超薄锡掺杂氧化镓结合高k栅介质:硅基兼容的4英寸功率场效应晶体管阵列

作     者：刘子淳 李佳诚 杨惠霞 杨涵 黄元 张逸韵 黎沛涛 马远骁 王业亮 Zi-Chun Liu;Jia-Cheng Li;Hui-Xia Yang;Han Yang;Yuan Huang;Yi-Yun Zhang;Pui-To Lai;Yuan-Xiao Ma;Ye-Liang Wang

作者机构：School of Integrated Circuits and Electronics and Yangtze Delta Region AcademyBeijing Institute of TechnologyBeijing 100081China Department of Electrical and Electronic EngineeringThe University of Hong KongHong Kong 999077China R&D Center for Solid-state LightingInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China 

出 版 物：《Science Bulletin》 (科学通报（英文版）)

年 卷 期：2024年第69卷第12期

页      面：1848-1851页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the National Key R&D Program of China(2023YFB3611700) the National Natural Science Foundation of China(92163206,62101044,12321004) 

主　　题：功率场效应晶体管 高k栅介质 氧化镓 

摘      要：Gallium oxide(Ga_(2)O_(3)),a novel ultrawide-bandgap(UWBG)semiconductor,has attracted considerable attention owing to its large bandgap of up to 4.9 eV,a high breakdown electric field of 8 MV/cm,and a high Baliga s figure of merit exceeding 3000[1,2].These remarkable properties strongly support its potential applications in power electronics,extreme environmentresistance devices,and solar-blind detectors[1–3].