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Spin‑controlled topological phase transition in non‑Euclidean space

Frontiers of Optoelectronics 2024年第1期17卷 67-76页

作者： Zhuochen Du Jinze Gao Qiuchen Yan Cuicui Lu Xiaoyong Hu Qihuang Gong State key laboratory for Mesoscopic Physics and Department of Physics Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano‑OptoelectronicsBeijing Academy of Quantum Information SciencesPeking UniversityBeijing 100871China key laboratory of advanced Optoelectronic Quantum Architecture and Measurements of Ministry of Education Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic SystemsSchool of PhysicsBeijing Institute of TechnologyBeijing 100081China Peking University Yangtze Delta Institute of Optoelectronics Nantong 226010China Collaborative Innovation Center of Extreme Optics Shanxi UniversityTaiyuan 030006China Hefei National laboratory Hefei 230088China

Modulation of topological phase transition has been pursued by researchers in both condensed matter and optics research fields,and has been realized in Euclidean systems,such as topological photonic crystals,topological metamaterials,and coupled resonator arrays.However,the spin-controlled topological phase transition in non-Euclidean space has not yet been explored.Here,we propose a non-Euclidean configuration based on Mobius rings,and we demonstrate the spin-controlled transition between the topological edge state and the bulk state.The Mobius ring,which is designed to have an 8πperiod,has a square cross section at the twist beginning and the length/width evolves adiabatically along the loop,accompanied by conversion from transverse electric to transverse magnetic modes resulting from the spin-locked effect.The 8πperiod Mobius rings are used to construct Su–Schrieffer–Heeger configuration,and the configuration can support the topological edge states excited by circularly polarized light,and meanwhile a transition from the topological edge state to the bulk state can be realized by controlling circular polarization.In addition,the spin-controlled topological phase transition in non-Euclidean space is feasible for both Hermitian and non-Hermitian cases in 2D systems.This work provides a new degree of polarization to control topological photonic states based on the spin of Mobius rings and opens a way to tune the topological phase in non-Euclidean space.

关键词： Topological phase transition Non-Euclidean space Möbius ring Spin-locked effect

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Semantic segmentation via pixel-to-center similarity calculation

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CAAI Transactions on Intelligence technology 2024年第1期9卷 87-100页

作者： Dongyue Wu Zilin Guo Aoyan Li Changqian Yu Nong Sang Changxin Gao National key laboratory of science and technology on Multispectral information Processing School of Artificial Intelligence and AutomationHuazhong University of Science and TechnologyWuhanChina Meituan Inc. BeijingChina

Since the fully convolutional network has achieved great success in semantic segmentation,lots of works have been proposed to extract discriminative pixel representations.However,the authors observe that existing methods still suffer from two typical challenges:(i)The intra-class feature variation between different scenes may be large,leading to the difficulty in maintaining the consistency between same-class pixels from different scenes;(ii)The inter-class feature distinction in the same scene could be small,resulting in the limited performance to distinguish different classes in each scene.The authors first rethink se-mantic segmentation from a perspective of similarity between pixels and class centers.Each weight vector of the segmentation head represents its corresponding semantic class in the whole dataset,which can be regarded as the embedding of the class center.Thus,the pixel-wise classification amounts to computing similarity in the final feature space between pixels and the class centers.Under this novel view,the authors propose a Class Center Similarity(CCS)layer to address the above-mentioned challenges by generating adaptive class centers conditioned on each scenes and supervising the similarities between class centers.The CCS layer utilises the Adaptive Class Center Module to generate class centers conditioned on each scene,which adapt the large intra-class variation between different scenes.Specially designed Class Distance Loss(CD Loss)is introduced to control both inter-class and intra-class distances based on the predicted center-to-center and pixel-to-center similarity.Finally,the CCS layer outputs the processed pixel-to-center similarity as the segmentation prediction.Extensive experiments demonstrate that our model performs favourably against the state-of-the-art methods.

关键词： computer vision deep neural networks image segmentation scene understanding

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Gate-field control of valley polarization in valleytronics

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Chinese Physics B 2024年第6期33卷 2-12页

作者：张婷婷韩依琳张闰午余智明 Institute of Physics Chinese Academy of SciencesBeijing 100190China key laboratory of advanced Optoelectronic Quantum Architecture and Measurement Beijing Key Laboratory of Nanophotonics&Ultrafine Optoelectronic Systemsand School of PhysicsBeijing Institute of TechnologyBeijing 100081China

Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and wellseparated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information,leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus,a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley–layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.

关键词： band structure electronic transport optical properties spintronics

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The Journey/DAO/TAO of Embodied Intelligence: From Large Models to Foundation Intelligence and Parallel Intelligence

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IEEE/CAA Journal of Automatica Sinica 2024年第6期11卷 1313-1316页

作者： Tianyu Shen Jinlin Sun Shihan Kong Yutong Wang Juanjuan Li Xuan Li Fei-Yue Wang College of information science and technology Beijing University of Chemical TechnologyBeijing 100029China School of Electrical and information Engineering Jiangsu UniversityZhenjiang 212013China State key laboratory for Turbulence and Complex Systems Department of Advanced Manufacturing and RoboticsCollege of EngineeringPeking UniversityBeijing 100871China State key laboratory of Multimodal Artificial Intelligence Systems Institute of AutomationChinese Academy of SciencesBeijing 100190China Peng Cheng laboratory Shenzhen 518000China State key laboratory for Management and Control of Complex Systems Chinese Academy of SciencesBeijing 100190 Faculty of Innovation Engineering Macao University of Science and TechnologyMacao 999078China IEEE

THE tremendous impact of large models represented by ChatGPT[1]-[3]makes it necessary to con-sider the practical applications of such models[4].However,for an artificial intelligence(AI)to truly evolve,it needs to possess a physical“body”to transition from the virtual world to the real world and evolve through interaction with the real environments.In this context,“embodied intelligence”has sparked a new wave of research and technology,leading AI beyond the digital realm into a new paradigm that can actively act and perceive in a physical environment through tangible entities such as robots and automated devices[5].

关键词： Intelligence DAO TAO

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An isolated symmetrical 2T2R cell enabling high precision and high density for RRAM-based in-memory computing

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science China(information sciences) 2024年第5期67卷 287-294页

作者： Yaotian LING Zongwei WANG Yuhang YANG Lin BAO Shengyu BAO Qishen WANG Yimao CAI Ru HUANG School of Integrated Circuits Beijing Advanced Innovation Center for Integrated Circuits Peking University State key laboratory of information Photonics and Optical Communications Beijing University of Posts and Telecommunications

In-memory computing(IMC), leveraging emerging memories, holds significant promise in overcoming memory limitations and improving energy efficiency. However, the prevailing IMC array structure based on serially connected transistors and memory cells(1T1R/2T2R), along with the signed weight mapping scheme, can lead to asymmetrical weight sensing issues(AWS) due to electrical asymmetry within the1T1R/2T2R structure, particularly in highly scaled cells where the transistor's resistance becomes significant. In this paper, we propose and fabricate an electrically symmetric memory cell based on a physically isolated 2T2R structure for IMC. This design aims to enhance the precision and density of RRAM-based IMC arrays. The 2T2R cells are manufactured using the back-end-of-line(BEOL) process of a commercial40 nm technology platform. The feasibility of this design is verified through measured and simulated results,showcasing its capability to address the issue of AWS. Compared to conventional 2T2R cells, this design achieves a considerably smaller transistor footprint without compromising accuracy, while also improving integration density by 42.2%. These innovative memory cell advancements have the potential to further advance high-energy-efficient IMC technology.

关键词： RRAM 2T2R multi-level storage weight asymmetry in-memory computing

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Rheological Behaviors of Polymers with Nanoparticles Tethered at Each End

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Chinese Journal of Polymer science 2024年第3期42卷 400-406,I0009页

作者： Song-Qi Zhang Wen-Qing Wang Jia-Ping Lin Li-Quan Wang Shanghai key laboratory of advanced Polymeric Materials Key Laboratory for Ultrafine Materials of Ministry of EducationSchool of Materials Science and EngineeringEast China University of Science and TechnologyShanghai 200237China

The polymer with nanoparticles tethered at each end is a unique model for unraveling the effect of chain ends on the polymer dynamics. We investigated the rheological behavior of this kind of polymer by using nonequilibrium molecular dynamics simulation. The effect of polymer lengths and nanoparticle radii on the complex moduli and viscosity was examined. The dependence of complex moduli on the frequency becomes less pronounced as the polymer is short or the nanoparticle is large. The shear thinning behavior was revealed for these systems, and the scaling exponent of complex viscosity with respect to the frequency was found to change from-1/2 to-3/4 as the polymer shortens or the nanoparticle enlarges. The rheological behavior was further explained by analyzing the mean square distance of nanoparticles. The simulation results were compared with the existing experimental finding, showing an agreement. The work provides information for understanding the chain end effect on polymer rheology.

关键词： Polymer rheology Modulus Viscosity Molecular dynamics

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Localization effect in single crystal of RuAs2

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Chinese Physics B 2024年第4期33卷 620-625页

作者：易哲铠刘琪光双魁徐升岳小宇梁慧李娜周颖吴丹丹孙燕李秋菊程鹏夏天龙孙学峰王义炎 Anhui key laboratory of Magnetic Functional Materials and Devices Institute of Physical Science and Information TechnologyAnhui University Department of Physics and key laboratory of Strongly-Coupled Quantum Matter Physics (CAS) University of Science and Technology of China Department of Physics and beijing key laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin University of China School of Optical and Electronic information Suzhou City University School of Physics and Optoelectronic Engineering Anhui University Collaborative Innovation Center of advanced Microstructures Nanjing University

We report the magnetotransport and thermal properties of RuAs2single crystal. RuAs2exhibits semiconductor behavior and localization effect. The crossover from normal state to diffusive transport in the weak localization（WL） state and then to variable range hopping（VRH） transport in the strong localization state has been observed. The transitions can be reflected in the measurement of resistivity and Seebeck coefficient. Negative magnetoresistance（NMR） emerges with the appearance of localization effect and is gradually suppressed in high magnetic field. The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH. The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect. Our findings show that RuAs2is a suitable platform to study the localized state.

关键词： RuAs2 single crystal variable range hopping weak localization

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Bioinspired sensing-memory-computing integrated vision systems: biomimetic mechanisms, design principles, and applications

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science China(information sciences) 2024年第5期67卷 5-27页

作者： Yujie HUANG Yinlong TAN Yan KANG Yabo CHEN Yuhua TANG Tian JIANG Institute for Quantum information and State key laboratory of High Performance Computing College of Computer National University of Defense Technology College of advanced Interdisciplinary Studies National University of Defense Technology Institute for Quantum science and technology College of ScienceNational University of Defense Technology

With the explosion of sensory data in the Internet of Things(Io T) era, conventional machine vision systems are becoming increasingly difficult to meet the requirements of high efficiency, low energy consumption, and low latency due to their inherent shortcomings of separate sensing, memory, and computing units. Inspired by the retina and neuromorphic computing, the sensing-memory-computing integrated vision system(SMCVS) that features low power consumption, low latency, and high parallelism has been considered a promising technology to surpass the von Neumann architecture and realize strong artificial intelligence.Meanwhile, novel materials like two-dimensional semiconductors and quantum dots with novel optoelectronic performance provide hardware carriers for implementing integrated sensing-memory-computing architectures,attracting considerable attention. This paper reviews the recent research progress in bioinspired vision systems in terms of biomimetic mechanisms, design principles, computational architectures, and applications.Firstly, the biomimetic mechanisms are illustrated to guide the design of high-performance artificial visual perception systems. Then the research progress of optoelectronic-synapse-based bioinspired vision systems in the device principles and applications including image filtering, color recognition, visual adaptation, and motion detection are summarized. Finally, the challenges and future developing directions of the SMCVS are provided regarding bionic application, architecture design, and device fabrication.

关键词： sensing-memory-computing architecture neuromorphic computing retinomorphic device image recognition visual system

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Highly responsive broadband Si-based MoS2 phototransistor on high-k dielectric

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science China(information sciences) 2024年第6期67卷 180-189页

作者： Ali IMRAN Xin HE Jiwei LIU Qinghai ZHU Muhammad SULAMAN Fei XUE Mingsheng XU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University ZJU-Hangzhou Global Scientific and Technological Innovation Centre School of Materials science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University beijing key Lab of Nanophotonics and Ultrafine Optoelectronic Systems School of PhysicsBeijing Institute of Technology

The demand for photodetectors and image sensors has grown exponentially in the past decade in biomedical, security surveillance, robotics, automotive, quality control, image recognition, and military applications, due to their superior quality, broadband detection, lower noise, and economic viability. Here,we report a MoS2channel-based phototransistor over an HfO2/n-Si substrate isolated by an h BN layer. The high photoresponse is achieved through the integration of the photoconduction, photogating, and mobility enhancement process by utilizing excellent features of MoS2, HfO2/Si, and h BN. The capacitive coupling of the photogenerated carriers by high-k dielectric HfO2leads to modulation of MoS2Fermi level due to electrostatic doping. Furthermore, the MoS2also contributes to the photogeneration of carriers due to its semiconducting nature, leading to additional photocurrent. Ultimately, the combination of photogating,photoconduction, and swift carrier extraction with remarkable mobility of 11.65 cm2· V-1· s-1results in high responsivity, external quantum efficiency, and detectivity of 4.5 × 10～8A · W-1, 0.72 × 10～6, and 6.20× 1016Jones at 266 nm illumination, respectively. The device also demonstrates broadband photoresponse from 266–1000 nm wavelengths. The high responsivity distinguishes the potential of our device for the future of optoelectronics and broadband image sensing applications.

关键词： photogating photoconduction two-dimensional materials high $~k$ dielectric carrier scattering phototransistor

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Synergistically enhanced dielectric, insulating and thermally conductive performances of sandwich PMMA based dielectric films

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Progress in Natural science:Materials International 2024年第3期34卷 591-597页

作者： Dongmei Zhang Yufan Li Yuchao Li Zhonggui Sun Hanxue Zhu Lujia Yang Yanhu Zhan Yankai Li Shi Wang Jun-Wei Zha School of Mathematical sciences Liaocheng University School of Materials science and Engineering Liaocheng University State key laboratory of Organic Electronics and information Displays & Institute of advanced Materials (IAM) Nanjing University of Posts & Telecommunications School of Chemistry and Biological Engineering University of Science and Technology Beijing

A tri-layered(B-G-B) dielectric films were simply prepared by alternatively spin-coating boron nitride/polymethylmethacrylate(BN/PMMA, B) and graphene nanosheets(GNS/PMMA, G) compound solutions. The structure, morphology, thermal conductivity, and particularly the dielectric and relaxation behaviors were systematically studied. Results showed that a good exfoliation and dispersion of BN and GNS can be simply achieved through intensive mechanical compounding with PMMA in the internal mixer. The dielectric constant and breakdown strength of the obtained 1-3-1(B-G-B) sandwich composite film reached 4.3(@1 kHz) and 458.6kV/mm, being 119 % and 113 % higher than that of pure PMMA, respectively. Furthermore, the overall thermal conductivity of sandwich 1-3-1 composite increased by 112 % due to the addition of thermally conductive BN and GNS. The sandwich design strategy provided an effective way of achieving good permittivity, high insulation, and improved thermal conductivity simultaneously, showing potential applications in the miniaturization and integration of electronic devices.

关键词： Breakdown strength Composites Dielectric constant Sandwich structure Thermal conductivity

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