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microsystems & Nanoengineering 2024年第3期10卷 409-419页

作者： Yuwen Su Yingtao Ding Lei Xiao Ziyue Zhang Yangyang Yan Zhifang Liu Zhiming Chen Huikai Xie School of Integrated Circuits and Electronics Beijing Institute of TechnologyBeijingChina Chongqing institute of microelectronics and microsystems Beijing Institute of TechnologyChongqingChina

Silicon interposers embedded with ultra-deep through-silicon vias(TSVs)are in great demand for the heterogeneous integration and packaging of opto-electronic chiplets and microelectromechanical systems(MEMS)*** the cost-effective and reliable manufacturing of ultra-deep TSVs,the formation of continuous barrier and seed layers remains a crucial challenge to ***,we present a novel dual catalysis-based electroless plating(ELP)technique by tailoring polyimide(PI)liner surfaces to fabricate dense combined Ni barrier/seed layers in ultradeep *** additional to the conventional acid catalysis procedure,a prior catalytic step in an alkaline environment is proposed to hydrolyze the PI surface into a polyamide acid(PAA)interfacial layer,resulting in additional catalysts and the formation of a dense Ni layer that can function as both a barrier layer and a seed layer,particularly at the bottom of the deep *** with depths larger than 500μm and no voids are successfully fabricated in this *** fabrication process involves low costs and *** a fabricated 530-μm-deep TSV with a diameter of 70μm,the measured depletion capacitance and leakage current are approximately 1.3 pF and 1.7 pA at 20 V,respectively,indicating good electrical *** proposed fabrication strategy can provide a cost-effective and feasible solution to the challenge of manufacturing ultra-deep TSVs for modern 3D heterogeneous integration and packaging applications.

关键词： properties catalysis alkaline

Reinforcement Learning Based Quantization Strategy Optimal Assignment Algorithm for Mixed Precision

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Computers, Materials & Continua 2024年第4期79卷 819-836页

作者： Yuejiao Wang Zhong Ma Chaojie Yang Yu Yang Lu Wei Xi’an microelectronics Technology institute Xi’an710065China

The quantization algorithm compresses the original network by reducing the numerical bit width of the model,which improves the computation speed. Because different layers have different redundancy and sensitivity to databit width. Reducing the data bit width will result in a loss of accuracy. Therefore, it is difficult to determinethe optimal bit width for different parts of the network with guaranteed accuracy. Mixed precision quantizationcan effectively reduce the amount of computation while keeping the model accuracy basically unchanged. In thispaper, a hardware-aware mixed precision quantization strategy optimal assignment algorithm adapted to low bitwidth is proposed, and reinforcement learning is used to automatically predict the mixed precision that meets theconstraints of hardware resources. In the state-space design, the standard deviation of weights is used to measurethe distribution difference of data, the execution speed feedback of simulated neural network accelerator inferenceis used as the environment to limit the action space of the agent, and the accuracy of the quantization model afterretraining is used as the reward function to guide the agent to carry out deep reinforcement learning training. Theexperimental results show that the proposed method obtains a suitable model layer-by-layer quantization strategyunder the condition that the computational resources are satisfied, and themodel accuracy is effectively *** proposed method has strong intelligence and certain universality and has strong application potential in thefield of mixed precision quantization and embedded neural network model deployment.

关键词： Mixed precision quantization quantization strategy optimal assignment reinforcement learning neural network model deployment

A Multi-Channel CMOS Analog Front-End Interface IC with 157.8 d B Current Detection Dynamic Range

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Chinese Journal of Electronics 2024年第2期33卷 393-402页

作者： Kunyu WANG Wenjing XU Chengbin ZHANG Yanjun YANG Man-Kay LAW Li ZHOU Jie CHEN Ming CHEN institute of microelectronics of the Chinese Academy of Science University of Chinese Academy of Sciences Zunyi Normal University institute of microelectronics and Dept.of ECE FST University of Macau

A high dynamic range and low-noise CMOS(complementary metal-oxide-semiconductor transistor)front-end interface integrated circuit(IC) with multi-channel detection is presented in this paper. Two different current detection channels, composed of a trans-impedance amplifier(TIA) and an integrator-differentiator TIA, are used to boost the current detection range. A capacitance-coupled instrument amplifier(CCIA) is also included to realize high precision voltage detection. A fourth-order sigma-delta modulator using a second-order loop filter and a second-order noise shaping integral quantizer is adopted to realize effective number of bits above 16 bits. The presented interface IC is implemented in 0.18-μm CMOS process with supply voltage of 3.3 V, and a proto-type electrochemical sensor platform with miniaturized sensor array is developed to verify the functionality of the interface IC. Measurement results indicate that the designed interface IC achieves 157.8 d B current detection dynamic range, and the measured input-referred current noise and voltage noise floor are 1.04 p A and 58.4 n V within 10 k Hz integration bandwidths,respectively.

关键词： Integrated circuits Sigma-delta modulation Semiconductor device measurement Voltage measurement Current measurement Noise Bandwidth

Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

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Journal of Semiconductors 2024年第9期45卷 70-75页

作者： Shijie Pan Shiwei Feng Xuan Li Zixuan Feng Xiaozhuang Lu Kun Bai Yamin Zhang College of microelectronics Beijing University of TechnologyBeijing 100124China institute of microelectronics Chinese Academy of SciencesBeijing 100029China

In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.

关键词： AlGaN/GaN HEMT electron radiation performance degradation device damage

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New structure transistors for advanced technology node CMOS ICs

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National Science Review 2024年第3期11卷 24-41页

作者： Qingzhu Zhang Yongkui Zhang Yanna Luo Huaxiang Yin Integrated Circuit Advanced Process R&D Center Institute of Microelectronics of Chinese Academy of Sciences(IMECAS) State key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Integrated Circuits University of Chinese Academy of Sciences

Over recent decades, advancements in complementary metal-oxide-semiconductor integrated circuits(ICs)have mainly relied on structural innovations in transistors. From planar transistors to the fin field-effect transistor(FinFET) and gate-all-around FET(GAAFET), more gate electrodes have been added to three-dimensional(3D) channels with enhanced control and carrier conductance to provide higher electrostatic integrity and higher operating currents within the same device footprint. Beyond the 1-nm node, Moore's law scaling is no longer expected to be applicable to geometrical shrinkage. Vertical transistor stacking, e.g. in complementary FETs(CFET), 3D stack(3DS) FETs and vertical-channel transistors(VFET), for enhanced density and variable circuit or system design represents a revolutionary scaling approach for sustained IC development. Herein, innovative works on specific structures, key process breakthroughs, shrinking cell sizes and design methodologies for transistor structure research and development are reviewed. Perspectives on future innovations in advanced transistors with new channel materials and operating theories are also discussed.

关键词： transistor CMOS GAAFET CFET 3DS FET

On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication

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Nano Research 2024年第7期17卷 6544-6549页

作者： Zhiman Zhou Kunxuan Liu Di Wu Yunrui Jiang Ranran Zhuo Pei Lin Zhifeng Shi Yongtao Tian Wei Han Longhui Zeng Xinjian Li School of Physics and microelectronics Key Laboratory of Material Physics Ministry of EducationZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCalifornia 92093USA institute of microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China

Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical ***,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV *** limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application ***,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si *** process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV *** device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,***,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are *** work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

关键词： germanium diselenide van der Waals(vdW)integration ultraviolet enhanced broadband photodetection imaging

Realization of Low in-Band Harmonic for Compact 6–18-GHz T/R Module Under TX-Mode Operation

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Chinese Journal of Electronics 2024年第2期33卷 380-384页

作者： Jinming LAI Zhiyou LI Chaojie WANG Hailong WANG Xiaohua MA School of microelectronics Xidian University CETC 29th Research institute

Wideband high power amplifier(PA) with poor harmonic suppression will degrade the performance of the active electronically scanned array(AESA) due to its harmonic products falling into the operating bandwidth of a wideband T/R module. In view of this, a compact reconfigurable harmonic suppress circuit(HSC) is proposed to achieve low in-band harmonic for compact T/R module with multiple octaves under TX-mode operation. The HSC consists of eight microstrip resonant stubs with high impedance and multiple p-i-n switches. By controlling the p-i-n switches, the HSC can work in three states. When six of the used p-i-n switches are “ON” state, the corresponding microstrip resonant stubs are loaded onto the 50 Ω transmission line, which performs a bandstop filter(BSF). For verification, the HSC with bandwidth of 12–15 GHz/15–18 GHz is designed to apply to a 6–18 GHz T/R module. As a result, the second harmonic of 6–9 GHz transmitting signal can be suppressed below 32 d Bc when compared to the PA's fundamental output. While the p-i-n switches are “OFF” state, the HSC is almost the same as a 50 Ω transmission line, which will have a little effect on the 9–18 GHz transmitting signal. The measurement results approximately agree with the calculated results and simulated results, which demonstrate the validity of the proposed HSC.

关键词： Microstrip filters Harmonics suppression Power transmission lines PIN photodiodes Switches Harmonic analysis Transmission line measurements

A High-Resolution Calibration method for Timeto-Digital Converter of Lidar

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Chinese Journal of Electronics 2024年

作者： Ruqing LIU Feng LI Jingguo ZHU Yan JIANG Chenghao JIANG Tao HU institute of microelectronics of the Chinese Academy of Sciences

High-resolution time-to-digital converter(TDC) finds major applications in light detection and rang ing(Lidar) systems as one of the high precision time measuring techniques. In this work, a high-resolution TDC i designed and implemented on a Xilinx FPGA board. For precision time measurements, the proposed TDC uses an in ternal tapped delay chain written in Verilog. The TDC circuit measurement errors are examined and calibrated fol lowing several principles of error reduction techniques to meet the specific demand for the high-precision Lidar range Experiments have shown that the suggested calibration TDC has higher performance, achieving sub 35 ps resolution The design is fully customizable and implemented as a set of separate IP cores. This allows for easy implementation and meets the requirements of the present-day pulse Lidar systems.

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Recent advancements in continuously scalable conversion-ratio switched-capacitor converter

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Journal of Semiconductors 2024年第4期45卷 8-11页

作者： Mo Huang Yuanfei Wang Rui P.Martins Yan Lu State Key Laboratory of Analog and Mixed-Signal VLSI Institute of MicroelectronicsUniversity of MacaoMacaoChina

Switched-capacitor(SC)DC-DC converter[1]is an impor-tant alternative to inductive DC-DC converter,in terms of removing the bulky power ***,it is widely used in low-profile,low-power applications,such as the internet of things(IoT)sensor nodes and energy harvesting[2].Mean-while,considering that capacitor has a much higher energy density than inductor,high-power applications.

关键词： converter switched removing

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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

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Chinese Journal of Electronics 2024年

作者： Yuhao WANG Sen HUANG Qimeng JIANG Xinhua WANG Jie FAN Haibo YIN Ke WEI Yingkui ZHENG Xinyu LIU Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences institute of microelectronics University of Chinese Academy of Sciences

‘Ohmic-before-passivation' process was implemented on ultrathin-barrier(UTB) AlGaN(<6 nm)/GaN heterostructure to further reduce the ohmic contact resistance(Rc). In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNx passivation contributed to restore two-dimensional electron gas(2DEG) in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length(LT) consisted with lower Rc are achieved compared to that of ohmic contact on AlGaN(～20 nm)/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 *** ‘ohmic-before-passivation' process enables the relative stability of ohmic contacts between 50 K to 475 K and significantly improves the DC characteristics of GaN-MIS-HEMTs, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

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