检索结果-南通市图书馆

Rational design of AgGaS/ZnS/ZnS quantum dots with a near-unity photoluminescence quantum yield via double shelling scheme

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Journal of Materials Science & Technology 2024年第2期169卷 235-242页

作者： H.X.Lu H.Liu Z.Z.Fu Y.Y.Chen H.Q.Dai Z.Hu W.L.Zhang R.Q.Guo institute for Electric Light Sources School of Information Science and TechnologyFudan UniversityShanghai 200433China institute of Future lighting Academy for Engineering and TechnologyFudan UniversityShanghai 200433China Yiwu Research institute of Fudan University YiwuZhejiang 322000China Zhongshan-Fudan Joint Innovation Center Zhongshan 528437China

In this study,a two-step method was used to synthesize highly luminescent AgGaS/ZnS/ZnS quantum dots(QDs).In the first step,an inner ZnS shell was formed via a one-pot method,which resulted in a smaller lattice mismatch between the AgGaS core and the outer ZnS shell,thereby facilitating the formation of a thick outer *** the two-step shelling process,the synthesized AgGaS/ZnS/ZnS QDs showed an excellent photoluminescence quantum yield(PLQY)of 96.4%with a peak wavelength of 508 nm,repre-senting the highest PLQY reported thus far for AgGaS ***,the effect of halogen ions in Zn precursors on the shelling process was *** was proposed that the capacity of halogen ions to coordinate with the QDs influenced the balance between Zn cation diffusion and ZnS shelling ***,the ZnS shelling reaction was dominant when ZnCl_(2)was employed,while Zn cation diffusion was the dominant process under the I^(−)-rich *** work provides insights into the interfacial restructuring during the ZnS shelling and offers a clear map for the tailored synthesis of core/shell QDs.

关键词： AgGaS Quantum dots Photoluminescence Core/shell Alloyed core/shell interface

Self-polarized RGB device realized by semipolar micro-LEDs and perovskite-in-polymer films for backlight applications

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Opto-Electronic Advances 2024年第3期7卷 35-49页

作者： Tingwei Lu Yue Lin Tianqi Zhang Yue Huang Xiaotong Fan Shouqiang Lai Yijun Lu Hao-Chung Kuo Zhong Chen Tingzhu Wu Rong Zhang School of Electronic Science and Engineering Fujian Engineering Research Center for Solid-State LightingXiamen UniversityXiamen 361005China Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM) Xiamen 361005China Department of Photonics and Graduate institute of Electro-Optical Engineering College of Electrical and Computer EngineeringYang Ming Chiao Tung UniversityHsinchu 30010China Semiconductor Research Center Hon Hai Research InstituteTaipei 11492China.

In backlighting systems for liquid crystal displays,conventional red,green,and blue(RGB)light sources that lack polarization properties can result in a significant optical loss of up to 50%when passing through a *** address this inefficiency and optimize energy utilization,this study presents a high-performance device designed for RGB polarized *** device employs an array of semipolar blueμLEDs with inherent polarization capabilities,coupled with mechanically stretched films of green-emitting CsPbBr3 nanorods and red-emitting CsPbI3-Cs4PbI6 hybrid *** CsPbBr3 nanorods in the polymer film offer intrinsic polarization emission,while the aligned-wire structures formed by the stable CsPbI3-Cs4PbI6 hybrid nanocrystals contribute to substantial anisotropic emissions,due to their high dielectric *** resulting device achieved RGB polarization degrees of 0.26,0.48,and 0.38,respectively,and exhibited a broad color gamut,reaching 137.2%of the NTSC standard and 102.5%of the Rec.2020 *** compared to a device utilizing c-plane LEDs for excitation,the current approach increased the intensity of light transmitted through the polarizer by 73.6%.This novel fabrication approach for polarized devices containing RGB components holds considerable promise for advancing next-generation display technologies.

关键词： halide perovskite light-emitting-diodes polarized emission nanocrystals stability

Break of thermal equilibrium between optical and acoustic phonon branches of CsPbI_(3)under continuous-wave light excitation and cryogenic temperature

在线全文

学校读者我要写书评

暂无评论

Chinese Chemical Letters 2024年第7期35卷 534-537页

作者： Rongliang Deng Yihang Chen Xiaotong Fan Guolong Chen Shuli Wang Changzhi Yu Xiao Yang Tingzhu Wu Zhong Chen Yue Lin Department of Electronic Science Fujian Engineering Research Center for Solid-State LightingXiamen UniversityXiamen 361005China Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province(IKKEM) Xiamen 361102China institute of Electromagnetics and Acoustics School of Electronic Science and EngineeringXiamen UniversityXiamen 361005China

The kinetic of low-temperature carrier and lattice of lead-halide perovskite is yet to be fully *** this work,we investigate the steady-state photoluminescences(PLs)of CsPbI_(3)at the environmental temperature(Te)ranging from 20 K to 300 K,and observed anomalous behaviors at cryogenic temperatures:The carrier temperature(Tc)of pure CsPbI_(3)exhibits a negative correlation with Te,accompanied by an expansion in Urbach tails of absorption spectra(Abs.)and excessive red-shifts at peak energy of *** phenomena are also observed in those samples containing a certain amount of Cs_(4)PbI_(6),but to a lesser extent and occurs at lower *** is attributed to the intensified hot phonon bottleneck effect(HPB)in CsPbI_(3)at cryogenic Te,which hinders the energy transfer from hot carriers,via longitudinal optics(LO)phonons to longitudinal acoustic(LA)phonons,to the *** samples under continuous-wave laser excitation,in specific,the barrier induced by the enhanced HPB at low Teprevents the effective thermalization among carriers,LO and LA phonons,which,therefore,form thermally isolated ensembles with different *** cryogenic Terange,the elevated temperatures of carrier and LO phonon expand the high-energy side of PLs and the low-energy tail of Abs.,*** those samples in which the CsPbI_(3)is mixed with Cs_(4)PbI_(6),the interfacial LO-LO interaction across them provides a bypass for heat dissipation,mitigating the heat accumulation in LO-phonons of CsPbI_(3).The results suggest that a strong HPB effect may break the thermal equilibrium among different branches of phonons in the lattice under certain extreme conditions.

关键词： CsPbI_(3) Cs_(4)PbI_(6) Low-temperature carrier Lattice kinetic Hot phonon bottleneck effect Interfacial LO-LO interaction

Impact of oxygen incorporation on interface optimization and defect suppression for efficiency enhancement in Cu_(2)ZnSn(S,Se)_(4)solar cells

在线全文

学校读者我要写书评

暂无评论

Journal of Energy Chemistry 2024年第8期95卷 77-85,I0003页

作者： Shicheng Deng Songfan Wang Yuanyuan Wang Qian Xiao Yuena Meng Dongxing Kou Wenhui Zhou Zhengji Zhou Zhi Zheng Sixin Wu Key Laboratory for Special Functional Materials of MOE National&Local Joint Engineering Research Centre for High-efficiency Display and Lighting TechnologySchool of MaterialsHenan UniversityKaifeng 475004HenanChina Key Laboratory of Micro-Nano Materials for Energy Storage and Conversion of Henan Province Institute of Surface Micro and Nano MaterialsCollege of Chemical and Materials EngineeringXuchang UniversityXuchang 461000HenanChina

Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells suffer from severe carrier recombination,limiting the photovoltaic *** energy band alignment at the p-n junction and defective front interface are two main ***,oxygen incorporation in CZTSSe via absorber air-annealing was developed as a strategy to optimize its surface photoelectric property and reduce the *** optimized oxygen incorporation conditions,the carrier separation and collection behavior at the front interface of the device is *** particular,it is found that oxygen incorporated absorber exhibits increased band bending,larger depletion region width,and suppressed absorber *** indicate the dynamic factors for carrier separation become ***,the increased potential difference between grain boundaries and intra grains combined with the decreased concentration of interface deep level defect in the absorber provide a better path for carrier *** a consequence,the champion efficiency of CZTSSe solar cells has been improved from 9.74%to 12.04%with significantly improved open-circuit voltage after optimized air-annealing *** work provides a new insight for interface engineering to improve the photoelectric conversion efficiency of CZTSSe devices.

关键词： Kesterite Thin film solar cell Interface optimization Surface oxidation Defect suppression

Nanoscale cathodoluminescence spectroscopy probing the nitride quantum wells in an electron microscope

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2024年第3期33卷 144-149页

作者：刘哲彤刘秉尧梁冬冬李晓梅李晓敏陈莉朱瑞徐军魏同波白雪冬高鹏 Electron Microscopy Laboratory School of PhysicsPeking UniversityBeijing 100871China Academy for Advanced Interdisciplinary Studies Peking UniversityBeijing 100871China Research and Development Center for Semiconductor lighting Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China International Center for Quantum Materials Peking UniversityBeijing 100871China

To gain further understanding of the luminescence properties of multiquantum wells and the factors affecting them on a microscopic level,cathodoluminescence combined with scanning transmission electron microscopy and spectroscopy was used to measure the luminescence of In_(0.15)Ga_(0.85)N five-period multiquantum *** lattice-composition-energy relationship was established with the help of energy-dispersive x-ray spectroscopy,and the bandgaps of In_(0.15)Ga_(0.85)N and GaN in multiple quantum wells were extracted by electron energy loss spectroscopy to understand the features of cathodoluminescence *** luminescence differences between different periods of multiquantum wells and the effects of defects such as composition fluctuation and dislocations on the luminescence of multiple quantum wells were *** study establishing the direct relationship between the atomic structure of In_(x)Ga_(1-x)N multiquantum wells and photoelectric properties provides useful information for nitride applications.

关键词： nitride multiquantum wells defect cathodoluminescence scanning transmission electron microscopy

超薄锡掺杂氧化镓结合高k栅介质:硅基兼容的4英寸功率场效应晶体管阵列

在线全文

学校读者我要写书评

暂无评论

Science Bulletin 2024年第12期69卷 1848-1851页

作者：刘子淳李佳诚杨惠霞杨涵黄元张逸韵黎沛涛马远骁王业亮 School of Integrated Circuits and Electronics and Yangtze Delta Region Academy Beijing Institute of TechnologyBeijing 100081China Department of Electrical and Electronic Engineering The University of Hong KongHong Kong 999077China R&D Center for Solid-state lighting Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China

Gallium oxide(Ga_(2)O_(3)),a novel ultrawide-bandgap(UWBG)semiconductor,has attracted considerable attention owing to its large bandgap of up to 4.9 eV,a high breakdown electric field of 8 MV/cm,and a high Baliga's figure of merit exceeding 3000[1,2].These remarkable properties strongly support its potential applications in power electronics,extreme environmentresistance devices,and solar-blind detectors[1–3].

关键词：功率场效应晶体管高k栅介质氧化镓

Deep localization features of photoluminescence in narrow AlGaN quantum wells

在线全文

学校读者我要写书评

暂无评论

Optoelectronics Letters 2024年

作者： DENG Jianyang LI Rui GUO Yanan WANG Junxi WANG Chengxin JI Ziwu School of Integrated Circuits， institute of Novel Semiconductors， Shandong University Research and Development Center for Solid State lighting， institute of Semiconductors， Chinese Academy of Sciences Shandong Inspur Huaguang Optoelectronics Co.， Ltd.

The research prepared two deep ultraviolet (DUV) AlGaN-based multiple quantum well (MQW) samples having same Al content in the QWs but different well widths (3 nm for Sample A and 2 nm for Sample B). Photoluminescence (PL) measurements reveal that， Sample A exhibits only one main PL peak across all measured temperatures， in contrast， Sample B displays one main PL peak at low temperatures and two distinct PL peaks at high temperatures. Furthermore， compared with Sample A， Sample B exhibits a more significant temperature-dependent PL peak wavelength blueshift relative to the Varshni curve， a more significant excitation power density-dependent PL peak blueshift accompanied by linewidth broadening， as well as a larger non-radiative recombination related activation energy and higher internal quantum efficiency (IQE). These findings can be explained by the observation that the narrower well width of Sample B induces a more pronounced effect of carrier localization than the wider well width of Sample A， due to the enhanced fluctuation in well width and reduced quantum-confined Stark effect (QCSE).

关键词：

Tailoring chaotic motion of microcavity photons in ray and wave dynamics by tuning the curvature of space

在线全文

同方期刊数据库

学校读者我要写书评

暂无评论

Science China(Physics,Mechanics & Astronomy) 2024年第7期67卷 107-112页

作者： Wei Lin Yechun Ding Yongsheng Wang Peng Li Yanpeng Zhang Feng Yun Feng Li Key Laboratory for Physical Electronics and Devices of the Ministry of Education Shaanxi Key Lab of Information Photonic TechniqueSchool of Electronic Science and EngineeringFaculty of Electronic and Information EngineeringXi’an Jiaotong UniversityXi’an 710049China Department of Electrical and Photonics Engineering Technical University of DenmarkKgs.Lyngby 2800Denmark Center for Regenerative and Reconstructive Medicine Med-X InstituteThe First Affiliated Hospital of Xi’an Jiaotong UniversityXi’an 710061China Solid-State lighting Engineering Research Center Xi’an Jiaotong UniversityXi’an 710049China

Microcavity photon dynamics in curved space is an emerging interesting area at the crossing point of nanophotonics,chaotic science,and non-Euclidean *** report the sharp difference between the regular and chaotic motions of cavity photons subjected to the varying space *** the island modes of regular motion rise in the phase diagram in the curved space,the chaotic modes show special mechanisms to adapt to the space curvature,including the fast diffusion of ray dynamics,and the localization and hybridization of the Husimi wavepackets among different periodic *** observations are unique effects enabled by the combination of the chaotic trajectory,the wave nature of light,and the non-Euclidean orbital motion,and therefore make the system a versatile optical simulator for chaotic science under quantum mechanics in curved space-time.

关键词： microcavity chaotic motion curved space

Effect of sintering temperature on luminescence properties of borosilicate matrix blue–green emitting color conversion glass ceramics

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2019年第10期28卷 550-555页

作者： Qiao-Yu Zheng Yang Li Wen-Juan Wu Ming-Ming Shi Bo-Bo Yang Jun Zou School of Science Shanghai Institute of TechnologyShanghai 201418China School of Material Science and Engineering Shanghai Institute of TechnologyShanghai 201418China institute of beyond lighting Academy for Engineering and TechnologyFudan UniversityShanghai 200433China institute of New Materials&Industrial Technology Wenzhou UniversityWenzhou 325024China

The color conversion glass ceramics which were made of borosilicate matrix co-doped(SrBaSm)Si2O2N2:(Eu^3+Ce^3+) blue-green phosphors were prepared by two-step method in co-sintering. The change in luminescence properties and the drift of chromaticity coordinates(CIE) of the(SrBaSm)Si2O2N2:(Eu^3+Ce^3+) blue-green phosphors and the color conversion glass ceramics were studied in the sintering temperature range from 600℃ to 800℃. The luminous intensity and internal quantum yield(QY) of the blue-green phosphors and glass ceramics decreased with the sintering temperature increasing. When the sintering temperature increased beyond 750℃, the phosphors and the color conversion glass ceramics almost had no peak in photoluminescence(PL) and excitation(PLE) spectra. The results showed that the blue-green phosphors had poor thermal stability at higher temperature. The lattice structure of the phosphors was destroyed by the glass matrix and the Ce^3+ in the phosphors was oxidized to Ce^4+, which further caused a decrease in luminescent properties of the color conversion glass ceramics.

关键词： (SrBaSm)Si2O2N2:(Eu^3+Ce^3+) phosphors blue-green color conversion glass ceramic luminescent intensity thermal quenching effects sintering temperature