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SiC Double Trench MOSFET with Split Gate and integrated Schottky Barrier Diode for Ultra-low Power Loss and Improved Short-Circuit Capability

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Chinese Journal of electronics 2024年第5期33卷 1127-1136页

作者： Jinping ZHANG Qinglin WU Zixun CHEN Hua ZOU Bo ZHANG state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China

A silicon carbide（SiC） double trench metal-oxide-semiconductor field effect transistor（DTMOS） with split gate（SG） and integrated Schottky barrier diode（SBD） is proposed for the first *** proposed device features two enhanced deep trenches in the surface,in which a source-connected SG with a thicker dielectric layer is located at the bottom of the deep gate trench and an integrated SBD is located at the sidewall of the deep source trench（DST）.Combined with shielding effect provided by the P+shield layer under the DST and integrated SBD,the proposed structure not only reduces the reverse transfer capacitance(Crss) and gate-drain charge(Qgd) but also restrains the saturation drain current(Id,sat) and improves the diode performance of the *** analysis results show that compared with the Con-DTMOS and Con-DTMOS with external SBD diode,the turn-on loss(Eon) and turn-off loss(Eoff) for the proposed device are reduced by 56.4%/70.4% and 56.6%/69.9%,***,the Id,satat the Vgsof 18 V for the proposed device is reduced by 74.4% and the short-circuit withstand time(tSC) is improved by about 7.5 *** a result,an ultra-low power loss and improved short-circuit capability is obtained for the proposed device.

关键词： Performance evaluation Schottky diodes Time-frequency analysis Silicon carbide Simulation Schottky barriers Low power electronics Metal-oxide-semiconductor field effect transistor (MOSFET) Specific on resistance Reverse transfer capacitance High frequency figure of merit Forward conduction voltage drop Turn-on loss Turn-off loss Saturated drain current Short-circuit withstand time

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A highoutput PDMS-MXene/gelatin triboelectric nanogenerator with the petal surface-microstructure

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Nano Research 2024年第5期17卷 4151-4162页

作者： Zekun Wang Congcong Hao Mingzhe Cai Juan Cui Yongqiu Zheng Chenyang Xue key laboratory of Instrumentation Science&Dynamic Measurement Ministry of Education North University of ChinaTaiyuan 030051China state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 611731China

Triboelectric nanogenerator(TENG)has a promising future in the field of energy harvesting and self-powered sensing due to their simplicity in structure,low cost,and efficient energy harvesting from the surrounding *** output electrical performance of TENG can be improved by doping the friction material with functional materials and modifying the surface of the friction ***,the current method of adding functional materials to friction materials is costly and wasteful,and the method of modifying the surface structure of friction materials is cumbersome and not easy to *** this work,we present a polydimethylsiloxane(PDMS)-MXene/gelatin triboelectric nanogenerator(PMMG-TENG)based on petal surface-microstructures,which has the advantages of low cost,simple preparation,high output performance,and ecological *** doping 0.03 wt.%of MXene in PDMS,the output electrical performance of TENG can be significantly improved,with an output current increase of up to 139.7%.Four different petals are used as natural molds to prepare *** results show that PMMG-TENG with peony petal surface microstructure has the best electrical performance,and the output current increase of up to 228.17%compared with PMMG-TENG without *** PMMG-TENG with peony petal surface-microstructure exhibits excellent electrical performance,demonstrating a maximum open-circuit voltage of 417.39 V and a maximum short-circuit current of 12.01μA at a size of 3 cm×3 cm,and a maximum power density of 170μW/cm^(2) at a load resistance of 107Ω.The PMMG-TENG’s output performance after 10,000 cycles is consistent with the initial state,highlighting excellent output *** PMMG-TENG can easily light up at least 100 light emitting diodes(LEDs).(operating voltage 3V.)Gelatin film exhibits excellent degradation performance,with complete degradation time of only 150 s in water at a constant temperature of 75℃.PMMG-TENG not only shows excellent performance in

关键词： triboelectric nanogenerator(TENG) petal surface-microstructure gelatin MXene energy harvesting

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Low Loss and Low EMI Noise Trench IGBT with Shallow Emitter Trench Controlled P-Type Dummy Region

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Chinese Journal of electronics 2024年第2期33卷 326-335页

作者： Jinping ZHANG Xiaofeng LI Rongrong ZHU Kang WANG Bo ZHANG state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of China (UESTC) Institute of electronic and Information Engineering of UESTC in Guangdong

A novel trench insulated gate bipolar transistor（TIGBT） with a shallow emitter trench controlled P-type dummy region（STCP-TIGBT） is *** with the conventional TIGBT with floating P-type dummy region（CFP-TIGBT） and TIGBT with floating P-type dummy region and normally on hole path（HFPTIGBT）,the proposed STCP structure not only speeds up the extraction of excessive holes in the turn-off process but also reduces the Miller plateau charge(Qgc).Therefore,both the power loss and electromagnetic interference（EMI） noise are significantly *** results show that the Qgcof the proposed device is only 501 nC/cm2,which is reduced by 58.5% and 26.4% when compared to the CFP-TIGBT and HFP-TIGBT,*** same on-state voltage drop(Vceon) of 1.02 V,the turn-off loss(Eoff) of the proposed device is 13.49 mJ/cm2,which is 64.6%and 67.6% less than those of the CFP-TIGBT and HFP-TIGBT,***,the reverse recovery dVak/dt of the freewheeling diode at same turn-on loss(Eon) of 31.8 mJ/cm2for the proposed STCP-TIGBT is only 2.15 kV/μs,which is reduced by 91.3% and 57.2% when compared to 24.69 kV/μs and 5.02 kV/μs for the CFP-TIGBT and HFPTIGBT,*** reduced dV/dt significantly suppresses the electromagnetic interference noise generated by the proposed device.

关键词： Insulated gate bipolar transistors Electrodes Annealing Simulation Electromagnetic interference Noise Voltage

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Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes

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Chinese Physics B 2024年第10期33卷 458-464页

作者： Maojiu Luo Yourun Zhang Yucheng Wang Hang Chen Rong Zhou Zhi Wang Chao Lu Bo Zhang state key laboratory of electronic thin films and integrated devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China china Zhenhua Group Yongguang electronics Co. Ltd.Guiyang 550018China

A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion *** propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments *** irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse ***-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS *** combined the degraded performance of irradiated samples with SFs introduced by heavy ion ***,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion *** was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the *** proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.

关键词： 4H-SiC JBS diode heavy ion irradiation single event effect single event leakage current degradation

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Numerical design of an efficient Ho^(3+)-doped InF3 fiber laser at~3.2μm

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Journal of electronic Science and Technology 2024年第3期22卷 35-46页

作者： Shi-Yuan Zhou Hong-Yu Luo Ya-Zhou Wang Yong Liu state key laboratory of electronic thin films and integrated devices School of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China DTU Electro Technical University of DenmarkKongens Lyngby2800Denmark

In this work,we theoretically unlock the potential of Ho^(3+)-doped InF3 fiber for efficient~3.2μm laser generation(from the 5F4,5S2→5F5 transition),by employing a novel dual-wavelength pumping scheme at 1150 nm and 980 nm,for the first *** clad-coupled 1150 nm pumping of 5 W,~3.2μm power of 3.6 W has been predicted with the optical-to-optical efficiency of 14.4%.Further efficient power scaling,however,is blocked by the output saturation with 980 nm *** alleviate this behavior,the cascaded 5I5→5I6 transition,targeting~3.9μm,has been activated simultaneously,therefore accelerating the population circulation between the laser upper level 5F4,5S2 and long-lived 5I6 level under 980 nm *** a result,enhanced~3.2μm power of 4.68 W has been obtained with optical-to-optical efficiency of 15.6%.Meanwhile the~3.9μm laser,yielding power of 2.76 W with optical-to-optical efficiency of 9.2%,is theoretically achievable as well with a moderate heat load,of which the performance is even better than the prior experimentally and theoretically reported Ho^(3+)-doped InF3 fiber lasers emitting at~3.9μm *** work demonstrates a versatile platform for laser generation at~3.2μm and~3.9μm,thus providing the new opportunities for many potential applications,e.g.,polymer processing,infrared countermeasures,and free-space communications.

关键词： Cascaded Fiber laser Holmium Mid-infrared

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Skyrmion motion induced by spin-waves on magnetic nanotubes

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Chinese Physics B 2024年第10期33卷 413-418页

作者： Tijjani Abdulrazak Xuejuan Liu Zhenyu Wang Yunshan Cao Peng Yan School of Physics and state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 610054China Department of Physics Bayero UniversityKano-700006Nigeria School of Healthcare Technology Chengdu Neusoft UniversityChengdu 611844China

We investigate the skyrmion motion driven by spin waves on magnetic nanotubes through micromagnetic *** key results include demonstrating the stability and enhanced mobility of skyrmions on the edgeless nanotube geometry,which prevents destruction at boundaries—a common issue in planar *** explore the influence of the damping coefficient,amplitude,and frequency of microwaves on skyrmion dynamics,revealing a non-uniform velocity profile characterized by acceleration and deceleration *** results show that the skyrmion Hall effect is significantly modulated on nanotubes compared to planar models,with specific dependencies on the spin-wave *** findings provide insights into skyrmion manipulation for spintronic applications,highlighting the potential for high-speed and efficient information transport in magnonic devices.

关键词： ferromagnetic magnetic nanotube Mumax3 software skyrmion spin-wave

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Pressure-triggered stacking dependence of interlayer coupling in bilayer WS_(2)

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Science china(Physics,Mechanics & Astronomy) 2024年第8期67卷 177-186页

作者： Zejuan Zhang Chenyin Jiao Shenghai Pei Xilong Zhou Jiaze Qin Wanli Zhang Yu Zhou Zenghui Wang Juan Xia School of integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 611731China School of Physics and electronics Hunan Key Laboratory of Nanophotonics and DevicesCentral South UniversityChangsha 410083China

Tungsten disulfide(WS_(2))has been reported to show negligible stacking dependence under ambient conditions,impeding its further explorations on physical properties and potential ***,we realize efficient modulation of interlayer coupling in bilayer WS_(2)with 3R and 2H stackings by high pressure,and find that the pressure-triggered interlayer coupling and pressure-induced resonant-to-nonresonant transition exhibit prominent stacking dependence,which are experimentally observed for the first time in *** work may unleash the stacking degree of freedom in designing WS_(2)devices with tailored properties correlated to interlayer coupling.

关键词： tungsten disulfide pressure engineering stacking order interlayer coupling

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Fe-N_(x) sites coupled with core-shell FeS@C nanoparticles to boost the oxygen catalysis for rechargeable Zn-air batteries

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Journal of Energy Chemistry 2024年第3期90卷 565-577,I0013页

作者： Katam Srinivas Zhuo Chen Anran Chen Fei Ma Ming-qiang Zhu Yuanfu Chen School of integrated Circuit Science and Engineering and State Key Laboratory of Electronic Thin Films and Integrated DevicesUniversity of Electronic Science and Technology of ChinaChengdu 610054SichuanChina College of Mechanical and electronic Engineering Northwest A&F UniversityYangling 712100ShaanxiChina School of Materials and Energy Yunnan UniversityKunming 650091YunnanChina

The development of efficient single-atom catalysts(SACs) for the oxygen reduction reaction(ORR)remains a formidable challenge,primarily due to the symmetric charge distribution of metal singleatom sites(M-N_(4)).To address such issue,herein,Fe-N_(x) sites coupled synergistic catalysts fabrication strategy is presented to break the uniform electronic distribution,thus enhancing the intrinsic catalytic ***,atomically dispersed Fe-N_(x) sites supported on N/S-doped mesoporous carbon(NSC)coupled with FeS@C core-shell nanoparticles(FAS-NSC@950) is synthesized by a facile hydrothermal reaction and subsequent *** to the presence of an in situ-grown conductive graphitic layer(shell),the FeS nanoparticles(core) effectively adjust the electronic structure of single-atom Fe sites and facilitate the ORR kinetics via short/long-range coupling ***,FAS-NSC@950displays a more positive half-wave potential(E_(1/2)) of 0.871 V with a significantly boosted ORR kinetics(Tafel slope=52.2 mV dec^(-1)),outpacing the commercial Pt/C(E_(1/2)=0.84 V and Tafel slope=54.6 mV dec^(-1)).As a bifunctional electrocatalyst,it displays a smaller bifunctional activity parameter(ΔE) of 0.673 V,surpassing the Pt/C-RuO_(2) combination(ΔE=0.724 V).Besides,the FAS-NSC@950-based zincair battery(ZAB) displays superior power density,specific capacity,and long-term cycling performance to the Pt/C-Ir/C-based *** work significantly contributes to the field by offering a promising strategy to enhance the catalytic activity of SACs for ORR,with potential implications for energy conversion and storage technologies.

关键词： Fe-N_(x)sites Core-shell FeS@C Synergistic interactions Oxygen reduction reaction Zn-air battery

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Bismuth-free Mg_(3)Sb_(2) with enhanced room-temperature thermoelectric and mechanical properties

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Journal of Materiomics 2024年第5期10卷 1101-1108页

作者： Jie Song Peng Luo Hailong Sun Hezhang Li Chao Wang Yi Niu Jing Jiang Clean Energy Materials and Engineering Center State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu611731China The state key laboratory of Precision Measurement Technology and Instruments Department of Precision InstrumentTsinghua UniversityBeijing100084China

Thermoelectric materials are competitive candidates for special cooling ***_(3)Sb_(2)-based materials consisting of inexpensive ingredients have profound thermoelectric *** present,alloying with Mg_(3)Bi_(2) is the most effective approach to optimize the thermoelectric properties of Mg_(3)Sb_(2)-based ***,the extremely low abundance of bismuth in the crust contradicts its economic *** this work,the ZrO_(2) micro-particles were separated into the Mg_(3.2)Sb_(1.99)Te_(0.01).The doping effect of Zr atoms at Mg sites increased the electrical conductivity,and the combined secondary phase lowered the lattice thermal *** acceptable degradation in the Seebeck coefficient,the sample combined with 5%(in mass)ZrO_(2) exhibited a dimensionless figure of merit(zT)of 0.49 and a power factor of 2.7 mW·m^(−1)·K^(−2) near room *** average zT in the range from 300 K to 500 K reached 0.8,on par with the Mg_(3)Sb_(2) single bond Mg_(3)Bi_(2) ***,the compressive and bending strengths reach 669 MPa and 269 MPa,respectively,far superior to the common room-temperature *** secondary phase showed a surprising and uncostly promotion of the Mg_(3)Sb_(2)-based thermoelectric materials,impelling the realization of its commercial application.

关键词： Mg_(3)Sb_(2)-Mg_(3)Bi_(2)alloy Secondary phase Room-temperature thermoelectric properties Mechanical properties Inexpensive ingredients

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Frequency combs based on magnon-skyrmion interaction in magnetic nanotubes

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Chinese Physics B 2024年第8期33卷 505-509页

作者： Tijjani Abdulrazak 刘雪娟金哲珺雨曹云姗严鹏 School of Physics and state key laboratory of electronic thin films and integrated devices University of Electronic Science and Technology of ChinaChengdu 610054China Department of Physics Bayero UniversityKano-700006Nigeria School of Healthcare Technology Chengdu Neusoft UniversityChengdu 611844China

Within the magnonics community,there has been a lot of interests in the magnon–skyrmion *** and skyrmions are two intriguing phenomena in condensed matter physics,and magnetic nanotubes have emerged as a suitable platform to study their complex *** show that magnon frequency combs can be induced in magnetic nanotubes by three-wave mixing between the propagating magnons and *** study enriches our fundamental comprehension of magnon–skyrmion interactions and holds promise for developing innovative spintronic devices and *** frequency comb tunability and unique spectral features offer a rich platform for exploring novel avenues in magnetic nanotechnology.

关键词： ferromagnetic magnetic field magnon Mumax3 software skyrmion

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