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A 4 GHz quadrature output fractional-N frequency synthesizer for an IR-UWB transceiver

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Journal of Semiconductors 2010年第3期31卷 74-79页

作者：郭诗塔黄鲁袁海泉冯立松刘志明 department of Electronic science and technology University of Science and Technology of China

This paper describes a 4 GHz fractional-N frequency synthesizer for a 3.1 to 5 GHz IR-UWB transceiver. Designed in a 0.18μm mixed-signal ＆ RF 1P6M CMOS process, the operating range of the synthesizer is 3.74 to 4.44 GHz. By using an 18-bit third-order ∑-△ modulator, the synthesizer achieves a frequency resolution of 15 Hz when the reference frequency is 20 MHz. The measured amplitude mismatch and phase error between I and Q signals are less than 0.1 dB and 0.8° respectively. The measured phase noise is -116 dBc/Hz at 3 MHz offset for a 4 GHz output. Measured spurious tones are lower than -60 dBc. The settling time is within 80°s. The core circuit conupSigmaes only 38.2 mW from a 1.8 V power supply.

关键词： frequency synthesizer dual-modulus prescaler ∑-△ modulator QVCO

Magnetic and microwave properties of glass-coated amorphous ferromagnetic microwires

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中国有色金属学会会刊：英文版 2007年第6期17卷 1352-1357页

作者：邸永江江建军杜刚田斌别少伟何华辉 department of Electronic science and technology Huazhong University of Science and Technology

Glass-coated amorphous FeCuNbSiB microwires were prepared by Taylor-Ulitovsky technique. X-ray diffractometry and scanning electron microscopy were used to investigate the microstructure and morphology of the glass-coated microwires respectively. The vibrating sample magnetometer and vector network analyzer were used to study the magnetostatic and microwave properties of glass-coated microwires. The experimental results show that the effective anisotropy of an array of 150 microwires of 10 mm in length is large than that of one microwire of 10 mm in diameter and an array of 150 microwires of 1 mm in diameter. The natural ferromagnetic resonance takes place as the microwave magnetic component is perpendicular to the microwires axis, and the electric dipole resonance takes place as the microwire is long or the short microwire concentration is moderate. The natural ferromagnetic resonance shifts to higher frequency with the larger microwire concentration. The electric dipole resonance is governed by the microwires length and concentration. The glass-coated FeCuNbSiB microwires can be used to design EMI filters and microwave absorbing materials.

关键词：铁磁体微丝磁性质微波性质电偶极

An energy detection receiver for non-coherent IR-UWB

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Journal of Semiconductors 2011年第6期32卷 96-103页

作者：蔡力黄鲁傅忠谦杨静儿王卫东 department of Electronic science and technology University of Science and Technology of China

A non-coherent receiver for impulse radio ultra-wide band（IR-UWB）is *** proposed receiver front-end consists of a high gain LNA,a high frequency detector and an intermediate frequency（IF）amplifier to amplify the recovered signal and drive an external test *** meet the requirements of high gain and a low noise figure（NF）under moderate power consumption for the LNA,capacitor cross coupled（CCC）and current reuse techniques were *** detector consists of a squarer and an *** overall circuit consumes 41.2mA current with a supply voltage of 1.8 V at a 400 MHz pulse *** resulting energy efficiency is 0.19 nJ/pulse.A chip prototype is implemented in 0.18-μm *** die area is 2.1×1.4 mm^2 and the active area is 1.7×0.98 mm^2.

关键词： receiver IR-UWB non-coherent LNA detector

A 0.18μm CMOS inductorless complementary-noise-canceling-LNA for TV tuner applications

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Journal of Semiconductors 2010年第12期31卷 123-128页

作者：袁海泉林福江傅忠谦黄鲁 department of Electronic science and technology University of Science and Technology of China

This paper presents an inductorless complementary-noise-canceling LNA （CNCLNA） for TV tuners. The CNCLNA exploits single-to-differential topology, which consists of a common gate stage and a common source stage. The complementary topology can save power and improve the noise figure. Linearity is also enhanced by employing a multiple gated transistors technique. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed CNCLNA achieves 13.5-16 dB voltage gain from 50 to 860 MHz, the noise figure is below 4.5 dB and has a minimum value of 2.9 dB, and the best PIdB is -7.5 dBm at 860 MHz. The core consumes 6 mA current with a supply voltage of 1.8 V, while the core area is only 0.2 ×0.2 mm2.

关键词： noise cancellation LNA low-power multiple gated transistors complementary

Power dissipation characteristics of great power and super high speed semiconductor switch

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Chinese Physics B 2008年第7期17卷 2627-2632页

作者：梁琳余岳辉彭亚斌 department of Electronic science & technology Huazhong University of Science & Technology

The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.

关键词： reversely switched dynistor (RSD) pulsed power switch power dissipation

A 0.18 μm CMOS 3-5 GHz broadband flat gain low noise amplifier

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Journal of Semiconductors 2010年第2期31卷 38-44页

作者：冯立松黄鲁白雪飞席天佐 department of Electronic science and technology University of Science and Technology of China

A 3-5 GHz broadband flat gain differential low noise amplifier（LNA） is designed for the impulse radio ultra-wideband（IR-UWB） *** gain-flatten technique is adopted in this UWB *** and shunt peaking techniques are used to achieve broadband input matching and large gain-bandwidth product（GBW）.Feedback networks are introduced to further extend the bandwidth and diminish the gain *** prototype is fabricated in the SMIC 0.18μm RF CMOS *** results show a 3-dB gain bandwidth of 2.4-5.5 GHz with a maximum power gain of 13.2 *** excellent gain flatness is achieved with±0.45 dB gain fluctuations across 3-5 GHz and the minimum noise figure（NF） is 3.2 dB over 2.5-5 *** circuit also shows an excellent input matching characteristic with the measured S11 below-13 dB over 2.9-5.4 *** input-referred 1-dB compression point（IP1dB） is-11.7 dBm at 5 *** differential circuit consumes 9.6 mA current from a supply of 1.8 V.

关键词： LNA differential UWB flat gain feedback

A 3-5 GHz BPSK transmitter for IR-UWB in 0.18μm CMOS

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Journal of Semiconductors 2010年第9期31卷 88-93页

作者：付德龙黄鲁蔡力林福江 department of Electronic science and technology University of Science and Technology of China

This paper presents a transmitter IC with BPSK modulation for an ultra-wide band *** is based on up-conversion with a high linearity passive *** the traditional BPSK modulation scheme,the local oscillator （LO） is modulated by the baseband data instead of the *** chip is designed and fabricated by standard 0.18μm CMOS *** transmitter achieves a high data rate up to 400 *** amplitude of the pulse can be adjusted by the amplitude of the LO and the bias current of the driver *** maximum peak-to-peak amplitude of the pulse is 600 *** consumes only 20.3 mA current with a supply voltage of 1.8 V when transmitting a pulse at the maximum data *** energy efficiency is 91.4 pJ/*** die area is 1.4×1.4 mm^2.

关键词： transmitter BPSK pulse generator passive mixer driver amplifier IR-UWB

Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

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Chinese Physics B 2008年第6期17卷 2292-2296页

作者：刘磁辉刘秉策付竹西 department of Physics University of Science and Technology of China department of Electron science and technology University of Science and Technology of China

ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.

关键词： MOCVD ZnO/Si heterostructure PL spectra deep-level emission

Exploring Nanoscale Perovskite Materials for Next‑Generation Photodetectors:A Comprehensive Review and Future Directions

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Nano-Micro Letters 2025年第2期17卷 46-108页

作者： Xin Li Sikandar Aftab Maria Mukhtar Fahmid Kabir Muhammad Farooq Khan Hosameldin Helmy Hegazy Erdi Akman State Key Laboratory of Pulsed Power Laser technology National University of Defense TechnologyHefei 230037AnhuiPeople’s Republic of China Anhui Laboratory of Advanced Laser technology Hefei 230037AnhuiPeople’s Republic of China Nanhu Laser Laboratory Changsha 410015HunanPeople’s Republic of China department of Semiconductor Systems Engineering and Clean Energy Sejong UniversitySeoul 05006Republic of Korea department of Artificial Intelligence and Robotics Sejong UniversitySeoul 05006Republic of Korea School of Engineering science Simon Fraser UniversityBurnabyBC V5A 1S6Canada department of Electrical Engineering Sejong UniversitySeoul 05006South Korea department of Physics Faculty of ScienceKing Khalid UniversityP.O.Box 9004AbhaSaudi Arabia Central Labs King Khalid UniversityAlQura’aP.O.Box 96061413 AbhaSaudi Arabia Scientific and Technological Research and Application Center Karamanoglu Mehmetbey University70100 KaramanTurkey

The rapid advancement of nanotechnology has sparked much interest in applying nanoscale perovskite materials for photodetection *** materials are promising candidates for next-generation photodetectors(PDs)due to their unique optoelectronic properties and flexible synthesis *** review explores the approaches used in the development and use of optoelectronic devices made of different nanoscale perovskite architectures,including quantum dots,nanosheets,nanorods,nanowires,and *** a thorough analysis of recent literature,the review also addresses common issues like the mechanisms underlying the degradation of perovskite PDs and offers perspectives on potential solutions to improve stability and scalability that impede widespread *** addition,it highlights that photodetection encompasses the detection of light fields in dimensions other than light intensity and suggests potential avenues for future research to overcome these obstacles and fully realize the potential of nanoscale perovskite materials in state-of-the-art photodetection *** review provides a comprehensive overview of nanoscale perovskite PDs and guides future research efforts towards improved performance and wider applicability,making it a valuable resource for researchers.

关键词： Nanoscale perovskites Photodetectors Nanosheets Nanorods Nanowires Quantum dots Nanocrystals