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Fabrication of Nanoscale Step Height Structure Using Atomic Layer Deposition Combined with Wet Etching

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Chinese Journal of Mechanical Engineering 2016年第1期29卷 91-97页

作者： WANG Chenying YANG Shuming JING Weixuan REN Wei LIN Qijing ZHANG Yijun JIANG Zhuangde State Key laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University electronic materials research laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric Research Xi'an Jiaotong University

The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.

关键词： atomic layer deposition (ALD) wet etching step height

Combustion synthesis and luminescence properties of Ca4Y6（SiO4）6O:Eu3+ red phosphor for white LEDs

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Journal of Rare Earths 2013年第10期31卷 957-961页

作者：孙志华汪敏强宋孝辉蒋自强 electronic materials research laboratory Key Laboratory of the Ministry of Education Xi′an Jiaotong University International center for dielectric research Xi'an Jiaotong University School of materials Science and Engineering Chang'an University

Eu3+activated Ca4Y6(SiO4)6O phosphors were prepared by combustion synthesis method,and their morphologies and luminescent properties were *** scanning electron microscopy(FSEM)confirmed that the crystallite sizes of nanoparticles with narrow diameter ranging from 30 to 60 *** excitation spectra of Ca4Y6(SiO4)6O:Eu3+showed that there existed two strong excitation bands at around 399 nm(7F0→5L6)and 469 nm(7F0→5D2),which were consistent with the output wavelengths of near-UV and blue LEDs,*** emission spectra of Ca4Y6(SiO4)6O:Eu3+were dominant by a red peak located at 614 nm due to the5D0→7F2transition of Eu3+.With the increase of Eu3+concentration,the luminescence intensity of the red phosphor reached maximum and then *** optimum concentration for Eu3+in Ca4Y6(SiO4)6O was 21 mol.%.

关键词： Ca4Y6(SiO4)6O:Eu3+ combustion synthesis luminescent characteristics white LED rare earths

Bifunctional bridging capping layer enables 24.5% efficiency of perovskite solar cells with polymer-based hole transport materials

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Science China Chemistry 2025年第1期 350-359页

作者： Can Zhu Yiyang Wang Lei Meng Beibei Qiu Jing Li Shucheng Qin Ke Hu Xin Jiang Wenbin Lai Minchao Liu Zhe Liu Chenxing Lu Jinyuan Zhang Yongfang Li Beijing National laboratory for Molecular Sciences CAS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences School of Chemical Science University of Chinese Academy of Sciences Key laboratory of Solid State Optoelectronic Devices of Zhejiang Province College of Physics and Electronic Information Engineering Zhejiang Normal University Key laboratory of Photochemical Conversion and Optoelectronic materials Technical Institute of Physics and ChemistryChinese Academy of Sciences laboratory of Advanced Optoelectronic materials College of Chemistry Chemical Engineering and Materials ScienceSoochow University

Developing a bridge capping layer between perovskite and hole transport layer materials（HTMs） in the n-i-p perovskite solar cells（pero-SCs） is an effective approach to modify the morphology of HTMs and passivate the perovskite ***, we select the quinoxaline-based bifunctional passivation agent, quinoxalin-6-yl-methylamine hydrochloride（Qx MACl）,as the bridging layer, and a D-A copolymer PBQ12 containing the same quinoxaline unit as an HTM for the n-i-p pero-SCs. Due to the π-π stacking among the common quinoxaline units in the bridge layer and HTM, Qx MACl induces the π-π stacking of the PBQ12 film and improves the film morphology of HTMs with better conductivity. Additionally, Qx MACl can effectively passivate the perovskite surface, and PBQ12 possesses appropriate energy levels and high hole mobility. The pero-SCs based on FAPbI3with PBQ12/Qx MACl treatment showed a higher power conversion efficiency（PCE） of 24.05% and outstanding stability, maintaining 95.4% and 92.1% of its initial PCE after 750 h of storage and after over 800 h of thermal annealing at 85 °C, respectively. To further enhance the PCE of the PBQ12/Qx MACl-based devices, we developed a non-metal ion dopant for the PBQ12 HTM. Through trace doping of PBQ12 HTM by the non-metal ion dopant, the PCE of the PBQ12/Qx MACl-based devices reached 25.24%（the calibrated PCE of 24.55% by the National Institute of Metrology, China）.

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Enhanced photoluminescence property of sulfate ions modified YAG:Ce^(3+) phosphor by co-precipitation method

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Journal of Rare Earths 2017年第3期35卷 217-222页

作者：阙美丹阙文修周婷邵金友孔令兵 electronic materials research laboratory International Center for Dielectric ResearchKey Laboratory of the Ministry of EducationSchool of Electronic & Information EngineeringState Key Laboratory for Manufacturing Systems EngineeringXi’an Jiaotong University School of materials Science and Engineering Nanyang Technological University

The sulfate ions modified YAG：Ce^（3＋） phosphors were prepared by co-precipitation method and characterized by X-ray diffraction,transmission electron microscopy,and *** of sulfate ions on the photoluminescence（PL） property of the as-prepared YAG：Ce^（3＋） phosphors were studied,with sodium dodecyl sulfate（SDS） being added to R^（3＋）（Ce^（3＋）,Y^（3＋）,Al^（3＋）） *** indicated that pure YAG：Ce^（3＋） phosphors with different ratios of sulfate ions could be easily obtained by calcining the as-synthesized precursor at 950 ℃ for 2 h,the YAG：Ce^（3＋） phosphors with an optimal mass ratio of 3.5 wt.%SDS had the highest emission intensity and the best dispersion behavior,and the fluorescence decay of the as-obtained YAG：Ce^（3＋） phosphors was related to the lattice defect,reabsorption and cross ***,thermal quenching properties of the YAG：Ce^（3＋） phosphors and the YAG：Ce^（3＋） phosphors with 3.5 wt.%SDS were also discussed,indicating that the YAG：Ce^（3＋） with SDS phosphors could have potential applications in the daylight LEDs or warm white LEDs.

关键词： YAG Ce3+ phosphor sodium dodecyl sulfate uniform dispersion luminescence properties rare earths

Second-order temporal interference of two independent light beams at an asymmetrical beam splitter

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Chinese Physics B 2017年第1期26卷 187-193页

作者： Jianbin Liu Jingjing Wang Zhuo Xu electronic materials research laboratory Key Laboratory of the Ministry of Education Xi'an Jiaotong University Xi'an 710049 China International center for dielectric research Xi'an Jiaotong University Xi'an 710049 China

The second-order temporal interference of classical and nonclassical light at an asymmetrical beam splitter is discussed based on two-photon interference in Feynman＇s path integral theory. The visibility of the second-order interference pattern is determined by the properties of the superposed light beams, the ratio between the intensities of these two light beams, and the reflectivity of the asymmetrical beam splitter. Some requirements about the asymmetrical beam splitter have to be satisfied in order to ensure that the visibility of the second-order interference pattern of nonclassical light beams exceeds the classical limit. The visibility of the second-order interference pattern of photons emitted by two independent single-photon sources is independent of the ratio between the intensities. These conclusions are important for the researches and applications in quantum optics and quantum information when an asymmetrical beam splitter is employed.

关键词： two-photon interference Feynman's path integral theory asymmetrical beam splitter

Enhancing the performance of poly(3-hexylthiophene)/ZnO nanorod arrays based hybrid solar cells through incorporation of a third component

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Science China(Physics,Mechanics & Astronomy) 2014年第7期57卷 1289-1298页

作者： ZHONG Peng QUE WenXiu ZHANG Jin YUAN Yuan LIAO YuLong YIN XingTian KONG LingBing HU Xiao electronic materials research laboratory School of Electronic and Information Engineering Xi'an Jiaotong University International center for dielectric research Xi'an Jiaotong University School of materials Science and Engineering Nanyang Technological University

Sparse ZnO nanorod arrays(NRAs)are fabricated on transparent conducting oxide coated glass substrates by using a modified liquid phase epitaxial growth *** adjusting the polymer concentrations and the spin-coating parameters,full infiltration of poly(3-hexylthiophene)(P3HT)into the as-prepared ZnO NRAs is achieved at 130°C in vacuum.A third component is incorporated into the P3HT/ZnO NRAs ordered bulk heterojunctions(BHJs)either through ZnO surface modification with N719dye or CdS shell layer or by inclusion of a fullerene derivative into the P3HT *** results indicate that performances of the hybrid solar cells are improved greatly with the incorporation of a third ***,the working principles of these third components differ from one another,according to morphology,structure,optical property,charge transfer and interfacial properties of the composite *** ideal device architecture for hybrid solar cells based on P3HT/ZnO NRAs ordered BHJs is proposed,which can be used as a guidance to further increase the power conversion efficiency of such solar cells.

关键词： hybrid solar cell zinc oxide conjugated polymer surface modification bulk heterojunction power conversion efficiency

Constructing Donor–Acceptor‑Linked COFs Electrolytes to Regulate Electron Density and Accelerate the Li^(+)Migration in Quasi‑Solid‑State Battery

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Nano-Micro Letters 2025年第1期17卷 456-471页

作者： Genfu Zhao Hang Ma Conghui Zhang Yongxin Yang Shuyuan Yu Haiye Zhu Yongjiang Sun Hong Guo School of materials and Energy International Joint Research Center for Advanced Energy Materials of Yunnan ProvinceYunnan UniversityKunming 650091People’s Republic of China Yunnan Yuntianhua Co. LtdR&D CenterKunming 650228People’s Republic of China Southwest United Graduate School Kunming 650091People’s Republic of China

Regulation the electronic density of solid-state electrolyte by donor–acceptor(D–A)system can achieve highly-selective Li^(+)transportation and conduction in solid-state Li metal *** study reports a high-performance solid-state electrolyte thorough D–A-linked covalent organic frameworks(COFs)based on intramolecular charge transfer *** other reported COFbased solid-state electrolyte,the developed concept with D–A-linked COFs not only achieves electronic modulation to promote highly-selective Li^(+)migration and inhibit Li dendrite,but also offers a crucial opportunity to understand the role of electronic density in solid-state Li metal *** introduced strong electronegativity F-based ligand in COF electrolyte results in highlyselective Li^(+)(transference number 0.83),high ionic conductivity(6.7×10^(-4)S cm^(−1)),excellent cyclic ability(1000 h)in Li metal symmetric cell and high-capacity retention in Li/LiFePO_(4)cell(90.8%for 300 cycles at 5C)than substituted C-and N-based *** is ascribed to outstanding D–A interaction between donor porphyrin and acceptor F atoms,which effectively expedites electron transferring from porphyrin to F-based ligand and enhances Li^(+)***,we anticipate that this work creates insight into the strategy for accelerating Li^(+)conduction in high-performance solid-state Li metal batteries through D–A system.

关键词： electronic modulation engineering Donor-acceptor-linked covalent organic frameworks Quasi-solid-state Li metal battery

Effect of annealing temperature of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 gate insulator on performance of ZnO based thin film transistors

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Journal of Semiconductors 2016年第7期37卷 76-81页

作者：叶伟任巍史鹏蒋庄德 electronic materials research laboratory Key Laboratory of the Ministry of Education & International Center for Dielectric ResearchXi'an Jiaotong University State Key laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University

The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.

关键词： pyrochlore BZN thin films ZnO-TFTs RF magnetron sputtering annealing temperature

Recent development of E-field control of interfacial magnetism in multiferroic heterostructures

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Nano research 2023年第4期16卷 5983-6000页

作者： Yuxin Cheng Shishun Zhao Ziyao Zhou Ming Liu The electronic materials research laboratory Key Laboratory of the Ministry of Education&International Center for Dielectric ResearchSchool of Electronic Science and EngineeringState Key Laboratory for Mechanical Behavior of Materialsthe International Joint Laboratory for Micro/Nano Manufacturing and Measurement TechnologyXi'an Jiaotong UniversityXi'an 710049China

The full E-field control of multiferroic interfacial magnetism is a long-standing challenge for micro-electromechanical systems(MEMS)and has the potential to transform electronics operation *** scaling down conventional complementary metal-oxide semiconductor(CMOS)devices,increased heating dissipation becomes a top *** the highly correlated ferroic orders,notably the strongly coupled interfacial magnetoelectric(ME)interactions,may lead to devices beyond *** devices use the electric field to regulate magnetization,which opens up the prospect of downsizing,improved performance,and lower power *** broadly survey this tremendous scope within the last five years,this review summarizes advances in voltage control of interfacial magnetism(VCIM)with various material system selection;controlling effects with different gating methods are also *** classic mechanisms are demonstrated:strain,exchange bias,orbital reconstruction,and the electrostatic and *** encouraging photovoltaic approach is also *** method’s capabilities and application scenarios are *** of the comprehensive gating results of different magnetic coupling effects such as perpendicular magnetic anisotropy(PMA)and Ruderman-Kittel-Kasuya-Yosida(RKKY)are additionally *** last,controlling of skyrmions and two-dimensional(2D)material magnetization is summarized,indicating that E-field gating offers a universal approach with few limitations for material *** results point to potential for E-field control interfacial magnetism and predict significant future advancements for spintronics.

关键词： multiferroic magnetoelectric coupling strain charge photovoltaic