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Enhancing efficiency and stability of organic solar cells through a simplified four-step synthesis of fully non-fused ring electron acceptor

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Journal of Energy Chemistry 2024年第6期93卷 601-608,I0015页

作者： Chenyang Han Huanhuan Gao Yanna Sun Yuanyuan Kan Zhaozhao Bi Wei Ma Yani Zhang Juan Antonio Zapien Yingguo Yang Ke Gao College of New Energy Xi’an Shiyou UniversityXi’an 710065ShaanxiChina Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion Institute of Frontier ChemistrySchool of Chemistry and Chemical EngineeringShandong UniversityQingdao 266237ShandongChina State Key Laboratory for Mechanical Behavior of Materials Xi’an Jiaotong UniversityXi’an 710049ShaanxiChina Department of Materials Science and Engineering City University of Hong KongKowloonHong Kong 99907China School of microelectronics Fudan UniversityShanghai 200433China

Design and synthesis of superior cost-effective non-fullerene acceptors(NFAs)are still big challenges for facilitating the commercialization of organic solar cells(OSCs),yet to be ***,two medium bandgap fully non-fused ring electron acceptors(NFREAs,medium bandgap,i,e.,1,3-1,8 eV),namely PTR-2Cl and PTR-4Cl are synthesized with only four steps by using intramolecular noncovalent interaction central core,structured alkyl side chain orientation linking units and flanking with different electron-withdrawing end *** them,PTR-4C1 exhibits increased average electrostatic potential(ESP)difference with polymer donor,enhanced crystallinity and compactπ-πstacking compared with the control molecule *** a result,the PTR-4Cl-based OSC achieved an impressive power conversion efficiency(PCE)of 14.72%,with a much higher open-circuit voltage(V_(OC))of 0.953 V and significantly improved fill factor(FF)of 0.758,demonstrating one of the best acceptor material in the top-performing fully NFREA-based OSCs with both high PCE and V_(OC).Notably,PTR-4Cl-based cells maintain a good T_80lifetime of its initial PCE after over 936 h under a continuous thermal annealing treatment and over1300 h T_(80)lifetime without *** work provides a cost-effective design strategy for NFREAs on obtaining high V_(OC),efficient exciton dissociation,and ordered molecular packing and thus high-efficiency and stable OSCs.

关键词： Organic solar cells Fully non-fused ring acceptors End group engineering Morphology regulation High efficiency

Mechanism of field-like torque in spin-orbit torque switching of perpendicular magnetic tunnel junction

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Science China(Physics,Mechanics & Astronomy) 2022年第10期65卷 109-114页

作者： Yudong Zhuo Wenlong Cai Daoqian Zhu Hongchao Zhang Ao Du Kaihua Cao Jialiang Yin Yan Huang Kewen Shi Weisheng Zhao Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China

The current-induced spin-orbit torque(SOT) is one of the most promising ways for high speed and low power spintronics devices. However, the mechanism of SOT driven magnetization reversal, especially the role of the field-like torque(FLT), is still unclear. Here, we report the observed promotion and suppression of switching by FLT, which depends on the relative direction of FLT and spin polarization. Our results reveal that the FLT could modulate the switching speed and power consumption by affecting the work done by the damping-like torque, and leads two different reversal dynamical paths during the ***, the origin of incubation time in SOT induced switching is clarified simultaneously.

关键词： spin-orbit torque field-like torque magnetization reversal magnetic tunnel junction

Waveform simulation in PandaX-4T

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Chinese Physics C 2024年第7期48卷 1-13页

作者：李家富阿卜杜萨拉姆薄子豪陈葳谌勋程晨成赵侃崔祥仪樊英杰方德清耿立升 Karl Giboni 郭绪元韩晨成韩柯何昶达何金荣黄迪黄俊挺黄周侯汝全侯钰季向东巨永林李晨翔李名川李帅杰李涛林箐刘江来陆聪聪芦晓盈罗棱尹罗云阳马文博马余刚冒亚军孟月宁旭阳庞彬宇祁宁春钱志成任祥祥 Nasir Shaheed 尚晓凤邵熙元申国防司琳孙文良谈安迪陶奕王安庆王萌王秋红王少博王思广王为王秀丽王旭王舟魏月环武蒙蒙邬维浩吴渊肖梦姣肖翔燕斌斌阎玺宇杨勇喻纯旭袁影苑哲运有辉曾鑫宁张敏桢张鹏张世博张澍张涛张威张洋张瀛心张园园赵力周济芳周宁周小朋周永周钰博周知震 School of Physics and Astronomy Shanghai Jiao Tong UniversityKey Laboratory for Particle Astrophysics and Cosmology(MoE)Shanghai Key Laboratory for Particle Physics and CosmologyShanghai 200240China State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei 230026China Department of Modern Physics University of Science and Technology of ChinaHefei 230026China School of Physics Beihang UniversityBeijing 102206China International research Center for Nuclei and Particles in the Cosmos&Beijing Key Laboratory of Advanced Nuclear Materials and Physics Beihang UniversityBeijing 100191China School of Physics and microelectronics Zhengzhou UniversityZhengzhou 450001China School of Physics Peking UniversityBeijing 100871China Yalong River Hydropower Development Company Ltd.288 Shuanglin RoadChengdu 610051China research Center for Particle Science and Technology Institute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao 266237China Key Laboratory of Particle Physics and Particle Irradiation of Ministry of Education Shandong UniversityQingdao 266237China Department of Physics University of MarylandCollege ParkMaryland 20742USA Tsung-Dao Lee institute Shanghai Jiao Tong UniversityShanghai200240China School of Mechanical Engineering Shanghai Jiao Tong UniversityShanghai 200240China School of Physics Sun Yat-Sen UniversityGuangzhou 510275China Sino-French institute of Nuclear Engineering and Technology Sun Yat-Sen UniversityZhuhai 519082China School of Physics and Astronomy Sun Yat-Sen UniversityZhuhai 519082China School of Physics Nankai UniversityTianjin 300071China Key Laboratory of Nuclear Physics and Ion-beam Application(MOE) Institute of Modern PhysicsFudan UniversityShanghai 200433China Shanghai Jiao Tong University Sichuan research institute Chengdu 610213China SJTU Paris Elite institute of Technology Shanghai Jiao Tong UniversityShanghai 200240China Department of Physics Yantai UniversityYantai 264005Ch

Signal reconstruction through software processing is a crucial component of the background and signal models in the PandaX-4T experiment,which is a multi-tonne dark matter direct search *** accuracy of signal reconstruction is influenced by various detector artifacts,including noise,dark count of photomultiplier,photoionization of impurities in the detector,and other relevant *** this study,we presented a detailed description of a semi-data-driven approach designed to simulate a signal *** work provides a reliable model for the efficiency and bias of the signal reconstruction in the data analysis of *** comparing critical variables that relate to the temporal shape and hit pattern of the signals,we found good agreement between the simulation and data.

关键词： dark matter time projection chamber simulation

Proximity-induced magnetic order in topological insulator on ferromagnetic semiconductor

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Science China(Information Sciences) 2023年第12期66卷 267-274页

作者： Hangtian WANG Koichi MURATA Weiran XIE Jing LI Jie ZHANG Kang L.WANG Weisheng ZHAO Tianxiao NIE School of Integrated Circuit Science and Engineering and Advanced Innovation Center for Big Data and Brain Computing Beihang University beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang University Department of Electrical Engineering University of California

Introducing magnetic order into topological insulator(TI) to break the time-reversal symmetry can yield numerous fascinating physical phenomena,which brings new hope for the emerging spintronic *** proximity effect is regarded as a promising strategy that could advance the step for realistic application by choosing a suitable ferromagnetic layer with the merits of high Curie temperature and high compatibility with mainstream semiconductor ***,we prepare a Bi2Se3thin film on Sicompatible ferromagnetic semiconductor(FMS) of MnxGe1-xby molecular beam *** integration,the nonmagnetic Bi2Se3exhibits an anomalous Hall signal and a clear weak localization cusp in magnetoresistance until 150 K,confirming that a high-temperature magnetism can be induced by the proximity *** investigation of the magnetoconductance quantitatively indicates that the Bi2Se3conductance suffers a transition from weak antilocalization to weak localization behavior after integrating with MnxGe1-x,and an 80 meV bandgap is predicted to be opened in the surface states in Bi2Se3layer due to the proximityinduced *** results prove that the proximity effect could be an important method to achieve topological magnetism at high temperatures,and reveals its potential for the manipulation of the topological surface states.

关键词： topological insulator ferromagnetic semiconductor proximity effect quantum interference

Probing the magnetization switching with in-plane magnetic anisotropy through field-modified magnetoresistance measurement

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Chinese Physics B 2022年第1期31卷 101-106页

作者：郝润润张昆李迎港曹强张学莹朱大鹏赵巍胜 Fert Beijing institute MIIT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China Spintronics institute University of JinanJinan 250022China Truth Instruments Co.Ltd. Qingdao 266000Chin

Effective probing current-induced magnetization switching is highly required in the study of emerging spin-orbit torque(SOT)***,the measurement of in-plane magnetization switching typically relies on the giant/tunneling magnetoresistance measurement in a spin valve structure calling for complicated fabrication process,or the non-electric approach of Kerr imaging ***,we present a reliable and convenient method to electrically probe the SOT-induced in-plane magnetization switching in a simple Hall bar device through analyzing the MR signal modified by a magnetic *** this case,the symmetry of MR is broken,resulting in a resistance difference for opposite magnetization ***,the feasibility of our method is widely evidenced in heavy metal/ferromagnet(Pt/Ni_(20)Fe_(80) and W/Co_(20)Fe_(60)B_(20))and the topological insulator/ferromagnet(Bi_(2)Se_(3)/Ni_(20)Fe_(80)).Our work simplifies the characterization process of the in-plane magnetization switching,which can promote the development of SOT-based devices.

关键词： magnetoresistance in-plane magnetization switching electrical detection

Detecting neutrinos from supernova bursts in PandaX-4T

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Chinese Physics C 2024年第7期48卷 14-21页

作者：庞彬宇阿布都沙拉木·阿布都克力木薄子豪陈葳谌勋程晨成兆侃崔祥仪樊英杰方德清符长波付孟婷耿立升 Karl Giboni 顾琳慧郭绪元韩晨成韩柯何昶达何金荣黄迪黄彦霖黄俊挺黄周侯汝全侯钰季向东巨永林李晨翔李家富李名川李帅杰李涛林箐刘江来陆聪聪芦晓盈罗棱尹罗云阳马文博马余刚冒亚军孟月宁旭阳祁宁春钱志成任祥祥 Nasir Shaheed 尚晓凤邵熙元申国防司琳孙文良谈安迪陶奕王安庆王萌王秋红王少博王思广王为王秀丽王舟魏月环武蒙蒙邬维浩夏经铠肖梦姣肖翔谢鹏伟燕斌斌颜玺雨杨继军杨勇姚玉坤喻纯旭袁影苑哲鑫宁张丹张敏桢张鹏张世博张澍张涛张洋张瀛心张园园赵力郑其斌周济芳周宁周小朋周永周钰博 New Cornerstone Science Laboratory Tsung-Dao Lee InstituteShanghai Jiao Tong UniversityShanghai200240China research Center for Particle Science and Technology Institute of Frontier and Interdisciplinary ScienceShandong UniversityQingdao 266237ShandongChina Key Laboratory of Particle Physics and Particle Irradiation of Ministry of Education Shandong UniversityQingdao 266237ShandongChina School of Physics and Astronomy Shanghai Jiao Tong UniversityKey Laboratory for Particle Astrophysics and Cosmology(MoE)Shanghai Key Laboratory for Particle Physics and CosmologyShanghai 200240China Shanghai Jiao Tong University Sichuan research institute Chengdu 610213China School of Physics Sun Yat-Sen UniversityGuangzhou 510275China Sino-French institute of Nuclear Engineering and Technology Sun Yat-Sen UniversityZhuhai519082China Department of Physics Yantai UniversityYantai 264005China Key Laboratory of Nuclear Physics and Ion-beam Application(MOE) Institute of Modern PhysicsFudan UniversityShanghai 200433China School of Physics Peking UniversityBeijing 100871China School of Physics Beihang UniversityBeijing 102206China International research Center for Nuclei and Particles in the Cosmos&Beijing Key Laboratory of Advanced Nuclear Materials and Physics Beihang UniversityBeijing 100191China School of Physics and microelectronics Zhengzhou UniversityZhengzhouHenan 450001China Yalong River Hydropower Development Company Ltd.288 Shuanglin RoadChengdu 610051China School of Medical Instrument and Food Engineering University of Shanghai for Science and TechnologyShanghai 200093China School of Mechanical Engineering Shanghai Jiao Tong UniversityShanghai 200240China Department of Physics University of MarylandCollege ParkMaryland 20742USA State Key Laboratory of Particle Detection and Electronics University of Science and Technology of ChinaHefei 230026China Department of Modern Physics University of Science and Technology of ChinaHefei 230026China School of Physics Nankai UniversityTian

Neutrinos from core-collapse supernovae are essential for understanding neutrino physics and stellar ***-phase xenon dark matter detectors can be used to track explosions of galactic supernovae by detecting neutrinos through coherent elastic neutrino-nucleus *** this study,a variation of progenitor masses and explosion models are assumed to predict neutrino fluxes and spectra,which result in the number of expected neutrino events ranging from 6.6 to 13.7 at a distance of 10 kpc over a 10-s duration with negligible backgrounds at *** specialized triggering alarms for monitoring supernova burst neutrinos are *** efficiency of detecting supernova explosions at various distances in the Milky Way is *** alarms will be implemented in the real-time supernova monitoring system at PandaX-4T in the near future,which will provide supernova early warnings for the astronomical community.

关键词： core-collapse supernovae neutrinos liquid xenon detectors supernova early warnings

Mo-based perpendicularly magnetized thin films with low damping for fast and low-power consumption magnetic memory

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Science China(Physics,Mechanics & Astronomy) 2022年第8期65卷 129-139页

作者： Houyi Cheng Boyu Zhang Yong Xu Shiyang Lu Yuxuan Yao Rui Xiao Kaihua Cao Yongshan Liu Zilu Wang Renyou Xu Danrong Xiong Yan Wang Helin Ma Sylvain Eimer Chao Zhao Weisheng Zhao Fert Beijing institute Ministry of Industry and Information Technology Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing100191China Hefei Innovation research institute Anhui High Reliability Chips Engineering LaboratoryBeihang UniversityHefei230013China beihang-Geortek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao266000China Beijing Superstring Academy of Memory Technology Beijing100176China

Perpendicular magnetic anisotropy-based magnetic tunnel junctions(p-MTJs) with low Gilbert damping constant(α) are of particular interest for fast and low-power consumption magnetic random-access memory(MRAM). However, obtaining a faster switching speed and lower power consumption is still a big challenge. Herein, we report a Mo-based perpendicular double free layer structure with a low Gilbert damping constant of 0.02 relative to W-based films, as measured by time-resolved magnetooptical Kerr effect equipment. To show the influence of different film structures on the Gilbert damping constant, we measured the Mo-based single free layer. Thereafter, we deposited the full stacks with the Mo-based double free layer and obtained a high tunneling magnetoresistance of 136.3% and high thermal stability. The results of high-resolution transmission electron microscopy(HR-TEM) and energy-dispersive X-ray spectroscopy(EDS) showed that the Mo-based films had better crystallinity,sharper interfaces, and weaker diffusion than the W-based films and thus produced a weaker external contribution of the Gilbert damping constant. As a result of the weak spin-orbit coupling in the Mo-based structure, the intrinsic contribution of the Gilbert damping constant was also weak, thereby leading to the small Gilbert damping constant of the Mo-based stacks. In addition, the macro-spin simulation results demonstrated that the magnetization switching by the spin transfer torque of the Mo-based MTJs was faster than that of the W-based MTJs. These findings help to understand the mechanism behind the good performance of Mo-based p-MTJ films and show the great promise of these structures in low-power consumption MRAM or other spintronic devices.

关键词： CoFeB/MgO Gilbert damping constant perpendicular magnetic anisotropy fast and low-power consumption memory magnetic tunnel junctions

Perpendicular magnetic anisotropy based spintronics devices in Pt/Co stacks under different hard and flexible substrates

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Science China(Information Sciences) 2023年第2期66卷 256-266页

作者： Sylvain EIMER Houyi CHENG Jinji LI Xueying ZHANG Chao ZHAO Weisheng ZHAO Hefei Innovation research institute Anhui High Reliability Chips Engineering LaboratoryBeihang University Fert Beijing institute MIIT Key Laboratory of Spintronics School of Integrated Circuit Science and EngineeringBeihang University School of Physics and Quantum Information research Center Southeast University Truth Instruments Co.Ltd. beihang-Geortek Joint microelectronics institute Qingdao Research InstituteBeihang University Beijing Superstring Academy of Memory Technology

The magnetic properties in substrate/Pt/Co multilayers, such as perpendicular magnetic anisotropy(PMA), are of particular interest for spintronic devices. In particular, it is important to obtain a strong PMA on the flexible substrate in the field of wearable devices and structural health ***, the different stacks deposition and regulation conditions on the magnetic properties of the films lack systematic research. Here, we investigate the magnetic properties in Pt/Co structures with different hard and flexible substrates, layer thicknesses, and the different deposition temperatures of the buffer *** found that the coercive field and magnetodynamic behavior of the films change with these factors. Moreover, depositing the buffer layer under high temperature can effectively adjust the crystalline state of the films, thus affecting the performance of the films. After depositing the buffer layer at 800℃, our films can obtain a better crystalline state and PMA. The measurement results of the magneto-optical Kerr microscope show that the magnetic domain wall motion of the films can be controlled by different substrate and buffer layer conditions. It was expected that ultra-fast magnetic moment switching can be achieved by optimizing the conditions to reduce the power consumption of the device. The experimental results also show that the optimized film conditions can also obtain strong PMA on the flexible substrate. These findings help to understand magnetic properties in these structures and show the promising prospect for wearable devices and other spintronic devices.

关键词： Pt/Co stacks perpendicular magnetic anisotropy magnetodynamicbehavior spintronics flexible devices high temperature deposition

Observation of magnetic droplets in magnetic tunnel junctions

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Science China(Physics,Mechanics & Astronomy) 2022年第2期65卷 99-105页

作者： Kewen Shi Wenlong Cai Sheng Jiang Daoqian Zhu Kaihua Cao Zongxia Guo Jiaqi Wei Ao Du Zhi Li Yan Huang Jialiang Yin Johan Akerman Weisheng Zhao Fert Beijing institute M1IT Key Laboratory of SpintronicsSchool of Integrated Circuit Science and EngineeringBeihang UniversityBeijing 100191China beihang-Goertek Joint microelectronics institute Qingdao Research InstituteBeihang UniversityQingdao 266000China Department of Physics University of GothenburgGothenburg 41296Sweden Department of Applied Physics School of Engineering Sciences.KTH Royal Institute of TechnologyKista 16440Sweden School of microelectronics Northwestern Poly technical UniversityXi'an 710072China

Magnetic droplets,a class of highly nonlinear magnetodynamic solitons,can be nucleated and stabilized in nanocontact spintorque *** we experimentally demonstrate magnetic droplets in magnetic tunnel junctions(MTJs).The droplet nucleation is accompanied by power enhancement compared with its ferromagnetic resonance *** nucleation and stabilization of droplets are ascribed to the double-Co Fe B free-layer structure in the all-perpendicular MTJ,which provides a low Zhang-Li torque and a high pinning *** results enable better electrical sensitivity in fundamental studies of droplets and show that the droplets can be utilized in MTJ-based applications and materials science.

关键词： spin-torque nano-oscillators magnetic droplets spin dynamics magnetic tunnel junctions