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Machine Learning-Based Comprehensive Prediction Model for L1_(2) Phase-Strengthened Fe-Co-Ni-Based High-Entropy Alloys

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Acta Metallurgica Sinica(English Letters) 2024年第11期37卷 1858-1874页

作者： Xin Li Chenglei Wang Laichang Zhang Shengfeng Zhou Jian Huang Mengyao Gao Chong Liu Mei Huang Yatao Zhu Hu Chen Jingya Zhang Zhujiang Tan School of materials Science and Engineering Guangxi Key Laboratory of Information MaterialsEngineering Research Center of Electronic Information Materials and DevicesMinistry of EducationGuilin University of Electronic TechnologyGuilin541004China Centre for Advanced materials and Manufacturing School of EngineeringEdith Cowan University270 Joondalup DriveJoondalupPerthWA6027Australia Institute of Advanced Wear and Corrosion Resistance and functional materials Jinan UniversityGuangzhou510632China The 34t Research Institute of China Electronics Technology Group CorporationGuilin541004China

L1_(2)phase-strengthened Fe-Co-Ni-based high-entropy alloys(HEAs)have attracted considerable attention due to their excellent mechanical *** the properties of HEAs through conventional experimental methods is ***,a new method is needed to predict the properties of alloys quickly and *** this study,a comprehensive prediction model for L1_(2)phase-strengthened Fe-Co-Ni-based HEAs was *** existence of the L1_(2)phase in the HEAs was first predicted.A link was then established between the microstructure(L1_(2)phase volume fraction)and properties(hardness)of HEAs,and comprehensive prediction was ***,two mutually exclusive properties(strength and plasticity)of HEAs were coupled and *** Shapley additive explained algorithm was also used to interpret the contribution of each model feature to the comprehensive properties of *** vast compositional and process search space of HEAs was progressively screened in three stages by applying different prediction ***,four HEAs were screened from hundreds of thousands of possible candidate groups,and the prediction results were verified by *** this work,L1_(2)phase-strengthened Fe-Co-Ni-based HEAs with high strength and plasticity were successfully *** new method presented herein has a great cost advantage over traditional experimental *** is also expected to be applied in the design of HEAs with various excellent properties or to explore the potential factors affecting the microstructure/properties of alloys.

关键词： High-entropy alloy Machine learning L1_(2)phase Comprehensive prediction Shapley additive explanation(SHAP)

Localization effect in single crystal of RuAs_(2)

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Chinese Physics B 2024年第4期33卷 195-200页

作者：易哲铠刘琪光双魁徐升岳小宇梁慧李娜周颖吴丹丹孙燕李秋菊程鹏夏天龙孙学峰王义炎 Anhui key laboratory of Magnetic functional materials and devices Institute of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Department of Physics and key laboratory of Strongly-Coupled Quantum Matter Physics University of Science and Technology of ChinaHefei 230026China Department of Physics and Beijing key laboratory of Opto-electronic functional materials&Micro-nano devices Renmin University of ChinaBeijing 100872China School of optical and electronic Information Suzhou City UniversitySuzhou 215104China School of Physics and Optoelectronic Engineering Anhui UniversityHefei 230601China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

We report the magnetotransport and thermal properties of RuAs_(2) single ***_(2) exhibits semiconductor behavior and localization *** crossover from normal state to diffusive transport in the weak localization(WL)state and then to variable range hopping(VRH)transport in the strong localization state has been *** transitions can be reflected in the measurement of resistivity and Seebeck *** magnetoresistance(NMR)emerges with the appearance of localization effect and is gradually suppressed in high magnetic *** temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to *** measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization *** findings show that RuAs_(2) is a suitable platform to study the localized state.

关键词： weak localization variable range hopping RuAs_(2) single crystal

Field-driven merging of polarizations and enhanced electrocaloric effect in BaTiO_(3)-based lead-free ceramics

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Journal of Advanced Ceramics 2022年第11期11卷 1777-1788页

作者： Xiang NIU Xiaodong JIAN Weiping GONG Wei LIANG Xuetian GONG Guangzu ZHANG Shenglin JIANG Kun YU Xiaobo ZHAO Yingbang YAO Tao TAO Bo LIANG Sheng-Guo LU Guangdong Provincial key laboratory of functional Soft Condensed Matter School of Materials and EnergyGuangdong University of TechnologyGuangzhou 510006China Guangdong Provincial key laboratory of electronic functional materials and devices Huizhou UniversityHuizhou 516007China Science and Technology on Reliability Physics and Application of electronic Component laboratory The 5th Electronics Research Institute of the Ministry of Industry and Information TechnologyGuangzhou 510610China Dongguan South China Design Innovation Institute Dongguan 523808China School of optical and electronic Information Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and TechnologyWuhan 430074China

Solid-state cooling technology based on electrocaloric effect(ECE)has been advanced as an alternative to replace the vapour-compression approach to overcome the releasing of the global warming ***,the development in high ECE materials is still a *** this work,polarization merging strategy was proposed to achieve a large ECE in xBa(Sn_(0.07)Ti_(0.93))O_(3)–(1−x)Ba(Hf_(0.1)Ti_(0.9))O_(3) ferroelectric ceramics,where x=0,0.2,0.4,0.6,0.8,and ***(Sn_(0.07)Ti_(0.93))O_(3) with an orthorhombic phase and Ba(Hf_(0.1)Ti_(0.9))O_(3) with a rhombohedral phase at room temperature were prepared beforehand as precursors,and phase-coexisted xBSnT–(1−x)BHfT ceramics were formed via a solid-state reaction *** coexisting structures were confirmed using the X-ray *** merged polarization was confirmed by the dielectric and ferroelectric *** ECEs were obtained for 0.2BSnT–0.8BHfT ceramics,i.e.,adiabatic temperature change DT=2.16±0.08 K at 80℃and 5 MV/m,and DT=3.35±0.09 K at 80℃and 7 MV/m.

关键词： lead-free ferroelectric microstructure permittivity polarization electrocaloric effect(ECE)

Effect of In_xGa_(1-x)As Interlayer on Surface Morphology and optical Properties of GaSb/InGaAs Type-Ⅱ Quantum Dots Grown on InP (100) Substrates

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Chinese Physics Letters 2016年第9期33卷 120-123页

作者：陈虞龙高优陈弘张辉何苗李述体郑树文 Guangdong Engineering Research Center of Optoelectronic functional materials and devices Institute of Opto-Electronic Materials and TechnologySouth China Normal University key laboratory for Renewable Energy Chinese Academy of SciencesBeijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condense Matter PhysicsInstitute of PhysicsChinese Academy of Sciences College of Physics and Optoelectric Engineering Guangdong University of Technology

The effects of indium composition in InGaAs interlayer and on optical properties of GaSb/InGaAs QD material on morphology of GaSb/InGaAs quantum dots （QDs） system are studied. AFM images show that the change of the indium composition in InGaAs interlayer can alter the GaSb QD morphology. It is found that low indium composition in InGaAs interlayer can promote the formation of QDs, while high indium composition can inhibit the formation of QDs. The photoluminescence （PL） spectra of GaSb/InGaAs QDs at 8 K under low excitation power indicate that the third root of the excitation power is linear with the peak position, which provides a direct evidence for their luminescence belonging to type-Ⅱ material optical transition. The PL spectra at 8 K under an excitation power of 90row show that the optical properties of GaSb/InGaAs QD material system can be affected by the indium composition in the InGaAs interlayer, and the PL peak position is linear with the indium composition. The optical properties of GaSb/InGaAs QDs can be improved by adjusting the indium composition in the InGaAs interlayer.

关键词： InGaAs in it GaSb Quantum Dots Grown on InP Substrates x)As Interlayer on Surface Morphology and optical Properties of GaSb/InGaAs Type of on

Simultaneous achievement of large electrocaloric effect and ultrawide operating temperature range in BaTiO_(3)-based lead-free ceramic

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Journal of Advanced Ceramics 2024年第8期13卷 1234-1241页

作者： Zhaojie Wang Yingzhi Meng Silin Tang Xiang Niu Hongfang Zhang Dingyuan Wang Yisong Bai Bialin Peng Xue Chen Qingqing Ke Sheng-Guo Lu Laijun Liu guangxi key lab of optical and electronic functional materials and devices Collaborative Innovation Center for Exploration of Nonferrous Metal Deposits and Efficient Utilization of ResourcesCollege of Materials Science and EngineeringGuilin University of TechnologyGuilin 541004China School of Microelectronics Science and Technology Sun Yat-sen UniversityZhuhai 519082China Guangdong Provincial Research Center on Smart materials and Energy Conversion devices School of Materials and EnergyGuangdong University of TechnologyGuangzhou 510006China School of Physical Science and Technology&key laboratory of Advanced Electrode materials for Novel Solar Cells for Petroleum and Chemical Industry of China Suzhou University of Science and TechnologySuzhou 215009China Qingdao Haier Smart Technology R&D Co. Ltd.Qingdao 266100China School of Advanced materials and Nanotechnology Xidian UniversityXi'an 710071China guangxi key laboratory of Manufacturing System&Advanced Manufacturing Technology Guilin University of Electronic TechnologyGuilin 541004China

The electrocaloric effect(ECE),known for its environmentally friendly characteristics,holds significant promise for advancing next-generation solid-state refrigeration *** a large ECE along with a wide working temperature range near room temperature remains a key developmental *** this study,we successfully obtained a substantial ECE of 1.78 K and an extensive working temperature range of 103 K(AT>1.52 K)near room temperature in CaZrO_(3)-modified BaTiO_(3) lead-free ferroelectric ***,this achievement was verified using direct *** piezoresponse force microscopy(PFM)results suggest that the broad temperature range is attributed to the formation of ferroelectric microdomains and polar nanoregions(PNRs).Furthermore,X-ray photoelectron spectroscopy(XPS)and ultraviolet-visible(UV-Vis)spectroscopy reveal a decrease in the oxygen vacancy concentration and an increase in the bandgap for higher CaZrO_(3) doping *** changes synergistically enhance the maximum applied electric field,helping to achieve a high-performance EcE near room *** research presents a straightforward and effective approach for achieving high-performance ECEs in BaTiOg lead-free ceramics,offering promising prospects for application in next-generation solid-state refrigeration technologies.

关键词： BaTiO_(3) electrocaloric effect oxygen vacancy band-gap

Preparation and Characterization of CeO_2/YSZ/CeO_2 Buffer Layers for YBCO Coated Conductors

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Journal of materials Science & Technology 2007年第4期23卷 457-460页

作者： Jie XIONG Yin CHEN Yang QIU Bowan TAO Wenfeng QIN Xumei CUI Yanrong LI State key lab of electronic Thin Films and Integrated devices University of Electronic Science and Technology of China Chengdu 610054 China

CeO2 seed layer was deposited on rolling-assisted biaxially textured metal substrates by direct-current （DC） magnetron reactive sputtering. The effect of deposition temperature on epitaxial orientation of CeO2 thin films was examined. High quality CeO2 layers were achieved at deposition temperature from 750℃ to 850℃.Subsequently yttria-stabilized zirconia （YSZ） and CeO2 films were deposited to complete the buffer layer structure via the same process. The best samples exhibited a highly biaxial texture, as indicated by FWHM （full width half maximum） values in the range of 4°-5°, and 2°-4° for in-plane and out-of-plane orientations,respectively. Secondary ion mass spectrometer analysis confirmed the effective prevention of buffer layer against Ni and W metal interdiffusion. Atomic force microscope observations revealed a smooth, dense and crack-free surface morphology, which provided themselves as the good buffer structure to the YBa2Cu3O7-δ（YBCO） coated conductors.

关键词： Buffer Direct-current magnetron reactive sputtering Coated conductors RABiTS

Direct Photolithography of WO_x Nanoparticles for High-Resolution Non-Emissive Displays

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NANO-MICRO LETTERS 2025年第1期17卷 1-13页

作者： Gu, Chang Yang, Guojian Wang, Wenxuan Shi, Aiyan Fang, Wenjuan Qian, Lei Hu, Xiaofei Zhang, Ting Xiang, Chaoyu Zhang, Yu-Mo Chinese Acad Sci Ningbo Inst Mat Technol & Engn Lab Optoelect Informat Technol & Devices Ningbo 315201 Peoples R China Qianwan Inst CNITECH Hangzhou Bay Lab Adv Nanooptoelectron Mat & Device Ningbo 315336 Peoples R China Zhejiang Univ Innovat Ctr Yangtze River Delta Smart Mat Architecture Res Lab Jiaxing 314100 Peoples R China Univ Sci & Technol China Hefei 230026 Peoples R China Jilin Univ Coll Chem State Key Lab Supramol Struct & Mat Changchun 130012 Peoples R China

High-resolution non-emissive displays based on electrochromic tungsten oxides (WOx) are crucial for future near-eye virtual/augmented reality interactions, given their impressive attributes such as high environmental stability, ideal outdoor readability, and low energy consumption. However, the limited intrinsic structure of inorganic materials has presented a significant challenge in achieving precise patterning/pixelation at the micron scale. Here, we successfully developed the direct photolithography for WOx nanoparticles based on in situ photo-induced ligand exchange. This strategy enabled us to achieve ultra-high resolution efficiently (line width m, the best resolution for reported inorganic electrochromic materials). Additionally, the resulting device exhibited impressive electrochromic performance, such as fast response (optical modulation (55.9%), and durability (> 3600 cycles), as well as promising applications in electronic logos, pixelated displays, flexible electronics, etc. The success and advancements presented here are expected to inspire and accelerate research and development (R&D) in high-resolution non-emissive displays and other ultra-fine micro-electronics.

关键词： Electrochromic Direct photolithography WOx nanoparticles In situ photo-induced ligand exchange High-resolution displays

Bright and tunable emissive monodisperse CsPbI3@Cs4PbI6 nanocomposites via a precise and controllable dissolution−recrystallization method

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Nano Research 2023年第1期16卷 1586-1594页

作者： Luyu Cao Bomei Liu Lin Huang Zhi Zhou Chong-Geng Ma Jian Zhang Jing Wang Ministry of Education key laboratory of Bioinorganic and Synthetic Chemistry State Key Laboratory of Optoelectronic Materials and TechnologiesSchool of ChemistrySun Yat-Sen UniversityGuangzhou 510275China School of materials Science and Engineering Sun Yat-Sen UniversityGuangzhou 510275China College of Science Hunan Optical Agriculture Engineering Technology Research CenterHunan Agricultural UniversityChangsha 410128China CQUPT-BUL Innovation Institute Chongqing University of Posts and TelecommunicationsChongqing 400065China Engineering Research Center of electronic Information materials and devices(Ministry of Education) Guangxi Key Laboratory of Information MaterialsGuangxi Collaborative Innovation Center of Structure and Property for New Energy and MaterialsSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China

Nowadays,due to uncontrolled synthesis and lack of more direct and systematic evidences,the photoluminescence origin of“zero-dimensional”Cs4PbI6 remains great controversy and the luminescence cannot be *** we propose a controllable dissolution-recrystallization method to synthesize“emissive”and“non-emissive”Cs4PbI6 nanocrystals(NCs)*** comparing“emissive”and“non-emissive”Cs4PbI6 NCs,it is clearly proved that the visible emission in“emissive”Cs4PbI6 NCs comes from embedded CsPbI3 quantum dots(QDs).It is found for CsPbI3@Cs4PbI6 nanocomposites,methyl acetate(MeAC)and cyclohexane play an important role in dissolution and recrystallization respectively to obtain Cs4PbI6 matrix and CsPbI3 *** from this two-step method,the as-synthesized CsPbI3@Cs4PbI6 nanocomposites with CsPbI3 QDs uniformly distributed in Cs4PbI6 matrix are bright with photoluminescence quantum yield(PLQY)up to 71.4%and exhibit improved stability than CsPbI3 ***,utilizing its formation mechanism,the size of embedded CsPbI3 QDs can be controlled by reasonable designing the“dissolution”process,so that the luminescence of this CsPbI3@Cs4PbI6 nanocomposites can be adjusted in a wide range from green to red(554–630 nm).Our finding not only provides a novel method for synthesizing tunable“emissive”Cs4PbI6 NCs,but also makes clear the photoluminescence origin of“emissive”Cs4PbI6.

关键词： CsPbI3@Cs4PbI6 dissolution-recrystallization nanocomposites tunable emission

Simultaneous low extinction and high local field enhancement in Ag nanocubes

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Chinese Physics B 2011年第3期20卷 1-8页

作者：周飞刘晔李志远 laboratory of optical Physics Institute of Physics Chinese Academy of Sciences Anhui Provincial key lab of Photonics devices and materials Anhui Institute of Optics and Fine Mechanics Chinese Academy of Sciences Hefei 230031

We theoretically investigate surface plasmon resonance properties in Au and Ag cubic nanoparticles and find a novel plasmonic mode that exhibits simultaneous low extinction and high local field enhancement properties. We analyse this mode from different aspects by looking at the distribution patterns of local field intensity, energy flux, absorption and charge density. We find that in the mode the polarized charge is highly densified in a very limited volume around the corner of the nanocube and results in very strong local field enhancement. Perturbations of the incident energy flux and light absorption are also strongly localized in this small volume of the corner region, leading to both low absorption and low scattering cross section. As a result, the extinction is low for the mode. Metal nanoparticles involving such peculiar modes may be useful for constructing nonlinear compound materials with low linear absorption and high nonlinearity.

关键词： surface plasmon resonance low extinction local field enhancement