Investigation of operation and degradation mechanisms in ZnTeSe blue quantum-dot light-emitting diodes by identifying recombination zone
作者机构：Department of Electrical and Computer EngineeringInter-university Semiconductor Research Centerand Soft Foundry InstituteSeoul National UniversitySeoul 08826Republic of Korea Material Research CenterSamsung Advanced Institute of TechnologySuwonGyeonggi-do 16419Republic of Korea
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2024年第17卷第7期
页 面：6527-6533页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0703[理学-化学] 0702[理学-物理学]
基 金：Samsung Advanced Institute of Technology SAIT
主 题：quantum dots light-emitting diodes degradation recombination zones carrier dynamics
摘 要：ZnTeSe quantum dots(QDs),recognized as promising eco-friendly blue electroluminescent emitters,remain under-explored in light-emitting diode(LED)***,to elucidate the operation and degradation mechanisms of ZnTeSe blue QD-LEDs,stacked ZnTeSe QD layers with discernable luminescence are designed by varying Te doping concentrations,and the recombination zones(RZs)of the blue QD-LEDs are *** RZs are identified near the hole-transport layer(HTL),confirmed by angular-dependent electroluminescence measurements and optical *** addition,in order to investigate carrier dynamics in the process of recombination,the transient electroluminescence(tr-EL)signals of the dichromatic QD-LEDs are *** a result,it is inferred that the RZ initially formed near the electron-transport layer(ETL)due to the high injection barriers of ***,due to the fast electron mobility,the RZ shifts toward the HTL as the operating current *** the device lifetime tests,the RZ remains stationary while the photoluminescence(PL)corresponding to the RZ undergoes a substantial decrease,indicating that the degradation is accelerated by the concentrated *** this study contributes to a deeper understanding of the operational mechanisms of ZnTeSe blue QD-LEDs.
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