A 1.8–3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

作     者：戈勤 陶洪琪 余旭明 

作者机构：Nanjing Electronic Devices Institute 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2015年第36卷第12期

页      面：124-127页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：wideband MMIC GaAs pHEMT power amplifier high efficiency 

摘      要：This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.