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Evaluation of Crack-tip Stress in Titanium Oxide Film Using Piezo-spectroscopy Methods

材料热处理学报 2004年第5期25卷 183-185页

作者： WANKeshu ZHUWenliang PEZZOTTIGiuseppe MIAOLei TANEMURASakae ceramicphysicslaboratory＆researchinstitutefornanoscience RINKyotoInstituteofTechnologySakyo-kuMatsugasakiKyotoJapan DepartmentofEnvironmentalTechnologyandUrbanPlanning NagoyaInstituteofTechnologyGokisho-choShowa-kuNagoyaJapan

The biaxial piezo-spectroscopic coefficient of 530 nm cathodoluminescence band of polycrystalline anatase titanium oxide film was measured using a local calibration procedure. Firstly, the crack-tip stress intensity factor in titanium oxide was measured from the crack opening displacement of a Vickers indentation crack using both Irwin's formula and Fett's formula, and the validity of these two formulas was evaluated. The obtained value was about Ktip =1 MPa √m. In such a brittle material, the fracture toughness can be considered to be very close to the stress intensity factor measured in an equilibrium indentation crack (Ktip= Kc). From the Ktip value, we calculated the stress distribution ahead of the crack tip using principles of linear elastic fracture mechanics. An important finding was that the cathodoluminescence 530 nm band that originated from excitons self-trapped on TiO6 octahedra, is sensitive to stress. Using the shift of this peak and the calculated stress from linear elastic fracture mechanics, the biaxial piezo-spectroscopic coefficient of this band was determined (40 nm/GPa with a 20% error rate). Using this piezo-spectroscopic coefficient, approximate stress maps can be collected of unknown stress fields within thin films with high spatial resolution into the scanning electron microscope. The present experiments provide a vivid example of quantitative micromechanical stress analysis by piezo-spectroscopic techniques.

关键词：二氧化钛薄膜压电光谱学断裂韧度裂纹尖端应力

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Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVD

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材料热处理学报 2004年第05B期25卷 803-806页

作者： ZHUWen-liang ZHUJi-liang PEZZOTTIGiuseppe ceramicphysicslaboratory＆researchinstitutefornanoscience RINKyotoInstituteofTechnologySakyo-kuMatsugasaki606-8585KyotoJapan DepartmentofElectronicsandInformationScience KyotoInstituteofTechnologySakyo-kuMatsugasaki606-8585KyotoJapan

A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using a HMDS-C3H8-H2 system on 2 inch silicon substrates with the orientations of (100), (111), (110) and (211), respectively. Even though an initial carbonization was carried out to reduce the large lattice mismatch, residual stress could not be completely relieved, partly also due to the difference of their thermal expansion coefficients. Raman scattering studies for the specimens were performed to estimate the internal stress in the SiC epilayer and the substrate. Raman spectra were mapped out on the sample surface as well as on the cross section using an automated x-y stage with a spatial resolution capable of 100 nm. For all the samples, two Raman peaks corresponding to the transverse optical (TO) and longitudinal optical (LO) phonon modes were observed, even though the intensity varied with the polarization configurations. In the SiC epilayers, tensile stresses decrease away from the interface, while compressive stresses exist in the substrate, with the magnitudes dependent on the growth orientation. The lattice strains were discussed in terms of the elastic deformation theory for the comparison.

关键词：显微喇曼光谱学应力测定 3C-SiC 热壁CVD 外延生长

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