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Research on COB De-embedding in Scattering Parameter Measurement

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Journal of Harbin Institute of Technology(New Series) 2017年第1期24卷 37-42页

作者： Lei Wang Jingyi Zhang Key Laboratory of Specialty Fiber Optics and Optical Access Networks Shanghai UniversityShanghai 200333China Shanghai Huahong grace semiconductor Manufacturing corporation Shanghai 201203China

The popular radio frequency(RF) chip on board(COB) test has gradually taken the place of onwafer test due to the high efficiency and high power. This paper presents the extended Open-Short-Load(OSL) that is one-port calibration method to verify the error model de-embedding in S parameter measurement. Threelevel cascade structure on COB's system error model is proposed and analyzed. Four kinds of calibration plane solutions for de-embedding are verified. At last,on-board calibration(CAL) kits solution is established to decrease the system error to the least value. The maximum error shift can be controlled less than 0.1 dB comparing with the on-wafer test results. In general,the practical application results prove that this method is reasonable and effective and easy to be mastered.

关键词： S parameter COB de-embedding

Temperature-insensitive reading of a flash memory cell

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Journal of semiconductors 2023年第4期44卷 103-107页

作者： Weiyan Zhang Tao Yu Zhifeng Zhu Binghan Li School of Information Science and Technology ShanghaiTech UniversityShanghai 201210China Shanghai Huahong grace semiconductor Manufacturing corporation Shanghai 200125China

The temperature characteristics of the read current of the NOR embedded flash memory with a 1.5T-per-cell structure are theoretically analyzed and experimentally *** verify that for a cell programmed with a“10”state,the read current is either increasing,decreasing,or invariable with the temperature,essentially depending on the reading overdrive voltage of the selected bitcell,or its programming *** precisely controlling the programming strength and thus manipulating its temperature coefficient,we propose a new setting method for the reference cells that programs each of reference cells to a charge state with a temperature coefficient closely tracking tail data cells,thereby solving the current coefficient mismatch and improving the read window.

关键词： flash memory temperature coefficient reference cell flash array

Effect of STI-induced mechanical stress on leakage current in deep submicron CMOS devices

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Chinese Physics B 2007年第10期16卷 3104-3107页

作者：李睿俞柳江董业民王庆东 Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Graduate School of Chinese Academy of Sciences Beijing 100049 China grace semiconductor Manufacturing corporation Shanghai 201203 China

The shallow trench isolation （STI） induced mechanical stress significantly affects the CMOS device off-state leakage behaviour. In this paper we designed two types of devices to investigate this effect, and all leakage components, including sub-threshold leakage （Isub）, gate-induced-drain-leakage （/GIDL）, gate edge-direct-tunnelling leakage （IEDT） and band-to-band-tunnelling leakage （IBTBT） were analysed. For NMOS, Isub can be reduced due to the mechanical stress induced higher boron concentration in well region. However, the GIDL component increases simultaneously as a result of the high well concentration induced drain-to-well depletion layer narrowing as well as the shrinkage of the energy gap. For PMOS, the only mechanical stress effect on leakage current is the energy gap narrowing induced GIDL increase.

关键词： CMOS shallow trench isolation stress leakage gate-induced drain leakage

Nano-scale gap filling and mechanism of deposit-etch-deposit process for phase-change material

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Chinese Physics B 2012年第11期21卷 335-339页

作者：任万春刘波宋志棠向阳辉王宗涛张北超封松林 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-system and Information TechnologyChinese Academy of Sciences semiconductor Manufacturing International corporation University of the Chinese Academy of Sciences

Ge2Sb2Te5 gap filling is one of the key processes for phase-change random access memory manufacture. Physical vapor deposition is the mainstream method of Ge2Sb2Te5 film deposition due to its advantages of film quality, purity, and accurate composition control. However,the conventional physical vapor deposition process cannot meet the gap- filling requirement with the critical device dimension scaling down to 90 nm or below. In this study, we find that the deposit-etch-deposit process shows better gap-filling capability and scalability than the single-step deposition process, especially at the nano-scale critical dimension. The gap-filling mechanism of the deposit-etch-deposit process was briefly discussed. We also find that re-deposition of phase-change material from via the sidewall to via the bottom by argon ion bombardment during the etch step was a key ingredient for the final good gap filling. We achieve void-free gap filling of phase-change material on the 45-nm via the two-cycle deposit-etch-deposit process. We gain a rather comprehensive insight into the mechanism of deposit-etch-deposit process and propose a potential gap-filling solution for over 45-nm technology nodes for phase-change random access memory.

关键词： deposit-etch deposit process single step deposit gap filling re-deposition

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

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Journal of semiconductors 2015年第5期36卷 181-186页

作者：高丹刘波李莹宋志棠任万春李俊焘许震吕士龙朱南飞任佳栋詹奕鹏吴汉明封松林 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Micro-System and Information TechnologyChinese Academy of Sciences University of Chinese Academy of Sciences semiconductor Manufacturing International corporation

Phase change memory （PCM） has been regarded as a promising candidate for the next generation of nonvolatile memory. To decrease the power required to reset the PCM cell, titanium nitride （TIN） is preferred to be used as the bottom electrode of PCM due to its low thermal and suitable electrical conductivity. However, during the manufacture of PCM cell in 40 nm process node, abnormally high and discrete distribution of the resistance of TiN bottom electrode was found, which might be induced by the surface oxidation of TiN bottom electrode during the photoresist ashing process by oxygen plasma. In this work, we have studied the oxidation of TiN and found that with the increasing oxygen plasma ashing time, the thickness of the TiO2 layer became thicker and the state of the TiO2 layer changed from amorphous to crystalline, respectively. The resistance of TiN electrode contact chain with 4-5 nm TiO2 layer was confirmed to be almost three-orders of magnitude higher than that of pure TiN electrode, which led to the failure issue of PCM cell. We efficiently removed the oxidation TiO2 layer by a chemical mechanical polishing （CMP） process, and we eventually recovered the resistance of TiN bottom electrode from 1×10^5Ω/via back to 6×10^2 Ωvia and successfully achieved a uniform resistance distribution of the TiN bottom electrode.

关键词： PCM oxygen plasma ashing titanium nitride bottom electrode oxidation CMP

Effects of oxygen/nitrogen co-incorporation on regulation of growth and properties of boron-doped diamond films

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Chinese Physics B 2023年第11期32卷 609-615页

作者：刘东阳汤琨朱顺明张荣郑有炓顾书林 School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China The Shanghai Huahong grace semiconductor Manufacturing corporation Shanghai 201203China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China

Regulation with nitrogen and oxygen co-doping on growth and properties of boron doped diamond films is studied by using laughing gas as dopant. As the concentration of laughing gas(N2O/C) increases from 0 to 10%, the growth rate of diamond film decreases gradually, and the nitrogen-vacancy(NV) center luminescence intensity increases first and then weakens. The results show that oxygen in laughing gas has a strong inhibitory effect on formation of NV centers, and the inhibitory effect would be stronger as the concentration of laughing gas increases. As a result, the film growth rate and nitrogen-related compensation donor decrease, beneficial to increase the acceptor concentration(~3.2×10^(19)cm^(-3)) in the film. Moreover, it is found that the optimal regulation with the quality and electrical properties of boron doped diamond films could be realized by adding appropriate laughing gas, especially the hole mobility(~700cm^(2)/V·s), which is beneficial to the realization of high-quality boron doped diamond films and high-level optoelectronic device applications in the future.

关键词： boron doped diamond nitrogen and oxygen co-doping crystal quality Hall effect measurement acceptor doping concentration

Slope-integrated methodology for OPC model calibration

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Slope-integrated methodology for OPC model calibration