Planar Hall Effect in the Charge-Density-Wave Bi2Rh3Se2
作者机构：Institutes of Physical Science and Information Technology Anhui University Anhui Key Laboratory of Low-energy Quantum Materials and Devices High Magnetic Field LaboratoryHefei Institutes of Physical Science Chinese Academy of Sciences Stony Brook Institute at Anhui University Anhui University School of Mathematics and Physics Bengbu University School of Physics and Optoelectronics Engineering Anhui University
出 版 物：《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期：2024年第41卷第7期
页 面：131-136页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学]
基 金：supported by the National Natural Science Foundation of China (Grant Nos. U19A2093, 11904002, and 12074372) the Excellent Youth Project of Natural Science Foundation of Anhui Province (Grant No. 2308085Y07)
主 题：MAGNETORESISTANCE SUPERCONDUCTIVITY TRANSITION
摘 要：We systematically investigate in-plane transport properties of ternary chalcogenide *** rotating the magnetic field within the plane of the sample,one can distinctly detect the presence of both planar Hall resistance and anisotropic longitudinal resistance,and the phenomena appeared are precisely described by the theoretical formulation of the planar Hall effect （PHE）.In addition,anisotropic orbital magnetoresistance rather than topologically nontrivial chiral anomalies dominates the PHE in *** finding not only provides another platform for understanding the mechanism of PHE,but could also be beneficial for future planar Hall sensors based on two-dimensional materials.
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