Effects of 1 MeV electron radiation on the AlGaN/GaN high electron mobility transistors

作     者：Shijie Pan Shiwei Feng Xuan Li Zixuan Feng Xiaozhuang Lu Kun Bai Yamin Zhang Shijie Pan;Shiwei Feng;Xuan Li;Zixuan Feng;Xiaozhuang Lu;Kun Bai;Yamin Zhang

作者机构：College of MicroelectronicsBeijing University of TechnologyBeijing 100124China Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2024年第45卷第9期

页      面：70-75页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：supported by the Key Program of the National Natural Science Foundation of China (Grant No. 62334002) the National Natural Science Foundation of China (Grant No. 62174008) 

主　　题：AlGaN/GaN HEMT electron radiation performance degradation device damage 

摘      要：In this study, the effects of 1 MeV electron radiation on the D-mode GaN-based high electron mobility transistors(HEMTs) were investigated after different radiation doses. The changes in electrical properties of the device were obtained, and the related physical mechanisms were analyzed. It indicated that under the radiation dose of 5 × 10^(14) cm^(-2), the channel current cannot be completely pinched off even if the negative gate voltage was lower than the threshold voltage, and the gate leakage current increased significantly. The emission microscopy and scanning electron microscopy were used to determine the damage location. Besides, the radiation dose was adjusted ranging from 5 × 10^(12) to 1 × 10^(14) cm^(-2), and we noticed that the drain-source current increased and the threshold voltage presented slightly negative shift. By calculations, it suggested that the carrier density and electron mobility gradually increased. It provided a reference for the development of device radiation reinforcement technology.