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A flexible Hf_(0.5)Zr_(0.5)O_(2) thin film with highly robust ferroelectricity

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Journal of Materiomics 2024年第1期10卷 210-217页

作者： Xiang Zhou Haoyang Sun Jiachen Li Xinzhe Du He Wang Zhen Luo Zijian Wang Yue Lin Shengchun Shen Yuewei Yin Xiaoguang Li Hefei National Research Center for Physical Sciences at the Microscale Department of Physicsand CAS Key Laboratory of Strongly-Coupled Quantum Matter PhysicsUniversity of Science and Technology of ChinaHefei230026China Collaborative Innovation Center of Advanced Microstructures Nanjing210093China

Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic ***,high-quality flexible Hf_(0.5)Zr_(0.5)O_(2)membranes with robust ferroelectricity were fabricated on inorganic pliable mica substrates via an atomic layer deposition *** flexible Hf_(0.5)Zr_(0.5)O_(2) thin membranes with a thickness of∼8 nm exhibit a high remanent polarization of∼16μC/cm^(2),which possess very robust polarization switching endurance(>10^(10) cycles,two orders of magnitude better than reported flexible HfO_(2)-based films)and superior retention ability(expected>10 years).In particular,stable ferroelectric polarization as well as excellent endurance and retention performance show negligible degradations under 6 mm radius bending conditions or after 10^(4) bending cycles with a 6 mm bending *** results mark a crucial step in the development of flexible hafnium oxide-based ferroelectric memories for wearable electronic devices.

关键词： Ferroelectric polarization Hf_(0.5)Zr_(0.5)O_(2) Flexibility Mica Atomic layer deposition

Fermi level tuning in Sn_(1-x)Pb_(x)Te/Pb heterostructure via changing interface roughness

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Science China(Physics,Mechanics & Astronomy) 2024年第8期67卷 118-125页

作者： Tengteng Liu Zhaoxia Yi Bangjin Xie Weiyan Zheng Dandan Guan Shiyong Wang Hao Zheng Canhua Liu Hao Yang Yaoyi Li Jinfeng Jia Key Laboratory of Artificial Structures and quantum Control(Ministry of Education) Tsung-Dao Lee InstituteSchool of Physics and AstronomyShanghai Jiao Tong UniversityShanghai 200240China Shanghai Research Center for quantum Sciences Shanghai 201315China Hefei National Laboratory Hefei 230088China

Superconducting SnTe-type topological crystalline insulators(TCIs)are predicted to host multiple Majorana zero modes(MZMs)which can coexist in a single *** level(FL)close to the Dirac points of topological surface states is helpful for detecting ***,the TCI SnTe is a heavily p-type semiconductor which is very difficult to modify to n-type via doping or *** this work,we fabricate the atomically flat Sn_(1-x)Pb_(x)Te/Pb heterostructure by molecular beam epitaxy,and make the p-type Sn_(1-x)Pb_(x)Te become n-type through changing the interface *** scanning tunnelling microscope,we find the Dirac points of Sn_(1-x)Pb_(x)Te/Pb heterostructure are always above the FL due to the Fermi level pinning(FLP)induced by topological surface states at atomically flat *** increasing the interface roughness,the FLP effect is suppressed and then the Dirac points of p-type Sn_(1-x)Pb_(x)Te can be tuned very close to or even below the *** work provides a new method for tuning the FL of SnTe-type TCI which has potential application in novel topological superconductor device.

关键词： topological crystalline insulator superconductor heterostructure Fermi level pinning interface roughness

Security of quantum key distribution with virtual mutually unbiased bases

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Science China(Physics,Mechanics & Astronomy) 2024年第7期67卷 13-21页

作者： Hong-Wei Li Chen-Peng Hao Zhi-Jiang Chen Li Gong Yi-Fei Lu Yang Wang Jia-Ji Li Chun-Mei Zhang Rong Wang Zhen-Qiang Yin Qing-Yu Cai Henan Key Laboratory of quantum Information and Cryptography SSF IEUZhengzhou 450000China institute of quantum Information and Technology Nanjing University of Posts and TelecommunicationsNanjing 210003China Department of Physics University of Hong KongHong Kong 999077China Key Laboratory of quantum Information University of Science and Technology of ChinaHefei 230026China School of Information and Communication Engineering Hainan UniversityHaikou 570228China

In a perfect quantum key distribution(QKD)protocol,quantum states should be prepared and measured with mutually unbiased bases(MUBs).However,in a practical QKD system,quantum states are generally prepared and measured with imperfect MUBs using imperfect devices,possibly reducing the secret key rate and transmission *** analyze the security of a QKD system with imperfect MUBs,we propose virtual MUBs to characterize the quantum channel against collective attack,and analyze the corresponding secret key rate under imperfect state preparation and measurement *** generally,we apply the advantage distillation method for analyzing the security of QKD with imperfect MUBs,where the error tolerance and transmission distance can be sharply *** analysis method can be applied to benchmark and standardize a practical QKD system,elucidating the security analysis of different QKD protocols with imperfect devices.

关键词： quantum key distribution mutually unbiased bases advantage distillation

Two‑Dimensional Cr_(5)Te_(8)@Graphite Heterostructure for Efficient Electromagnetic Microwave Absorption

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Nano-Micro Letters 2024年第3期16卷 407-422页

作者： Liyuan Qin Ziyang Guo Shuai Zhao Denan Kong Wei Jiang Ruibin Liu Xijuan Lv Jiadong Zhou Qinghai Shu School of Materials Science and Engineering Beijing Institute of TechnologyBeijing 100081People’s Republic of China Centre for quantum Physics Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement(MOE)School of PhysicsBeijing Institute of TechnologyBeijing 100081People’s Republic of China Advanced Research institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081People’s Republic of China Tangshan Research institute Beijing Institute of TechnologyTangshan 063099People’s Republic of China

Two-dimensional(2D)transition metal chalcogenides(TMCs)hold great promise as novel microwave absorption materials owing to their interlayer interactions and unique magnetoelectric ***,overcoming the impedance mismatch at the low loading is still a challenge for TMCs due to the restricted loss pathways caused by their high-density ***,an interface engineering based on the heterostructure of 2D Cr_(5)Te_(8) and graphite is in situ constructed via a one-step chemical vapor deposit to modulate impedance matching and introduce multiple attenuation ***,the Cr_(5)Te_(8)@EG(ECT)heterostructure exhibits a minimum reflection loss of up to−57.6 dB at 15.4 GHz with a thin thickness of only 1.4 mm under a low filling rate of 10%.The density functional theory calculations confirm that the splendid performance of ECT heterostructure primarily derives from charge redistribution at the abundant intimate interfaces,thereby reinforcing interfacial polarization ***,the ECT coating displays a remarkable radar cross section reduction of 31.9 dB m^(2),demonstrating a great radar microwave scattering *** work sheds light on the interfacial coupled stimulus response mechanism of TMC-based heterogeneous structures and provides a feasible strategy to manipulate high-quality TMCs for excellent microwave absorbers.

关键词： Chemical vapor deposition Interface polarization engineering Cr_(5)Te_(8)-graphite heterojunctions Microwave absorption

Topological magnetoelectric response in ferromagnetic axion insulators

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National Science Review 2024年第2期11卷 8-14页

作者： Yuhao Wan Jiayu Li Qihang Liu Department of Physics and Shenzhen institute for quantum Science and Engineering(SIQSE) Southern University of Science and Technology Shenzhen Key Laboratory of Advanced quantum Functional Materials and Devices Southern University of Science and Technology Guangdong Provincial Key Laboratory for Computational Science and Material Design Southern University of Science and Technology

The topological magnetoelectric effect （TME） is a hallmark response of the topological field theory,which provides a paradigm shift in the study of emergent topological ***,its direct observation is yet to be realized due to the demanding magnetic configuration required to gap all surface ***,we theoretically propose that axion insulators with a simple ferromagnetic configuration,such as the MnBi2Te4/（Bi2Te3）nfamily,provide an ideal playground to realize the *** the designed triangular prism geometry,all the surface states are magnetically *** a vertical electric field,the surface Hall currents give rise to a nearly half-quantized orbital moment,accompanied by a gapless chiral hinge mode circulating in ***,the orbital magnetization from the two topological origins can be easily distinguished by reversing the electric *** work paves the way for direct observation of the TME in realistic axion-insulator materials.

关键词： topological magnetoelectric effect axion insulator magnetic topological materials

Enhanced Sensing Mechanism Based on Shifting an Exceptional Point

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Research 2024年第3期6卷 285-292页

作者： Xuan Mao Guo-Qing Qin Hao Zhang Bo-Yang Wang Dan Long Gui-Qin Li Gui-Lu Long Department of Physics State Key Laboratory of Low-Dimensional Quantum PhysicsTsinghua UniversityBeijing 100084China Beijing institute of Radio Measurement The Second Academy of China Aerospace Science and Industry Corporation(CASIC)Beijing 100854China Purple Mountain Laboratories Nanjing 21111China Frontier Science Center for quantum Information Beijing 100084China Beijing Academy of quantum Information Sciences Beijing 100193China

Non-Hermitian systems associated with exceptional points (EPs) are expected to demonstrate a giant response enhancement for various sensors. The widely investigated enhancement mechanism based on diverging from an EP should destroy the EP and further limits its applications for multiple sensing scenarios in a time sequence. To break the above limit, here, we proposed a new enhanced sensing mechanism based on shifting an EP. Different from the mechanism of diverging from an EP, our scheme is an EP nondemolition and the giant enhancement of response is acquired by a slight shift of the EP along the parameter axis induced by perturbation. The new sensing mechanism can promise the most effective response enhancement for all sensors in the case of multiple sensing in a time sequence. To verify our sensing mechanism, we construct a mass sensor and a gyroscope with concrete physical implementations. Our work will deepen the understanding of EP-based sensing and inspire designing various high-sensitivity sensors in different physical systems.

关键词： mechanism shifting exceptional

Membrane tension evolution and mechanical regulation of melittin-induced membrane poration

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Chinese Physics B 2024年第10期33卷 465-475页

作者： Wanting Zhang Rong Xu Wendong Ma Zhao Lin Kai Yang Bing Yuan Center for Soft Condensed matter Physics and Interdisciplinary Research&School of Physical Science and Technology Soochow UniversitySuzhou 215006China Songshan Lake Materials Laboratory Dongguan 523808China Biomedicine Discovery institute Infection&Immunity ProgramMonash UniversityMelbourneAustralia Beijing National Laboratory for Condensed matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China

Membrane tension plays a crucial role in various fundamental cellular processes,with one notable example being the T cell-mediated elimination of tumor cells through perforin-induced membrane perforation by amplifying cellular ***,the mechanisms governing the regulation of biomolecular activities at the cell interface by membrane tension remain *** this study,we investigated the correlation between membrane tension and poration activity of melittin,a prototypical pore-forming peptide,using dynamic giant unilamellar vesicle leakage assays combined with flickering tension analysis,molecular dynamics simulations,and live cell *** results demonstrate that an increase in membrane tension enhances the activity of melittin,particularly near its critical pore-forming ***,peptide actions such as binding,insertion,and aggregation in the membrane further influence the evolution of membrane *** cell experiments reveal that artificially enhancing membrane tension effectively enhances melittin’s ability to induce pore formation and disrupt membranes,resulting in up to a ten-fold increase in A549 cell mortality when exposed to a concentration of 2.0-μg·mL^(-1)*** findings elucidate the relationship between membrane tension and the mechanism of action as well as pore-forming efficiency of melittin,while providing a practical mechanical approach for regulating functional activity of molecules at the cell-membrane interface.

关键词： membrane tension mechanical regulation membrane poration giant unilamellar vesicle leakage assay

Merger estimates for a disformal Kerr black hole in quadratic degenerate higher-order scalar-tensor theories

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Chinese Physics C 2024年第5期48卷 284-292页

作者：蒋洪鑫杜欣怡潘启沅陈松柏荆继良 Key Laboratory of Low Dimensional quantum Structures and quantum Control of Ministry of Education Synergetic Innovation Center for Quantum Effects and Applicationsand Department of PhysicsHunan Normal UniversityChangsha 410081China institute of Interdisciplinary Studies Hunan Normal UniversityChangsha 410081China Center for Gravitation and Cosmology College of Physical Science and TechnologyYangzhou UniversityYangzhou 225009China

We investigate the main features of a disformal Kerr black hole merger in quadratic degenerate higher-order scalar-tensor *** the ringdown stage of the black hole merger,for the prograde orbit,the real part of the quasinormal modes decreases with an increase in the disformal parameter,and the imaginary part also decreases,except in the Kerr case for a large spin ***,for the retrograde orbit,the real part increases with an increase in the disformal parameter,and the imaginary part always decreases with *** the approximate final spin,regardless of an equal spin,unequal spin,or generic spin configuration merger,the final black hole spin always increases with an increase in the disformal *** results show that the disformal parameter in the disformal Kerr solution and the MOG parameter in the Kerr-MOG case have obviously different effects on the black hole merger,which suggests the differences between these two spacetime structures.

关键词： black hole merger quasinormal modes final black hole spin disformal Kerr black hole quadratic degenerate higher-order scalar-tensor(DHOST)theory

Light-emitting devices based on atomically thin MoSe_(2)

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Journal of Semiconductors 2024年第4期45卷 19-35页

作者： Xinyu Zhang Xuewen Zhang Hanwei Hu Vanessa Li Zhang Weidong Xiao Guangchao Shi Jingyuan Qiao Nan Huang Ting Yu Jingzhi Shang institute of Flexible Electronics Northwestern Polytechnical UniversityXi'an 710129China School of Physics and Technology Wuhan UniversityWuhan 430072China Wuhan institute of quantum Technology Wuhan 430206China

Atomically thin MoSe_(2) layers,as a core member of the transition metal dichalcogenides(TMDs)family,benefit from their appealing properties,including tunable band gaps,high exciton binding energies,and giant oscillator strengths,thus pro-viding an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs),field-effect transistors(FETs),sin-gle-photon emitters(SPEs),and coherent light sources(CLSs).Moreover,these MoSe_(2) layers can realize strong excitonic emis-sion in the near-infrared wavelengths,which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection,quantum computing,and quantum information ***,we overview the state-of-the-art applications of light-emitting devices based on two-dimensional MoSe_(2) ***,we introduce recent developments in excitonic emission features from atomically thin MoSe_(2) and their dependences on typical physical ***,we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe_(2) coupled to the diverse forms of optical ***,we highlight the promising applications of LEDs,SPEs,and CLSs based on MoSe_(2) and their ***,we summarize the challenges and opportunities for high-quality emis-sion of MoSe_(2) and high-performance light-emitting devices.

关键词： MoSe_(2) light-matter interaction exciton polariton light-emitting device