Study of leakage current degradation based on stacking faults expansion in irradiated SiC junction barrier Schottky diodes

作     者：Maojiu Luo Yourun Zhang Yucheng Wang Hang Chen Rong Zhou Zhi Wang Chao Lu Bo Zhang 罗茂久;张有润;王煜丞;陈航;周嵘;王智;陆超;张波

作者机构：State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China China Zhenhua Group Yongguang Electronics Co.Ltd.Guiyang 550018China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2024年第33卷第10期

页      面：458-464页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：4H-SiC JBS diode heavy ion irradiation single event effect single event leakage current degradation 

摘      要：A comprehensive investigation was conducted to explore the degradation mechanism of leakage current in SiC junction barrier Schottky(JBS)diodes under heavy ion *** propose and verify that the generation of stacking faults(SFs)induced by the recombination of massive electron-hole pairs during irradiation is the cause of reverse leakage current degradation based on experiments *** irradiation experiment was carried out based on Ta ions with high linear energy transfer(LET)of 90.5 MeV/(mg/cm^(2)).It is observed that the leakage current of the diode undergoes the permanent increase during irradiation when biased at 20%of the rated reverse ***-PL spectroscopy and PL micro-imaging were utilized to detect the presence of SFs in the irradiated SiC JBS *** combined the degraded performance of irradiated samples with SFs introduced by heavy ion ***,three-dimensional(3D)TCAD simulation was employed to evaluate the excessive electron-hole pairs(EHPs)concentration excited by heavy ion *** was observed that the excessive hole concentration under irradiation exceeded significantly the threshold hole concentration necessary for the expansion of SFs in the *** proposed mechanism suggests that the process and material characteristics of the silicon carbide should be considered in order to reinforcing against the single event effect of SiC power devices.