面的潜在应用引起了广泛关注,二硫化钼(MoS_2)是其中研究最多的材料之一.单层二硫化钼可通过机械剥离或者化学气相合成的方法制备,但是与石墨烯相比,大面积且高质量的单层二硫化钼单晶的可控合成仍然有待提高.本文报道了一种可控合成大面积高质量单层MoS_2单晶的方法,合成出了边长达405μm的单层二硫化钼三角形.对产物进行了光谱表征,结果表明其光学性质十分均匀,透射电镜表征结果表明产物是单晶结构.基于单层MoS_2的场效应晶体管(FET)表现出良好的电学性能,其载流子迁移率高达21.8 cm^2 V^(-1) s^(-1),光响应度为7 A W^(-1),响应时间仅为20 ms.此合成方法使单层MoS_2的制备更加简易可靠,可促进其进一步研究及应用.

关键词： controlled synthesis method high-quality MoS2 monolayer growth parameters photoresponse properties

Low-power emerging memristive designs towards secure hardware systems for applications in internet of things

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Nano Materials Science 2021年第2期3卷 186-204页

作者： Nan Du Heidemarie Schmidt Ilia Polian Department Nano Device Technology Fraunhofer Institute for Electronic Nano SystemsTechnologie-Campus 309126ChemnitzGermany Faculty of Electrical Engineering and Information Technology Chemnitz University of Technology(TU Chemnitz)Straße der Nationen 6209126ChemnitzGermany Department of Quantum Detection Leibniz Institute of Photonic Technology(IPHT)Albert-Einstein-Str.907745JenaGermany institute for Solid State Physics Friedrich Schiller University JenaFürstengraben 107743JenaGermany institute of Computer Engineering and Computer Architecture(ITI) University of StuttgartPfaffenwaldring 4770569StuttgartGermany

Emerging memristive devices offer enormous advantages for applications such as non-volatile memories and inmemory computing(IMC),but there is a rising interest in using memristive technologies for security applications in the era of internet of things(IoT).In this review article,for achieving secure hardware systems in IoT,lowpower design techniques based on emerging memristive technology for hardware security primitives/systems are *** reviewing the state-of-the-art in three highlighted memristive application areas,*** non-volatile memory,memristive reconfigurable logic computing and memristive artificial intelligent computing,their application-level impacts on the novel implementations of secret key generation,crypto functions and machine learning attacks are explored,*** the low-power security applications in IoT,it is essential to understand how to best realize cryptographic circuitry using memristive circuitries,and to assess the implications of memristive crypto implementations on security and to develop novel computing paradigms that will enhance their *** review article aims to help researchers to explore security solutions,to analyze new possible threats and to develop corresponding protections for the secure hardware systems based on low-cost memristive circuit designs.

关键词： Memristive technology nanoelectronic device Low-power consumption Miniaturization Nonvolatility Reconfigurability In memory computing Artificial intelligence Hardware security primitives Machine learning-related attacks and defenses

QCA with reversible arithmetic and logic unit for nanoelectronics applications

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International Journal of Intelligent Computing and Cybernetics 2023年第1期16卷 139-157页

作者： Gade Mary Swarna Latha S.Rooban ECE Koneru Lakshmaiah Education FoundationGunturIndia and ECEInstitute of Aeronautical EngineeringHyderabadIndia ECE Koneru Lakshmaiah Education FoundationGunturIndia

Purpose-In this research work,brief quantum-dot cellular automata(QCA)concepts are discussed through arithmetic and logic *** work is most useful for nanoelectronic applications,VLSI industry mainly depends on this type of fault-tolerant QCA based arithmetic logic unit(ALU)*** ALU design is mainly depending on set instructions and rules;these are maintained through low-power ultra-functional tricks only possible with QCA-based reversible arithmetic and logic unit for *** main objective of this investigation is to design an ultra-low power and ultra-high-speed ALU design with QCA *** following QCA method has been implemented through reversible ***/methodology/approach-QCA logic is the main and critical condition for realizing NANO-scale design that delivers considerably fast integrate module,effective performable computation and is less energy efficiency at the nano-scale(QCA).Processors need an ALU in order to process and calculate *** ALU in QCA technology utilizing reverse logic is the primary objective of this *** are now two sections,*** ALU(RAU),logical(LAU)and arithmetical(RAU).Findings-A reversible 231 multiplexer based on the Fredkin gate(FRG)was developed to allow users to choose between arithmetic and logical *** full adders are also implemented to improve arithmetic operations’*** ALU is built using reversible logic gates that are ***/value-In contrast to earlier research,the suggested reversible multilayeredALU with reversible QCA operation is *** 8-and 16-bit ALU,as well as logical unit functioning,is designed through fewer gates,constant inputs and *** implementation is designed on the Mentor Graphics QCA tool and verifies all functionalities.

关键词： ALU QCA Fault tolerance Reversible logic

The fabrication and application of Ni-DNA nanowire-based nanoelectronic devices

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Nano Research 2019年第6期12卷 1293-1300页

作者： Pang-Chia Chang Chia-Yu Chang Wen-Bin Jian Chiun-Jye Yuan Yu-Chang Chen Chia-Ching Chang Department of Electrophysics "National Chiao Tung University"Hsinchu 30010TaiwanChina Department of Biological Science and Technology "National Chiao Tung University"Hsinchu 30068TaiwanChina Center for Intelligent Drug systems and Smart Bio-devices(IDS^2B) "National Chiao Tung University"Hsinchu 30068TaiwanChina institute of Physics "Academia Sinica"Taipei 11529TaiwanChina

DNA is a self-assembled,double stranded natural molecule that can chelate and align nickel ions between its base *** fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful,as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect,a property unique to mem-elements (1).The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2).The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3).As such,the development of Ni-DNA nanowire device-based circuits in the near future is proposed.

关键词： DNA-guided nickel ion chain (Ni-DNA) negative differential resistance (NDR) memristive systemmem capacitive system nanowire

A Hybrid Biofuel and Triboelectric Nanogenerator for Bioenergy Harvesting

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Nano-micro Letters 2020年第4期12卷 53-64页

作者： Hu Li Xiao Zhang Luming Zhao Dongjie Jiang Lingling Xu Zhuo Liu Yuxiang Wu Kuan Hu Ming‑Rong Zhang Jiangxue Wang Yubo Fan Zhou Li Beijing Advanced Innovation Centre for Biomedical Engineering Key Laboratory for Biomechanics and Mechanobiology of Chinese Education MinistrySchool of Biological Science and Medical EngineeringBeihang UniversityBeijing 100083People’s Republic of China CAS Center for Excellence in Nanoscience Beijing Key Laboratory of Micro‑Nano Energy and SensorBeijing Institute of Nanoenergy and NanosystemsChinese Academy of SciencesBeijing 100083People’s Republic of China School of Nanoscience and Technology University of Chinese Academy of SciencesBeijing 100049People’s Republic of China School of Physical Education Jianghan UniversityWuhan 430056People’s Republic of China Center on Nanoenergy Research School of Physical Science and TechnologyGuangxi UniversityNanning 530004People’s Republic of China Department of Radiopharmaceuticals Development National Institute of Radiological SciencesNational Institutes for Quantum and Radiological Science and TechnologyChiba 263‑8555Japan

Various types of energy exist everywhere around us,and these energies can be harvested from multiple sources to power micro-/nanoelectronic system and even personal electronic *** this work,we proposed a hybrid energy-harvesting system(HEHS)for potential in vivo *** HEHS consisted of a triboelectric nanogenerator and a glucose fuel cell for simultaneously harvesting biomechanical energy and biochemical energy in simulated body *** two energy-harvesting units can work individually as a single power source or work simultaneously as an integrated *** design strengthened the flexibility of harvesting multiple energies and enhanced corresponding electric *** with any individual device,the integrated HEHS outputs a superimposed current and has a faster charging *** the harvested energy,HEHS can power a calculator or a green light-emitting diode *** the widely existed biomechanical energy and glucose molecules in the body,the developed HEHS can be a promising candidate for building in vivo self-powered healthcare monitoring system.

关键词： Self-powered Triboelectric nanogenerator Glucose fuel cell Hybrid energy harvester Bioenergy

Scalable Electrophysiology of Millimeter-Scale Animals with Electrode Devices

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Biomedical Engineering Frontiers 2023年第1期4卷 3-20页

作者： Kairu Dong Wen-Che Liu Yuyan Su Yidan Lyu Hao Huang Nenggan Zheng John A.Rogers Kewang Nan College of Pharmaceutical Sciences Zhejiang UniversityHangzhou 310058China National Key Laboratory of Advanced Drug Delivery and Release systems Zhejiang UniversityHangzhou 310058China College of Biomedical Engineering&Instrument Science Zhejiang UniversityHangzhou310027China Department of Gastroenterology Brigham and Women’s HospitalHarvard Medical SchoolBostonMA 02115USA College of Chemical and Biological Engineering Zhejiang UniversityHangzhou 310058China Qiushi Academy for Advanced Studies Zhejiang UniversityHangzhou 310027China College of Computer Science and Technology Zhejiang UniversityHangzhou 310027China State Key Lab of Brain-Machine Intelligence Zhejiang UniversityHangzhou 310058China CCAI by MOE and Zhejiang Provincial Government(ZJU) Hangzhou 310027China Querrey Simpson institute for Bioelectronics Northwestern UniversityEvanstonIL 60208USA Department of Biomedical Engineering Northwestern UniversityEvanstonIL 60208USA Department of Materials Science and Engineering Northwestern UniversityEvanstonIL 60208USA Department of Mechanical Engineering Northwestern UniversityEvanstonIL 60208USA Jinhua institute of Zhejiang University Jinhua 321299China

Millimeter-scale animals such as Caenorhabditis elegans,Drosophila larvae,zebrafish,and bees serve as powerful model organisms in the fields of neurobiology and *** methods exist for recording large-scale electrophysiological signals from these *** approaches often lack,however,real-time,uninterrupted investigations due to their rigid constructs,geometric constraints,and mechanical mismatch in integration with soft *** recent research establishes the foundations for 3-dimensional flexible bioelectronic interfaces that incorporate microfabricated components and nanoelectronic function with adjustable mechanical properties and multidimensional variability,offering unique capabilities for chronic,stable interrogation and stimulation of millimeter-scale animals and miniature tissue *** review summarizes the most advanced technologies for electrophysiological studies,based on methods of 3-dimensional flexible bioelectronics.A concluding section addresses the challenges of these devices in achieving freestanding,robust,and multifunctional biointerfaces.

关键词： offering recording millimeter

On-surface synthesis and edge states of NBN-doped zigzag graphene nanoribbons

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Nano Research 2023年第7期16卷 10436-10442页

作者： Xiao Chang Li Huang Yixuan Gao Yubin Fu Ji Ma Huan Yang Junzhi Liu Xiaoshuai Fu Xiao Lin Xinliang Feng Shixuan Du Hong-Jun Gao University of Chinese Academy of Sciences Beijing 100190China Beijing National Center for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Center for Advancing Electronics Dresden(CfAED)and Faculty of Chemistry and Food Chemistry Technische Universität DresdenDresden D-01069Germany Max Planck institute of microstructure Physics Weinberg 2Halle 06120Germany Department of Chemistry State Key Laboratory of Synthetic ChemistryThe University of Hong KongHong Kong 999077China Songshan Lake Materials Laboratory Dongguan 523808China

Zigzag graphene nanoribbons(ZGNRs)with spin-polarized edge states have potential applications in carbon-based *** electronic structure of ZGNRs can be effectively tuned by different widths or dopants,which requires delicately designed ***,we report the successful synthesis of ZGNR with a width of eight carbon zigzag lines and nitrogen-boronnitrogen(NBN)motifs decorated along the zigzag edges(NBN-8-ZGNR)on Au(111)surface,which starts from a specially designed U-shaped monomer with preinstalled NBN units at the zigzag ***-bond-resolved non-contact atomic force microscopy(nc-AFM)imaging confirms the zigzag-terminated edges and the existence of NBN *** electronic states distributed along the zigzag edges have been revealed after a silicon-layer intercalation at the interface of NBN-8-ZGNR and Au(111).Our work enriches the ZGNR family with a new dopant and larger width,which provides more candidates for future carbonbased nanoelectronic and spintronic applications.

关键词： zigzag graphene nanoribbons nitrogen-boron-nitrogen(NBN)dopant edge states scanning tunneling microscopy(STM) non-contact atomic force microscopy(nc-AFM) density functional theory(DFT)calculations

VLS和VSS生长机制调控的单层TMD中的反向掺杂分布

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Science China Materials 2023年第12期66卷 4723-4732页

作者：田闯肖润涵隋妍萍冯钰涵王浩敏赵孙文刘家文高秀丽孙浩彭松昂金智刘新宇王爽李湃于广辉 State Key Laboratory of Integrated Circuit Materials Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China institute of microelectronics of the Chinese Academy of Sciences Beijing 100049China

掺杂是改善过渡金属二硫族化合物(TMD)单层薄膜性能的重要方法.然而,现有的研究大多集中在掺杂能力上,对掺杂分布的研究还处于起步阶段.近年来,基于旋涂化学气相沉积法研究了掺杂原子空间掺杂分布的差异.这些掺杂的TMD大多是通过气-液-... 详细信息

掺杂是改善过渡金属二硫族化合物(TMD)单层薄膜性能的重要方法.然而,现有的研究大多集中在掺杂能力上,对掺杂分布的研究还处于起步阶段.近年来,基于旋涂化学气相沉积法研究了掺杂原子空间掺杂分布的差异.这些掺杂的TMD大多是通过气-液-固(VLS)生长机制生长的.采用气-固-固(VSS)生长机制生长的TMD尚未被用来深入研究掺杂分布.本文采用Na_(2)WO_(4),NaVO_(3),NaOH(Na-Pre),(NH_(4))_(2)WO_(4),NH_(4)VO_(3)(NH_(4)-Pre)等前驱体合成V–WS_(2).观察到中心和边缘区域完全相反的掺杂分布.还观察到浓度变化较大的界面的出现.通过透射电子显微镜精确地表征了掺杂原子的空间浓度.根据密度泛函理论的计算结果,掺杂分布的差异是由初始态引起的,这与VLS和VSS的生长机制有关.这项工作为控制掺杂原子的分布提供了一种新的方法,对掺杂TMD在微电子和纳米电子器件中的应用具有重要意义.

关键词： transition metal dichalcogenide doping distribution vapor-liquid-solid vapor-solid-solid chemical vapor deposition