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Enhancing multifunctional photocatalysis with acetate-assisted cesium doping and unlocking the potential of Z-scheme solar water splitting

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Carbon Energy 2024年第3期6卷 178-195页

作者： Mengmeng Ma Jingzhen Li Xiaogang Zhu Kong Liu Kaige Huang Guodong Yuan Shizhong Yue Zhijie Wang Shengchun Qu Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesBeijingChina Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijingChina department of Physics College of Physical Science and TechnologyXiamen UniversityXiamenChina State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijingChina

Graphitic carbon nitride(g-C_(3)N_(4))has been extensively doped with alkali metals to enlarge photocatalytic output,in which cesium(Cs)doping is predicted to be the most ***,the sluggish diffusion and doping kinetics of precursors with high melting points,along with imprecise regulation,have raised the debate on whether Cs doping could make *** this matter,we attempt to confirm the positive effects of Cs doping on multifunctional photocatalysis by first using cesium acetate with the character of easy *** optimized Csdoped g-C_(3)N_(4)(CCN)shows a 41.6-fold increase in visible-light-driven hydrogen evolution reaction(HER)compared to pure g-C_(3)N_(4) and impressive degradation capability,especially with 77%refractory tetracycline and almost 100%rhodamine B degradedwithin an *** penetration ofCs+is demonstrated to be a mode of interlayer doping,and Cs–N bonds(especially with sp^(2) pyridine N in C═N–C),along with robust chemical interaction and electron exchange,are *** atomic configuration triggers the broadened spectral response,the improved charge migration,and the activated photocatalytic ***,we evaluate the CCN/cadmium sulfide hybrid as a Z-scheme configuration,promoting the visible HER yield to 9.02 mmol g^(−1) h^(−1),which is the highest ever reported among all CCN *** work adds to the rapidly expanding field of manipulation strategies and supports further development of mediating served for photocatalysis.

关键词： acetate-assisted cesium doping multifunctional photocatalysis Z-scheme

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Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

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Nano Research 2024年第3期17卷 1516-1524页

作者： Pengfei Su Ziqi Zhang Linshan Luo Zhiyong Zhang Chaofei Lan Yahui Li Shaowen Xu Shanpeng Pei Guangyang Lin Cheng Li Xiang Han Wei Huang Songyan Chen Fujian Provincial Key Laboratory of semiconductors and Applications Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesDepartment of PhysicsXiamen UniversityXiamen 361005China College of Materials Science and Engineering Nanjing Forestry UniversityNanjing 210037China Science and Technology on Analog Integrated Circuit Laboratory Chongqing 400060China Shandong Electric Power Engineering Consulting Institute Co. Ltd.Jinan 250013China

To meet the growing demand for wearable smart electronic devices,the development of flexible lithium-ion batteries(LIBs)is *** is an ideal candidate for the anode material of flexible lithium-ion batteries due to its high specific capacity,low working potential,and earth *** largest challenge in developing a flexible silicon anode is how to maintain structural integrity and ensure stable electrochemical reactions during external *** this work,we propose a novel design for fabricating core–shell electrodes based on a copper nanowire(CuNW)array core and magnetron sputtered Si/C *** nanowire array structure has characteristics of bending under longitudinal stress and twisting under transverse stress,which helps to maintain the mechanical stability of the structure during electrode bending and *** low-temperature annealing generates a small amount of Cu3Si alloy,which enhances the connection strength between Si and the conductive network and solves the poor conductivity problem of Si,which is known as a semiconductor *** unique configuration design of CuNW@Si@C-400℃ leads to stable long cycle performance of 1109 mAh∙g^(-1) after 1000 cycles and excellent rate performance of 500 mAh∙g^(-1) at a current density of 10 A∙g^(-1).Furthermore,the CuNW@Si@C-400℃||LiFePO_(4)(LFP)full battery demonstrates excellent flexibility,with a capacity retention of more than 96%after 100 *** study provides a promising strategy for the development of flexible lithium-ion batteries.

关键词： flexible lithium-ion battery silicon anode magnetron sputtering core–shell electrode Cu nanowire array

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Enhanced potassium storage of carbon nanofibers as binderfree anodes enabled by coupling ultra-small amorphous Sb_(2)O_(3),graphene modification and sulfur doping

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Rare Metals 2024年第1期43卷 51-64页

作者： Zhao Huang Yu-Kang Lou Lin Peng Yuan Peng Meng-Meng Wang Ming Zhang College of Railway Transportation Hunan University of TechnologyZhuzhou 412007China College of semiconductors(College of Integrated Circuits) Changsha Semiconductor Technology and Application Innovation Research InstituteHunan UniversityChangsha 410082China Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Semiconductors(College of Integrated Circuits)Hunan UniversityChangsha 410082China

Considering the intrinsic advantages of natural copiousness and cost-effectiveness of potassium resource,potassium-ion batteries(KIBs) are booming as prospective alternatives to lithium-ion batteries(LIBs) in large-scale energy storage scenarios. Nevertheless, lacking desirable electrodes for reversibly hosting the bulky K+hinders the widespread application of KIBs, and it needs to be urgently solved. Hereon, the porous S-doped Sb_(2)O_(3)-graphene-carbon(SAGC) nanofibers are manufactured through an adjustable and facile approach, which involves electrospinning, in situ etching and sulfuration. The synthesized SAGC is featured by the ultra-small amorphous Sb_(2)O_(3) homogeneously wrapped inside the carbon matrix, as well as the co-incorporation of graphene and sulfur. Tentatively,the SAGC nanofiber sheets are applied as binder-free anodes for KIBs, exhibiting a prominent cycling life(256.72 m Ah·g^(-1) over 150 cycles at 100 m A·g^(-1)) and rate·g^(-1) over 100 cycles at 1 A·g^(-1)). The positive synergy among all the active components accounts for the distinguished performances of the SAGC. By reinforcing the tolerability to the swelling stress, producing the valid electrochemical active sites, and promoting the charge transferring for reversible K+uptake, the SAGC finally renders the excellent cyclability, capacity, and rate capability. Moreover, the extrinsic electrochemical pseudocapacitance characteristics induced by the porous carbon substrate elevate the K-storage capacity of the SAGC as well. It is hoped that the conclusions drawn may offer new insights into a direction for the high-performance binderfree KIB anodes.

关键词： S-doped Sb_(2)O_(3)-graphene-carbon Nanofibers Binder-free Anodes Potassium-ion batteries

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Discovery of strong bulk Dzyaloshinskii-Moriya interaction in composition-uniform centrosymmetric magnetic single layers

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Science China(Physics,Mechanics & Astronomy) 2024年第2期67卷 174-180页

作者： Lijun Zhu David Lujan Xiaoqin Li State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of SciencesBeijing 100049China department of Physics Center for Complex Quantum SystemsUniversity of Texas at AustinAustin 78712USA

Dzyaloshinskii-Moriya interaction(DMI)is the key ingredient of chiral spintronic phenomena and the emerging technologies based on such phenomena.A nonzero DMI usually occurs at magnetic interfaces or within non-centrosymmetric single ***,we report the observation of a strong unexpected DMI within a centrosymmetric polycrystalline ferromagnet that has neither a crystal inversion symmetry breaking nor a composition *** DMI is a bulk effect,increases with the thickness of the magnetic layer,and is insensitive to the symmetry of the interfaces or the neighboring *** observe a total DMI strength that is a factor of>2 greater than the highest interfacial DMI in the *** DMI most likely arises from the strong spin-orbit coupling,strong orbital hybrization,and a“hidden”long-range asymmetry in the *** discovery of the strong unconventional bulk DMI in centrosymmetric,composition-uniform magnetic single layers provides fundamental building blocks for the emerging field of spintronics and will stimulate the exploitation of unconventional spin-orbit phenomena in a wide range of materials.

关键词： Brillouin light scattering Dzyaloshinskii-Moriya interaction spin wave

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Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

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Chinese Optics Letters 2024年第1期22卷 123-127页

作者：曹澎王天财彭红玲李占国 Qiandong Zhuang 郑婉华 Laboratory of Solid-State Optoelectronics Information Technology Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China College of Electronic and Communication Engineering University of Chinese Academy of SciencesBeijing 100049China State Key Laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China School of Physics Changchun Normal UniversityChangchun 130022China Physics department Lancaster UniversityLancaster LA14YBUK

In this paper,we demonstrate nBn InAs/InAsSb type II superlattice(T2SL)photodetectors with AlAsSb as the barrier that targets mid-wavelength infrared(MWIR)*** improve operating temperature and suppress dark current,a specific Sb soaking technique was employed to improve the interface abruptness of the superlattice with device passivation using a SiO_(2) *** result in ultralow dark current density of 6.28×10^(-6)A/cm^(2)and 0.31 A/cm^(2)under-600 mV at 97 K and297 K,respectively,which is lower than most reported InAs/InAsSb-based MWIR *** resistance area product values of 3.20×10^(4)Ω·cm^(2)and 1.32Ω·cm^(2)were obtained at 97 K and 297 K.A peak responsivity of 0.39 A/W with a cutoff wavelength around 5.5μm and a peak detectivity of 2.1×10^(9)cm·Hz^(1/2)/W were obtained at a high operating temperature up to 237 K.

关键词： mid-wavelength infrared photodetector InAs/InAsSb superlattice high operating temperature dark current

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Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

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Journal of semiconductors 2024年第8期45卷 74-80页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Laboratory of Metal Oxide semiconductors Research and Development Center for Advanced Technologies in MicroelectronicsNational Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia department of Semiconductor Electronics and Physics of semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital *** films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase *** spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 *** maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) ***.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 *** high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole ***α-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) *** a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

关键词： HVPE gallium oxide solar-blind ultraviolet detector self-powered mode

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Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate

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Science China(Information Sciences) 2024年第6期67卷 461-462页

作者： Xiao WANG Zhi-Yu LIN Yuan-Hang SUN Long YUE Yu-Min ZHANG Jian-Feng WANG Ke XU School of Nano-Tech and Nano-Bionics University of Science and Technology of China Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Information Materials Research department Suzhou laboratory Suzhou Nanowin Science and Technology Co. Ltd. Jiangsu Institute of Advanced semiconductors

In the process of homoepitaxy AlGaN/GaN heterojunction by metal-organic chemical vapor deposition (MOCVD) on free-standing substrates,Si impurities from the air and reaction chamber accumulate at the regrowth interfac...

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Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices

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Science Bulletin 2024年第13期69卷 2080-2088页

作者： Siyuan Cui Ke Sun Zhefu Liao Qianxi Zhou Leonard Jin Conglong Jin Jiahui Hu Kuo-Sheng Wen Sheng Liu Shengjun Zhou Center for Photonics and semiconductors School of Power and Mechanical EngineeringWuhan UniversityWuhan 430072China The Institute of Technological Sciences Wuhan UniversityWuhan 430072China department of Mechanical and Mechatronics Engineering University of WaterlooWaterloo ONN2L 3G1Canada Jiangxi SMTC Semiconductor Co. Ltd.Nanchang 330096China

III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice ***,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction *** design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection *** to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation *** study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.

关键词： Flexible nanoimprint lithography Bioinspired Micro-and nano-manufacturing III-nitride epitaxy Optoelectronic devices

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Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN

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Science China(Information Sciences) 2024年第9期67卷 348-349页

作者： Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO Changsha Semiconductor Technology and Application Innovation Research Institute College of Semiconductors (College of Integrated Circuits) Hunan University Hunan San'an Semiconductor Co. Ltd. Songshan Lake Materials Laboratory

GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility. However, the hole-based GaN transistors which are pivotal to the GaN-based CMOS circuits and high-side switching are still under investigation. Two-dimensional hole gas(2DHG) has been used to demonstrate the p-channel GaN field-effect-transistors(FETs) [1–5].

关键词： MOSFETS

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High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

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Journal of semiconductors 2024年第4期45卷 56-62页

作者： Aleksei Almaev Alexander Tsymbalov Bogdan Kushnarev Vladimir Nikolaev Alexei Pechnikov Mikhail Scheglov Andrei Chikiryaka Petr Korusenko Research and Development Center for Advanced Technologies in Microelectronics National Research Tomsk State UniversityTomsk 634050Russia Fokon LLC Kaluga 248035Russia department of Semiconductor Electronics and Physics of semiconductors National University of Science and Technology MISISMoscow 119049Russia Perfect Crystals LLC Saint Petersburg 194223Russia department of Solid-State Electronics Saint Petersburg State UniversitySaint Petersburg 199034Russia department of Physics Omsk State Technical UniversityOmsk 644050Russia

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in ***κ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire *** spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 *** maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 ***.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 *** enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet *** detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)*** responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,*** rise and decay times in self-powered mode did not exceed 100 ms.

关键词： κ(ε)-gallium oxide solar-blind shortwave ultraviolet radiation detectors self-powered operation mode

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