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Hole mobility enhancement in monolayer WSe2 p-type transistors through molecular doping

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Science China(Information Sciences) 2024年第6期67卷 207-213页

作者： Shiyuan LIU Xiong XIONG Xin WANG Xinhang SHI Ru HUANG Yanqing WU School of integrated Circuits and Beijing Advanced Innovation center for integrated Circuits Peking University Wuhan National High Magnetic Field center and School of integrated Circuits Huazhong University of Science and Technology

Two-dimensional （2D） transition metal dichalcogenide （TMDC） semiconductor materials exhibit extraordinary electrical properties,holding promise for the realization of next-generation complementary metal-oxide-semiconductor （CMOS） devices at ultimate ***,constrained by effective device doping strategies,the hole mobility and device performance of tungsten diselenide （WSe2） p-type transistors,especially monolayer chemical vapor deposition （CVD）-grown WSe2,have not met *** this paper,an effective performance enhancement of monolayer WSe2p-type transistor was achieved through a molecular doping *** monolayer WSe2directly on SiO2back-gated substrates and leveraging energy band alignment design,4-nitrobenzenediazonium tetrafluoroborate （4-NBD） molecular dopant with a concentration of 10 m M was utilized to modulate the Fermi level position of monolayer WSe2for hole *** devices demonstrated a more than 98%increase in hole mobility,reaching up to 97 cm2·V-1·s-1while maintaining the current on/off ratio of *** p-type WSe2transistors with 1μm channel length exhibit a high drive current surpassing 176μA·μm-1,exceeding previous CVD-WSe2devices with similar channel *** straightforward and effective approach to improving the electrical performance of WSe2transistors paves the way for advanced logic technologies based on transition metal dichalcogenide semiconductors.

关键词： CVD-grown WSe$_2$ molecular doping 4-NBD p-type transistors hole mobility

Performance improvement of β-Ga2O3 SBD-based rectifier with embedded microchannels in ceramic substrate

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Science China(Information Sciences) 2024年第5期67卷 341-342页

作者： Wen HONG Chao ZHANG Fang ZHANG Xuefeng ZHENG Xiaohua MA Yue HAO State Key Laboratory of Wide-Bandgap semiconductor Devices and integrated technology School of MicroelectronicsXidian University

With the development of integrated circuits, there is a growing demand for higher power devices [1]. Gallium oxide（Ga2O3） holds promise for high power devices due to its wide bandgap and high breakdown electric field strength [2].However, its low thermal conductivity induces severe selfheating effects, limiting its performance and ***, effective thermal management techniques are urgently needed for Ga2O3devices.

关键词： Gallium compounds

Entropy variances of pure coherent states in the diffusion channel

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Chinese Physics B 2024年第9期33卷 384-388页

作者： Wei-Feng Wu Yong Fang Peng Fu School of Mechanical and Electrical Engineering Chizhou UniversityChizhou 247000China Anhui research center of semiconductor Industry Generic technology Chizhou 247000China

Using the operator correspondence of the real and fictious modes in the thermo entangled state representation, wesolve the quantum master equation describing the diffusion channel and obtain the Kraus operator-sum representation ofits analytical solution. we find that the pure coherent states evolve into the new mixed thermal superposed states in thediffusion channel. Also, we investigate the statistical properties of the initial coherent states and their entropy evolutions inthe diffusion channel, and find that the entropy evolutions are only related to the decay time and without the amplitudes ofthe initial coherent states.

关键词： entangled state representation diffusion channel coherent state entropy evolution

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Investigation of operation and degradation mechanisms in ZnTeSe blue quantum-dot light-emitting diodes by identifying recombination zone

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Nano research 2024年第7期17卷 6527-6533页

作者： Oul Cho Sujin Park Hogeun Chang Jiwhan Kim Jaekwon Kim Sungwoo Kim Taehyung Kim Jeonghun Kwak Department of Electrical and Computer Engineering Inter-university Semiconductor Research Centerand Soft Foundry InstituteSeoul National UniversitySeoul 08826Republic of Korea Material research center Samsung Advanced Institute of TechnologySuwonGyeonggi-do 16419Republic of Korea

ZnTeSe quantum dots(QDs),recognized as promising eco-friendly blue electroluminescent emitters,remain under-explored in light-emitting diode(LED)***,to elucidate the operation and degradation mechanisms of ZnTeSe blue QD-LEDs,stacked ZnTeSe QD layers with discernable luminescence are designed by varying Te doping concentrations,and the recombination zones(RZs)of the blue QD-LEDs are *** RZs are identified near the hole-transport layer(HTL),confirmed by angular-dependent electroluminescence measurements and optical *** addition,in order to investigate carrier dynamics in the process of recombination,the transient electroluminescence(tr-EL)signals of the dichromatic QD-LEDs are *** a result,it is inferred that the RZ initially formed near the electron-transport layer(ETL)due to the high injection barriers of ***,due to the fast electron mobility,the RZ shifts toward the HTL as the operating current *** the device lifetime tests,the RZ remains stationary while the photoluminescence(PL)corresponding to the RZ undergoes a substantial decrease,indicating that the degradation is accelerated by the concentrated *** this study contributes to a deeper understanding of the operational mechanisms of ZnTeSe blue QD-LEDs.

关键词： quantum dots light-emitting diodes degradation recombination zones carrier dynamics

Heterointerface Engineering-Induced Oxygen Defects for the Manganese Dissolution Inhibition in Aqueous Zinc Ion Batteries

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Energy & Environmental Materials 2024年第3期7卷 112-122页

作者： Wentao Qu Yong Cai Baohui Chen Ming Zhang Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics&Devices School of Physics and ElectronicsHunan UniversityChangsha 410082China Engineering research center of Advanced semiconductor technology and Application of Ministry of Education&Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China Changsha semiconductor technology and Application Innovation research Institute College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China State Key Laboratory of Disaster Prevention&Reduction for Power Grid Transmission and Distribution Equipment(Hunan Electric Power Corporation Disaster Prevention and Reduction center) Changsha 410007China

Manganese-based material is a prospective cathode material for aqueous zinc ion batteries(ZIBs)by virtue of its high theoretical capacity,high operating voltage,and low ***,the manganese dissolution during the electrochemical reaction causes its electrochemical cycling stability to be *** this work,heterointerface engineering-induced oxygen defects are introduced into heterostructure MnO_(2)(δa-MnO_(2))by in situ electrochemical activation to inhibit manganese dissolution for aqueous zinc ion ***,the heterointerface between the disordered amorphous and the crystalline MnO_(2)ofδa-MnO_(2)is decisive for the formation of oxygen *** the experimental results indicate that the manganese dissolution ofδa-MnO_(2)is considerably inhibited during the charge/discharge *** analysis indicates that the oxygen defect regulates the electronic and band structure and the Mn-O bonding state of the electrode material,thereby promoting electron transport kinetics as well as inhibiting Mn ***,the capacity ofδa-MnO_(2)does not degrade after 100 cycles at a current density of 0.5 Ag^(-1)and also 91%capacity retention after 500cycles at 1 Ag^(-1).This study provides a promising insight into the development of high-performance manganese-based cathode materials through a facile and low-cost strategy.

关键词： electrochemical activation heterointerface manganese dissolution inhibition oxygen defects zinc ion batteries

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Recent Advances in Patterning Strategies for Full‑Color Perovskite Light‑Emitting Diodes

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Nano-Micro Letters 2024年第3期16卷 99-137页

作者： Gwang Heon Lee Kiwook Kim Yunho Kim Jiwoong Yang Moon Kee Choi Graduate School of semiconductor Materials and Devices Engineering Center for Future Semiconductor Technology(FUST)Ulsan National Institute of Science and Technology(UNIST)Ulsan 44919Republic of Korea Department of Energy Science and Engineering Daegu Gyeongbuk Institute of Science and Technology(DGIST)Daegu 42988Republic of Korea Energy Science and Engineering research center Daegu Gyeongbuk Institute of Science and Technology(DGIST)Daegu 42988Republic of Korea Department of Materials Science and Engineering Ulsan National Institute of Science and Technology(UNIST)Ulsan 44919Republic of Korea center for Nanoparticle research Institute for Basic Science(IBS)Seoul 08826Republic of Korea

Metal halide perovskites have emerged as promising light-emitting materials for next-generation displays owing to their remarkable material characteristics including broad color tunability,pure color emission with remarkably narrow bandwidths,high quantum yield,and solution *** recent advances have pushed the luminance efficiency of monochromic perovskite light-emitting diodes(PeLEDs)to their theoretical limits,their current fabrication using the spincoating process poses limitations for fabrication of full-color *** integrate PeLEDs into full-color display panels,it is crucial to pattern red–green–blue(RGB)perovskite pixels,while mitigating issues such as cross-contamination and reductions in luminous ***,we present state-of-the-art patterning technologies for the development of full-color ***,we highlight recent advances in the development of efficient ***,we discuss various patterning techniques of MPHs(i.e.,photolithography,inkjet printing,electron beam lithography and laserassisted lithography,electrohydrodynamic jet printing,thermal evaporation,and transfer printing)for fabrication of RGB pixelated *** patterning techniques can be classified into two distinct approaches:in situ crystallization patterning using perovskite precursors and patterning of colloidal perovskite *** review highlights advancements and limitations in patterning techniques for PeLEDs,paving the way for integrating PeLEDs into full-color panels.

关键词： Perovskite Light-emitting diode Full-color display High-resolution patterning Electroluminescence

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Mixed-dimensional stacked nanocomposite structures for a specific wavelength-selectable ambipolar photoresponse

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Nano research 2024年第6期17卷 5549-5558页

作者： Young Jae Park Jaeho Shim Joo Song Lee Kyu Seung Lee Ji-Yeon Kim Kang Bok Ko Sang-Youp Yim Seongjun Kim Hoon-Kyu Shin Donghee Park Yong Ju Yun Dong Ick Son Institute of Advanced Composite Materials Korea Institute of Science and TechnologyJeollabuk-do 55324Republic of Korea National Institute for Nanomaterials technology Pohang University of Science and TechnologyGyeongsangbuk-do 37673Republic of Korea Department of semiconductor Science and technology Semiconductor Physics Research CenterJeonbuk National UniversityJeonju 54896Republic of Korea Advanced Photonics research Institute Gwangju Institute of Science and TechnologyGwangju 61005Republic of Korea center for Opto-Electronic Materials and Devices Post-Silicon Semiconductor InstituteKorea Institute of Science and TechnologySeoul 02792Republic of Korea Graduate School of Energy and Environment(KU-KIST Green School) Korea UniversitySeoul 02841Republic of Korea KIST School Department of Nanomaterials and Nano ScienceUniversity of Science and Technology(UST)Daejeon 34113Republic of Korea

Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to the potential to generate new optical ***,we report on the unique optical characteristics of a devices with mixed dimensional vertically stacked structures based on tungsten diselenide(WSe_(2))/CdSeS QDs monolayer/molybdenum disulfide(MoS_(2))(2D/0D/2D).Specifically,it exhibits an ambipolar photoresponse characteristic,with a negative photoresponse observed in the 400-600 nm wavelength range and a positive photoresponse appeared at 700 nm *** resulted in the high negative responsivity of up to 52.22 mA·W^(−1)under 400 nm,which is 163 times higher than that of the photodetector without CdSeS *** also demonstrated the negative photoresponse,which could be due to increased carrier collision probability and non-radiative *** modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent ***,we discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum *** study revealed interesting phenomenon in the mixed low-dimensional stacked structure and paved the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.

关键词： mixed-dimension quantum dot heterostructure photodetector ambipolar photoresponse

Learning to represent 2D human face with mathematical model

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CAAI Transactions on Intelligence technology 2024年第1期9卷 54-68页

作者： Liping Zhang Weijun Li Linjun Sun Lina Yu Xin Ning Xiaoli Dong AnnLab Institute of SemiconductorsChinese Academy of SciencesBeijingChina center of Materials Science and Optoelectronics Engineering School of Integrated CircuitsUniversity of Chinese Academy of SciencesBeijingChina Beijing Key Laboratory of semiconductor Neural Network Intelligent Sensing and Computing technology BeijingChina

How to represent a human face pattern?While it is presented in a continuous way in human visual system,computers often store and process it in a discrete manner with 2D arrays of *** authors attempt to learn a continuous surface representation for face image with explicit ***,an explicit model(EmFace)for human face representation is pro-posed in the form of a finite sum of mathematical terms,where each term is an analytic function ***,to estimate the unknown parameters of EmFace,a novel neural network,EmNet,is designed with an encoder-decoder structure and trained from massive face images,where the encoder is defined by a deep convolutional neural network and the decoder is an explicit mathematical expression of *** authors demonstrate that our EmFace represents face image more accurate than the comparison method,with an average mean square error of 0.000888,0.000936,0.000953 on LFW,IARPA Janus Benchmark-B,and IJB-C *** results show that,EmFace has a higher representation performance on faces with various expressions,postures,and other ***,EmFace achieves reasonable performance on several face image processing tasks,including face image restoration,denoising,and transformation.

关键词： artificial neural networks face analysis image processing mathematics computing

Highly efficient 1D p-Te/2D n-Bi_(2)Te_(3) heterojunction self-driven broadband photodetector

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Nano research 2024年第3期17卷 1864-1874页

作者： Chenchen Zhao Dongbo Wang Jiamu Cao Zhi Zeng Bingke Zhang Jingwen Pan Donghao Liu Sihang Liu Shujie Jiao Tianyuan Chen Gang Liu Xuan Fang Liancheng Zhao Jinzhong Wang School of Materials Science and Engineering Harbin Institute of TechnologyHarbin 150001China School of Astronautics Harbin Institute of TechnologyHarbin 150001China center for High Pressure Science and technology Advanced research Shanghai 201203China State Key Laboratory of High Power semiconductor Lasers Changchun University of Science and TechnologyChangchun 130022China

Broadband photodetectors with self-driven functions have attracted intensive scientific interest due to their low energy consumption and high optical ***,high-performance broadband self-driven photodetectors are still a significant challenge due to the complex fabrication processes,environmental toxicity,high production costs of traditional 3D semiconductor materials and sharply raised contact resistance,severe interfacial recombination of 2D materials and 2D/3D mixed dimension ***,1D p-Te/2D n-Bi_(2)Te_(3) heterojunctions are constructed by the simple and low-cost hydrothermal method.1D p-Te/2D n-Bi_(2)Te_(3) devices are applied in photoelectrochemical(PEC)photodetectors,with their high performance attributed to the good interfacial contacts reducing interface *** device demonstrated a broad wavelength range(365–850 nm)with an Iph/Idark as high as *** R_(i),D^(*),and external quantum efficiency(EQE)values of the device were as high as 12.07 mA/W,5.87×10^(10) Jones,and 41.05%,respectively,which were significantly better than the performance of the prepared Bi_(2)Te_(3) and Te devices.A comparison of the freshly fabricated device and the device after 30 days showed that 1D p-Te/2D n-Bi_(2)Te_(3) had excellent stability with only 18.08%decay of *** is anticipated that this work will provide new emerging material for future design and preparation of a high-performance self-driven broadband photodetector.

关键词： topological insulating states interfacial recombination self-driven 1D p-Te/2D n-Bi_(2)Te_(3) photodetector