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In-fiber photoelectric device based on graphene-coated tilted fiber grating

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光电科学(英文) 2023年第6期2卷 22-31页

作者： Biqiang Jiang Yueguo Hou Jiexing Wu Yuxin Ma Xuetao Gan Jianlin Zhao Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Basic Discipline(Liquid Physics)Research CenterSchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China

Graphene and related two-dimensional materials have attracted great research interests due to prominently optical and electrical properties and flexibility in integration with versatile photonic ***,we report an in-fiber photoelec-tric device by wrapping a few-layer graphene and bonding a pair of electrodes onto a tilted fiber Bragg grating(TFBG)for photoelectric and electric-induced thermo-optic *** transmitted spectrum from this device consists of a dense comb of narrowband resonances that provides an observable window to sense the photocurrent and the electrical injection in the graphene *** device has a wavelength-sensitive photoresponse with responsivity up to 11.4 A/W,allowing the spectrum analysis by real-time monitoring of photocurrent *** on the thermal-optic effect of electrical injection,the graphene layer is energized to produce a global red-shift of the transmission spectrum of the TF-BG,with a high sensitivity approaching 2.167×10^(4)nm/A^(2).The in-fiber photoelectric device,therefore as a powerful tool,could be widely available as off-the-shelf product for photodetection,spectrometer and current sensor.

关键词： tilted fiber grating photoelectric device graphene photoelectric conversion thermo-optic switching

Enhanced desulfurization performance of hybrid membranes using embedded hierarchical porous SBA-15

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Frontiers of Chemical Science and Engineering 2020年第4期14卷 661-672页

作者： Ye Zhang Jian Song Josue Quispe Mayta Fusheng Pan Xue Ga Mei Li Yimeng Song Meidi Wang Xingzhong Cao Zhongyi Jiang School of Chemical Engineering and Technology Tianjin UniversityTianjin 300072China Collaborative Innovation Center of Chemical Science and Engineering(Tianjin) Tianjin 300072China Multi-discipline Research Division Institute of High Energy PhysicsChinese Academy of SciencesBejing 100049China

The utilization of materials with a hierarchical porous structure as multi-functional additives is highly attractive in the preparation of hybrid *** this study,novel hybrid membranes are designed by embed-ding hierarchical porous Santa Barbara Amorphous 15(SBA-15)with a dual-pore architecture(micropores and mesopores)for pervaporation *** SBA-15 with cylindrical mesopores provides molecular transport expressways to ensure improved permeability,while micropores on the wall have molecular sieving effects that are essential for the enhancement of permselectivity of thiophene *** thiophene/n-octane mixture as a model system,the hybrid membrane with embedded 6 wt-%SBA-15 exhibits optimal pervaporation desulfurization performance with a permeation flux of 22.07 kg·m^-2·h^-1 and an enrichment factor of ***,the detailed structure and properties of hybrid membranes are systematically *** study demonstrates the immense potential of hierarchical porous materials as additives in membranes to simultaneously increase permeability and permselectivity.

关键词： hybrid membranes hierarchical porous SBA-15 sieving effect pervaporation desulfurization

Growth and Characterization of the Laterally Enlarged Single Crystal Diamond Grown by Microwave Plasma Chemical Vapor Deposition

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Chinese physics Letters 2018年第7期35卷 122-125页

作者：任泽阳张金风张进成许晟瑞张春福苏凯李姚郝跃 State Key discipline Laboratory of Wide Band-Gap Semiconductor Technology School of MicroelectronicsXidian University

Laterally enlarged single crystal diamond is grown on （001） diamond substrates by microwave plasma chemical vapor deposition. Based on the largest side-to-side width of the seed of 7.5 mm, we achieve the as-grown epilayer with the width of about 10mm between the same two sides. The luminescence difference between the broadened part of the single crystal diamond and the vertically epitaxial part is investigated by characterizing the vertical cross section of the sample, and the possible growth mechanism is suggested. Vertical epitaxy on the top （001） surface and lateral growth on the side surfaces occur simultaneously, and thus the growth fronts along the two directions adjoin and form a coalescence zone extending from the edge of the substrate towards the edge of the expanded single crystal diamond top surface. The luminescence intensity of the nitrogen-vacancy center is relatively high in the coalescence zone and a laterally grown part right below, which are attributed mainly to the higher growth rate. However, stress change and crystal quality change are negligible near the coalescence zone.

关键词： Plasma CVD

Ultrahigh-rate and high-frequency MXene micro-supercapacitors for kHz AC line-filtering

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Journal of Energy Chemistry 2022年第6期31卷 1-8,I0001页

作者： Xin Feng Sen Wang Pratteek Das Xiaoyu Shi Shuanghao Zheng Feng Zhou Jing Ning Dong Wang Jincheng Zhang Yue Hao Zhong-Shuai Wu Guangzhou Wide Bandgap Semiconductor Innovation Center Xidian UniversityXi’an 710071ShaanxiChina State Key Laboratory of Catalysis Dalian Institute of Chemical PhysicsChinese Academy of SciencesDalian 116023LiaoningChina Dalian National Laboratory for Clean Energy Chinese Academy of SciencesDalian 116023LiaoningChina State Key discipline Laboratory of Wide Band Gap Semiconductor Technology Xidian UniversityXi’an 710071ShaanxiChina Shaanxi Joint Key Laboratory of Graphene Xidian UniversityXi’an 710071ShaanxiChina Xidian-Wuhu Research Institute Wuhu 241000AnhuiChina

Harnessing energy from the environment promotes the rapid development of micro-power generators and relevant power management modules of alternating current (AC) line-filtering to obtain a stabilized direct current (DC) output for storage and use. Micro-supercapacitors (MSCs) with miniaturized volume and high-frequency response are regarded as a critical component in filtering circuits for microscale power conversion. Here, we reported the fabrication of the wafer-sized planar MSCs (M-MSCs) based on 2D Ti_(2)C_(2)T_(6) MXene using a photolithography technique. The M-MSCs exhibited an areal capacitance of 153 μF cm^(-2) and a frequency characteristic (f_(0)) of 5.6 k Hz in aqueous electrolyte. Moreover, by employing suitable ionic liquid as electrolyte, the voltage window was expanded to 2 V and the f_(0) could be pushed to 6.6 k Hz relying on the electrical double-layer mechanism and lower adsorption energy while maintaining quasi-rectangular cyclic voltammogram curves at 5000 V s^(-1). Furthermore, the integrated MSCs pack was constructed and exhibited excellent rectifying ability by filtering various highfrequency 5000 Hz AC signals with different waveforms into stable DC outputs. Such ultrahigh-rate and high-voltage M-MSCs module for k Hz AC line-filtering would be potentially integrated with customizable electronics to realize on-chip rectifiers in high-density integrated circuit.

关键词： MXene Micro-supercapacitors Ionic liquid Photolithography AC line-filtering Energy storage

MoS_(2)/Si tunnel diodes based on comprehensive transfer technique

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Chinese physics B 2023年第1期32卷 106-112页

作者：朱翊吕红亮张玉明贾紫骥孙佳乐吕智军芦宾 School of Microelectronics Xidian UniversityThe State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXi'an 710071China Department of Integrated Circuit Design Institute of Microelectronics TechnologyXi'an 710071China School of physics and Information Engineering Shanxi Normal UniversityTaiyuan 030031China

Due to the pristine interface of the 2D/3D face-tunneling heterostructure with an ultra-sharp doping profile, the 2D/3D tunneling field-effect transistor(TFET) is considered as one of the most promising low-power devices that can simultaneously obtain low off-state current(IOFF), high on-state current(ION) and steep subthreshold swing(SS). As a key element for the 2D/3D TFET, the intensive exploration of the tunnel diode based on the 2D/3D heterostructure is in urgent *** transfer technique composed of the exfoliation and the release process is currently the most common approach to fabricating the 2D/3D heterostructures. However, the well-established transfer technique of the 2D materials is still *** a small part of the irregular films can usually be obtained by mechanical exfoliation, while the choice of the chemical exfoliation may lead to the contamination of the 2D material films by the ions in the chemical etchants. Moreover, the deformation of the 2D material in the transfer process due to its soft nature also leads to the nonuniformity of the transferred film,which is one of the main reasons for the presence of the wrinkles and the stacks in the transferred film. Thus, the large-scale fabrication of the high-quality 2D/3D tunnel diodes is limited. In this article, a comprehensive transfer technique that can mend up the shortages mentioned above with the aid of the water and the thermal release tape(TRT) is proposed. Based on the method we proposed, the MoS_(2)/Si tunnel diode is experimentally demonstrated and the transferred monolayer MoS_(2) film with the relatively high crystal quality is confirmed by atomic force microscopy(AFM), scanning electron microscopy(SEM), and Raman characterizations. Besides, the prominent negative differential resistance(NDR) effect is observed at room temperature, which verifies the relatively high quality of the MoS_(2)/Si heterojunction. The bilayer MoS_(2)/Si tunnel diode is also experimentally fabricated

关键词： 2D/3D heterostructure transfer technique tunnel diode MoS_(2)/Si

High on-state current p-type tunnel effect transistor based on doping modulation

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Chinese physics B 2023年第7期32卷 577-581页

作者：孙佳乐张玉明吕红亮吕智军朱翊潘禹澈芦宾 School of Microelectronics Xidian UniversityThe State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXi’an 710071China Department of Integrated Circuit Design Institute of Microelectronics TechnologyXi’an 710071China School of physics and Information Engineering Shanxi Normal UniversityTaiyuan 030031China

To solve the problem of the low on-state current in p-type tunnel field-effect transistors(p-TFETs),this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling ***-regulated silicon-based high on-state p-TFET devices are designed and fabricated,and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same *** method provides a new idea for the realization of high on-state current TFET devices.

关键词： tunnel field-effect transistors(TFET) band-to-band tunneling(BTBT) on-state current doping modulation

Analysis of the new ternary phase with C_(6)Cr_(23) structure in Mg-Co-B system by Rietveld method and physical properties of its Ni-substituting effect

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Journal of Magnesium and Alloys 2022年第7期10卷 1899-1908页

作者： Qiang Feng Changzhong Liao Cheng Dong Kaimin Shih Minhua Su College of physics and Engineering Chengdu Normal UniversityChengduSichuan 611130China Department of Civil Engineering The University of Hong KongHong KongChina National Laboratory for Superconductivity Institute of Physics and Beijing National Laboratory for Condensed Matter PhysicsChinese Academy of SciencesBeijing 100190China Guangdong Provincial Key Laboratory of Radionuclides Pollution Control and Resources School of Environmental Science and EngineeringGuangzhou UniversityGuangzhou 510006China

A new ternary Mg_(1.4)Co_(21.6)B_(6) compound in the Mg-Co-B system was synthesized via a conventional solid-state reaction method and the effect of Ni-substitution on its crystal structure,thermal stability,solid solubility and physical properties were systematically *** crystal structure of the Mg_(1.4)Co_(21.6)B_(6) compound was fully determined by the X-ray diffraction technique with Rietveld refinement *** is found that Mg_(1.4)Co_(21.6)B_(6) crystallizes in the form of C_(6)Cr_(23) structure type(space group:Fm-3m(No.225),a=10.5617(2)A,Z=4).The results showed that the 4a sites have been occupied completely by Co atoms in present compound which with M_(2-x)Ni_(21+x)B_(6) form belonging to the W_(2)Cr_(21)C_(6)-*** Mg_(1.4)Co_(21.6)B_(6) is repeatedly sintered at elevated temperatures,it becomes unstable and decomposes into Co3B and *** lattice parameters of the Mg_(1.4)Co_(21.6)B_(6) solid solution alters dramtically with increasing Ni substitution,with no regular trend being *** electrical and magnetic performances of the 3.6Mg:3Co:17Ni:6B and 3.6Mg:3Co:18Ni:6B(nominal compositions)samples suggest that both samples are typical ferromagnetic *** temperature in the maximum drop of theρ(T)curve decreases as a function of the Ni *** on the correlation between the critical temperature and Ni content,a linear fitting equation is obtained and the critical temperature of Mg_(1.4)Co_(21.6)B_(6) calculated utilizing the linear fitting *** findings in this work may provide certain reference values for material science on electrical magnetic properties and other references for researching the material further.

关键词： Mg-Co-Bsystem Crystal structure Stability Ni-substituting effect Rietveld refinement

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

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Chinese physics B 2011年第9期20卷 425-429页

作者：刘子扬张进成段焕涛薛军帅林志宇马俊彩薛晓咏郝跃 School of Microelectronics and State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian University

The strain relaxation of an A1GaN barrier layer may be influenced by a thin cap layer above, and affects the transport properties of A1GaN/GaN heterostructures. Compared with the slight strain relaxation found in A1GaN barrier layer without cap layer, it is found that a thin cap layer can induce considerable changes of strain state in the A1GaN barrier layer. The degree of relaxation of the A1GaN layer significantly influences the transport properties of the two-dimensional electron gas （2DEG） in A1GaN/GaN heterostructures. It is observed that electron mobility decreases with the increasing degree of relaxation of the A1GaN barrier, which is believed to be the main cause of the deterioration of crystalline quality and morphology on the A1GaN/GaN interface. On the other hand, both GaN and A1N cap layers lead to a decrease in 2DEC density. The reduction of 2DEG caused by the GaN cap layer may be attributed to the additional negative polarization charges formed at the interface between CaN and A1GaN, while the reduction of the piezoelectric effect in the A1GaN layer results in the decrease of 2DEC density in the case of A1N cap layer.

关键词： cap layer strain relaxation A1GaN/GaN transport properties

Current oscillation in GaN-HEMTs with p-GaN islands buried layer for terahertz applications

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Chinese physics B 2022年第5期31卷 738-742页

作者：杨文璐杨林安申飞翔邹浩李杨马晓华郝跃 State Key discipline Laboratory of Wide Band-gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China

A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is *** introduction of a p-GaN island redistributes the electric field in the gate–drain channel region,thereby promoting the formation of electronic domains in the two-dimensional electron gas(2DEG)*** formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD *** results show that the 0.2µm gate HEMT with a PIBL structure having a p-GaN island doping concentration(Np)of 2.5×10^(18)cm^(−3)–3×10^(18)cm^(−3)can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage(V_(gs))of 0.6 *** the distance(D_(p))between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm,the fundamental frequency decreases from 377 GHz to 344 GHz,as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_(f1)/I_(avg) ranging from 2.4%to 3.84%.

关键词： p-GaN island high electron mobility transistor(HEMT) AlGaN/GaN electron domain