Gate-field control of valley polarization in valleytronics

作     者：张婷婷 韩依琳 张闰午 余智明 Ting-Ting Zhang;Yilin Han;Run-Wu Zhang;Zhi-Ming Yu

作者机构：Institute of PhysicsChinese Academy of SciencesBeijing 100190China Key Laboratory of Advanced Optoelectronic Quantum Architecture and MeasurementBeijing Key Laboratory of Nanophotonics&Ultrafine Optoelectronic Systemsand School of PhysicsBeijing Institute of TechnologyBeijing 100081China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2024年第33卷第6期

页      面：2-12页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant No. 12004035) the National Natural Science Fund for Excellent Young Scientists Fund Program(Overseas) 

主　　题：band structure electronic transport optical properties spintronics 

摘      要：Valleytronics materials are a kind of special semiconductors which can host multiple symmetry-connected and wellseparated electron or hole pockets in the Brillouin zone when the system is slightly n or p doped. Since the low-energy particles residing in these pockets generally are not easily scattered to each other by small perturbations, they are endowed with an additional valley degree of freedom. Analogous to spin, the valley freedom can be used to process information,leading to the concept of valleytronics. The prerequisite for valleytronics is the generation of valley polarization. Thus,a focus in this field is achieving the electric generation of valley polarization, especially the static generation by the gate electric field alone. In this work, we briefly review the latest progress in this research direction, focusing on the concepts of the couplings between valley and layer, i.e., the valley–layer coupling which permits the gate-field control of the valley polarization, the couplings between valley, layer, and spin in magnetic systems, the physical properties, the novel designing schemes for electronic devices, and the material realizations of the gate-controlled valleytronics materials.