Flexible nanoimprint lithography enables high-throughput manufacturing of bioinspired microstructures on warped substrates for efficient III-nitride optoelectronic devices
柔性纳米压印技术在翘曲衬底上制造仿生微结构及其在III族氮化物半导体光电器件中的应用作者机构：Center for Photonics and SemiconductorsSchool of Power and Mechanical EngineeringWuhan UniversityWuhan 430072China The Institute of Technological SciencesWuhan UniversityWuhan 430072China Department of Mechanical and Mechatronics EngineeringUniversity of WaterlooWaterloo ONN2L 3G1Canada Jiangxi SMTC Semiconductor Co.Ltd.Nanchang 330096China
出 版 物：《Science Bulletin》 (科学通报（英文版）)
年 卷 期：2024年第69卷第13期
页 面：2080-2088页
核心收录：
基 金：supported by the National Natural Science Foundation of China(52075394) the National Key R&D Program of China(2022YFB3603603 and 2021YFB3600204) the Key Research and Development Program of Hubei Province(2023BAB137) the Knowledge Innovation Program of Wuhan-Basic Research,the National Youth Talent Support Program,and the Fundamental Research Funds for the Central Universities
主 题：Flexible nanoimprint lithography Bioinspired Micro-and nano-manufacturing III-nitride epitaxy Optoelectronic devices
摘 要：III-nitride materials are of great importance in the development of modern optoelectronics,but they have been limited over years by low light utilization rate and high dislocation densities in heteroepitaxial films grown on foreign substrate with limited refractive index contrast and large lattice ***,we demonstrate a paradigm of high-throughput manufacturing bioinspired microstructures on warped substrates by flexible nanoimprint lithography for promoting the light extraction *** design a flexible nanoimprinting mold of copolymer and a two-step etching process that enable high-efficiency fabrication of nanoimprinted compound-eye-like Al2O3 microstructure(NCAM)and nanoimprinted compound-eye-like SiO_(2)microstructure(NCSM)template,achieving a 6.4-fold increase in throughput and 25%savings in economic costs over stepper projection *** to NCAM template,we find that the NCSM template can not only improve the light extraction capability,but also modulate the morphology of AlN nucleation layer and reduce the formation of misoriented GaN grains on the inclined sidewall of microstructures,which suppresses the dislocations generated during coalescence,resulting in 40%reduction in dislocation *** study provides a low-cost,high-quality,and high-throughput solution for manufacturing microstructures on warped surfaces of III-nitride optoelectronic devices.
维普期刊数据库