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Anisotropic Spin Cluster as a Qubit

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Communications in Theoretical Physics 2007年第7期48卷 90-92页

作者： YAN Xiao-Bo WANG Ming-Ji electronic Science institute,Daqing Petroleum institute,Daqing 163318,China electronic Science institute Daqing Petroleum Institute

We study an anisotropic spin cluster of 3 spin S=1/2 particles with antiferromagnetic exchange interactionwith non-uniform coupling constants.A time-dependent magnetic field is applied to control the time evolution of *** is well known that for an odd number of sites a spin cluster qubit can be defined in terms of the ground *** universal one-qubit logic gate can be constructed from the time evolution operator of the non-autonomousmany-body system,and the six basic one-qubit gates can be realized by adjusting the applied time-dependent magneticfield.

关键词： algebraic dynamics anisotropic spin cluster universal one-qubit logic gate

The robustness of sparse network under limited attack capacity

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Chinese Physics B 2017年第8期26卷 577-586页

作者：王小娟宋梅金磊王珍 electronic Engineering institute Beijing University of Posts and TelecommunicationsBeijing 100876China electronic Engineering institute of PLA Hefei 230000China

The paper studies the robustness of the network in terms of the network structure. We define a strongly dominated relation between nodes and then we use the relation to merge the network. Based on that, we design a dominated clustering algorithm aiming at finding the critical nodes in the network. Furthermore, this merging process is lossless which means the original structure of the network is kept. In order to realize the visulization of the network, we also apply the lossy consolidation to the network based on detection of the community structures. Simulation results show that compared with six existed centrality algorithms, our algorithm performs better when the attack capacity is limited. The simulations also illustrate our algorithm does better in assortative scale-free networks.

关键词： robustness dominated relation merge lossless

A novel charge pump drive circuit for power MOSFETs

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Journal of Semiconductors 2010年第4期31卷 99-103页

作者：王松林周波叶强王辉郭王瑞 School of Mechano-electronic Engineering Xidian University institute of electronic CAD Xidian University

Novel improved power metal oxide semiconductor field effect transistor （MOSFET） drive circuits are introduced. An anti-deadlock block is used in the P-channel power MOSFET drive circuit to avoid deadlocks and improve the transient response. An additional charging path is added to the N-channel power MOSFET drive circuit to enhance its drive capability and improve the transient response. The entire circuit is designed in a 0.6μm BCD process and simulated with Cadence Spectre. Compared with traditional power MOSFET drive circuits, the simulation results show that improved P-channel power MOSFET drive circuit makes the rise time reduced from 60 to 14 ns, the fall time reduced from 240 to 30 ns, and its power dissipation reduced from 2 to 1 mW, while the improved N-channel power MOSFET drive circuit makes the rise time reduced from 360 to 27 ns and its power dissipation reduced from 1.1 to 0.8 mW.

关键词： charge pump drive circuit power MOSFET transient response

Wald tests for signal detection when uncertainty exists in a target's spatial-temporal steering vector

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Science China(Information Sciences) 2020年第8期63卷 266-268页

作者： Weijian LIU Jingjing LI Pengxun WANG Xiufeng ZHA Yong-Liang WANG Wuhan electronic Information institute

Dear editor,Multichannel signal detection is a basic problem in signal processing, especially in radar systems [1–3].In the real world, the signal steering vector is affected by unadjusted array gain-phase error, maneuverable flight, accelerating flight of a target,and other factors that introduce uncertainties [4].These uncertainties can be largely alleviated in

关键词： Adaptive detection generalized direction detection multichannel signal detection Wald test signal mismatch

Magnetoelectric gradient structures: Properties and applications

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Journal of Advanced Dielectrics 2022年第4期12卷 24-29页

作者： A.O.Nikitin V.A.Kiselev V.A.Misilin Yu V.Kiliba R.V.Petrov institute of electronic and informative systems Novgorod State UniversityNo.41B.St.Petersburgskaya Str.Veliky Novgorod 173003Russia

This paper is devoted to a comprehensive study on a new type of microwave structures named magnetoelectric(ME)gradient *** structures are studied in this paper to understand the possibilities and application principles in feasible *** structure under study was calculated at different values of the applied electric field and different values of the relative per-mittivity of the artificial dielectric *** layered multiferroic structure in inhomogeneous electric and magnetic fields was calculated on the basis of the previously proposed mathematical *** eigenwaves spectrum for several considered cases was the result of the performed *** concept of using ME gradient structures in the design of electronically controlled microwave devices is formed on the basis of the results of a numerical *** of this type will preferably be used in electronically controlled devices for the directional transmission of microwave signals,as it was shown in the theoretical part of the paper.

关键词： Composite structures multiferroics magnetoelectric gradient structures artificial dielectric eigenwave spectrum

A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

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Journal of Semiconductors 2015年第12期36卷 124-127页

作者：戈勤陶洪琪余旭明 Nanjing electronic Devices institute

This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.

关键词： wideband MMIC GaAs pHEMT power amplifier high efficiency

Dual-band and polarization-insensitive terahertz absorber based on fractal Koch curves

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Chinese Physics B 2014年第5期23卷 594-599页

作者：马岩冰张怀武李元勋王艺程赖伟恩李颉 State Key Laboratory of electronic Films and Integrated Devices University of Electronic Science and Technology of China institute of electronic and Information Engineering University of Electronic Science and Technology of China

We report the design, fabrication, and characterization of a dual-band and polarization-insensitive metamaterial ab-sorber （MA）, which consists of periodically arranged fractal Koch curves acting as the top resonator array and a metallic ground plane separated by a dielectric spacer. Compared with conventional MAs, a more compact size and multi-frequency operation are achieved by using fractal geometry as the unit cell of the MA. Both the effective medium theory and the multi- reflection interference theory are employed to investigate the underlying physical mechanism of the proposed terahertz MA, and results indicate that the latter theory is not suitable for explaining the absorption mechanism in our investigated struc-ture. Two absorption peaks are observed at 0.226 THz and 0.622 THz with absorptivities of 91.3% and 95.6% respectively and good agreements between the full-wave simulation and experimental results are achieved.

关键词： metamaterial absorber terahertz fractal geometry

An overview of ML-based applications for next generation optical networks

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Science China(Information Sciences) 2020年第6期63卷 31-46页

作者： Ruoxuan GAO Lei LIU Xiaomin LIU Huazhi LUN Lilin YI Weisheng HU Qunbi ZHUGE Shanghai institute for Advanced Communication and Data Science State Key Laboratory of Advanced Optical Communication Systems and NetworksDepartment of Electronic Engineering Shanghai Jiao Tong University

Over the past few decades, the demand for the capacity and reliability of optical networks has continued to grow. In the meantime, optical networks with larger knowledge scales have become sources of numerous heterogeneous data. In order to handle these new challenges, many issues need to be resolved,among which the low-margin optical networks design, power optimization, routing and wavelength assignment(RWA), failure management are quite important. However, the use of traditional algorithms in the above four applications shows some shortcomings. Fortunately, artificial intelligence(AI), especially machine learning(ML), is regarded as one of the most promising methods to overcome these shortcomings. In this study, we review the applications of ML methods in solving these four issues. Although many ML-based researches have emerged, the applications of ML techniques in optical networks still face challenges. Therefore, we also discuss some possible future directions of investigating ML-based approaches in optical networks.

关键词： optical networks artificial intelligence machine learning system margin power optimization routing and wavelength assignment failure management

Dirac spin-gapless semiconductors:promising platforms for massless and dissipationless spintronics and new(quantum) anomalous spin Hall effects

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National Science Review 2017年第2期4卷 252-257页

作者： Xiao-Lin Wang Spintronic and electronic Materials Group Institute for Superconducting and Electronic MaterialsAustralian Institute for Innovative MaterialsUniversity of Wollongong

It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall efects that consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall efect measurements, but with vanishing Hall voltage. hese new Hall efects can be classiied as(quantum) anomalous spin Hall efects. he physics for massless and dissipationless spintronics and the new spin Hall efects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic-type spin-gapless semiconductors are proposed in ferromagnetic monolayers of simple oxides with either honeycomb or square latices.

关键词： spintronics spin-gapless materials spin Hall efects