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Chinese Physics Letters 2002年第6期19卷 875-877页

作者：张卫王鹏飞等 departmentofmicroelectronics FudanUniversityShanghai200433 InstituteforIntegratedCircuits TechnicalUniversityofMunichGenmany

The influence of N2 plasma annealing on the properties of fluorine doped silicon oxide (SiOF) films is investigated. The stability of the dielectric constant of SiOF film is remarkably improved by the N2 plasma annealing. After enduring a moisture absorption test for six hours in a chamber with 60% humidity at 50°C, the dielectric constant variation of the annealed SiOF films is only 1.5%, while the variation for those SiOF films without annealing is 15.5%. Fourier transform infrared spectroscopic results show that the absorption peaks of Si-OH and H-OH of SiOF films are reduced after the N2 plasma annealing because the annealing can wipe off some unstable Si-F2 bonds in SiOF films. These unstable Si-F2 bonds are suitable to react with water, resulting in the degradation of SiOF film properties. Therefore, the N2 plasma annealing meliorates the properties of SiOF films with low dielectric constant.

关键词： Silica

Schottky Barrier Height Inhomogeneity of Ti／n—GaAs Contact Studied by the I—V—T Technique

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Chinese Physics Letters 2002年第4期19卷 553-556页

作者：蒋玉龙陆昉 departmentofmicroelectronics ASIC&SystemStateKeyLaboratoryFudanUniversityShanghai200433 StateKeyLaboratoryofAppliedSurfacePhysics FudanUniversityShanghai200433

The current-voltage characteristics of Ti/n-GaAs Schottky diodes measured over a temperature range of 78-299K have been interpreted on the basis of thermionic emission across an inhomogeneous Schottky contact. The experiment shows that the apparent barrier height (ap) increases from 0.437eV at 78K to 0.698eV at room temperature. The plot of ap versus 1/T does not exhibit a simple linear relationship over the whole temperature range, indicating that the barrier height distribution is more complicated than the frequently observed single Gaussian distribution. A new multi-Gaussian distribution model is developed. Our experimental results can be explained by a double Gaussian distribution of the barrier heights. The weight, the mean barrier height, and the standard deviation of the two Gaussian functions are 0.00001 and 0.99999, 0.721 and 0.696, 0.069 and 0.012eV, respectively.

关键词： Thermionic emission

High Performance P-Channel Schottky Barrier MOSFETs with Self-Aligned PtSi Source／Drain on Thin Film SOI Substrate

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Chinese Physics Letters 2005年第8期22卷 2020-2022页

作者：竺士炀李名复 departmentofmicroelectronics FudanUniversityShanghai200433//SiliconNanoDeviceLaboratoryDepartmentofElectricMandComputerEngineeringNationalUniversityofSingaporeSingapore119260 SiliconNanoDeviceLaboratory DepartmentofElectricMandComputerEngineeringNationalUniversityofSingaporeSingapore119260

P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) with PtSi Schottky barrier source/drain, high-k gate dielectric and metal gate electrode were fabricated on a thin p-type silicon-on-insulator (SOI) substrate using a simplified low temperature process. The device works on a fully-depleted accumulation-mode and has an excellent electrical performance. It reaches Ion/Ioff ratio of about 107, subthreshold swing of 65mV/decade and saturation drain current of Ids = 8.8μA/μm at |Vg−Vth| = |Vd| = 1V for devices with the channel length 4.0μm and the equivalent oxide thickness 2.0nm. Compared to the corresponding bulk-Si counterparts, SOI p-SBMOSFETs have smaller off-state current due to reduction of the PtSi/Si contact area.

关键词： SOI CMOS FD

I-V-T studies on Ni-silicide／n-Si（100） contacts formed by Ti-Ni-Si solid state reaction

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Chinese Physics B 2005年第8期14卷 1639-1643页

作者：竺士炀茹国平周嘉黄宜平 departmentofmicroelectronics FudanUniversityShanghai200433China

The current-voltage (I-V) characteristics of Ni silicide/n-Si(100) contacts, which were formed from solid-state reaction of Ni-Si with a thin Ti capping layer at different annealing temperatures, were measured at temperatures ranging from 80K to room temperature. The low temperature I-V curves exhibit an excess current at the low bias region which is significantly larger than that predicted by the traditional thermionic emission (TE) model. A doubleSchottky barrier height (SBH) model simplified from Tung's pinch-off model is used to analyse the measured I-V curves,from which the extent of the SBH inhomogeneity can be extracted. Higher annealing temperature results in larger SBH inhomogeneity, implying the degradation of the silicide film uniformity. The thin Ti capping layer increases slightly both the NiSi phase transfer temperature and the thermal stability of the formed NiSi film.

关键词： Schottky barrier metal-semiconductor contact current-voltage characteristics

Study of Ge_2Sb_2Te_5 Film for Nonvolatile Memory Medium

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Journal of Materials Science & Technology 2005年第1期21卷 95-99页

作者： BaoweiQIA YunfengLAI JieFENG YunLING YinyinLIN Ting'aoTANG BingchuCAI BomyCHEN ResearchInstituteofMicro/NanometerTechnology KeyLaboratoryforThinFilmandMicrofabricationTechnologyofMinistryofEducationShanghaiJiaoTongUniversityShanghai200030China departmentofmicroelectronics FudanUniversityShanghai200433China SiliconStorageTechnologyInc 1171SonoraCourtSunnyvaleCA94086USA

The amorphous Ge2Sb2Te5 film with stoichiometric compositions was deposited by co-sputtering of separate Ge, Sb, and Te targets on SiO2/Si (100) wafer in ultrahigh vacuum magnetron sputtering apparatus. The crystallization behavior of amorphous Ge2Sb2Te5 film was investigated by X-ray diffraction (XRD), atomic force microscopy (AFM) and differential scanning calorimetry (DSC). With an increase of annealing temperature, the amorphous Ge2Sb2Te5 film undergoes a two-step crystallization process that it first crystallizes in face-centered-cubic (fcc) crystal structure and finally fcc structure changes to hexagonal (hex) structure. Activation energy values of 3.636±0.137 and 1.579±0.005 eV correspond to the crystallization and structural transformation processes, respectively. From annealing temperature dependence of the film resistivity, it is determined that the first steep decrease of the resistivity corresponds to crystallization while the second one is primarily caused by structural transformation from 'fcc' to 'hex' and growth of the crystal grains. Current-voltage (Ⅰ-Ⅴ) characteristics of the device with 40 nm-thick Ge2Sb2Te5 film show that the Ge2Sb2Te5 film with nanometer order thickness is still applicable for memory medium of nonvolatile phase change memory.

关键词： Co-sputtering Ge2Sb2Te5 film Activation energy Resistivity Memory medium

Total dose radiation effects of pressure sensors fabricated on Unibond-SOI materials

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Nuclear Science and Techniques 2001年第3期12卷 209-214页

作者： ZHUShi－Yang HUANGYi－Ping 等 departmentofmicroelectronics FudanUniversityShanghai200433

Piezoresistive pressure sensors with a twin-island structure were suc- cessfully fabricated using high quality Unibond-SOI (On Insulator) materials. Since the piezoresistors were structured by the single crystalline silicon overlayer of the SOI wafer and were totally isolated by the buried SiO2. the sensors are radiation-hard. The sensitivity and the linearity of the pressure sensors keep their original values after being irradiated by 60Co γ-rays up to 2.3×104Gy (H2O). However, the offset voltage of the sensor has a slight drift, increasing with the radiation dose. The absolute value of the offset voltage deviation depends on the pressure sensor itself. For comparison, corresponding polysilicon pressure sensors were fabricated using the similar process and irradiated at the same condition.

关键词：半导体集成电路 SOI材料大剂量辐照效应

Double threshold behaviour of I—V characteristics of CoSi2／Si Schottky contacts

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Chinese Physics B 2002年第2期11卷 156-162页

作者：竺士炀 R.L.VanMeirhaeghe 等 departmentofmicroelectronics FudanUniversityShanghai200433China DepartmentofSolidStateSciences GentUniversityKrijgslaan281/S1B-9000GentBelgium

The forward current-voltage (I-V) characteristics of polycrystalline CoSi2/n-Si(100) Schottky contacts have beenmeasured in a wide temperature range. At low temperatures (≤200K), a plateau-like section is observed in the I-Vmodel based on thermionic emission (TE) and a Gaussian distribution of Schottky barrier height (SBH). Such a doublethreshold behaviour can be explained by the barrier height inhomogeneity, i.e. at low temperatures the current throughpatches with low SBH dominates at small bias region With increasing bias voltage, the Ohmic effect becomes someimportant and the current through the whole junction area exc eeds the patch current, thus resulting in a plateau-likesection in the I-V curves at moderate bias. For the polycrystalline CoSi2/Si contacts studied in this paper, the apparentideality factor of the patch current is much larger than that calculated from the TE model taking the pinch-off effectinto account. This suggests that the current flowing through these patches is of the tunnelling type, rather than thethermionic emission type. The experimental I-V characteristics can be fitted reasonably well in the whole temperatureregion using the model based on tunnelling and pinch-off.

关键词： Schottky barrier height metal-semiconductor contact inhomogeneity

Wafer-scale arrayed p-n junctions based on few-layer epitaxial GaTe

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Nano Research 2015年第10期8卷 3332-3341页

作者： Xiang Yuan Lei Tang Peng Wang Zhigang Chen Yichao Zou Xiaofeng Su Cheng Zhang Yanwen Liu Weiyi Wang Cong Liu Fansheng Chen Jin Zou Peng Zhou Weida Hu Faxian Xiu StateKeyLaboratoryofSurfacePhysicsandDepartmentofPhysics andCollaborativeInnovationCenterofAdvancedMicrostructuresFudanUniversityShanghai200433China NationalLaboratoryforInflaredPhysics ShanghaiInstituteofTechnicalPhysicsChineseAcademyofSciencesShanghai200083China MaterialsEngineering TheUniversityofQueenslandBrisbaneQLD4072Australia SatelliteRemoteSensingLaboratory ShanghaiInstituteofTechnicalPhysicsChineseAcademyofSciencesShanghai200083China CentreforMicroscopyandMicroanalysis TheUniversityofQueenslandBrisbaneQLD4072Australia StateKeyLaboratoryofASICandSystem DepartmentofMicroelectronicsFudanUniversityShanghai200433China

二维(2D ) 材料吸引了实质的注意在电子并且有灵活、透明、高度悦耳的优异优点的 optoelectronic 应用。当时，无差距的 graphene 展出极端宽带、快的 photoresponse 半导体的瞬间 2 和门高展出的 2D 敏感和悦耳的 responsivity 到可见... 详细信息

二维(2D ) 材料吸引了实质的注意在电子并且有灵活、透明、高度悦耳的优异优点的 optoelectronic 应用。当时，无差距的 graphene 展出极端宽带、快的 photoresponse 半导体的瞬间 2 和门高展出的 2D 敏感和悦耳的 responsivity 到可见的光。然而，设备收益和重覆性打电话让进一步的改进完成大规模一致性。这里，我们与 28.4 厘米 2/(V0 的高洞活动性报导晶片规模门的 layer-by-layer

关键词： p-n结阵列硅光电二极管二维材料光电子器件圆片外部量子效率高度可调