Online Monitoring Method for Junction Temperature of SiC MOSFETs based on Temperature Sensitive Electrical Parameter

作     者：Han Cao Puqi Ning Yunhao Huang Xuhui Wen 

作者机构：Wuhan Second Ship Design and Research InstituteWuhan 430205China Key Laboratory of Power Electronics and Electric DriveInstitute of Electrical EngineeringChinese Academy of SciencesBeijing 100190China Institute of Electrical EngineeringChinese Academy of SciencesBeijing 100190China University of Chinese Academy of SciencesBeijing 100049China Collaborative Innovation Center of Electric Vehicles in BeijingBeijing 100081China 

出 版 物：《CSEE Journal of Power and Energy Systems》 (中国电机工程学会电力与能源系统学报（英文）)

年 卷 期：2024年第10卷第4期

页      面：1799-1807页

核心收录：

学科分类：080802[工学-电力系统及其自动化] 0808[工学-电气工程] 08[工学] 

基　　金：supported by the National Key R&D Program of China(2016YFB0100600) the Key Program of Bureau of Frontier Sciences and Education,Chinese Academy of Sciences(QYZDBSSW-JSC044) 

主　　题：Junction temperature Silicon Carbide(SiC)MOSFET TSEP 

摘      要：Compared to Si devices,the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new *** paper proposes a practical SiC MOSFET junction temperature monitoring method based on the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$*** Section II of the paper,the temperature sensitivity of the on-state voltage$\\boldsymbol{V}_{\\mathbf{ds}(\\mathbf{on})}$is *** hardware of the measurement system is set up in Section III,which consists of an On-state Voltage Measurement Circuit(OVMC),the sampling and isolation ***,a calibration method based on the self-heating of the SiC MOSFET chip is presented in Section *** the final Section,the junction temperature is monitored synchronously according to the calibration *** proposed method is applied to a Buck converter and verified by both an Infrared Radiation(IR)camera and a Finite Element Analysis(FEA)tool.