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Laser manufacturing of spatial resolution approaching quantum limit

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Light(Science & Applications) 2024年第3期13卷 421-428页

作者： Xiao-Jie Wang Hong-Hua Fang Zhen-Ze Li Dan Wang Hong-Bo Sun state key laboratory of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijing 100084China state key laboratory of integrated Optoelectronics College of Electronic Science and EngineeringJilin University2699 Qianjin StreetChangchun 130012China

Atomic and close-to-atom scale manufacturing is a promising avenue toward single-photon emitters,single-electron transistors,single-atom memory,and quantum-bit devices for future communication,computation,and sensing *** manufacturing is outstanding to this end for ease of beam manipulation,batch production,and no requirement for *** is,however,suffering from optical diffraction ***,we report a spatial resolution improved to the quantum limit by exploiting a threshold tracing and lock-in method,whereby the two-order gap between atomic point defect complexes and optical diffraction limit is surpassed,and a feature size ofintegrated quantum technological applications.

关键词： quantum limit resolution

Optimal parameter space for stabilizing the ferroelectric phase of Hf_(0.5)Zr_(0.5)O_(2) thin films under strain and electric fields

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Chinese Physics B 2024年第7期33卷 509-517页

作者：王侣锦王聪周霖蔚周谐宇潘宇浩吴幸季威 Beijing key laboratory of Optoelectronic Functional Materials&Micro-Nano devices Department of PhysicsRenmin University of ChinaBeijing 100872China key laboratory of Quantum state Construction and Manipulation(Ministry of Education) Renmin University of ChinaBeijing 100872China In Situ devices Center School of Integrated CircuitsEast China Normal UniversityShanghai 200241China

Hafnia-based ferroelectric materials, like Hf_(0.5)Zr_(0.5)O_(2)(HZO), have received tremendous attention owing to their potentials for building ultra-thin ferroelectric devices. The orthorhombic(O)-phase of HZO is ferroelectric but metastable in its bulk form under ambient conditions, which poses a considerable challenge to maintaining the operation performance of HZO-based ferroelectric devices. Here, we theoretically addressed this issue that provides parameter spaces for stabilizing the O-phase of HZO thin-films under various conditions. Three mechanisms were found to be capable of lowering the relative energy of the O-phase, namely, more significant surface-bulk portion of(111) surfaces, compressive c-axis strain,and positive electric fields. Considering these mechanisms, we plotted two ternary phase diagrams for HZO thin-films where the strain was applied along the in-plane uniaxial and biaxial, respectively. These diagrams indicate the O-phase could be stabilized by solely shrinking the film-thickness below 12.26 nm, ascribed to its lower surface energies. All these results shed considerable light on designing more robust and higher-performance ferroelectric devices.

关键词： Hf_(0.5)Zr_(0.5)O_(2) orthorhombic phase ferroelectric films phase stability thickness-dependent ternary phase diagrams

Dynamic response of a thermal transistor to time-varying signals

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Chinese Physics B 2024年第5期33卷 13-19页

作者：阮琴丽刘文君王雷 Department of Physics Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devicesand Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education)Renmin University of ChinaBeijing 100872China

Thermal transistor,the thermal analog of an electronic transistor,is one of the most important thermal devices for microscopic-scale heat *** is a three-terminal device,and the heat current flowing through two terminals can be largely controlled by the temperature of the third *** response plays an important role in the application of electric devices and also thermal devices,which represents the devices’ability to treat fast varying *** this paper,we systematically study two typical dynamic responses of a thermal transistor,i.e.,the response to a step-function input(a switching process)and the response to a square-wave *** role of the length L of the control segment is carefully *** is revealed that when L is increased,the performance of the thermal transistor worsens *** the relaxation time for the former process and the cutoff frequency for the latter one follow the power-law dependence on L quite well,which agrees with our analytical ***,the detailed power exponents deviate from the expected values *** implies the violation of the conventional assumptions that we adopt.

关键词： phonon phononics thermal transistor dynamic response heat conduction

Relationship between disorder,magnetism and band topology in Mn(Sb_(1-x)Bi_(x))_(2)Te_(4) single crystals

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Chinese Physics B 2024年第6期33卷 102-107页

作者：席明雷和畅 Department of Physics and Beijing key laboratory of Opto-electronic Functional Materials&Micro-nano devices Renmin University of ChinaBeijing 100872China key laboratory of Quantum state Construction and Manipulation(Ministry of Education) Renmin University of ChinaBeijing 100872China

We investigate the evolution of magnetic properties as well as the content and distribution of Mn for Mn(Sb_(1-x)Bi_(x))_(2)Te_(4) single crystals grown by large-temperature-gradient chemical vapor transport *** is found that the ferromagnetic MnSb_(2)Te_(4) changes to antiferromagnetism with Bi doping when x≥*** analysis implies that the occupations of Mn ions at Sb/Bi site Mn_(Sb/Bi) and Mn site Mn_(Mn) have a strong influence on the magnetic ground states of these *** the decrease of Mn_(Mn) increase of Mn_(Sb/Bi),the system will favor the ferromagnetic ground *** addition,the rapid decrease of T_(C/N) with increasing Bi content when x ≤0.25 and the insensitivity of T_(N) to x when x> 0.25 suggest that the main magnetic interaction may change from the Ruderman-Kittel-Kasuya-Yosida type at low Bi doping region to the van-Vleck type in high Bi doped samples.

关键词： magnetic topological insulator magnetic properties antisite defects chemical vapor transport

Atomic transport dynamics in crossed optical dipole trap

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Chinese Physics B 2024年第7期33卷 293-301页

作者：彭鹏张正熙樊耀塬殷国玲毛德凯陈徐宗熊炜周小计 state key laboratory of Advanced Optical Communication System and Network School of ElectronicsPeking UniversityBeijing 100871China Institute of Carbon-based thin Film electronics Peking UniversityTaiyuan 030012China state key laboratory of Quantum Optics and Quantum Optics devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China

We study the dynamical evolution of cold atoms in crossed optical dipole trap theoretically and experimentally. The atomic transport process is accompanied by two competitive kinds of physical mechanics, atomic loading and atomic *** loading process normally is negligible in the evaporative cooling experiment on the ground, while it is significant in preparation of ultra-cold atoms in the space station. Normally, the atomic loading process is much weaker than the atomic loss process, and the atomic number in the central region of the trap decreases monotonically, as reported in previous research. However, when the atomic loading process is comparable to the atomic loss process, the atomic number in the central region of the trap will initially increase to a maximum value and then slowly decrease, and we have observed the phenomenon first. The increase of atomic number in the central region of the trap shows the presence of the loading process, and this will be significant especially under microgravity conditions. We build a theoretical model to analyze the competitive relationship, which coincides with the experimental results well. Furthermore, we have also given the predicted evolutionary behaviors under different conditions. This research provides a solid foundation for further understanding of the atomic transport process in traps. The analysis of loading process is of significant importance for preparation of ultra-cold atoms in a crossed optical dipole trap under microgravity conditions.

关键词： cold atom crossed optical dipole trap transport process

Gigahertz frequency hopping in an optical phase-locked loop for Raman lasers

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Chinese Physics B 2024年第2期33卷 60-65页

作者：毛德凯税鸿冕殷国玲彭鹏王春唯周小计 state key laboratory of Advanced Optical Communication System and Network School of ElectronicsPeking UniversityBeijing 100871China Institute of Carbon-based thin Film electronics Peking UniversityTaiyuan 030012China state key laboratory of Quantum Optics and Quantum Optics devices Institute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Institute of Advanced Functional Materials and devices Shanxi UniversityTaiyuan 030031China

Raman lasers are essential in atomic physics,and the development of portable devices has posed requirements for time-division multiplexing of Raman *** demonstrate an innovative gigahertz frequency hopping approach of a slave Raman laser within an optical phase-locked loop(OPLL),which finds practical application in an atomic gravimeter,where the OPLL frequently switches between near-resonance lasers and significantly detuned Raman *** method merges the advantages of rapid and extensive frequency hopping with the OPLL’s inherent low phase noise,and exhibits a versatile range of applications in compact laser systems,promising advancements in portable instruments.

关键词： Raman lasers optical phase-locked loop frequency hopping

MOF-derived Se doped MnS/Ti_(3)C_(2)T_(x) as cathode and Zn-Ti_(3)C_(2)T_(x) membrane as anode for rocking-chair zinc-ion battery

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Nano Research 2024年第4期17卷 2781-2789页

作者： Kaisheng Sun Zemao Xiao Yunfei Shen Heng Lv Jianpeng Zhu Jianxiang Pang Yang Zheng Wenwen Kong Long Chen School of Chemistry and Chemical Engineering/state key laboratory Incubation Base for Green Processing of Chemical Engineering Shihezi UniversityShihezi 832003China CAS key laboratory of Functional Materials and devices for Special Environments Xinjiang Key Laboratory of Electronic Information Materials and DevicesCenter of Materials Science and Optoelectronics EngineeringXinjiang Technical Institute of Physics and Chemistry of CASUrumqi 830011China

Mn-based zinc ion battery has the advantages of low cost and high performance,which makes it the promising energy storage ***,the poor conductivity and the agglomeration in the synthesis process of manganese-based materials restrict the performance of ***,the Se-doped MnS/Ti_(3)C_(2)T_(x)(Se-MnS/Ti_(3)C_(2)T_(x))composite material derived from Mn-based metal-organic framework is *** tests show that Se-doped could generate S defects and enhance the electrochemical activity of *** the same time,the introduction of Ti_(3)C_(2)T_(x) substrate is conducive to exposing more sulfur defects and improving the utilization rate of *** the mechanism study,it is found that Se-MnS/Ti_(3)C_(2)T_(x) is transformed into S/Se co-doped Mn3O_(4) at the first charge,which innovatively elucidated the behavior of S/Se during *** the electrochemical performance test,the specific capacity can reach 74.7 mAh·g^(-1) at 5.0 A·g^(-1).In addition,the Zn-Ti_(3)C_(2)T_(x) membrane electrode is prepared by vacuum filtration as the zinc-poor anode,which is assembled into the rocking chair full battery to avoid dendrite growth and exhibit excellent rate *** addition of Zn2+weakens the electrostatic repulsion between the interlayers of MXene,and the formation of the folded morphology aids the penetration of the *** 1.0 A·g^(-1),the capacity can reach 50.6 mAh·g^(-1).This work is helpful to promote the research and development of the reaction mechanism of manganese based rocking chair batteries.

关键词： rocking-chair zinc-ion battery MnS Zn-Ti_(3)C_(2)T_(x) membrane Se doped Ti_(3)C_(2)T_(x) composite

High Power GaN Doubler with High Duty Cycle Pulse Based on Local Non-reflection Design

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Chinese Journal of electronics 2024年第5期33卷 1196-1203页

作者： Yazhou DONG Tianchi ZHOU Shixiong LIANG Guodong GU Hongji ZHOU Jianghua YU Hailong GUO Yaxin ZHANG School of electronic Science and Engineering University of Electronic Science and Technology of China National key laboratory of Solid-state Microwave devices and Circuits Hebei Semiconductor Research Institute

The study focuses on the development of gallium nitride(GaN) Schottky barrier diode(SBD) frequency doublers for terahertz technology. The low conversion efficiency of these doublers limits their practical applications. To address this challenge, the paper proposes a multi-objective local no-reflection design method based on a three-dimensional electromagnetic structure. The method aims to improve the coupling efficiency of input power and reduce the reflection of power output. Experimental results indicate that the proposed method significantly improves the performance of GaN SBD frequency doublers, achieving an efficiency of 16.9% and a peak output power of 160mW at 175 GHz. These results suggest that the method can contribute to the further development of GaN SBD frequency doublers for terahertz technology.

关键词： Couplings Schottky diodes Design methodology Schottky barriers Terahertz materials Power system harmonics Reflection Gallium nitride Frequency doubler Multi-objective optimization Local non-reflection design FREQUENCY DOUBLER RADAR

Optimal and robust control of population transfer in asymmetric quantum-dot molecules

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Chinese Physics B 2024年第2期33卷 353-359页

作者：郭裕马松山束传存 Hunan Provincial key laboratory of Flexible electronic Materials Genome Engineering School of Physics and Electronic ScienceChangsha University of Science and TechnologyChangsha 410114China Hunan key laboratory of Nanophotonics and devices School of PhysicsCentral South UniversityChangsha 410083China

We present an optimal and robust quantum control method for efficient population transfer in asymmetric double quantum-dot *** derive a long-duration control scheme that allows for highly efficient population transfer by accurately controlling the amplitude of a narrow-bandwidth *** overcome fluctuations in control field parameters,we employ a frequency-domain quantum optimal control theory method to optimize the spectral phase of a single pulse with broad bandwidth while preserving the spectral *** is shown that this spectral-phase-only optimization approach can successfully identify robust and optimal control fields,leading to efficient population transfer to the target state while concurrently suppressing population transfer to undesired *** method demonstrates resilience to fluctuations in control field parameters,making it a promising approach for reliable and efficient population transfer in practical applications.

关键词： population transfer quantum optimal control theory quantum-dot molecules