检索结果-南通市图书馆

Classification of knowledge graph completeness measurement techniques

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Journal of Systems Engineering and electronics 2024年第1期35卷 154-162页

作者： ZHANG Ying XIAO Gang institute of Systems Engineering Academy of Military SciencesBeijing 100107China

At present,although knowledge graphs have been widely used in various fields such as recommendation systems,question and answer systems,and intelligent search,there are always quality problems such as knowledge omissions and *** assessment and control,as an important means to ensure the quality of knowledge,can make the applications based on knowledge graphs more complete and more accurate by reasonably assessing the knowledge graphs and fixing and improving the quality problems at the same ***,as an indispensable part of the knowledge graph construction process,the results of quality assessment and control determine the usefulness of the knowledge *** them,the assessment and enhancement of completeness,as an important part of the assessment and control phase,determine whether the knowledge graph can fully reflect objective phenomena and reveal potential connections among *** this paper,we review specific techniques of completeness assessment and classify completeness assessment techniques in terms of closed world assumptions,open world assumptions,and partial completeness *** purpose of this paper is to further promote the development of knowledge graph quality control and to lay the foundation for subsequent research on the completeness assessment of knowledge graphs by reviewing and classifying completeness assessment techniques.

关键词： quality assessment completeness assessment closed world assumptions open world assumption partial completeness assumption

The Exchange Attack and the Mixture Differential Attack Revisited: From the Perspective of Automatic Evaluation

在线全文

学校读者我要写书评

暂无评论

Chinese Journal of electronics 2024年第1期33卷 19-29页

作者： Kexin QIAO Zhiyu ZHANG Zhongfeng NIU Liehuang ZHU School of Cyberspace Science and Technology Beijing Institute of Technology State Key Laboratory of Cryptology institute of Information Engineering Chinese Academy of Sciences School of Cryptography University of Chinese Academy of Sciences

Recent results show that the differential properties within quadruples boom as a new inspiration in cryptanalysis of Advanced Encryption Standard(AES)-like constructions. These methods include the exchange attack proposed in Asiacrypt’19, the mixture differential attack proposed in To SC’18, etc., where the essential properties are obtained by manually scrutinizing the structures of the AES-like constructions. This paper presents a novel framework and an automatic tool based on mixed integer linear programming to search for mixture differential distinguishers for general constructions. This framework considers what equality patterns among quadruples can make a distinguisher and traces how the patterns propagate through cipher components with accurate probability *** this tool, a 5-round AES distinguishing attack with lower complexity and more 6-round distinguishing attacks in the chosen plaintext scenarios are deduced. We prove that no exchange-type or mixture differential distinguisher exists for 7 and above rounds AES if the details of the Sbox and Mix Columns matrix are not taken into account.

关键词： Ciphers Estimation Encryption Mixed integer linear programming Complexity theory Standards

Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

CSEE Journal of Power and Energy Systems 2024年第4期10卷 1799-1807页

作者： Han Cao Puqi Ning Yunhao Huang Xuhui Wen Wuhan Second Ship Design and Research institute Wuhan 430205China Key Laboratory of Power electronics and Electric Drive Institute of Electrical EngineeringChinese Academy of SciencesBeijing 100190China institute of Electrical Engineering Chinese Academy of SciencesBeijing 100190China University of Chinese academy of sciences Beijing 100049China Collaborative Innovation Center of Electric Vehicles in Beijing Beijing 100081China

Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new *** paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$*** Section II of the paper,the temperature sensitivity of the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$is *** hardware of the measurement system is set up in Section III,which consists of an On-state Voltage Measurement Circuit(OVMC),the sampling and isolation ***,a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section *** the final Section,the junction temperature is monitored synchronously according to the calibration *** proposed method is applied to a Buck converter and verified by both an Infrared Radiation(IR)camera and a Finite Element Analysis(FEA)tool.

关键词： Junction temperature Silicon Carbide(SiC)MOSFET TSEP

Towards the performance limit of catenary meta-optics via field-driven optimization

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Opto-Electronic Advances 2024年第5期7卷 33-42页

作者： Siran Chen Yingli Ha Fei Zhang Mingbo Pu Hanlin Bao Mingfeng Xu Yinghui Guo Yue Shen Xiaoliang Ma Xiong Li Xiangang Luo National Key Laboratory of Optical Field Manipulation Science and Technology Chinese Academy of SciencesChengdu 610209China State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering Institute of Optics and ElectronicsChinese Academy of SciencesChengdu 610209China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China Research Center on Vector Optical Fields Institute of Optics and ElectronicsChinese Academy of SciencesChengdu 610209China Department of Electrical and Computer Engineering University of California Los Angeles(UCLA)Los AngelesCalifornia 90095USA

Catenary optics enables metasurfaces with higher efficiency and wider bandwidth,and is highly anticipated in the imaging system,super-resolution lithography,and broadband ***,the periodic boundary approximation without considering aperiodic electromagnetic crosstalk poses challenges for catenary optical devices to reach their performance ***,perfect control of both local geometric and propagation phases is realized through field-driven optimization,in which the field distribution is calculated under real boundary *** from other optimization methods requiring a mass of iterations,the proposed design method requires less than ten iterations to get the efficiency close to the optimal *** on the library of shape-optimized catenary structures,centimeter-scale devices can be designed in ten seconds,with the performance improved by ~15%.Furthermore,this method has the ability to extend catenary-like continuous structures to arbitrary polarization,including both linear and elliptical polarizations,which is difficult to achieve with traditional design *** provides a way for the development of catenary optics and serves as a potent tool for constructing high-performance optical devices.

关键词： catenary optics catenary structures field-driven optimization

The energy response of LaBr_(3)(Ce),LaBr_(3)(Ce,Sr),and NaI(Tl)crystals for GECAM

在线全文

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2024年第2期35卷 110-122页

作者： Pei-Yi Feng Xi-Lei Sun Zheng-Hua An Yong Deng Cheng-Er Wang Huang Jiang Jun-Jie Li Da-Li Zhang Xin-Qiao Li Shao-Lin Xiong Chao Zheng Ke Gong Sheng Yang Xiao-Jing Liu Min Gao Xiang-Yang Wen Ya-Qing liu Yan-Bing Xu Xiao-Yun Zhao Jia-Cong Liu Fan Zhang Hong Lu Particle and Astrophysics Center Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China Key Laboratory of Particle Astrophysics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China University of Chinese academy of sciences Chinese Academy of SciencesBeijing 100049China Experimental Physics Center Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China State Key Laboratory of Particle Detection and electronics Institute of High Energy PhysicsChinese Academy of SciencesBeijing 100049China School of Nuclear Science and Technology University of South ChinaHengyang 421001China National Engineering Research Center for Rare Earth Grirem Advanced Materials Co.Ltd.and General Research Institute for Nonferrous MetalsBeijing 100088China

The GECAM series of satellites utilizes LaBr_(3)(Ce),LaBr_(3)(Ce,Sr),and NaI(Tl)crystals as sensitive materials for gamma-ray detectors(GRDs).To investigate the nonlinearity in the detection of low-energy gamma rays and address the errors in the calibration of the E-C relationship,comprehensive tests and comparative studies of the three aforementioned crystals were conducted using Compton electrons,radioactive sources,and mono-energetic *** nonlinearity test results of the Compton electrons and X-rays demonstrated substantial differences,with all three crystals presenting a higher nonlinearity for X/-rays than for Compton *** the LaBr_(3)(Ce)and LaBr_(3)(Ce,Sr)crystals having higher absolute light yields,they exhibited a noticeable nonlinear decrease in the light yield,especially at energies below 400 *** NaI(Tl)crystal demonstrated an"excess"light output in the 6-200 keV range,reaching a maximum"excess"of 9.2%at 30 keV in the X-ray testing and up to 15.5%at 14 keV during Compton electron testing,indicating a significant advantage in the detection of low-energy gamma ***,we explored the underlying causes of the observed nonlinearity in these *** study not only elucidates the detector responses of GECAM,but also initiates a comprehensive investigation of the nonlinearity of domestically produced lanthanum bromide and sodium iodide crystals.

关键词： LaBr_(3)(Ce)detector LaBr_(3)(Ce,Sr)detector NaI(Tl)detector GECAM Energy response Light yield nonlinearity

Emerging materials and transistors for integrated circuits

在线全文

学校读者我要写书评

暂无评论

National Science Review 2024年第3期11卷 7-8页

作者： Ming Liu Lian-Mao Peng Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based electronics School of Electronics Peking University

The device technology for integrated circuits(ICs) has received a great deal of attention in the past decade since the mainstream silicon-based complementary metal-oxide-semiconductor(CMOS) field-effect transistor(FET) for modern ICs had been encountering development bottlenecks due to the combination of power constraints, physics, cost and fabrication processes.

关键词：

Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Nuclear Science and Techniques 2024年第5期35卷 109-121页

作者： Yang Jiao Li-Hua Mo Jin-Hu Yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei Zhao Bo Li You-Mei Sun Pei-Xiong Zhao Jie Liu institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China University of Chinese academy of Science Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China China electronics Technology Group Corporation No.58 Research institute Wuxi 214000China Beijing Microelectronics Technology institute Beijing 100084China institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened ***,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing ***-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node *** range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ***,ground accelerator experiments have mainly obtained low-energy ion irradiation ***,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains *** this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM *** influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was *** findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

关键词： 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) Charge collection Inverse cosine law

ZnSb/Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction for flexible near-infrared photodetector arrays

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2024年第5期45卷 99-105页

作者： Chuqiao Hu Ruiqing Chai Zhongming Wei La Li Guozhen Shen State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronic Engineering University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and electronics Beijing Institute of TechnologyBeijing 100081China

Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)***,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography *** single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals *** polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending ***,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.

关键词： ZnSb nanoplates Ti_(3)C_(2)T_(x)MXene van der Waals heterojunction flexible photodetector image sensing

Manipulating the Macroscopic and Microscopic Morphology of Large-Area Gravure-Printed ZnO Films for High-Performance Flexible Organic Solar Cells

在线全文

学校读者我要写书评

暂无评论

Energy & Environmental Materials 2024年第2期7卷 229-239页

作者： Zhenguo Wang Jingbo Guo Yaqin Pan Jin Fang Chao Gong Lixin Mo Qun Luo Jian Lin Changqi Ma School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China i-Lab&Printable electronics Research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China Beijing Engineering Research Center of Printed electronics Beijing Institute of Graphic CommunicationBeijing 102600China Jiangxi institute of Nanotechnology Chinese Academy of Sciences(CAS)Nanchang 330200China

Gravure printing is a promising large-scale fabrication method for flexible organic solar cells(FOSCs)because it is compatible with two-dimension patternable roll-to-roll ***,the unsuitable rheological property of ZnO nanoinks resulted in unevenness and looseness of the gravure-printed ZnO interfacial *** we propose a strategy to manipulate the macroscopic and microscopic of the gravure-printed ZnO films through using mixed solvent and poly(vinylpyrrolidone)(PVP)*** regulation of drying speed effectively manipulates the droplets fusion and leveling process and eliminates the printing ribbing structure in the macroscopic *** additive of PVP effectively regulates the rheological property and improves the microscopic compactness of the *** this method,large-area ZnO∶PVP films(28×9 cm^(2))with excellent uniformity,compactness,conductivity,and bending durability were *** power conversion efficiencies of FOSCs with gravure-printed AgNWs and ZnO∶PVP films reached 14.34%and 17.07%for the 1 cm^(2)PM6:Y6 and PM6∶L8-BO flexible *** efficiency of 17.07%is the highest value to date for the 1 cm^(2)*** use of mixed solvent and PVP addition also significantly enlarged the printing window of ZnO ink,ensuring high-quality printed thin films with thicknesses varying from 30 to 100 nm.

关键词： flexible organic solar cell gravure printing large-area flexible interfacial layer rheology properties zinc oxide