检索结果-南通市图书馆

A 10-GS/s 8-bit 2× time interleaved hybrid ADC with λ/4 reference T-Line sharing technique

在线全文

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第8期67卷 351-352页

作者： Zhangming ZHU Jun CHANG Hongzhi LIANG Ruixue DING Shubin LIU institute of integrated circuits Xidian University

With the recent explosion in interactive machine learning and artificial intelligence, the ultra high-speed wireline or optical data links are evaluated as a crucial device that is handling the ever-growing data traffic in high-performance computing environments [1, 2]. In practice, high-order modulation strategies, such as four-level pulse-amplitude modulation(PAM4), enable a significant increase in throughput without raising the baud(Nyquist) rate in transceivers.

关键词： Serpentine

Chipless textile electronics: human body-coupled fiber for wireless energy harvesting and signal transmission

在线全文

学校读者我要写书评

暂无评论

Science China Materials 2024年第7期67卷 2367-2368页

作者： Yixuan Wang Zuqing Yuan Guozhen Shen School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing 100081China

Wearable technology is rapidly advancing through the integration of electronic devices and textiles,enabling intelligent interaction between clothing and the surrounding *** electronics are specifically designed to provide functions such as sensing,computation,display,and ***,traditional wearable devices that rely on rigid von Neumann architectures and incorporate silicon chips face challenges in seamless integration,energy efficiency,and comfort[1–3].Difficulties arise when attempting to integrate complex circuits and electronic components,which are traditionally relied upon for signal modulation,into soft fibers[4,5].Recent reports have begun to explore alternative architectures for wearable devices that can incorporate electronics into a single fiber[6].However,this process presents challenges in simultaneously controlling energy capture and release within a single fiber.

关键词： fiber signal energy

CMOS-level mega-pixel organic camera chips made of photocrosslinked photovoltaic nanocells

在线全文

学校读者我要写书评

暂无评论

Science China Materials 2024年第9期67卷 3043-3045页

作者： Yegang Liang Zhuoran Wang Guozhen Shen School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing100081China

Organic and hybrid optoelectronics have been driving the frontiers in displays,sensing,and energy in recent decades due to their superior performance,low-cost high-yield manufacturing,and new form factor of mechanical flexibility that is promising for lightweight and wearable applications[1-3].However,the inherent vulnerability makes organic semiconductors incompatible with conventional semiconductor microfabrication,posing significant challenges in high density integration to compete with the resolution of conventional image sensors[4].

关键词： frontier driving lightweight

A Fast Startup Crystal Oscillator with Digital SAR-AFC Based Two-Step Injection

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of Electronics 2024年第5期33卷 1147-1153页

作者： Bo ZHOU Yifan LI Zuhang WANG School of integrated circuits and Electronics Beijing Institute of Technology

Crystal oscillators（XOs） provide a high-precision reference frequency but have a long startup time,which severely increases the average power consumption in duty-cycled *** paper proposes a fully-digital low-cost two-step injection technique,by using a successive approximation register（SAR） based auto frequency control（AFC） loop,to speed up the startup behavior of XOs.A theoretical analysis is carried out to determine the optimum injection time and design low-power *** in a 65 nm CMOS process,the proposed 12 MHz fast startup XO occupies an active area of 0.02 mm2and achieves a startup time less than 35 μ*** XO power consumption in the steady state is 40 μW from a 1.0-V supply,with a startup energy of 17.2 nJ.

关键词： Time-frequency analysis Power demand Power measurement Crystals Time measurement Steady-state Registers Crystal oscillator Two-step injection Successive approximation register Auto frequency control Fully-digital Fast startup ENERGY

New structure transistors for advanced technology node CMOS ICs

在线全文

学校读者我要写书评

暂无评论

National Science Review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin integrated Circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for integrated circuits Institute of Microelectronics of Chinese Academy of Sciences School of integrated circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3D stack(3DS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3DS FET

An ultra-deep TSV technique enabled by the dual catalysis-based electroless plating of combined barrier and seed layers

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Microsystems & Nanoengineering 2024年第3期10卷 409-419页

作者： Yuwen Su Yingtao Ding Lei Xiao Ziyue Zhang Yangyang Yan Zhifang Liu Zhiming Chen Huikai Xie School of integrated circuits and Electronics Beijing Institute of TechnologyBeijingChina Chongqing institute of Microelectronics and Microsystems Beijing Institute of TechnologyChongqingChina

Silicon interposers embedded with ultra-deep through-silicon vias(TSVs)are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems(MEMS)*** the cost-effective and reliable manufacturing of ultra-deep TSVs,the formation of continuous barrier and seed layers remains a crucial challenge to ***,we present a novel dual catalysis-based electroless plating(ELP)technique by tailoring polyimide(PI)liner surfaces to fabricate dense combined Ni barrier/seed layers in ultradeep *** additional to the conventional acid catalysis procedure,a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid(PAA)interfacial layer,resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer,particularly at the bottom of the deep *** with depths larger than 500μm and no voids are successfully fabricated in this *** fabrication process involves low costs and *** a fabricated 530-μm-deep TSV with a diameter of 70μm,the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V,respectively,indicating good electrical *** proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

关键词： properties catalysis alkaline

Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Semiconductors 2024年第6期45卷 81-86页

作者： Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu High-Frequency High-Voltage Device and integrated circuits R&D Center Institute of Microelectronics of Chinese Academy of SciencesBe i-jing 100029China School of integrated circuits University of Chinese Academy of SciencesBeijing 100049China Faculty of integrated circuits Xidian UniversityXi’an 710071China

Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)*** fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关键词： AlGaN/GaN heterostructure ultrathin-barrier enhancement-mode radio-frequency power added efficiency silicon substrate

Tuning the ferroelectricity of Hf0.5Zr0.5O2 with alloy electrodes

在线全文

学校读者我要写书评

暂无评论

Science China(Information Sciences) 2024年第8期67卷 321-330页

作者： Keqin LIU Bingjie DANG Zhiyu YANG Teng ZHANG Zhen YANG Jinxuan BAI Zelun PAN Ru HUANG Yuchao YANG Beijing Advanced Innovation Center for integrated circuits School of Integrated Circuits Peking University School of Electronic and Computer Engineering Peking University Center for Brain Inspired Chips Institute for Artificial Intelligence Peking University Center for Brain Inspired Intelligence Chinese Institute for Brain ResearchBeijing

Tuning ferroelectricity of Hf0.5Zr0.5O2is crucial for facilitating its practical applications in various fields, including in-memory and neuromorphic computing. Previous studies have revealed that the electrodes have a significant influence on ferroelectricity, and changing electrode materials can realize different but discrete ferroelectric polarization values. Here, we introduce an alloy-electrode method, in order to achieve gradual and accurate modulation of ferroelectric polarization, especially useful for matching the polarization charges at the interface of ferroelectric insulators and ferroelectric semiconductors. Au and W electrodes are chosen as baselines for realizing weak and strong ferroelectric polarization, where the intermediate states can be achieved by adjusting the ratio of metals in the Au-W alloy. To demonstrate the generality of this approach, the Cu-W alloy electrode is also realized for tuning ferroelectric polarization. The effect of alloy electrodes on device leakage current, endurance, and retention is evaluated. In addition, the temperature stability of ferroelectric capacitors is tested, where limited changes in both remnant polarization and coercive voltages are observed, showing the great potential of the ferroelectric hafnium oxide. Such gradual modulation of ferroelectric polarization could facilitate the application of Hf0.5Zr0.5O2in in-memory and neuromorphic computing.

关键词： ferroelectric hafnium oxide alloy electrode gradual modulation temperature stability

Recent Advance in Synaptic Plasticity Modulation Techniques for Neuromorphic Applications

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Nano-Micro Letters 2024年第10期16卷 403-434页

作者： Yilin Sun Huaipeng Wang Dan Xie School of integrated circuits and Electronics Beijing Institute of TechnologyBeijing 100081People's Republic of China School of integrated circuits Beijing National Research Center for Information Science and Technology(BNRist)Tsinghua UniversityBeijing 100084People's Republic of China

Manipulating the expression of synaptic plasticity of neuromorphic devices provides fascinating opportunities to develop hardware platforms for artifi-cial ***,great efforts have been devoted to exploring biomimetic mechanisms of plasticity simulation in the last few *** progress in various plasticity modulation techniques has pushed the research of synaptic electronics from static plasticity simulation to dynamic plasticity modulation,improving the accuracy of neuromorphic computing and providing strategies for implementing neuromorphic sensing ***,several fascinating strategies for synap-tic plasticity modulation through chemical techniques,device structure design,and physical signal sensing are *** chemical techniques,the underly-ing mechanisms for the modification of functional materials were clarified and its effect on the expression of synaptic plasticity was also *** on device structure design,the reconfigurable operation of neuromorphic devices was well demonstrated to achieve programmable neuromorphic ***,integrating the sensory units with neuromorphic processing circuits paved a new way to achieve human-like intelligent perception under the modulation of physical signals such as light,strain,and ***,considering that the relevant technology is still in the basic exploration stage,some prospects or development suggestions are put forward to promote the development of neuromorphic devices.

关键词： Plasticity modulation Dynamic plasticity Chemical techniques Programmable operation Neuromorphic sensing