Effect of annealing temperature of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 gate insulator on performance of ZnO based thin film transistors

作     者：叶伟 任巍 史鹏 蒋庄德 

作者机构：Electronic Materials Research LaboratoryKey Laboratory of the Ministry of Education & International Center for Dielectric ResearchXi'an Jiaotong University State Key Laboratory for Manufacturing Systems EngineeringXi'an Jiaotong University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2016年第37卷第7期

页      面：76-81页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Nos.51332003,51202184) the International Science&Technology Cooperation Program of China(Nos.2010DFB13640,2011DFA51880) the "111 Project" of China(No.B14040) 

主　　题：pyrochlore BZN thin films ZnO-TFTs RF magnetron sputtering annealing temperature 

摘      要：The bottom-gate structure ZnO based thin film transistors （ZnO-TFTs） using Bi1.5Zn1.0Nb1.507 （BZN） thin films as gate insulator were fabricated on Pt/SiO2/Si substrate by radio frequency magnetic sputtering. We investigated the effect of annealing temperature at 300, 400, and 500℃ on the performance of BZN thin films and ZnO-TFTs. XRD measurement confirmed that BZN thin films were amorphous in nature. BZN thin films annealed at 400℃ obtain the high capacitance density of 249 nF/cm2, high dielectric constant of 71, and low leakage current density of 10^-7 A/cm2 ordoff current ratio and field effect mobility of ZnO-TFTs annealed at 400℃ are approximately one order of magnitude and two times, respectively higher than that of ZnO-TFTs annealed at 300℃. When the annealing temperature is 400℃, the electrical performance of ZnO-TFTs is enhanced remarkably. Devices obtain a low sub-threshold swing of 470 mV/dec and surface states density of 3.21×10^12cm^-2.