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Effect of Ion Dose on Growth of Relaxed SiGe Layer on Ion Implantation Si Substrate

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Journal of Rare Earths 2004年第Z2期22卷 26-29页

作者： Chen Changchun Liu Zhihong Huang Wentao Dou Weizhi Xiong Xiaoyi Zhang Wei Tsien Peihsin Cao Jianqing inst.tute of microelectronics Tsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Institute of MicroelectronicsTsinghua UniversityBeijing 100084China Shanghai Institute of Applied PhysicsChinese Academy of SciencesShanghai 201800China

Thin strain-relaxed Si0.8Ge0.2 films (57.6 nm) on the 30 keV Ar+ ion implantation Si substrates for different dose (1 × 1014, 5 × 1014, 3 × 1015 cm-2) were grown by ultra high vacuum chemical vapor deposition (UHVCVD) *** backscattering/ion channeling (RBS/C), high resolution X-ray diffraction (HRXRD), Raman spectra as well as atomic force microscopy (AFM) were used to characterize these SiGe films. Investigations by RBS/C as well as HRXRD demonstrate that these thin Sio.8Geo.2 films could indeed epitaxially grow on the Ar+ ion implantation Si substrates. Under low dose ( 1 × 1014 cm-2) and medium dose (5 × 1014 cm-2) implantation conditions, the relaxation extents of SiGe films are 60.6% and 63.6%, respectively. However, high dose implantation (3 × 1015 cm-2) prompt the strain in epitaxial SiGe film to be close to full relaxation status (relaxation extent of 96.6% ). On the other hand, determinations of RBS/C also indicate the crystalline quality of SiGe film grown on high dose implantation Si substrate is nearly identical to that grown on low dose (1 × 1014 cm-2) implantation Si substrate.

关键词： strain relaxation UHVCVD ion implantation SiGe

Micro thermal shear stress sensor based on vacuum anodic bonding and bulk-micromachining

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Chinese Physics B 2008年第6期17卷 2130-2136页

作者：易亮欧毅石莎莉马瑾陈大鹏叶甜春 Silicon Device & Integrated Technology Department Institute of Microelectronics of Chinese Academy of Sciences School of Physics & microelectronics Shandong University

This paper describes a micro thermal shear stress sensor with a cavity underneath, based on vacuum anodic bonding and bulk micromachined technology. A Ti/Pt alloy strip, 2μm×100μm, is deposited on the top of a thin silicon nitride diaphragm and functioned as the thermal sensor element. By using vacuum anodic bonding and bulk-si anisotropic wet etching process inst.ad of the sacrificial-layer technique, a cavity, functioned as the adiabatic vacuum chamber, 200μm×200μm×400μm, is placed between the silicon nitride diaphragm and glass （Corning 7740）. This method totally avoid adhesion problem which is a major issue of the sacrificial-layer technique.

关键词： thermal micro shear stress sensor vacuum anodic bonding bulk-micromachined

vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1Ti0.9O2-δ Films Prepared by Sol-Gel Method

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Chinese Physics Letters 2008年第7期25卷 2638-2641页

作者：刘力锋康晋锋王漪张兴韩汝琦 inst.tute of microelectronics Peking University Beijing 100871

The Co-doped TiO2 films （Co0.1Ti0.9O2-δ） are prepared on silicon substrates by sol-gel method and post annealing. TheCo0.1Ti0.9O2-δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism （RTFM） is observed. Experimental evidences show that the RTFM in the Co0.1Ti0.9O2-δ film may come from the Co-doped TiO2 matrix and is related to the oxygen vacancies created by vacuum annealing.

关键词： the power-law exponents precipitation durative abrupt precipitation change

High-performance solar-blind photodetector arrays constructed from Sn-doped Ga_(2)O_(3)microwires via patterned electrodes

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Nano Research 2022年第8期15卷 7631-7638页

作者： Ya-Cong Lu Zhen-Feng Zhang Xun Yang Gao-Hang He Chao-Nan Lin Xue-Xia Chen Jin-Hao ZangWen-Bo Zhao Yan-Cheng Chen Lei-Lei Zhang Yi-Zhe Li Chong-Xin Shan Henan Key Laboratory of Diamond Optoelectronic Material and Devices Key Laboratory of Material physicsMinistry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China vacuum Interconnected Nanotech Workstation(Nano-X) Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of Sciences(CAS)Suzhou 215123China

Ga_(2)O_(3)has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth *** semiconductor microwires(MWs)possess unique optical and electronic characteristics,the performances of photodetectors developed from Ga_(2)O_(3)MWs are still less than ***,we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga_(2)O_(3)MWs,possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 ***,a 1×10 solar-blind photodetector linear array is developed based on the Sn-doped Ga_(2)O_(3)MWs via a patternedelectrodes *** clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solarblind imaging *** results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga_(2)O_(3)MWs,and thus may push forward their future applications.

关键词： Sn-doped Ga_(2)O_(3) microwires photodetector linear array solar-blind imaging

UHV/CVD Low-Temperature Si Epitaxy Used for SiGe HBT

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Journal of Rare Earths 2004年第Z2期22卷 30-34页

作者： Huang Wentao Shen Guanhao Li Xiyou Chen Changchun Zhang Wei Liu Zhihong Chen Peiyi Tsien Peihsin inst.tute of microelectronics Tsinghua UniversityBeijing 100084China

Low-temperature-epitaxy n-type silicon layers were grown on arsenic-doped n+-type silicon substrate by using ultra-high vacuum chemical vapor deposition (UHV/CVD). The transition region thickness of the Si layers grown under different PH3 flux and different growth temperature were investigated by spreading resistance probe. Results showed that the growth temperature had remarkable influence on the arsenic diffusion from the Si substrate. The thicknesses of the transition region were 0.16 μm grown at 700 ℃ and 0.06 μm grown at 500 ℃, respectively. Moreover, the dopant profiles were very abrupt. X-ray diffraction investigation of the epitaxial Si layer showed the quality of Si layer was very *** e HBT device was fabricated by using a revised double-mesa polysilicon-emitter process. Tests show that the CB-junction breakdown characteristic of the SiGe HBT is very hard, and the leakage current is only 0.3 μA under a reverse voltage of - 14.0 V. The SiGe HBT device had also good output performance, and the current gain is 60.

关键词： UHV/CVD low temperature Si epitaxy dopant profile SiGe HBT

Growth of Ge Layer on Relaxed Ge-Rich SiGe by Ultrahigh vacuum Chemical Vapor Deposition

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Tsinghua Science and Technology 2007年第6期12卷 747-751页

作者：刘佳磊梁仁荣王敬徐阳许军刘志弘 inst.tute of microelectronics Tsinghua University

The paper describes the growth of a germanium （Ge） film on a thin relaxed Ge-rich SiGe buffer. The thin Ge-rich SiGe buffer layer was achieved through a combination of ultrahigh vacuum chemical vapor deposition （UHVCVD） SiGe epitaxial growth and SiGe oxidation. A lower Ge content strained SiGe layer was first grown on the Si （001） substrate and then the Ge mole fraction was increased by oxidation. After removal of the surface oxide, a higher Ge content SiGe layer was grown and oxidized again. The Ge mole fraction was increased to 0.8 in the 50 nm thick SiGe layer. Finally a 150 nm thick pure Ge film was grown on the SiGe buffer layer using the UHVCVD system. This technique produces a much thinner buffer than the conventional compositionally graded relaxed SiGe method with the same order of magnitude threading dislocation density.

关键词： pure Ge SiGe buffer oxidation ultrahigh vacuum chemical vapor deposition

High resolution interface circuit for closed-loop accelerometer

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Journal of Semiconductors 2011年第4期32卷 116-123页

作者：尹亮刘晓为陈伟平周治平 Department of microelectronics Harbin Institute of Technology Key Laboratory of Micro-Systems and Micro-Structures Manufacturing Ministry of Education Department of microelectronics Harbin Institute of TechnologyHarbin 150001China

This paper reports a low noise switched-capacitor CMOS interface circuit for the closed-loop operation of a capacitive *** time division multiplexing of the same electrode is adopted to avoid the strong feedthrough between capacitance sensing and electrostatic force feedback.A PID controller is designed to ensure the stability and dynamic response of a high Q closed-loop accelerometer with a vacuum *** architecture only requires single ended operational amplifiers,transmission gates and *** results show that a full scale acceleration of±3 g,non-linearity of 0.05%and signal bandwidth of 1000 Hz are *** complete module operates from a±5 V supply and has a measured sensitivity of 1.2 V/g with a noise of floor of 0.8μg/（Hz）;in *** chip is fabricated in the 2μm two-metal and two-poly n-well CMOS process with an area of 15.2 mm;.These results prove that this circuit is suitable for high performance micro-accelerometer applications like seismic detection and oil exploration.

关键词： closed-loop accelerometer interface circuit switched capacitor low noise

High Quality SiGe Layer Deposited by a New Ultrahigh vacuum Chemical Vapor Deposition System

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Journal of Materials Science & Technology 2000年第1期16卷 94-96页

作者： Guangli LUO, Xiaofeng LIN, Peiyi CHEN and Peixin TSIAN (inst.tute of microelectronics, Tsinghua University, Beijing 100084, China inst.tute of microelectronics Tsinghua University Beijing 100084 China

An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is developed and the details of its construction and operation are reported. Using high purity SiH4 and GeH4 reactant gases, the Si0.82Ge0.18 layer is deposited at 550℃. With the measurements by double crystal X-ray diffraction (DCXRD), transmission electron microscopy (TEM) and Rutherford backscattering spectroscppy (RBS) techniques, it is shown that the crystalline quality of the SiGe layer is good, and the underlying SiGe/Si heterointerface is sharply defined.

关键词： SiGe high High Quality SiGe Layer Deposited by a New Ultrahigh vacuum Chemical Vapor Deposition System

Active layer self-protection process for organic field-effect transistors

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Journal of Semiconductors 2009年第9期30卷 45-48页

作者：刘舸刘明商立伟涂德钰刘兴华王宏柳江 Laboratory of Nanofabrication and Novel Device Integration Institute of MicroelectronicsChinese Academy of Sciences

To isolate the active layer from air, double organic layer organic field-effect transistors have been fabricated, based on a two-step vacuum-deposition process. Pentacene acted as the active layer, and subsequently, CuPc was deposited above the pentacene and served as a protecting layer for the active layer. Due to the same electrical characteristics but different morphologies, the bilayer structure was effective in decreasing the contamination of impurities and gas, and then improved the device stability in air.

关键词： OFET pentacene CuPc stability