A flexible Hf_(0.5)Zr_(0.5)O_(2) thin film with highly robust ferroelectricity
作者机构：Hefei National Research Center for Physical Sciences at the MicroscaleDepartment of Physicsand CAS Key Laboratory of Strongly-Coupled Quantum Matter PhysicsUniversity of Science and Technology of ChinaHefei230026China Collaborative Innovation Center of Advanced MicrostructuresNanjing210093China
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2024年第10卷第1期
页 面：210-217页
核心收录：
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
基 金：supported by the National Key Research and Development Program of China(2022YFB3807604 and 2019YFA0307900) the National Natural Science Foundation of China(U21A2066,52250281,52125204 and 92163210) the Fundamental Research Funds for the Central Universities(WK2030000035),and this work was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication
主 题：Ferroelectric polarization Hf_(0.5)Zr_(0.5)O_(2) Flexibility Mica Atomic layer deposition
摘 要：Flexible hafnia-based ferroelectric memories are arousing much interest with the ever-growing demands for nonvolatile data storage in wearable electronic ***,high-quality flexible Hf_(0.5)Zr_(0.5)O_(2)membranes with robust ferroelectricity were fabricated on inorganic pliable mica substrates via an atomic layer deposition *** flexible Hf_(0.5)Zr_(0.5)O_(2) thin membranes with a thickness of∼8 nm exhibit a high remanent polarization of∼16μC/cm^(2),which possess very robust polarization switching endurance(10^(10) cycles,two orders of magnitude better than reported flexible HfO_(2)-based films)and superior retention ability(expected10 years).In particular,stable ferroelectric polarization as well as excellent endurance and retention performance show negligible degradations under 6 mm radius bending conditions or after 10^(4) bending cycles with a 6 mm bending *** results mark a crucial step in the development of flexible hafnium oxide-based ferroelectric memories for wearable electronic devices.
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