Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS_(2) field-effect transistor

作     者：Jae Young Park SangHyuk Yoo Byeongho Park Taekyeong Kim Young Tea Chun Jong Min Kim Keonwook Kang Soo Hyun Lee Seong Chan Jun Jae Young Park;SangHyuk Yoo;Byeongho Park;Taekyeong Kim;Young Tea Chun;Jong Min Kim;Keonwook Kang;Soo Hyun Lee;Seong Chan Jun

作者机构：Department of Mechanical EngineeringYonsei UniversitySeoul 03722Republic of Korea Center for BiomicrosystemBrain Science InstituteKorea Institute of Science and TechnologySeoul 02792Republic of Korea Sensor System Research CenterKorea Institute of Science and TechnologySeoul 02792Republic of Korea Department of PhysicsHankuk University of Foreign StudiesYongin 17035Republic of Korea Division of Electronics and Electrical Information EngineeringKorea Maritime and Ocean UniversityBusan 49112Republic of Korea Electrical Engineering Division Engineering DepartmentUniversity of CambridgeCambridgeCB3 OFAUK 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2021年第14卷第7期

页      面：2207-2214页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

基　　金：This work was supported by the national research foundation of Korea(NRF)grant funded by the Korea government(MIST)(Nos.NRF-2019R1A2C2090443,NRF-2017M3A7B4041987,NRF-2020M3F6A1081009,and NRF-2017M1A3A3A02015033) Korea Electric Power Corporation.(Grant No.R19XO01-23) 

主　　题：Two-dimensional material ReS_(2) field-effect transistor TFSI superacid dipole 

摘      要：We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide(TFSI)-treated O-ReS_(2) field-effect *** ReS_(2) was compared with defect-mediated ReS_(2) to confirm whether the presence of defects on the interface enhances the interaction between O-ReS_(2) and TFSI *** to the experiment,density functional theory(DFT)calculation was performed,and the result indicated that the charge transfer between TFSI and O-ReS_(2) is more sensitive to external electric fields than that between TFSI and pristine ReS_(2).After TFSI treatment,the drain current of O-ReS_(2) FET was significantly increased up to 1,113.4 times except in the range of−0.32–0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules,contrary to a significant degradation in device performance in pristine ReS_(2) ***,in the treated O-ReS_(2) device,the dipole direction was highly influenced by the voltage sweep direction,generating a significant area of hysteresis in I–V and transfer characteristics,which was further verified by the surface potential ***,the dipole state was enhanced according to the wavelength of the light source and *** results indicate that TFSI-treated ReS_(2) FET has large potential for use as next-generation memristor,memory,and photodetector.