Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wall CVD

作     者：ZHUWen-liang ZHUJi-liang PEZZOTTIGiuseppe ZHU Wen-Hang1, ZHU Ji-liang2 and PEZZOTTI Giuseppe1 1. Ceramic Physics Laboratory & Research Institute for Nanoscience, RIN Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan 2. Department of Electronics and Information Science, Kyoto Institute of Technology, Sakyo-ku, Matsugasaki, 606-8585, Kyoto, Japan

作者机构：CeramicPhysicsLaboratory＆ResearchInstituteforNanoscienceRINKyotoInstituteofTechnologySakyo-kuMatsugasaki606-8585KyotoJapan DepartmentofElectronicsandInformationScienceKyotoInstituteofTechnologySakyo-kuMatsugasaki606-8585KyotoJapan 

出 版 物：《材料热处理学报》 (Transactions of Materials and Heat Treatment)

年 卷 期：2004年第25卷第05B期

页      面：803-806页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 080201[工学-机械制造及其自动化] 

主　　题：显微喇曼光谱学 应力测定 3C-SiC 热壁CVD 外延生长 

摘      要：A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using a HMDS-C3H8-H2 system on 2 inch silicon substrates with the orientations of (100), (111), (110) and (211), respectively. Even though an initial carbonization was carried out to reduce the large lattice mismatch, residual stress could not be completely relieved, partly also due to the difference of their thermal expansion coefficients. Raman scattering studies for the specimens were performed to estimate the internal stress in the SiC epilayer and the substrate. Raman spectra were mapped out on the sample surface as well as on the cross section using an automated x-y stage with a spatial resolution capable of 100 nm. For all the samples, two Raman peaks corresponding to the transverse optical (TO) and longitudinal optical (LO) phonon modes were observed, even though the intensity varied with the polarization configurations. In the SiC epilayers, tensile stresses decrease away from the interface, while compressive stresses exist in the substrate, with the magnitudes dependent on the growth orientation. The lattice strains were discussed in terms of the elastic deformation theory for the comparison.