Effect of oxygen on regulation of properties of moderately boron-doped diamond films

作     者：Dong-Yang Liu Li-Cai Hao Wei-Kang Zhao Zi-Ang Chen Kun Tang Shun-Ming Zhu Jian-Dong Ye Rong Zhang You-Dou Zheng Shu-Lin Gu 刘东阳;郝礼才;赵伟康;陈子昂;汤琨;朱顺明;叶建东;张荣;郑有炓;顾书林

作者机构：School of Electronic Science and EngineeringNanjing UniversityNanjing 210093China The Shanghai Huahong Grace Semiconductor Manufacturing CorporationShanghai 201203China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving ElectronicsNanjing UniversityNanjing 210093China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第12期

页      面：591-597页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant Nos.2018YFB0406502,2017YFF0210800,and 2017YFB0403003) the National Natural Science Foundation of China(Grant Nos.61774081,61775203,61574075,61974059,61674077,and 91850112) the State Key Research and Development Project of Jiangsu,China(Grant No.BE2018115) State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices(Grant No.2017KF001) Anhui University Natural Science Research Project(Grant No.KJ2021A0037) 

主　　题：moderately boron doped diamond crystal quality suppression effect boron and oxygen complex structures 

摘      要：Regulation of oxygen on properties of moderately boron-doped diamond films is fully *** show that,with adding a small amount of oxygen(oxygen-to-carbon ratio5.0%),the crystal quality of diamond is improved,and a suppression effect of residual nitrogen is *** increasing ratio of O/C from 2.5%to 20.0%,the hole concentration is firstly increased then *** change of hole concentration is also ***,the results of Hall effect measurement with temperatures from 300 K to 825 K show that,with adding a small amount of oxygen,boron and oxygen complex structures(especially B_(3)O and B_(4)O)are formed and exhibit as shallow donor in diamond,which results in increase of donor *** further increase of ratio of O/C,the inhibitory behaviors of oxygen on boron leads to decrease of acceptor concentration(the optical emission spectroscopy has shown that it is decreased with ratio of O/C more than 10.0%).This work demonstrates that oxygen-doping induced increasement of the crystalline and surface quality could be restored by the co-doping with *** technique could achieve boron-doped diamond films with both high quality and acceptable hole concentration,which is applicable to electronic level of usage.