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Progress on the antiferromagnetic topological insulator MnBi2Te4

National Science Review 2024年第2期11卷 33-49页

作者： Shuai Li Tianyu Liu Chang Liu Yayu Wang Hai-Zhou Lu X.C.Xie department of physics Harbin Institute of Technology Shenzhen Institute for Quantum Science and Engineering and department of physics Southern University of Science and Technology(SUSTech) Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area(Guangdong) Shenzhen key laboratory of Quantum Science and Engineering International Quantum Academy Beijing Academy of Quantum Information Sciences Beijing key laboratory of Optoelectronic Functional Materials&Micro-Nano Devices Department of Physics Renmin University of China state key laboratory of Low Dimensional Quantum physics Department of PhysicsTsinghua University Frontier Science Center for Quantum Information Hefei National laboratory International Center for Quantum Materials School of Physics Peking University Institute for Nanoelectronic Devices and Quantum Computing Fudan University

Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed maTher physics. They represent a new class of materials exhibiting nontrivial topological phases,and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic *** particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

关键词： MnBi2Te4 magnetic topological insulator antiferromagnetic quantum anomalous Hall effect axion insulator

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Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown Mn Bi2Te4 thin films

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National Science Review 2024年第2期11卷 24-32页

作者： Yunhe Bai Yuanzhao Li Jianli Luan Ruixuan Liu Wenyu Song Yang Chen Peng-Fei Ji Qinghua Zhang Fanqi Meng Bingbing Tong Lin Li Yuying Jiang Zongwei Gao Lin Gu Jinsong Zhang Yayu Wang Qi-Kun Xue Ke He Yang Feng Xiao Feng state key laboratory of Low Dimensional Quantum physics Department of Physics Tsinghua University Institute of physics Chinese Academy of Sciences School of Materials Science and Engineering Tsinghua University Beijing Academy of Quantum Information Sciences Frontier Science Center for Quantum Information Hefei National laboratory Southern University of Science and Technology

The intrinsic magnetic topological insulator MnBi2Te4provides a feasible pathway to the high-temperature quantum anomalous Hall（QAH） effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4thin flakes, it remains a big challenge to achieve molecular beam epitaxy（MBE）-grown MnBi2Te4thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4thin films with the chemical potential tuned by both controlled in situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4and to find a way out of the big difficulty in obtaining MnBi2Te4samples showing quantized transport properties.

关键词： intrinsic magnetic topological insulator quantized anomalous Hall resistivity molecular beam epitaxy quantized transport property

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Even-odd layer-dependent multiferroic in freestanding rare-earth orthorhombic perovskite

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Science China(physics,Mechanics & Astronomy) 2024年第7期67卷 151-157页

作者： Shaowen Xu Fanhao Jia Ning Dai School of physics and Optoelectronic Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China department of physics College of ScienceHangzhou Dianzi UniversityHangzhou 310018China state key laboratory of Infrared physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China

Freestanding oxide perovskites possess strong interlayer coupling between adjacent atomic layers,thus exerting a determinative effect on the magnetism and ferroelectricity of these atomic-scale ***,we propose an effective strategy to manipulate magnetism and ferroelectricity in freestanding rare-earth orthorhombic perovskite via modulation of layer *** performing first-principles calculations,an even-odd oscillation is demonstrated in few-layer GdAlO_(3)perovskite(GAP).Specifically,odd-layer systems with charged atomic layers are ferromagnetic polar metals,while even-layer systems are antiferromagnetic ferroelectric *** thickness-dependent magnetic phase transition originates from carrier doping,as rationalized by the Stoner ***,we demonstrate the promotion of in-plane ferroelectricity via the concurrent application of two distinct antiferrodistortive displacements,each driven by formation and breaking of *** multiferroic phases may emerge in other transition metal oxide perovskites supporting multiple valence states,e.g.,few-layer Gd MO_(3)(M=V,Cr,Mn,and Ni).This work puts forward a strategy for layer thickness engineering of magnetism and ferroelectricity in 2D oxide perovskite multiferroic materials.

关键词： few-layer rare-earth perovskite multiferroicity size effect first principles calculations

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Regulating the conductance of tungsten diselenide by oxygen plasma and improving its electrical stability by encapsulation

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Nano Research 2024年第4期17卷 3253-3260页

作者： Zhaofang Cheng Shaodan He Shimin Zhang Shijun Duan Min Wang Ziyu Liu Rong Zhang Wenya Qiang Xudong Zhang Minggang Xia MOE key laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter School of PhysicsXi’an Jiaotong UniversityXi’an 710049China department of Applied physics School of PhysicsXi’an Jiaotong UniversityXi’an 710049China Shaanxi Province key laboratory of Quantum Information and Optoelectronic Quantum Devices School of PhysicsXi’an Jiaotong UniversityXi’an 710049China

Two-dimensional(2D)tungsten selenide(WSe_(2))is promising candidate material for future electronic applications,owing to its potential for ultimate device *** improving the electronic performance of WSe_(2)-based field-effect transistors(FETs),the modification of surface properties is *** this study,the seamless structural phase transition in WSe_(2) lattice is achieved by soft oxygen plasma,regulating the electrical conductance of WSe_(2)-based *** found that during the soft oxygen plasma treatment with optimal processing time,the generated oxygen ions can substitute some selenium atoms and thus locally modify the bond length,inducing 2H→1T phase transition in WSe_(2) with seamless *** mosaic structures have been proven to tailor the electronic structure and increase the hole carrier concentration inside WSe_(2),significantly increasing the channel conductance of WSe_(2) *** the further increase of the oxygen plasma treatment time,the creation of more selenium vacancy defects leads to the electronic doping,resulting in the reduction of *** from the hexagonal boron nitride(h-BN)encapsulation to interrupt the partial structural relaxation from 1T to 2H phase,our WSe_(2) FET exhibits high electronic stability with conductance of 6.8×10^(-4) S,which is about four orders of magnitude higher than 2H WSe_(2)(5.8×10^(-8) S).This study could further broaden the WSe_(2) FETs in applications for functionalization and integration in electronics.

关键词： tungsten selenide(WSe2) structural phase transition oxygen plasma conductance hexagonal boron nitride(h-BN)encapsulation

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Tilted Perpendicular Anisotropy-Induced Spin-Orbit Ratchet Effects

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Chinese physics Letters 2024年第7期41卷 181-186,I0001,I0002,I0003页

作者：陈彬龙垣图聂宇林凌姿瑀马天平张瑞轩吴义政骆泳铭王宁宁 School of Electronics and Information Engineering Hangzhou Dianzi UniversityHangzhou 310018China state key laboratory of surface physics and department of physics Fudan UniversityShanghai 200433China Research Center for Intelligent Computing Platforms Zhejiang LaboratoryHangzhou 311121China Wenzhou Institute of Hangzhou Dianzi University Wenzhou 325038China Anhui key laboratory of Magnetic Functional Materials and Devices School of Materials Science and EngineeringAnhui UniversityHefei 230601China

Using micromagnetic simulations, we demonstrate the tilted perpendicular anisotropy-induced spin-orbit ratchet effect. In spin-orbit torque(SOT)-induced magnetization switching, the critical currents required to switch between the two magnetization states(upward and downward magnetization) are asymmetric. In addition, in the nanowire structure, tilted anisotropy induces formation of tilted domain walls(DWs). The tilted DWs exhibit a ratchet behavior during motion. The ratchet effect during switching and DW motions can be tuned by changing the current direction with respect to the tilting direction of anisotropy. The ratchet motion of the DWs can be used to mimic the leaky-integrate-fire function of a biological neuron, especially the asymmetric property of the “potential” and “reset” processes. Our results provide a full understanding of the influence of tilted perpendicular anisotropy on SOT-induced magnetization switching and DW motion, and are beneficial for designs of further SOT-based devices.

关键词： motion effect magnetization

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Controlled growth of vertically stacked In_(2)Se_(3)/WSe_(2) heterostructures for ultrahigh responsivity photodetector

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Nano Research 2024年第3期17卷 1856-1863页

作者： Cheng Zhang Biyuan Zheng Guangcheng Wu Xueying Liu Jiaxin Wu Chengdong Yao Yizhe Wang Zilan Tang Ying Chen Lizhen Fang Luying Huang Dong Li Shengman Li Anlian Pan key laboratory for Micro-Nano physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Materials Science and EngineeringHunan UniversityChangsha 410082China

Transition metal dichalcogenides(TMDCs)are promising candidates for future optoelectronic devices accounting for their high carrier mobility and excellent quantum ***,the limited light absorption efficiency in atomically thin layers significantly hinders photocarrier generation,thereby impairing the optoelectronic performance and hindering practical ***,we successfully synthesized In_(2)Se_(3)/WSe_(2) heterostructures through a typical two-step chemical vapor deposition(CVD)*** In_(2)Se_(3) nanosheet with strong light absorption capability,serving as the light absorption layer,was integrated with the monolayer WSe_(2),enhancing the photosensitivity of WSe_(2) *** laser irradiation with a wavelength of 520 nm,the In_(2)Se_(3)/WSe_(2) heterostructure device shows an ultrahigh photoresponsivity with a value as high as 2333.5 A/W and a remarkable detectivity reaching up to 6.7×10^(12) Jones,which is the highest among almost the reported TMDCs-based heterostructures grown via CVD even some fabricated by mechanical exfoliation(ME).Combing the advantages of CVD method such as large scale,high yield,and clean interface,the In_(2)Se_(3)/WSe_(2) heterostructures would provide a novel path for future high-performance optoelectronic device.

关键词： transition metal dichalcogenides(TMDCs) In_(2)Se_(3) heterostructure photodetector ultrahigh responsivity

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Antisymmetric planar Hall effect in rutile oxide ﬁlms induced by the Lorentz force

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Science Bulletin 2024年第15期69卷 2362-2369页

作者： Yongwei Cui Zhaoqing Li Haoran Chen Yunzhuo Wu Yue Chen Ke Pei Tong Wu Nian Xie Renchao Che Xuepeng Qiu Yi Liu Zhe Yuan Yizheng Wu department of physics State Key Laboratory of Surface PhysicsFudan UniversityShanghai 200433China Institute for Nanoelectronic Devices and Quantum Computing Fudan UniversityShanghai 200433China Interdisciplinary Center for Theoretical physics and Information Sciences Fudan UniversityShanghai 200433China Center for Advanced Quantum Studies and department of physics Beijing Normal UniversityBeijing 100875China laboratory of Advanced Materials Shanghai Key Lab of Molecular Catalysis and Innovative MaterialsAcademy for Engineering&TechnologyFudan UniversityShanghai 200438China Shanghai key laboratory of Special Artiﬁcial Microstructure Materials and Technology School of Physics Science and EngineeringTongji UniversityShanghai 200092China Zhejiang laboratory Hangzhou 311100China Shanghai Research Center for Quantum Sciences Shanghai 201315China Shanghai key laboratory of Metasurfaces for Light Manipulation Fudan UniversityShanghai 200433China

The conventional Hall effect is linearly proportional to the field component or magnetization component perpendicular to a film. Despite the increasing theoretical proposals on the Hall effect to the in-plane field or magnetization in various special systems induced by the Berry curvature, such an unconventional Hall effect has only been experimentally reported in Weyl semimetals and in a heterodimensional superlattice. Here, we report an unambiguous experimental observation of the antisymmetric planar Hall effect(APHE) with respect to the in-plane magnetic field in centrosymmetric rutile RuO_(2) and IrO_(2) single-crystal films. The measured Hall resistivity is found to be linearly proportional to the component of the applied in-plane magnetic field along a particular crystal axis and to be independent of the current direction or temperature. Both the experimental observations and theoretical calculations confirm that the APHE in rutile oxide films is induced by the Lorentz force. Our findings can be generalized to ferromagnetic materials for the discovery of anomalous Hall effects and quantum anomalous Hall effects induced by in-plane magnetization. In addition to significantly expanding knowledge of the Hall effect, this work opens the door to explore new members in the Hall effect family.

关键词： Antisymmetric planar Hall effect Lorentz force Rutile oxide films Crystal symmetry

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A deep learning interatomic potential suitable for simulating radiation damage in bulk tungsten

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Tungsten 2024年第2期6卷 304-322页

作者： Chang-Jie Ding Ya-Wei Lei Xiao-Yang Wang Xiao-Lin Li Xiang-Yan Li Yan-Ge Zhang Yi-Chun Xu Chang-Song Liu Xue-Bang Wu key laboratory of Materials physics Institute of Solid State PhysicsHFIPSChinese Academy of SciencesHefei 230031China Science Island University of Science and Technology of ChinaHefei 230026China laboratory of Computational physics Institute of Applied Physics and Computational MathematicsBeijing 100088China

So far, it has been a challenge for existing interatomic potentials to accurately describe a wide range of physical properties and maintain reasonable efficiency. In this work, we develop an interatomic potential for simulating radiation damage in body-centered cubic tungsten by employing deep potential, a neural network-based deep learning model for representing the potential energy surface. The resulting potential predicts a variety of physical properties consistent with first-principles calculations, including phonon spectrum, thermal expansion, generalized stacking fault energies, energetics of free surfaces, point defects, vacancy clusters, and prismatic dislocation loops. Specifically, we investigated the elasticity-related properties of prismatic dislocation loops, i.e., their dipole tensors, relaxation volumes, and elastic interaction energies. This potential is found to predict the maximal elastic interaction energy between two 1/2 loops better than previous potentials, with a relative error of only 7.6%. The predicted threshold displacement energies are in reasonable agreement with experimental results, with an average of 128 eV. The efficiency of the present potential is also comparable to the tabulated gaussian approximation potentials and modified embedded atom method potentials, meanwhile, can be further accelerated by graphical processing units. Extensive benchmark tests indicate that this potential has a relatively good balance between accuracy, transferability, and efficiency.

关键词： Machine learning Deep learning Interatomic potential Radiation damage Tungsten

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High-Quality van der Waals Epitaxial CsPbBr3 Film Grown on Monolayer Graphene Covered TiO2 for High-Performance Solar Cells

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Energy & Environmental Materials 2024年第4期7卷 239-246页

作者： Zhaorui Wen Chao Liang Shengwen Li Gang Wang Bingchen He Hao Gu Junpeng Xie Hui Pan Zhenhuang Su Xingyu Gao Guo Hong Shi Chen Institute of Applied physics and Materials Engineering University of Macau MOE key laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter State Key Laboratory for Mechanical Behavior of Materials School of Physics Xi'an Jiaotong University Shanghai Institute of Applied physics Chinese Academy of Sciences department of Materials Science and Engineering & Center of Super-Diamond and Advanced Films City University of Hong Kong

Two-dimensional materials have been widely used to tune the growth and energy-level alignment of ***,their incomplete passivation and chaotic usage amounts are not conducive to the preparation of highquality perovskite ***,we succeeded in obtaining higher-quality CsPbBr3films by introducing large-area monolayer graphene as a stable physical overlay on top of TiO2substrates.

关键词： all-inorganic perovskite solar cells buried interface modification monolayer graphene van der Waals epitaxial growth

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Production and test of sPHENIX W/SciFiber electromagnetic calorimeter blocks in China

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Nuclear Science and Techniques 2024年第8期35卷 167-176页

作者： Xiao‑Zhou Yu Xi‑Yang Wang Wei‑Hu Ma Shi‑Hong Fu Peng‑Fei Sun Jin‑Xing Song Wan‑Bing He Yang Shen Long Ma Jin‑Hui Chen Huan‑Zhong Huang Si‑Guang Wang Jing Zhou Xiao‑Mei Li Institute of Modern physics Fudan UniversityShanghai 200433China key laboratory of Nuclear physics and Ion‑Beam Application(MOE) Fudan UniversityShanghai 200433China Science and Technology on Nuclear Data laboratory China Institute of Atomic EnergyBeijing 102413China department of physics and Astronomy University of CaliforniaLos AngelesCA 90095USA state key laboratory of Nuclear physics and Technology School of PhysicsPeking UniversityBeijing 100871China

The sPHENIX experiment is a new generation of large acceptance detectors at the relativistic heavy ion collider at Brookhaven National laboratory,with scientific goals focusing on probing the strongly interacting Quark–Gluon plasma with hard probes of jets,open heavy flavor particles,andγ*** EMCal detector,which covers the pseudo-rapidity region of|η|≤1.1,is an essential subsystem of *** this study,we focused on producing and testing EMCal blocks covering a pseudo-rapidity of|η|∈[0.8,1.1].These,in conjunction with the central pseudo-rapidity EMCal blocks,significantly enhance the sPHENIX physics capability of the jet andγparticle *** this paper,the detector module production and testing of sPHENIX W-powder/scintillating fiber(W/ScFi)electromagnetic calorimeter blocks are *** selection of the tungsten powder,mold fabrication,QA procedures,and cosmic ray test results are discussed.

关键词： sPHENIX Tungsten/scintillating fiber electromagnetic calorimeter Cosmic ray test

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