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Core-Shell semiconductor-Graphene Nanoarchitectures for Efficient Photocatalysis:State of the Art and Perspectives

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Nano-Micro Letters 2024年第12期16卷 553-588页

作者： Jinshen Lan Shanzhi Qu Xiaofang Ye Yifan Zheng Mengwei Ma Shengshi Guo Shengli Huang Shuping Li Junyong Kang Engineering Research Center of Micro-Nano Optoelectronic Materials and Devices Ministry of EducationFujian Key Laboratory of Semiconductor Materials and ApplicationsCI Center for OSEDDepartment of PhysicsXiamen UniversityXiamen 361005People’s Republic of China

semiconductor photocatalysis holds great promise for renewable energy generation and environment remediation,but generally suffers from the serious drawbacks on light absorption,charge generation and transport,and structural stability that limit the *** core-shell semiconductorgraphene(CSSG)nanoarchitectures may address these issues due to their unique structures with exceptional physical and chemical *** review explores recent advances of the CSSG nanoarchitectures in the photocatalytic *** starts with the classification of the CSSG nanoarchitectures by the ***,the construction methods under internal and external driving forces were introduced and compared with each ***,the physicochemical properties and photocatalytic applications of these nanoarchitectures were discussed,with a focus on their role in *** ends with a summary and some perspectives on future development of the CSSG nanoarchitectures toward highly efficient photocatalysts with extensive *** harnessing the synergistic capabilities of the CSSG architectures,we aim to address pressing environmental and energy challenges and drive scientific progress in these fields.

关键词： Core-shell semiconductor-graphene Nanoarchitecture Photocatalysis Driving force Interface

Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

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Science China(Information Sciences) 2024年第9期67卷 348-349页

作者： Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO Changsha semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Hunan San'an semiconductor Co. Ltd. Songshan Lake Materials Laboratory

GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility. However, the hole-based GaN transistors which are pivotal to the GaN-based CMOS circuits and high-side switching are still under investigation. Two-dimensional hole gas(2DHG) has been used to demonstrate the p-channel GaN field-effect-transistors(FETs) [1–5].

关键词： MOSFETS

Current collapse suppressed GaN diodes with 38 Watts high RF power rectifier capability

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Science China(Information Sciences) 2024年第2期67卷 335-336页

作者： Kui DANG Zhilin QIU Shudong HUO Peng ZHAN Huining LIU Yachao ZHANG Jing NING Hong ZHOU Jincheng ZHANG Key Lab of Ministry of Education for Wide Band-Gap semiconductor Materials and Devices School of MicroelectronicsXidian University Guangzhou Wide Bandgap semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University

Microwave power transmission(MPT) could realize the point-to-point long-distance transfer of energy without any wires, which makes it attractive for solar-powered satellites,drones, and implantable medical devices, and has aroused enormous attention [1]. Microwave rectifiers could convert RF(radio frequency) energy into DC(direct current) power,

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Recent progresses in thermal treatment of β-Ga_(2)O_(3) single crystals and devices

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International Journal of Minerals,Metallurgy and Materials 2024年第7期31卷 1659-1677页

作者： Yuchao Yan Zhu Jin Hui Zhang Deren Yang State Key Laboratory of Silicon and Advanced semiconductor Materials and School of Materials Science and Engineering Zhejiang UniversityHangzhou 310027China Zhejiang Provincial Key Laboratory of Power semiconductor Materials and Devices ZJU-Hangzhou Global Scientific and Technological Innovation CenterHangzhou 311200China

In recent years,ultra-wide bandgap β-Ga_(2)O_(3) has emerged as a fascinating semiconductor material due to its great potential in power and photoelectric *** semiconductor industrial,thermal treatment has been widely utilized as a convenient and effective approach for substrate property modulation and device ***,a thorough summary of β-Ga_(2)O_(3) substrates and devices behaviors after high-temperature treatment should be *** this review,we present the recent advances in modulating properties of β-Ga_(2)O_(3) substrates by thermal treatment,which include three major applications:(ⅰ)tuning surface electrical properties,(ⅱ)modifying surface morphology,and(ⅲ)oxidating ***,regulating electrical contacts and handling with radiation damage and ion implantation have also been discussed in device *** each category,universal annealing conditions were speculated to figure out the corresponding problems,and some unsolved questions were proposed *** review could construct a systematic thermal treatment strategy for various purposes and applications of β-Ga_(2)O_(3).

关键词： β-gallium oxide thermal treatment substrates devices

Machine learning-assisted smart epitaxy ofⅢ-Ⅴsemiconductors

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Science China Materials 2024年第9期67卷 3041-3042页

作者： Yue Hao Key Laboratory of Wide Band Gap semiconductor Technology School of MicroelectronicsXidian UniversityXi’an710071China

semiconductor epitaxial growth is the front-end process for manufacturing microelectronic and optoelectronic *** beam epitaxy(MBE),capable of precisely controlling atomic layer deposition,has emerged as a crucial technique in chip atomic-level manufacturing[1].However,in semiconductor epitaxy,the heterogeneous nature of materials is complicated,and the growth condition fluctuations poses significant challenges in defect suppression[2],substantially impacting chip performance and yield.

关键词： optoelectronic smart semiconductors

Design of high frequency broadband low insertion loss SAW filter at 3.5 GHz

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The Journal of China Universities of Posts and Telecommunications 2024年第2期31卷 55-61页

作者： Wang Wei Zhang Ying Wang Fang Wu Hao Ding Hui Xia Xu Wang Guanyu Xie Yingtao School of Optoelectronics Engineering/International semiconductor College Chongqing University of Posts and TelecommunicationsChongqing 400065China

With the wide application of the fifth-generation mobile communication system(5G)technology,wireless communication equipment tends to develop in miniaturization,high frequency,and low *** this paper,a surface acoustic wave(SAW)filter with a center frequency of 3.5 GHz was ***,the acoustic waveguide structure of the longitudinal leaky SAW(LLSAW)excitation is determined,and the two-dimensional(2D)theoretical model of the device is established by COMSOL ***,the influence of electrode parameters on the performance of the device is studied,and the electrode parameters are optimized on this *** setting the device structure parameters reasonably,the spurious in the passband can be effectively ***,the center frequency of the mirror T-structure LLSAW filter is 3.536 GHz,the insertion loss is-1.414 dB,the bandwidth of-3 dB is 276 MHz,and the out-of-band rejection is greater than-30 dB.

关键词： surface acoustic wave(SAW) electrode spurious response mirror T-structure

Rational molecular design of efficient yellow-red dendrimer TADF for solution-processed OLEDs: a combined effect of substitution position and strength of the donors

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Science China Chemistry 2024年第5期67卷 1613-1623页

作者： Changfeng Si Dianming Sun Tomas Matulaitis David B.Cordes Alexandra M.Z.Slawin Eli Zysman-Colman Organic semiconductor Centre EaStCHEM School of ChemistryUniversity of St AndrewsSt AndrewsKY169STUK

The development of high-performance solution-processed red organic light-emitting diodes(OLEDs) remains a challenge,particularly in terms of maintaining efficiency at high luminance. Here, we designed and synthesized four novel orange-red thermally activated delayed fluorescence(TADF) dendrimers that are solution-processable: 2GCz BP, 2DPACz BP, 2FBP2GCz and 2FBP2DPACz. We systematically investigated the effect of substitution position and strength of donors on the optoelectronic properties. The reverse intersystem crossing rate constant(kRISC) of the emitters having donors substituted at positions 11and 12 of the dibenzo[a,c]phenazine(BP) is more than 10-times faster than that of compounds substituted having donors substituted at positions 3 and 6. Compound 2DPACz BP, containing stronger donors than 2GCz BP, exhibits a red-shifted emission and smaller singlet-triplet energy splitting, ΔE_(ST), of 0.01 e V. The solution-processed OLED with 10 wt% 2DPACz BP doped in m CP emitted at 640 nm and showed a maximum external quantum efficiency(EQE_(max)) of 7.8%, which was effectively maintained out to a luminance of 1,000 cd m-2. Such a device's performance at relevant display luminance is among the highest for solution-processed red TADF OLEDs. The efficiency of the devices was improved significantly by using 4Cz IPN as an assistant dopant in a hyperfluorescence(HF) configuration, where the 2DPACz BP HF device shows an EQEmaxof 20.0% at λEL of 605 nm and remains high at 11.8% at a luminance of 1,000 cd m-2, which makes this device one of the highest efficiency orange-to-red HF SP-OLEDs to date.

关键词： thermally activated delayed fluorescence solution-processing red OLEDs dibenzo[a,c]phenazine dendrimers

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO State Key Laboratory of Wide-Bandgap semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and ***, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Dual-Schottky-junctions coupling device based on ultra-longβ-Ga_(2)O_(3)single-crystal nanobelt and its photoelectric properties

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Journal of semiconductors 2024年第5期45卷 90-98页

作者： Haifeng Chen Xiaocong Han Chenlu Wu Zhanhang Liu Shaoqing Wang Xiangtai Liu Qin Lu Yifan Jia Zhan Wang Yunhe Guan Lijun Li Yue Hao Key Laboratory of Advanced semiconductor Devices and Materials School of Electronic EngineeringXi’an University of Posts andT elecommunicationsXi’an 710121China State Key Discipline Laboratory of Wide Band Gap semiconductor Technology School of MicroelectronicsXidian UniversityXi'an 710071China

High qualityβ-Ga_(2)O_(3)single crystal nanobelts with length of 2−3 mm and width from tens of microns to 132μm were synthesized by carbothermal reduction *** on the grown nanobelt with the length of 600μm,the dual-Schottky-junctions coupling device(DSCD)was *** to the electrically floating Ga_(2)O_(3)nanobelt region coupling with the double Schottky-junctions,the current I_(S2)increases firstly and rapidly reaches into saturation as increase the voltage V_(S2).The saturation current is about 10 pA,which is two orders of magnitude lower than that of a single *** the case of solar-blind ultraviolet(UV)light irradiation,the photogenerated electrons further aggravate the coupling physical mechanism in device.I_(S2)increases as the intensity of UV light *** the UV light of 1820μW/cm^(2),I_(S2)quickly enters the saturation *** V_(S2)=10 V,photo-to-dark current ratio(PDCR)of the device reaches more than 104,the external quantum efficiency(EQE)is 1.6×10^(3)%,and the detectivity(D*)is 7.5×10^(12)*** addition,the device has a very short rise and decay times of 25−54 ms under different positive and negative *** shows unique electrical and optical control characteristics,which will open a new way for the application of nanobelt-based devices.

关键词： β-Ga_(2)O_(3)nanobelt carbothermal reduction UV light dual-Schottky coupling device