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Mechanisms of enhanced sub-bandgap absorption in high-speed all-silicon avalanche photodiodes

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Photonics Research 2023年第2期11卷 337-346页

作者： YUAN YUAN WAYNE V.SORIN DI LIANG STANLEY CHEUNG YIWEI PENG MUDIT JAIN ZHIHONG HUANG MARCO FIORENTINO RAYMOND G.BEAUSOLEIL hewlett packard labs Hewlett Packard EnterpriseMilpitasCalifornia 95035USA

All-silicon (Si) photodiodes have drawn significant interest due to their single and simple material system and perfect compatibility with complementary metal-oxide semiconductor photonics. With the help from a cavity enhancement effect, many of these photodiodes have shown considerably high responsivity at telecommunication wavelengths such as 1310 nm, yet the mechanisms for such high responsivity remain unexplained. In this work,an all-Si microring is studied systematically as a photodiode to unfold the various absorption ***-6.4 V, the microring exhibits responsivity up to0.53 A∕W with avalanche gain, a 3 dB bandwidth of25.5 GHz, and open-eye diagrams up to 100 Gb/s. The measured results reveal the hybrid absorption mechanisms inside the device. A comprehensive model is reported to describe its working principle, which can guide future designs and make the all-Si microring photodiode a promising building block in Si photonics.

关键词： Gb/s avalanche absorption

Next-generation siliconphotonics:introduction

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Photonics Research 2022年第10期10卷 I0001-I0003页

作者： DAOXIN DAI DI LIANG PAVEL CHEBEN State Key Laboratory for Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityZijingang CampusHangzhou 310058China hewlett packard labs Hewlett Packard EnterprisePalo AltoCalifornia 94304USA National Research Council of Canada OttawaOntario K1A 0R6Canada

In the past decade,silicon photonics has been making tremendous progress in terms of device functionality and performances as well as circuit integration for many practical applications ranging from communication,sensing,and information *** special issue,including four review articles and nine research articles,aims to provide a comprehensive overview of this exciting *** offer a collective summary of recent progresses,in-depth discussions of the state-of-the-art,and insights into forthcoming developments that are well poised to drive silicon photonics technology into its next generation.

关键词： collective discussions photonics

64 Gb/s low-voltage waveguide SiGe avalanche photodiodes with distributed Bragg reflectors

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Photonics Research 2020年第7期8卷 1118-1123页

作者： Binhao Wang Zhihong Huang Yuan Yuan Di Liang Xiaoge Zeng Marco Fiorentino Raymond G.Beausoleil hewlett packard Laboratories Hewlett Packard EnterprisePalo AltoCalifornia 94304USA

We demonstrate low-voltage waveguide silicon-germanium avalanche photodiodes(APDs)integrated with distributed Bragg reflectors(DBRs).The internal quantum efficiency is improved from 60%to 90%at 1550 nm assisted with DBRs while still achieving a 25 GHz bandwidth.A low breakdown voltage of 10 V and a gain bandwidth product of near 500 GHz are *** with DBRs at a data rate of 64 Gb/s pulse amplitude modulation with four levels(PAM4)show a 30%–40%increase in optical modulation amplitude(OMA)compared to APDs with no DBR.A sensitivity of around-13 d Bm at a data rate of 64 Gb/s PAM4 and a bit error rate of 2.4×10^-4 is realized for APDs with DBRs,which improves the sensitivity by^2 d B compared to APDs with no DBR.

关键词： Gb/s waveguide avalanche

Ultra-power-efficient heterogeneous Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers for DWDM optical links

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Photonics Research 2022年第2期10卷 I0009-I0021页

作者： Stanley Cheung Geza Kurczveil Yingtao Hu Mingye Fu Yuan Yuan Di Liang Raymond G.Beausoleil hewlett packard labs Hewlett Packard EnterpriseMilpitasCalifornia 95035USA

We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded Ⅲ–Ⅴ/Si metal-oxide-semiconductor capacitor(MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic *** second-and third-order MOSCAP AMZI(de-)interleavers exhibit cross-talk(XT) levels down to -22 dB and -32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI(de-)interleavers have XT levels down to -27 dB,-22 dB, and-20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6–27 μA∕cm^(2). To the best of our knowledge, we have demonstrated for the first time, athermal Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.

关键词： tuning power interferometer

Phosphine oxide-functionalized polyfluorene derivatives:Synthesis,photophysics,electrochemical properties,and electroluminescence performance

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Science China Chemistry 2011年第4期54卷 678-684页

作者： LIU DeAng GIBSON Gary BRUG James LAM Sity MAO Samuel S Lawrence Berkeley National Laboratory and Department of Mechanical Engineering University of CaliforniaBerkeleyCAUSA Information Surfaces Lab Hewlett Packard LabsHewlett Packard Company1501 Page Mill RoadPalo AltoCA 94304USA

A series of phosphine oxide-functionalized polyfluorene derivatives,PFH-PO-40-1 (P1),PFH-PO-20-1 (P2),PFH-PO-10-1 (P3),and PFH-PO-1-1 (P4),were prepared via a palladium-mediated Suzuki cross-coupling *** structures and purities of all polymers were fully characterized by 1H and 13C NMR,UV-vis and photoluminescent spectroscopy,gel permeation chromatography,and TGA/*** emission features showed single broad peaks at about 445 nm in film,compared with those in dilute solutions,which might be caused by some degree of aggregation in the excited states of the *** best electroluminescence (EL) performance of these polymers with configuration of ITO/PEDOT:PSS/Polymer/Alq3/LiF/Al was obtained from P1 (current efficiency was 4.2 Cd/A at 6V).

关键词：电致发光性能聚芴衍生物电化学性能官能化氧化膦光物理凝胶渗透色谱法聚合物结构

A regression model-based method for indoor positioning with compound location fingerprints

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Geo-Spatial Information Science 2019年第2期22卷 107-113,I0003页

作者： Tomofumi Takayama Takeshi Umezawa Nobuyoshi Komuro Noritaka Osawa hewlett-packard Japan LtdTokyoJapan Graduate School of Engineering Chiba UniversityChibaJapan

This paper proposed and evaluated an estimation method for indoor *** method combines location fingerprinting and dead reckoning differently from the conventional *** uses compound location fingerprints,which are composed of radio fingerprints at multiple points of time,that is,at multiple positions,and displacements between them estimated by dead *** avoid errors accumulated from dead reckoning,the method uses short-range dead *** method was evaluated using 16 Bluetooth beacons installed in a student room with the dimensions of 11×5 m with furniture *** Received Signal Strength Indicator(RSSI)values of the beacons were collected at 30 measuring points,which were points at the intersections on a 1×1 m grid with no obstacles.A compound location fingerprint is composed of RSSI vectors at two points and a displacement vector between *** Forests(RF)was used to build regression models to estimate positions from location *** root mean square error of position estimation was 0.87 m using 16 Bluetooth *** error is lower than that received with a single-point baseline model,where a feature vector is composed of only RSSI values at one *** results suggest that the proposed method is effective for indoor positioning.

关键词： Indoor positioning integrated estimation radio fingerprinting dead reckoning machine learning non-linear regression

Ⅲ/Ⅴ-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template

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Light(Science & Applications) 2019年第1期8卷 330-338页

作者： Yingtao Hu Di Liang Kunal Mukherjee Youli Li Chong Zhang Geza Kurczveil Xue Huang Raymond G.Beausoleil hewlett packard labs Hewlett Packard Enterprise1501 Page Mill RoadPalo AltoCA 94304USA Materials Department University of California Santa BarbaraSanta BarbaraCA 93106USA

Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers,highperformance computers,and many emerging *** inefficiency of light emission in silicon still requires the integration of a Ⅲ/Ⅴ laser chip or optical gain materials onto a silicon substrate.A number of integration approaches,including flip-chip bonding,molecule or polymer wafer bonding,and monolithic Ⅲ/Ⅴ epitaxy,have been extensively explored in the past ***,we demonstrate a novel photonic integration method of epitaxial regrowth of Ⅲ/Ⅴ on a Ⅲ/Ⅴ-on-SOI bonding template to realize heterogeneous lasers on *** method decouples the correlated root causes,i.e.,lattice,thermal,and domain mismatches,which are all responsible for a large number of detrimental dislocations in the heteroepitaxy *** grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5×104 cm^(−2),two orders of magnitude lower than the state-of-the-art conventional monolithic growth on *** low dislocation density would eliminate defect-induced laser lifetime concerns for practical *** fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31μm,with a minimal threshold current density of 813 A/cm^(2).This generic concept can be applied to other material systems to provide higher integration density,more functionalities and lower total cost for photonics as well as microelectronics,MEMS,and many other applications.

关键词： bonding integration template

Inductive transfer learning for unlabeled target-domain via hybrid regularization

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Chinese Science Bulletin 2009年第11期54卷 2470-2478页

作者： ZHUANG FuZhen LUO Ping HE Qing SHI ZhongZhi Key Laboratory of Intelligent Information Processing Institute of Computing Technology Chinese Academy of Sciences Beijing 100190 China hewlett packard labs China Beijing 100084 China Graduate University of Chinese Academy of Sciences Beijing 100190 China

Recent years have witnessed an increasing interest in transfer learning. This paper deals with the classification problem that the target-domain with a different distribution from the source-domain is totally unlabeled, and aims to build an inductive model for unseen data. Firstly, we analyze the problem of class ratio drift in the previous work of transductive transfer learning, and propose to use a normalization method to move towards the desired class ratio. Furthermore, we develop a hybrid regularization framework for inductive transfer learning. It considers three factors, including the distribution geometry of the target-domain by manifold regularization, the entropy value of prediction probability by entropy regularization, and the class prior by expectation regularization. This framework is used to adapt the inductive model learnt from the source-domain to the target-domain. Finally, the experiments on the real-world text data show the effectiveness of our inductive method of transfer learning. Meanwhile, it can handle unseen test points.

关键词：归纳学习正规化标签杂交归一化法预测概率文字资料归纳法

An advanced Ⅲ-Ⅴ-on-silicon photonic integration platform

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Opto-Electronic Advances 2021年第9期4卷 14-27页

作者： Yingtao Hu Di Liang Raymond G.Beausoleil hewlett packard labs Hewlett Packard Enterprise820 N McCarthy BlvdMilpitasCA 95035USA

In many application scenarios,silicon(Si)photonics favors the integration of Ⅲ-Ⅴ gain material onto Si substrate to real-ize the on-chip light *** addition to the current popular integration approaches of Ⅲ-Ⅴ-on-Si wafer bonding or dir-ect heteroepitaxial growth,a newly emerged promising solution of epitaxial regrowth on bonded substrate has attracted a lot of ***-quality Ⅲ-Ⅴ material realization and successful laser demonstrations show its great potential to be a promising integration platform for low-cost,high-integration density and highly scalable active-passive photonic integra-tion on *** paper reviews recent research work on this regrowth on bonded template platform including template de-velopments,regrown material characterizations and laser *** potential advantages,opportunities and challenges of this approach are discussed.

关键词： Si photonics Ⅲ-Ⅴ-on-Si laser photonic integration epitaxy regrowth