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Localization effect in single crystal of RuAs2

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Chinese Physics B 2024年第4期33卷 620-625页

作者：易哲铠刘琪光双魁徐升岳小宇梁慧李娜周颖吴丹丹孙燕李秋菊程鹏夏天龙孙学峰王义炎 anhui key laboratory of Magnetic Functional materials and devices Institute of Physical Science and Information TechnologyAnhui University Department of Physics and key laboratory of Strongly-Coupled Quantum Matter Physics (CAS) University of Science and Technology of China Department of Physics and Beijing key laboratory of Opto-electronic Functional materials & Micro-nano devices Renmin University of China School of Optical and Electronic information Suzhou City University School of Physics and Optoelectronic Engineering Anhui University Collaborative Innovation Center of Advanced Microstructures Nanjing University

We report the magnetotransport and thermal properties of RuAs2single crystal. RuAs2exhibits semiconductor behavior and localization effect. The crossover from normal state to diffusive transport in the weak localization（WL） state and then to variable range hopping（VRH） transport in the strong localization state has been observed. The transitions can be reflected in the measurement of resistivity and Seebeck coefficient. Negative magnetoresistance（NMR） emerges with the appearance of localization effect and is gradually suppressed in high magnetic field. The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH. The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect. Our findings show that RuAs2is a suitable platform to study the localized state.

关键词： weak localization variable range hopping RuAs_2 single crystal

General synthesis of transition metal nitride arrays by ultrafast flash Joule heating within 500 ms

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Science China Chemistry 2024年第6期67卷 1976-1982页

作者： Peiqi Shen Jiahui Zhao Yanan Gao Yunxiang Lin Yuchen Han Kun Xu School of Chemistry and Chemical Engineering Key Laboratory of Functional Inorganic Material Chemistry of Anhui ProvinceAnhui Province Key Laboratory of Chemistry for Inorganic/Organic Hybrid Functionalized MaterialsKey Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of EducationAnhui UniversityHefei230601China Institutes of Physical Science and information Technology Center of Free Electron Laser&High Magnetic FieldLeibniz International Joint Research Center of Materials Sciences of Anhui ProvinceAnhui UniversityHefei230601China

Transition metal nitrides(TMNs)are considered as viable alternatives to noble metal catalysts owing to their versatile electronic structure and favorable catalytic ***,the conventional synthetic processes for TMNs suffer from high energy consumption and low production *** this study,a range of TMNs and their hetero-composite arrays were successfully synthesized via an ultrafast flash Joule heating technology within 0.5 *** a proof concept,the nitrides and hetero-composites were applied for the electrocatalytic hydrazine oxidation reaction(HzOR),in which the Co_(4)N/Mo_(16)N_(7)arrays shows the best performance with a geometric current density of 100 mA cm^(-2)at 23 mV(*** hydrogen electrode(RHE)).This work paves a new way for the ultrafast synthesis of TMNs which could meet the ever-increased energy crisis.

关键词： flash Joule heating rapid synthesis transition metal nitrides hydrazine oxidation reaction electrocatalysts

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Modified NiFe-MOF with defects induced by-NH_(2)and-SH for enhanced adsorption and photocatalytic reduction of CO_(2)

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Journal of materials Science & Technology 2024年第3期170卷 167-176页

作者： Ruting Huang Yeyin Zhang Wenqiang Li Wanxia Zhang Yong Fang Wenrui Zhang Anqi Cui Yu Ying Xianyang Shi information materials and Intelligent Sensing laboratory of anhui Province Anhui Province Key Laboratory of Wetland Ecosystem Protection and RestorationSchool of Resource and Environmental EngineeringAnhui UniversityHefei230601China key laboratory of Nutrient Cycling Resources and Environment of anhui Institute of Soil and FertilizerAnhui Academy of Agricultural SciencesHefei230001China

In this study,a Ni-Fe metal-organic framework modified by-NH_(2)and-SH was synthesized using a sim-ple hydrothermal process for enhancing photocatalytic CO_(2)*** expected,the N2S-NiFe(NH_(2)-BDC/H_(4)DSBDC,2:1)displayed excellent photocatalytic CO_(2)reduction activity and high CO selectivity(12,412.23μmol g^(−1)h^(−1))under visible light irradiation(λ≥420 nm),which is 5 times that of ***,the excellent photocatalytic performance of N2S-NiFe can benefit from the rich defect trap site caused by the introduction of amino and sulfhydryl groups,accelerating charge transfer and promoting space charge separation,as supported by the photo-electrochemical *** better understand the CO_(2)adsorption mechanism,density functional theory calculations were performed,which revealed that the Niov site has more negative adsorption energy compared with the Feov *** study provides a simple strategy to establish efficient photocatalysts for CO_(2)reduction through the modification of organic ligands.

关键词： NiFe-MOF CO_(2)reduction Defect structure Photocatalytic

Enhancing thermoelectric performance in P-type Mg_(3)Sb_(2)-based Zintls through optimization of band gap structure and nanostructuring

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Journal of materials Science & Technology 2024年第3期170卷 25-32页

作者： Yi-bo Zhang Ji-Sheng Liang Chengyan Liu Qi Zhou Zhe Xu Hong-bo Chen Fu-cong Li Ying Peng Lei Miao Guangxi key laboratory of information material Engineering Research Center of Electronic Information Materials and DevicesMinistry of EducationSchool of Material Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi key laboratory for Relativity Astrophysics Center on Nanoenergy ResearchGuangxi Key Laboratory of Processing for Nonferrous Metal and Featured MaterialsSchool of Physical Science&TechnologyGuangxi UniversityNanning 530004China Guangxi key laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologySchool of Information and CommunicationGuilin 541004China

P-type Mg_(3)Sb_(2)-based Zintls have attracted considerable interest in the thermoelectric(TE)field due to their environmental friendliness and low ***,compared to their n-type counterparts,they show relatively low TE performance,limiting their application in TE *** this work,we simultaneously introduce Bi alloying at Sb sites and Ag doping at Mg sites into the Mg_(3)Sb_(2)to coopera-tively optimize the electrical and thermal properties for the first time,acquiring the highest ZT value of∼0.85 at 723 K and a high average ZT of 0.39 in the temperature range of 323-723 K in sample Mg_(2.94)Ag_(0.06)Sb_(1.9)Bi_(0.1).The first-principle calculations show that the codoping of Ag and Bi can shift the Fermi level into the valence band and narrow the band gap,resulting in the increased carrier concentration from 3.50×10^(17)cm^(-3)in the reference Mg 3 Sb 0.9 Bi 0.1 to∼7.88×10^(19)cm^(-3)in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi *** a result,a remarkable power factor of∼778.9μW m^(-1)K^(-2)at 723 K is achieved in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi ***,a low lattice thermal conductivity of∼0.48 W m^(-1)K^(-1)at 723 K is also obtained with the help of phonon scattering at the distorted lattice,point defects,and nano-precipitates in sample Mg 2.94 Ag 0.06 Sb 0.9 Bi *** synergistic effect of using the multi-element co-doping/-alloying to optimize electrical properties in Mg_(3)Sb_(2)holds promise for further improving the TE performance of Zintl phase materials or even others.

关键词： Thermoelectric materials Band engineering Nanostructuring P-type Mg_(3)Sb_(2) Ag and Bi Co-doping

High-performance,low-power,and flexible ultraviolet photodetector based on crossed ZnO microwires p-n homojunction

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Photonics Research 2024年第4期12卷 648-662页

作者： SHULIN SHA KAI TANG MAOSHENG LIU PENG WAN CHENYANG ZHU DANING SHI CAIXIA KAN MINGMING JIANG College of Physics MIIT Key Laboratory of Aerospace Information Materials and PhysicsKey Laboratory for Intelligent Nano Materials and DevicesNanjing University of Aeronautics and AstronauticsNanjing 211106China

Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.

关键词： power ultraviolet conduction

Crystalline-amorphization-recrystallization structural transition and emergent superconductivity in van der Waals semiconductor SiP under compression

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Science China(Physics,Mechanics & Astronomy) 2024年第5期67卷 115-122页

作者： Chunhua Chen Zhenyu Ding Yonghui Zhou Yifang Yuan Nixian Qian Jing Wang Shuyang Wang Ying Zhou Chao An Min Zhang Xuliang Chen Xiaoping Yang Mingliang Tian Zhaorong Yang anhui key laboratory of Low-Energy Quantum materials and devices High Magnetic Field LaboratoryHFIPSChinese Academy of SciencesHefei 230031China Science Island Branch of Graduate School University of Science and Technology of ChinaHefei 230026China key laboratory of material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityHefei 230601China Institutes of Physical Science and information Technology Anhui UniversityZhengzhou 450001China Collaborative Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210093China

van der Waals(vdW)semiconductors have gained significant attention due to their unique physical properties and promising applications,which are embedded within distinct crystallographic ***,we report a pressure-induced crystallineamorphization-recrystallization transition under compression in binary vdW semiconductor *** compression to 52 GPa,bulk SiP undergoes a consecutive phase transition from pristine crystalline to amorphous phase,ultimately to recrystallized *** employing synchrotron X-ray diffraction experiments in conjunction with high-pressure crystal structure searching techniques,we reveal that the recrystallized Si P hosts a tetragonal structure(space group I4mm)and further transforms partially into a cubic phase(space group Fm3m).Consistently,electrical transport and alternating-current magnetic susceptibility measurements indicate the presence of three superconducting phases,which are embedded in separate crystallographic symmetries—the amorphous,tetragonal,and cubic ***,a high superconducting transition temperature of 12.3 K is observed in its recovered tetragonal phase during *** findings uncover a novel phase evolution path and elucidate a pressure-engineered structure-property relationship in vdW semiconductor *** results not only offer a new platform to explore the transformation between different structures and functionalities,but also provide new opportunities for the design and exploration of advanced devices based on vdW materials.

关键词： recrystallization transition amorphous

Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2

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Chinese Physics Letters 2024年第7期41卷 131-136页

作者：蔡明桔陈正杨扬朱相德孙浩翔朱安康刘学韩玉岩高文帅田明亮 Institutes of Physical Science and information Technology Anhui University anhui key laboratory of Low-energy Quantum materials and devices High Magnetic Field LaboratoryHefei Institutes of Physical Science Chinese Academy of Sciences Stony Brook Institute at anhui University Anhui University School of Mathematics and Physics Bengbu University School of Physics and Optoelectronics Engineering Anhui University

We systematically investigate in-plane transport properties of ternary chalcogenide *** rotating the magnetic field within the plane of the sample,one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance,and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect （PHE）.In addition,anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in *** finding not only provides another platform for understanding the mechanism of PHE,but could also be beneficial for future planar Hall sensors based on two-dimensional materials.

关键词： MAGNETORESISTANCE SUPERCONDUCTIVITY TRANSITION

Pressure-induced magnetic phase and structural transition in SmSb2

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Chinese Physics B 2024年第6期33卷 484-489页

作者：李涛王舒阳陈绪亮陈春华房勇杨昭荣 Science Island Branch of Graduate School University of Science and Technology of China anhui key laboratory of Low-Energy Quantum materials and devices High Magnetic Field LaboratoryHFIPS Chinese Academy of Sciences Jiangsu laboratory of Advanced Functional materials Department of Physics Changshu Institute of Technology Institutes of Physical Science and information Technology Anhui University Collaborative Innovation Center of Advanced Microstructures

Motivated by the recent discovery of unconventional superconductivity around a magnetic quantum critical point in pressurized CeSb2,here we present a high-pressure study of an isostructural antiferromagnetic（AFM） SmSb2through electrical transport and synchrotron x-ray diffraction *** PC～2.5 GPa,we found a pressure-induced magnetic phase transition accompanied by a Cmca→P4/nmm structural phase *** the pristine AFM phase below PC,the AFM transition temperature of SmSb2is insensitive to pressure;in the emergent magnetic phase above PC,however,the magnetic critical temperature increases rapidly with increasing *** addition,at ambient pressure,the magnetoresistivity（MR） of SmSb2increases suddenly upon cooling below the AFM transition temperature and presents linear nonsaturating behavior under high field at 2 *** increasing pressure above PC,the MR behavior remains similar to that observed at ambient pressure,both in terms of temperature-and field-dependent *** leads us to argue an AFM-like state for SmSb2above *** the investigated pressure of up to 45.3 GPa and the temperature of down to 1.8 K,we found no signature of superconductivity in SmSb2.

关键词： antiferromagnet high pressure magnetoresistivity structural transition

Enhanced thermoelectric performance enabled by compositing ZrO_(2)in n-type SiGe alloy with low thermal conductivity

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Rare Metals 2024年第3期43卷 1167-1176页

作者： Meng-Fei Wang Hua-Jun Lai Ji-Sheng Liang Jun-Liang Chen Wang-Yang Ding Qi Zhou Ying Peng Cheng-Yan Liu Lei Miao Guangxi key laboratory for Relativity Astrophysics State Key Laboratory of Featured Metal Materials and Life-Cycle Safety for Composite StructuresSchool of Physical Science and TechnologyGuangxi UniversityNanning530004China Guangxi Academy of Sciences Nanning530007China key laboratory of information material Engineering Research Center of Electronic Information Materials and DevicesGuilin University of Electronic TechnologyMinistry of EducationGuilin541004China Guangxi key laboratory of Precision Navigation Technology and Application School of Information and CommunicationGuilin University of Electronic TechnologyGuilin541004China

SiGe-based thermoelectric(TE)materials have gained increasing interests due to their low maintenance costs,environmental friendliness and long ***,the intrinsically high thermal conductivity of Si-based materials also results in poor TE *** this investigation,a zirconia(ZrO_(2))composite strategy was applied to an n-type SiGe alloy,tremendously elevating its TE *** mechanical alloying and spark plasma sintering(SPS)processes,the ZrO_(2)induced the formation of nanopores in the SiGe matrix via phosphorus ***,such increase in porosity enhanced the phonon scattering and dramatically suppressed lattice thermal conductivity,from 2.83 to 1.59 W·m^(-1)·K^(-1)at 873 ***,reduced phosphorus doping led to an increase in Seebeck coefficients and a relatively minor decrease in electrical conductivity,The power factor didn't deteriorate significantly,either,as its maximum of~3.43 mW·m^(-1-)K^(-2)was achieved at 873 K with(Si_(0.8)Ge_(0.2))_(0.097)P_(0.03)(ZrO_(2))_(0.003).In short,a peak figure of merit(ZT)of~1.27 at 873 K and an average ZT~0.7 from 323 to 873 K were *** study demonstrates that the electrical and thermal transportation of SiGe material can be synergistically tuned by compositing ZrO_(2),illustrating a novel strategy to optimize the TE properties of bulk materials.

关键词： Thermoelectric SiGe alloy ZrO2 composting P element adsorption nanopores