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980 nm Near-Infrared Light-Emitting Diode Using All-Inorganic Perovskite Nanocrystals Doped with Ytterbium Ions

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Tsinghua Science and Technology 2024年第1期29卷 207-215页

作者： Zhenglan Ye Taoran Liu Dan Chen Yazhou Yang Jiayi Li Yaqing Pang Xiangquan Liu Yuhua Zuo Jun Zheng Zhi Liu Buwen Cheng State Key laboratory on Integrated Optoelectronics Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Intelligent Network research Institute Zhejiang LabHangzhou 311100China

All-inorganic perovskite(CsPbX3)nanocrystals(NCs)have recently been widely investigated as versatile solution-processable light-emitting *** to its wide-bandgap nature,the all-inorganic perovskite NC Light-Emitting Diode(LED)is limited to the visible region(400-700 nm).A particularly difficult challenge lies in the practical application of perovskite NCs in the infrared-spectrum *** this work,a 980 nm NIR all-inorganic perovskite NC LED is demonstrated,which is based on an efficient energy transfer from wide-bandgap materials(CsPbCl3 NCs)to ytterbium ions(Yb3+)as an NIR emitter doped in perovskite *** optimized CsPbCl3 NC with 15 mol%Yb3+doping concentration has the strongest 980 nm photoluminescence(PL)peak,with a PL quantum yield of 63%.An inverted perovskite NC LED is fabricated with the structure of ITO/PEDOT:PSS/poly-TPD/CsPbCl3:15 mol%Yb3+NCs/TPBi/LiF/*** LED has an External Quantum Efficiency(EQE)of 0.2%,a Full Width at Half Maximum(FWHM)of 47 nm,and a maximum luminescence of 182 cd/m?.The introduction of Yb3+doping in perovskite NCs makes it possible to expand its working wavelength to near-infrared band for next-generation light sources and shows potential applications for optoelectronic integration.

关键词： perovskite nanocrystals rare-earth doping Light-Emitting Diode(LED) near-infrared optical interconnection

Highly sensitive flexible strain sensor based on the two-dimensional semiconductor tellurium with a negative gauge factor

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Science China(Information Sciences) 2024年第7期67卷 295-304页

作者： Jiarui HE Yusong QU Shengyao CHEN Cong WANG Lena DU Xiaoshan DU Yuanyuan ZHENG Guozhong ZHAO He TIAN College of Mathematics and Physics Beijing University of Chemical Technology School of Integrated Circuits Tsinghua University Beijing China & The Beijing National Research Center for Information Science and Technology (BNRist)Tsinghua University CAS Center for Excellence in Nanoscience National Center for Nanoscience and Technology &University of Chinese Academy of Sciences Beijing Key lab of Terahertz Spectroscopy and Imaging Key Lab of Terahertz OptoelectronicsMinistry of Education Department of Physics Capital Normal University

research on flexible strain sensors has advanced rapidly in recent years, with particular attention being devoted to two-dimensional(2D) semiconductor materials owing to their exceptional mechanical and electrical properties that are conducive to sophisticated sensing performance. However, resistive strain sensors based on 2D semiconductor materials typically exhibit positive gauge factors(GF), while materials for strain sensors with a negative GF remain elusive. We have identified a trend of reduction in the band gap of the emerging 2D semiconductor material tellurium(Te) under strain in simulations reported in past research,and have observed a negative GF in the Te-based strain sensor. In this study, we combined Te with a flexible polyethylene terephthalate(PET) substrate to manufacture a flexible strain sensor with a significantly negative GF. The results of tests revealed that the Te-based strain sensor achieved an impressive maximum sensitivity of-139.7 within a small range of bending-induced strain(< 1%). Furthermore, it exhibited excellent linearity and good cyclic stability, and was successfully applied to monitor limb movements. The work here verifies the significant potential for the use of Te-based strain sensors in next-generation flexible electronics.

关键词： 2D semiconductor materials 2D tellurium flexible electronics strain sensors negative gauge factor high sensitivity

Deterministic relation between thermalphonon dressings and a non-Hermitian multi-Fano interferences router in iondoped microcrystals

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Chip 2024年第1期3卷 24-34页

作者： Huanrong Fan Faizan Raza Anas Mujahid Peng Li Yafen Wang Haitian Tang Muhammad Usman Bo Li Changbiao Li Yanpeng Zhang Key laboratory for Physical Electronics and Devices of the Ministry of Education&Shaanxi Key lab of Information Photonic Technique Xi’an Jiaotong UniversityXi’an 710049China Center for Regenerative and Reconstructive Medicine Med-X InstituteThe First Affiliated Hospital of Xi’an Jiaotong UniversityXi’an 710061China State Key lab of Modern Optical Instrumentation Centre for Optical and Electromagnetic ResearchCollege of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang UniversityHangzhou 310058China

The multi-Fano interference,which is obtained through the simultaneous acquisition of bright and dark states in different phase transitions of Eu3+:BiPO4(7:1,6:1,1:1,and 0.5:1)and Eu3+:NaYF4(1:1/4)crystals,were reported in this *** spontaneous four-wave mixing and multidressed fluorescence(multiorder)were adopted to optimize the strong photon–phonon nested dressing effect,which results in more obvious multi-Fano ***,the multi-Fano is produced through interference in continuous and multibound ***,five multi-Fano dips are originated from the nested five dressings(one photon and four phonons)under symmetrical splitting of 7F1 energy *** is found that the pure H-phase(0.5:1)sample exhibits the strongest photon–phonon dressed effect(five Fano dips).Further,high-order non-Hermitian exceptional points in multi-Fano interference were investigated by adjusting the ratio of Rabi frequency to dephase rate through nested photon and phonon *** experimental results are validated by theoretical simulations,which may be applied to designing optoelectronic devices such as non-Hermitian multi-Fano interferences(multichannel)router.

关键词： Multi-Fano interferences Thermal-phonon dressings Non-Hermitian Router

Enhancing thermoelectric performance of p-type SnTe through manipulating energy band structures and decreasing electronic thermal conductivity

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Rare Metals 2024年第7期43卷 3232-3241页

作者： Xin Qian Hao-Ran Guo Jia-Xin Lyu Bang-Fu Ding Xing-Yuan San Xiao Zhang Jiang-Long Wang Shu-Fang Wang Hebei Key lab of Optic-Electronic Information and Materials College of Physics Science and TechnologyHebei UniversityBaoding 071002China College of Electron and Information Engineering Hebei UniversityBaoding 071002China research Institute for Frontier Science Beihang UniversityBeijing100191China

SnTe has received considerable attention as an environmentally friendly alternative to the representative thermoelectric material of ***,excessive hole carrier concentration in SnTe results in an extremely low Seebeck coefficient and high thermal conductivity,which makes it exhibit relatively inferior thermoelectric *** this work,the thermoelectric performance of p-type SnTe is enhanced through regulating its energy band structures and reducing its electronic thermal conductivity by combining Bi doping with CdSe ***,the carrier concentration of SnTe is successfully suppressed via Bi doping,which significantly decreases the electronic thermal ***,the convergence and flattening of the valence bands by alloying CdSe effectively improves the effective mass of SnTe while restraining its carrier ***,a maximum figure of merit(ZT) of~ 0.87 at 823 K and an average ZT of~ 0.51 at 300-823 K have been achieved in Sn_(0.96)Bi_(0.04)Te-5%*** results indicate that decreasing the electronic thermal conductivity is an effective means of improving the performance of thermoelectric materials with a high carrier concentration.

关键词： Thermoelectric materials SnTe Energy band structure Electronic thermal conductivity ZT value

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A review on the transformation of birnessite in the environment:Implication for the stabilization of heavy metals

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Journal of Environmental Sciences 2024年第5期139卷 496-515页

作者： Miao Shi Qingzhu Li Qingwei Wang Xuelei Yan Bensheng Li Linhai Feng Chao Wu Rongrong Qiu Hongkai Zhang Zhihui Yang Weichun Yang Qi Liao Liyuan Chai School of Metallurgy and Environment Central South UniversityChangsha 410083China National Engineering research Centre for Control and Treatment ofHeavy Metal Pollution Central South UniversityChangsha 410083China Water Pollution Control Technology Key lab of Hunan Province Changsha 410083China

Birnessite is ubiquitous in the natural environment where heavy metals are retained and easily *** surface properties and structure of birnessite change with the changes in external environmental conditions,which also affects the fate of heavy *** the effect and mechanism of the birnessite phase transition process on heavy metals is the key to taking effective measures to prevent and control heavy metal ***,the four transformation pathways of birnessite are summarized first in this ***,the relationship between transformation pathways and environmental conditions is *** relevant environmental conditions include abiotic(e.g.,co-existing ions,pH,oxygen pressure,temperature,electric field,light,aging,pressure)and biotic factors(e.g.,microorganisms,biomolecules).The phase transformation is achieved by the key intermediate of Mn(Ⅲ)through interlayer-condensation,folding,neutralizationdisproportionation,and dissolution-recrystallization *** AOS(average oxidation state)of Mn and interlayer spacing are closely correlated with the phase transformation of *** but not least,the mechanisms of heavy metals immobilization in the transformation process of birnessite are summed *** involve isomorphous substitution,redox,complexation,hydration/dehydration,*** transformation of birnessite and its implication on heavy metals will be helpful for understanding and predicting the behavior of heavy metals and the crucial phase of manganese oxides/hydroxides in natural and engineered environments.

关键词： Birnessite Transformation Heavy metals Pathways Mechanism

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An innovative heterogeneous transfer learning framework to enhance the scalability of deep reinforcement learning controllers in buildings with integrated energy systems

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Building Simulation 2024年第5期17卷 739-770页

作者： Davide Coraci Silvio Brandi Tianzhen Hong Alfonso Capozzoli Politecnico di Torino Department of EnergyTEBE research groupBAEDA Lab.Corso Duca degli Abruzzi 24Torino10129Italy Building Technology and Urban Systems Division Lawrence Berkeley National LaboratoryOne Cyclotron RoadBerkeleyCA 94720USA

Deep Reinforcement Learning(DRL)-based control shows enhanced performance in the management of integrated energy systems when compared with Rule-Based Controllers(RBCs),but it still lacks scalability and generalisation due to the necessity of using tailored models for the training *** Learning(TL)is a potential solution to address this ***,existing TL applications in building control have been mostly tested among buildings with similar features,not addressing the need to scale up advanced control in real-world scenarios with diverse energy *** paper assesses the performance of an online heterogeneous TL strategy,comparing it with RBC and offline and online DRL controllers in a simulation setup using EnergyPlus and *** study tests the transfer in both transductive and inductive settings of a DRL policy designed to manage a chiller coupled with a Thermal Energy Storage(TES).The control policy is pre-trained on a source building and transferred to various target buildings characterised by an integrated energy system including photovoltaic and battery energy storage systems,different building envelope features,occupancy schedule and boundary conditions(e.g.,weather and price signal).The TL approach incorporates model slicing,imitation learning and fine-tuning to handle diverse state spaces and reward functions between source and target *** show that the proposed methodology leads to a reduction of 10% in electricity cost and between 10% and 40% in the mean value of the daily average temperature violation rate compared to RBC and online DRL ***,online TL maximises self-sufficiency and self-consumption by 9% and 11% with respect to ***,online TL achieves worse performance compared to offline DRL in either transductive or inductive ***,offline Deep Reinforcement Learning(DRL)agents should be trained at least for 15 episodes to reach the same level of performance as the online

关键词： transfer learning reinforcement learning building control building energy management

Manipulating the Macroscopic and Microscopic Morphology of Large-Area Gravure-Printed ZnO Films for High-Performance Flexible Organic Solar Cells

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Energy & Environmental Materials 2024年第2期7卷 229-239页

作者： Zhenguo Wang Jingbo Guo Yaqin Pan Jin Fang Chao Gong Lixin Mo Qun Luo Jian Lin Changqi Ma School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China i-lab&Printable Electronics research Center Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of Sciences(CAS)Suzhou 215123China Beijing Engineering research Center of Printed Electronics Beijing Institute of Graphic CommunicationBeijing 102600China Jiangxi Institute of Nanotechnology Chinese Academy of Sciences(CAS)Nanchang 330200China

Gravure printing is a promising large-scale fabrication method for flexible organic solar cells(FOSCs)because it is compatible with two-dimension patternable roll-to-roll ***,the unsuitable rheological property of ZnO nanoinks resulted in unevenness and looseness of the gravure-printed ZnO interfacial *** we propose a strategy to manipulate the macroscopic and microscopic of the gravure-printed ZnO films through using mixed solvent and poly(vinylpyrrolidone)(PVP)*** regulation of drying speed effectively manipulates the droplets fusion and leveling process and eliminates the printing ribbing structure in the macroscopic *** additive of PVP effectively regulates the rheological property and improves the microscopic compactness of the *** this method,large-area ZnO∶PVP films(28×9 cm^(2))with excellent uniformity,compactness,conductivity,and bending durability were *** power conversion efficiencies of FOSCs with gravure-printed AgNWs and ZnO∶PVP films reached 14.34%and 17.07%for the 1 cm^(2)PM6:Y6 and PM6∶L8-BO flexible *** efficiency of 17.07%is the highest value to date for the 1 cm^(2)*** use of mixed solvent and PVP addition also significantly enlarged the printing window of ZnO ink,ensuring high-quality printed thin films with thicknesses varying from 30 to 100 nm.

关键词： flexible organic solar cell gravure printing large-area flexible interfacial layer rheology properties zinc oxide

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Paper Analytical Device for the Colourimetric Detection of Alkaline Phosphatase in Serum and Saliva

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Journal of Analysis and Testing 2024年第3期8卷 385-394页

作者： D.Alageswari A.LakshmiDevi P.E.Resmi P.V.Suneesh AarathiPradeep T.G.SatheeshBabu Department of Chemistry Amrita School of Physical Sciences Coimbatore Amrita Vishwa Vidyapeetham Amrita Biosensor research lab Amrita School of Engineering Coimbatore Amrita Vishwa Vidyapeetham Amrita Biomedical Engineering Centre Amrita School of Engineering Coimbatore Amrita Vishwa Vidyapeetham

A paper analytical device (PAD) was developed for the colourimetric estimation of alkaline phosphatase (ALP). ALP catalyzes the hydrolysis of disodium phenyl phosphate (DSPP) to phenol, which then undergoes oxidative coupling with4-aminoantipyrine (4-AAP) producing a reddish brown-coloured quinone imine. The colourimetric reaction tested in solution has been translated onto a PAD for the point of care (PoC) testing of ALP. A uniform colour was obtained in 25 min with the introduction of ALP onto the reagent drop cast paper device. The images obtained by scanning the PAD were processed using ImageJ software. The colour intensity obtained by image processing was proportional to the concentration of ALP present in the sample. ALP in serum and saliva samples were tested using the PAD in the range of 0 to 528 U/L and0 to 187 U/L, respectively. The interference studies revealed that the PAD was selective to ALP in the presence of other biomolecules. The PAD exhibited a limit of detection (LOD) of 3.3 U/L and a sensitivity of 48.36 a.u/Log(U/L) for serum ALP and LOD of 1.69 U/L and a sensitivity of 28.5 a.u/Log (U/L) for salivary ALP. The PAD showed good agreement with the clinical methods for real samples.

关键词： Alkaline phosphatase Colourimetry ImageJ Paper analytical device Point of care testing

Transient Voltage Support Strategy of Grid-forming Medium Voltage Photovoltaic Converter in the LCC-HVDC System

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CSEE Journal of Power and Energy Systems 2024年第5期10卷 1849-1864页

作者： Hong Lu Xianyong Xiao Guangfu Tang Zhiyuan He Zhiguang Lin Chong Gao Zixuan Zheng College of Electrical Engineering Sichuan UniversityChengdu 610065China State Key lab of Advance Power Transmission Technology China Electric Power Research InstituteBeijing 100192China College of Electrical Engineering Sichuan UniversityChengdu 610065China.

The participation of photovoltaic(PV)plants in supporting the transient voltage caused by commutation failure in the line-commutated-converter-based high voltage direct current(LCC-HVDC)system is of great significance,as it can enhance the DC transmission ***,it is found that the gridfollowing(GFL)PV converters face the problem of mismatch between reactive power response and transient voltage characteristic when the voltage converts from low voltage to overvoltage,further aggravating the overvoltage ***,this article proposes a transient voltage support strategy based on the gridforming(GFM)medium voltage PV *** proposed strategy takes the advantage of the close equivalent electrical distance between the converter and grid,which can autonomously control the converter terminal voltage through GFM control with adaptive voltage droop *** simulation results show that the proposed strategy can ensure the output reactive power of the PV converter quickly matches the transient voltage characteristic at different stages,indicating that the proposed strategy can effectively support the transient voltage.

关键词： Commutation failure grid-forming(GFM) photovoltaic(PV)converter reactive power response transient voltage