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Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS_(2) field-effect transistor

Nano Research 2021年第7期14卷 2207-2214页

作者： Jae Young Park SangHyuk Yoo Byeongho Park Taekyeong Kim Young Tea Chun Jong Min Kim Keonwook Kang Soo Hyun Lee Seong Chan Jun Department of Mechanical Engineering Yonsei UniversitySeoul 03722Republic of Korea center for biomicrosystem Brain Science InstituteKorea Institute of Science and TechnologySeoul 02792Republic of Korea Sensor System Research center Korea Institute of Science and TechnologySeoul 02792Republic of Korea Department of Physics Hankuk University of Foreign StudiesYongin 17035Republic of Korea Division of Electronics and Electrical Information Engineering Korea Maritime and Ocean UniversityBusan 49112Republic of Korea Electrical Engineering Division Engineering Department University of CambridgeCambridgeCB3 OFAUK

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide(TFSI)-treated O-ReS_(2) field-effect *** ReS_(2) was compared with defect-mediated ReS_(2) to confirm whether the presence of defects on the interface enhances the interaction between O-ReS_(2) and TFSI *** to the experiment,density functional theory(DFT)calculation was performed,and the result indicated that the charge transfer between TFSI and O-ReS_(2) is more sensitive to external electric fields than that between TFSI and pristine ReS_(2).After TFSI treatment,the drain current of O-ReS_(2) FET was significantly increased up to 1,113.4 times except in the range of−0.32–0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules,contrary to a significant degradation in device performance in pristine ReS_(2) ***,in the treated O-ReS_(2) device,the dipole direction was highly influenced by the voltage sweep direction,generating a significant area of hysteresis in I–V and transfer characteristics,which was further verified by the surface potential ***,the dipole state was enhanced according to the wavelength of the light source and *** results indicate that TFSI-treated ReS_(2) FET has large potential for use as next-generation memristor,memory,and photodetector.

关键词： Two-dimensional material ReS_(2) field-effect transistor TFSI superacid dipole

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