Ultra-power-efficient heterogeneous Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers for DWDM optical links

作     者：Stanley Cheung Geza Kurczveil Yingtao Hu Mingye Fu Yuan Yuan Di Liang Raymond G.Beausoleil STANLEY CHEUNG;GEZA KURCZVEIL;YINGTAO HU;MINGYE FU;YUAN YUAN;DI LIANG;RAYMOND G.BEAUSOLEIL

作者机构：Hewlett Packard LabsHewlett Packard EnterpriseMilpitasCalifornia 95035USA 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2022年第10卷第2期

页      面：I0009-I0021页

核心收录：

学科分类：070207[理学-光学] 07[理学] 0702[理学-物理学] 

基　　金：Advanced Research Projects Agency-Energy(DE-AR0001039) 

主　　题：tuning power interferometer 

摘      要：We discuss the design and demonstration of various Ⅲ–Ⅴ/Si asymmetric Mach–Zehnder interferometer(AMZI)and ring-assisted AMZI(de-)interleavers operating at O-band wavelengths with 65 GHz channel spacing. The wafer-bonded Ⅲ–Ⅴ/Si metal-oxide-semiconductor capacitor(MOSCAP) structure facilitates ultra-low-power phase tuning on a heterogeneous platform that allows for complete monolithic transceiver photonic *** second-and third-order MOSCAP AMZI(de-)interleavers exhibit cross-talk(XT) levels down to -22 dB and -32 dB with tuning powers of 83.0 nW and 53.0 nW, respectively. The one-, two-, and three-ring-assisted MOSCAP AMZI(de-)interleavers have XT levels down to -27 dB,-22 dB, and-20 dB for tuning powers of 10.0 nW, 7220.0 nW, and 33.6 nW, respectively. The leakage current density is measured to be in the range of 1.6–27 μA∕cm^(2). To the best of our knowledge, we have demonstrated for the first time, athermal Ⅲ–Ⅴ/Si MOSCAP(de-)interleavers with the lowest XT and reconfiguration power consumption on a silicon platform.